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1. 发明公开

EP3213842A1 COMPOSITE DIAMOND BODY AND COMPOSITE DIAMOND TOOL 审中-公开
标题翻译：复合金刚石和复合金刚石工具
公开(公告)号：EP3213842A1
公开(公告)日：2017-09-06
申请号：EP15855222.4
申请日：2015-10-29
申请人： Sumitomo Electric Industries, Ltd. , Sumitomo Electric Hardmetal Corp.
发明人： NISHIBAYASHI, Yoshiki , UEDA, Akihiko , KOBAYASHI, Yutaka
IPC分类号： B23B27/20 , B23B27/14 , C23C14/06 , C23C14/14 , C23C16/06 , C23C16/27 , C23C16/32 , C30B29/04
CPC分类号： B23B27/20 , B23B27/148 , B23B2222/68 , B23B2222/72 , B23B2222/84 , B23B2226/31 , B23B2226/315 , B23B2228/04 , B23B2228/36 , B23B2240/08 , C23C14/0617 , C23C14/0635 , C23C14/0641 , C23C14/18 , C23C14/185 , C23C14/352 , C23C14/5806 , C23C16/06 , C23C16/27 , C30B25/00 , C30B29/04 , C30B31/22
摘要： A composite diamond body (10) includes a diamond base material (11) and a stable layer (12) disposed on the diamond base material (11). The stable layer (12) may have a thickness of 0.001 µm or more and less than 10 µm, and may include a plurality of layers. A composite diamond tool (1) includes the composite diamond body (10). There are thus provided highly wear-resistant composite diamond body and composite diamond tool that are even applicable to mirror-finish planarization of a workpiece which reacts with diamond to cause the diamond to wear.
摘要翻译：复合金刚石体（10）包括金刚石基材（11）和设置在金刚石基材（11）上的稳定层（12）。稳定层（12）可以具有0.001μm以上且小于10μm的厚度，并且可以包括多个层。复合金刚石工具（1）包括复合金刚石体（10）。因此提供了高度耐磨的复合金刚石体和复合金刚石工具，其甚至适用于工件的镜面抛光平面化，该工件与钻石反应以引起钻石磨损。

2. 发明公开

EP2108714A1 MICROWAVE PLASMA CVD SYSTEM 有权
标题翻译： MIKROWELLEN - 等离子体CVD-SYSTEM
公开(公告)号：EP2108714A1
公开(公告)日：2009-10-14
申请号：EP07707612.3
申请日：2007-01-29
申请人： Sumitomo Electric Industries, Ltd.
发明人： UEDA, Akihiko , MEGURO, Kiichi , YAMAMOTO, Yoshiyuki , NISHIBAYASHI, Yoshiki , IMAI, Takahiro
IPC分类号： C23C16/511 , C30B29/04 , H01L21/205
CPC分类号： C30B25/105 , C23C16/24 , C23C16/511 , C30B29/04 , H01J37/32192 , H01J37/32238
摘要： The present invention provides a microwave plasma CVD device that can satisfactorily perform plasma position control under a condition capable of fabricating a large-area high-quality diamond thin film or the like. A microwave plasma CVD device includes: a vacuum chamber 1 having, in the center of its upper portion, an open portion 2 for introducing microwaves 20; a base material support table 11 for supporting a base material inside the vacuum chamber; a waveguide for guiding the microwaves to the open portion; a dielectric window 22 for introducing the microwaves to the inside of the vacuum chamber; and an antenna portion 25 for introducing the microwaves to the vacuum chamber, the antenna portion being configured by a round rod portion 23 that is positioned in the center of the waveguide, the open portion and the dielectric window and an electrode portion 24 that holds the dielectric window between the electrode portion and the upper portion of the vacuum chamber for vacuum retention, wherein an end surface of the electrode portion 24 is formed wider than the dielectric window such that the dielectric window is hidden, and a concave portion of a predetermined size is formed in the surface of the electrode portion 24 that faces the center of the vacuum chamber.
摘要翻译：本发明提供一种能够在能够制造大面积高品质金刚石薄膜等的条件下令人满意地进行等离子体位置控制的微波等离子体CVD装置。微波等离子体CVD装置包括：真空室1，其上部中心具有用于引入微波20的开口部分2; 用于在真空室内支撑基材的基材支撑台11; 用于将微波引导到开口部分的波导; 用于将微波引导到真空室的内部的电介质窗口22; 以及用于将微波引导到真空室的天线部分25，天线部分由位于波导中心的圆棒部分23，开口部分和电介质窗口以及保持所述电极部与所述真空室的上部之间的电介质窗用于真空保持，其中，所述电极部24的端面形成为比所述电介质窗宽，使得所述电介质窗被隐藏，并且具有预定尺寸的凹部形成在电极部分24的面对真空室的中心的表面上。

