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1. 发明公开

EP2677534A1 COMPOSITE SUBSTRATE WITH PROTECTION FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于制造半导体器件保护膜的方法复合基材
公开(公告)号：EP2677534A1
公开(公告)日：2013-12-25
申请号：EP12746625.8
申请日：2012-02-13
申请人： Sumitomo Electric Industries, Ltd.
发明人： SATOH, Issei , YOSHIDA, Hiroaki , YAMAMOTO, Yoshiyuki , HACHIGO, Akihiro , MATSUBARA, Hideki
IPC分类号： H01L21/20
CPC分类号： H01L29/2003 , H01L21/02104 , H01L21/76254
摘要： A protective-film-attached composite substrate (2Q) includes a support substrate (10), an oxide film (20) disposed on the support substrate (10), a semiconductor layer (30a) disposed on the oxide film (20), and a protective film (40) protecting the oxide film (20) by covering a portion (20s, 20t) that is a part of the oxide film (20) and covered with none of the support substrate (10) and the semiconductor layer (30a). A method of manufacturing a semiconductor device includes the steps of: preparing the protective-film-attached composite substrate (2Q); and epitaxially growing, on the semiconductor layer (30a) of the protective-film-attached composite substrate (2Q), at least one functional semiconductor layer causing an essential function of a semiconductor device to be performed. Thus, there are provided a protective-film-attached composite substrate having a large effective region where a high-quality functional semiconductor layer can be epitaxially grown, and a method of manufacturing a semiconductor device in which the protective-film-attached composite substrate is used.
摘要翻译：的保护膜相连的复合基板（2Q）包括支撑基板（10），以氧化物计的电影（20），其设置在设置于成膜氧化物（20），所述支撑基片（10），半导体层（30A），和通过覆盖的部分保护的氧化物膜 - （20）的保护膜（40）（20S，20T）确实是氧化物薄膜 - （20）的一部分，并且覆盖有没有支持衬底（10）和所述半导体层（30A ）。一种制造半导体器件的方法包括以下步骤：制备保护膜相连的复合基板（2Q）; 和外延生长，保护膜相连的复合基板的半导体层（30A）（2Q）上，至少一个功能性半导体层产生原因的半导体装置的基本功能将被执行。因此，存在提供一种具有大的有效区域，其中高品质的功能的半导体层可以外延生长在保护膜相连的复合基板，以及制造在保护膜相连的复合衬底是半导体器件的方法使用。

2. 发明公开

EP2390386A1 METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR CRYSTAL, NITRIDE SEMICONDUCTOR CRYSTAL, AND APPARATUS FOR PRODUCING NITRIDE SEMICONDUCTOR CRYSTAL 有权
标题翻译： VERFAHREN UND VORRICHTUNG ZUR HERSTELLUNG EINES NITRIDHALBLEITERKRISTALLS
公开(公告)号：EP2390386A1
公开(公告)日：2011-11-30
申请号：EP10731243.1
申请日：2010-01-13
申请人： Sumitomo Electric Industries, Ltd.
发明人： SATOH, Issei , MIYANAGA, Michimasa , YAMAMOTO, Yoshiyuki
IPC分类号： C30B29/38 , C30B23/00
CPC分类号： C30B23/00 , C30B29/403 , C30B29/406
摘要： Nitride semiconductor crystal manufacturing method according to which the following steps are carried out. To begin with, a crucible (101) for interiorly carrying source material (17) is prepared. Within the crucible (101), heating of the source material (17) sublimes the source material, and by the condensing of source-material gases caused, nitride semiconductor crystal is grown. In the preparation step, a crucible (101) made from a metal whose melting point is higher than that of the source material (17) is prepared.
摘要翻译：根据该方法进行以下步骤的氮化物半导体晶体制造方法。首先，制备用于内装载源材料（17）的坩埚（101）。在坩埚（101）内，源材料（17）的加热使源材料升高，并且通过源材料气体的冷凝产生氮化物半导体晶体。在制备步骤中，制备由熔点高于源材料（17）的金属制成的坩埚（101）。

3. 发明公开

EP2322698A1 METHOD FOR MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE 审中-公开
标题翻译： VERFAHREN ZUR HERSTELLUNG EINES NITRIDSUBSTRATS UND NITRIDSUBSTRAT
公开(公告)号：EP2322698A1
公开(公告)日：2011-05-18
申请号：EP09809936.9
申请日：2009-08-26
申请人： Sumitomo Electric Industries, Ltd.
发明人： ARAKAWA, Satoshi , MIYANAGA, Michimasa , SAKURADA, Takashi , YAMAMOTO, Yoshiyuki , NAKAHATA, Hideaki
IPC分类号： C30B29/38 , B24B1/00 , C30B33/00 , H01L21/304
CPC分类号： H01L21/02021 , C30B25/00 , C30B29/403 , C30B29/406 , C30B33/00 , H01L21/02013 , H01L21/02389
摘要： A method of manufacturing a nitride substrate (10) includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate (10) including a front surface (11) is cut from the nitride crystal. In the step of cutting, the nitride substrate (10) is cut such that an off angle formed between an axis orthogonal to the front surface (11) and an m-axis or an a-axis is greater than zero. When the nitride crystal is grown in a c-axis direction, in the step of cutting, the nitride substrate (10) is cut from the nitride crystal along a flat plane which passes through a front surface and a rear surface of the nitride crystal and does not pass through a line segment connecting a center of a radius of curvature of the front surface with a center of a radius of curvature of the rear surface of the nitride crystal.
摘要翻译：制造氮化物衬底（10）的方法包括以下步骤。首先，生长氮化物晶体。然后，从氮化物晶体切割包括前表面（11）的氮化物衬底（10）。在切割步骤中，切割氮化物衬底（10），使得在与正面（11）正交的轴与m轴或a轴之间形成的偏角大于零。当氮化物晶体沿c轴方向生长时，在切割步骤中，沿着通过氮化物晶体的前表面和后表面的平面从氮化物晶体切割氮化物衬底（10），并且不穿过将前表面的曲率半径的中心与氮化物晶体的后表面的曲率半径的中心连接的线段。

4. 发明公开

EP2226413A1 PROCESS FOR PRODUCING DIAMOND SINGLE CRYSTAL WITH THIN FILM AND DIAMOND SINGLE CRYSTAL WITH THIN FILM 有权
标题翻译：用于生产单单只钻石晶体薄膜金刚石单晶与薄膜
公开(公告)号：EP2226413A1
公开(公告)日：2010-09-08
申请号：EP07860225.7
申请日：2007-12-26
申请人： Sumitomo Electric Industries, Ltd.
发明人： UEDA, Akihiko , MEGURO, Kiichi , YAMAMOTO, Yoshiyuki , NISHIBAYASHI, Yoshiki , IMAI, Takahiro
IPC分类号： C30B29/04
CPC分类号： C30B29/04 , C30B25/02 , C30B25/105 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/24355 , Y10T428/30
摘要： A method for growing a low-resistance phosphorus-doped epitaxial thin film having a specific resistance of 300 Ωcm or less at 300 K on a principal surface of a {111} monocrystal substrate under conditions in which the phosphorus atom/carbon atom ratio is 3% or higher, characterized in that the principal surface has an off-angle of 0.50° or greater. The diamond monocrystal having a low-resistance phosphorus-doped diamond epitaxial thin film according to the present invention is characterized in that the thin-film surface has an off-angle of 0.50° or greater with respect to the {111} plane, and the specific resistance of the low-resistance phosphorus-doped diamond epitaxial thin film is 300 Ωcm or less at 300 K.
摘要翻译：一种用于在其中磷原子/碳原子比为条件下的{111}单晶衬底的主面在300K生长具有300©厘米或更小的电阻率的低电阻掺磷外延薄膜方法 3％或更高，其特征在于，所做的主面具有在零时50°或更大的偏离角。具有低电阻掺磷金刚石外延薄膜雅丁到本发明的金刚石单晶中做了薄膜表面的特征在于具有计划偏角的0.50°或更大的相对于{111}，并且低电阻掺磷金刚石外延薄膜的比电阻为300厘米©或更小在300 K.

5. 发明公开

EP2065915A1 DIAMOND ELECTRON SOURCE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译： DIAMANTELEKTRONENQUELLE UND DEREN HERSTELLUNGSVERFAHREN
公开(公告)号：EP2065915A1
公开(公告)日：2009-06-03
申请号：EP07807459.8
申请日：2007-09-18
申请人： Sumitomo Electric Industries, Ltd.
发明人： UEDA, Akihiko , YAMAMOTO, Yoshiyuki , NISHIBAYASHI, Yoshiki , IMAI, Takahiro
IPC分类号： H01J9/02 , H01J1/304
CPC分类号： H01J1/3044 , H01J9/025 , H01J37/065 , H01J37/073 , H01J2201/30407 , H01J2201/30411 , H01J2201/30419 , H01J2201/30457 , H01J2237/06341 , H01J2237/26 , H01J2237/3137 , H01J2237/3146 , H01J2237/31749 , H01J2237/3175
摘要： A diamond electron source in which a single sharpened tip is formed at one end of a pillar-shaped diamond monocrystal of a size for which resist application is difficult in a microfabrication process, as an electron emission point used in an electron microscope or other electron beam device, and a method for manufacturing the diamond electron source.
One end of a pillar-shaped diamond monocrystal 10 is ground to form a smooth flat surface 11, and a ceramic layer 12 is formed on the smooth flat surface 11. A thin-film layer 14 having a prescribed shape is deposited on the ceramic layer 12 using a focused ion beam device, after which the ceramic layer 12 is patterned by etching using the thin-film layer 14 as a mask. A single sharpened tip is formed at one end of the pillar-shaped diamond monocrystal 10 by dry etching using the resultant ceramic mask.
摘要翻译：一种金刚石电子源，其中在微细加工过程中难以施加抗蚀剂尺寸的柱状金刚石单晶的一端形成单个锐化尖端作为电子显微镜或其他电子束中使用的电子发射点器件，以及金刚石电子源的制造方法。研磨柱状金刚石单晶10的一端，形成平坦的平坦面11，在平滑平坦面11上形成陶瓷层12.具有规定形状的薄膜层14沉积在陶瓷层上 12，使用聚焦离子束装置，之后通过使用薄膜层14作为掩模的蚀刻对陶瓷层12进行图案化。通过使用所得到的陶瓷掩模的干蚀刻，在柱状金刚石单晶10的一端形成单个尖锐的尖端。

6. 发明公开

EP1930932A1 ELECTRON EMISSION ELEMENT AND ELECTRON EMISSION ELEMENT FABRICATION METHOD 审中-公开
标题翻译：赫尔辛基电力公司的ELEKTRONENEMISSIONSELEMENTFÜREIN ELEKTRONENEMISSIONSELEMENT
公开(公告)号：EP1930932A1
公开(公告)日：2008-06-11
申请号：EP06798197.7
申请日：2006-09-21
申请人： Sumitomo Electric Industries, Ltd.
发明人： YAMAMOTO, Yoshiyuki , TATSUMI, Natsuo , NISHIBAYASHI, Yoshiki , IMAI, Takahiro
IPC分类号： H01J1/304 , H01J9/02
CPC分类号： H01J1/3044 , H01J9/025
摘要： An electron emitting device 2 comprises an electron emitting portion 6 made of diamond. At an electron emission current value of 10 µA or more, a deviation of the electron emission current value over one hour is within ±20% in the electron emitting device 2. The number of occurrence of step-like noise changing the electron emission current value stepwise is once or less per 10 minutes.
摘要翻译：电子发射器件2包括由金刚石制成的电子发射部分6。在电子发射电流值为10μA以上的情况下，电子发射器件2中电子发射电流值超过1小时的偏差在±20％以内。电子发射电流值变化的阶梯状噪声的发生次数每10分钟一次或一次。

7. 发明公开

EP2551892A1 METHOD FOR PRODUCING GaN FILM 有权
标题翻译： VERFAHREN ZUR HERSTELLUNG EINES GAN-FILMS
公开(公告)号：EP2551892A1
公开(公告)日：2013-01-30
申请号：EP11841250.1
申请日：2011-11-10
申请人： Sumitomo Electric Industries, Ltd.
发明人： SATOH, Issei , SEKI, Yuki , UEMATSU, Koji , YAMAMOTO, Yoshiyuki , MATSUBARA, Hideki , FUJIWARA, Shinsuke , YOSHIMURA, Masashi
IPC分类号： H01L21/02 , H01L21/20 , H01L21/205
CPC分类号： H01L33/007 , H01L21/76256 , H01L33/0079
摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate (10), the composite substrate including a support substrate (11) in which a coefficient of thermal expansion in a main surface (11m) is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film (13) arranged on a side of the main surface (11m) of the support substrate (11), the single crystal film (13) having threefold symmetry with respect to an axis perpendicular to a main surface (13m) of the single crystal film (13), and forming a GaN-based film (20) on the main surface (13m) of the single crystal film (13) in the composite substrate (10). Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.
摘要翻译：本发明的GaN系膜的制造方法具有以下步骤：制备复合基板（10），所述复合基板包括主表面（11m）的热膨胀系数大于0.8的支撑基板（11）时间小于GaN晶体沿轴向的热膨胀系数和布置在支撑基板（11）的主表面（11m）侧的单晶膜（13）的1.2倍以下，所述单晶膜（13）相对于垂直于所述单晶膜（13）的主表面（13m）的轴线具有三重对称性，并且在所述主晶面（13m）上形成GaN基膜（20）复合衬底（10）中的单晶膜（13）。因此，提供了一种制造能够制造具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

8. 发明公开

EP2383373A1 APPARATUS FOR PRODUCING NITRIDE SEMICONDUCTOR CRYSTAL, METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR CRYSTAL, AND NITRIDE SEMICONDUCTOR CRYSTAL 审中-公开
标题翻译： DEVICE用于制造氮化物半导体，用于生产氮化物半导体与氮化物半导体
公开(公告)号：EP2383373A1
公开(公告)日：2011-11-02
申请号：EP10733470.8
申请日：2010-01-20
申请人： Sumitomo Electric Industries, Ltd.
发明人： SATOH, Issei , MIYANAGA, Michimasa , YAMAMOTO, Yoshiyuki , NAKAHATA, Hideaki
IPC分类号： C30B29/38 , C30B23/06
CPC分类号： C30B23/066 , C30B29/403
摘要： Affords nitride semiconductor crystal manufacturing apparatuses that are durable and that are for manufacturing nitride semiconductor crystal in which the immixing of impurities from outside the crucible is kept under control, and makes methods for manufacturing such nitride semiconductor crystal, and the nitride semiconductor crystal itself, available.
A nitride semiconductor crystal manufacturing apparatus (100) is furnished with a crucible (101), a heating unit (125), and a covering component (110). The crucible (101) is where, interiorly, source material (17) is disposed. The heating unit (125) is disposed about the outer periphery of the crucible (101), where it heats the crucible (101) interior. The covering component (110) is arranged in between the crucible (101) and the heating unit (125). The covering component (110) includes a first layer (111) formed along the side opposing the crucible (101), and made of a metal whose melting point is higher than that of the source material (17), and a second layer (112) formed along the outer periphery of the first layer (111), and made of a carbide of the metal that constitutes the first layer (111).
摘要翻译：得到氮化物半导体晶体制造装置那样耐用，并是用于制造氮化物半导体晶体，其中来自该坩埚外部的杂质的混入在控制下保持，并且使得用于制造搜索氮化物半导体晶体的方法，和氮化物半导体晶体本身，可用，一种氮化物半导体晶体制造装置（100）配有一个坩埚（101），一个加热单元（125），和覆盖部件（110）。所述坩埚（101）是其中，在内部，源材料（17）布置。所述加热单元（125）被设置在所述坩埚（101），在那里它加热坩埚（101）内部的外周。所述覆盖部件（110）被布置在所述坩埚（101）和加热单元（125）之间。所述覆盖部件（110）包括沿所述侧相对的坩埚（101）形成，并且由金属的熔点比所述源材料（17），以及第二层的更高的第一层（111）（112 沿着第一层（111）的外周形成，并且由金属制成的碳化物的）那样构成所述第一层（111）。

9. 发明公开

EP2309040A1 PROCESS FOR PRODUCTION OF A I X GA (1-X )N SINGLE CRYSTAL,A I X GA(1-X) N SINGLE CRYSTAL AND OPTICAL LENSESS 审中-公开
标题翻译： VERFAHREN ZUR HERSTELLUNG VON AIXGA（1-X）N-EINKRISTALL，AIXGA（1-X）N-EINKRISTALL UND OPTISCHE LINSEN
公开(公告)号：EP2309040A1
公开(公告)日：2011-04-13
申请号：EP09773381.0
申请日：2009-06-25
申请人： Sumitomo Electric Industries, Ltd.
发明人： ARAKAWA, Satoshi , SAKURADA, Takashi , YAMAMOTO, Yoshiyuki , SATOH, Issei , TANIZAKI, Keisuke , NAKAHATA, Hideaki , MIZUHARA, Naho , MIYANAGA, Michimasa
IPC分类号： C30B29/38 , C30B23/06 , G02B1/02 , G02B3/00
CPC分类号： G02B1/02 , C30B23/025 , C30B29/403 , C30B29/406 , G02B3/00 , G02B13/143 , Y10T428/21 , Y10T428/24355
摘要： A method of producing an Al x Ga (1-x) N (0 x Ga (1-x) N single crystal (10) by sublimation. The method includes the steps of preparing an underlying substrate, preparing a raw material of high purity, and growing an Al x Ga (1-x) N single crystal (10) on the underlying substrate by sublimating the raw material. At the Al x Ga (1-x) N single crystal (10), the refractive index with respect to light at a wavelength greater than or equal to 250 nm and less than or equal to 300 nm is greater than or equal to 2.4, and the refractive index with respect to light at a wavelength greater than 300 nm and less than 350 nm is greater than or equal to 2.3, measured at 300K.
摘要翻译：制造本发明的Al x Ga（1-x）N（0

10. 发明公开

EP2034504A1 DIAMOND ELECTRON RADIATION CATHODE, ELECTRON SOURCE, ELECTRON MICROSCOPE, AND ELECTRON BEAM EXPOSER 审中-公开
标题翻译： UNG UNG EN EN GS UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG UNG
公开(公告)号：EP2034504A1
公开(公告)日：2009-03-11
申请号：EP07767687.2
申请日：2007-06-27
申请人： Sumitomo Electric Industries, Ltd.
发明人： YAMAMOTO, Yoshiyuki , UEDA, Akihiko , NISHIBAYASHI, Yoshiki , IMAI, Takahiro
IPC分类号： H01J1/304 , H01J37/073 , H01L21/027
CPC分类号： H01J1/304 , B82Y10/00 , B82Y40/00 , H01J37/073 , H01J37/3174 , H01J2201/30457 , H01J2237/06341 , H01J2237/26
摘要： An object is to provide an electron emitting cathode achieving high luminance, low energy dispersion, and long life. It is therefore an object to provide a diamond electron emitting cathode graspable on a sufficiently stable basis, sharpened at the tip, and improved in electric field intensity. A diamond electron emitting cathode 110 according to the present invention is partitioned into at least three regions, i.e., a front end region 203 intended for electron emission at a tip of columnar shape, a rear end region 201 intended for grasping opposite in the longitudinal direction, and a thinned intermediate region 202, a cross-sectional area of the rear end region is not less than 0.2 mm 2 , the tip of the front end region is sharpened, and a maximum cross-sectional area of the thinned intermediate region is not more than 0.1 mm 2 .
摘要翻译：目的是提供一种实现高亮度，低能量分散和长寿命的电子发射阴极。因此，本发明的目的是提供一种能够在足够稳定的基础上掌握的金刚石电子发射阴极，其尖端尖锐化，并提高了电场强度。根据本发明的金刚石电子发射阴极110被划分成至少三个区域，即用于在柱形形状的顶端处用于电子发射的前端区域203，用于在纵向方向上相对握持的后端区域201 ，以及减薄的中间区域202，后端区域的截面积不小于0.2mm 2，前端区域的尖端被削尖，并且变薄的中间区域的最大横截面积不是大于0.1mm 2。

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