3. 发明公开

EP4190469A1 CUBIC BORON NITRIDE SINTERED COMPACT, AND CUTTING TOOL CONTAINING SAME 审中-公开
公开(公告)号：EP4190469A1
公开(公告)日：2023-06-07
申请号：EP21850669.9
申请日：2021-07-30
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD. , Sumitomo Electric Hardmetal Corp.
发明人： WATANABE, Yuichiro , OKAMURA, Katsumi , ISHII, Akito , ASAKAWA, Yoshiki , UEDA, Akihiko , KUKINO, Satoru , HAMA, Hisaya
IPC分类号： B23B27/14 , B23B27/20 , C22C29/16 , C22C1/05
摘要： The cubic boron nitride sintered material is a cubic boron nitride sintered material comprising: cubic boron nitride particles in an amount of 70 vol% or more and less than 100 vol%, and a bonding material, wherein the bonding material includes an aluminum compound, and includes cobalt as a constituent element; the cubic boron nitride sintered material has a first region in which a space between adjacent cubic boron nitride particles is 0.1 nm or more and 10 nm or less; and when the first region is analyzed by using an energy dispersive X-ray analyzer equipped with a transmission electron microscope, the atom% of aluminum in the first region is 0.1 or more.

4. 发明公开

EP4190468A1 CUBIC BORON NITRIDE SINTERED BODY AND CUTTING TOOL INCLUDING SAME 审中-公开
公开(公告)号：EP4190468A1
公开(公告)日：2023-06-07
申请号：EP21849358.3
申请日：2021-07-30
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD. , Sumitomo Electric Hardmetal Corp.
发明人： WATANABE, Yuichiro , OKAMURA, Katsumi , ISHII, Akito , ASAKAWA, Yoshiki , UEDA, Akihiko , KUKINO, Satoru , HAMA, Hisaya
IPC分类号： B23B27/14 , C22C29/16 , C22C1/05
摘要： A cubic boron nitride sintered material comprises cubic boron nitride particles in an amount of 70 vol% or more and less than 100 vol%, and a bonding material, wherein the bonding material comprises, as constituent elements, at least one first metallic element selected from the group consisting of titanium, zirconium, vanadium, niobium, hafnium, tantalum, chromium, rhenium, molybdenum, and tungsten; cobalt; and aluminum; the cubic boron nitride sintered material has a first interface region that is a region sandwiched between an interface between the cubic boron nitride particles and the bonding material, and a first virtual line passing through a point 10 nm apart from the interface to the bonding material side; and when an element that is present at the highest concentration among the first metallic elements in the first interface region is defined as a first element, an atomic concentration of the first element in the first interface region is higher than an atomic concentration of the first element in the bonding material excluding the first interface region.

5. 发明授权

EP2868780B1 DIAMOND SINGLE CRYSTAL AND PRODUCTION METHOD THEREOF, AND SINGLE CRYSTAL DIAMOND TOOL 有权
公开(公告)号：EP2868780B1
公开(公告)日：2020-11-04
申请号：EP13809060.0
申请日：2013-06-27
申请人： Sumitomo Electric Industries, Ltd.
发明人： UEDA, Akihiko , NISHIBAYASHI, Yoshiki , SUMIYA, Hitoshi
IPC分类号： C30B29/04 , B23B27/14 , C30B25/20 , C30B30/00 , C30B25/18

6. 发明公开

EP3214208A1 SINGLE-CRYSTAL DIAMOND MATERIAL, AND TOOL, RADIATION TEMPERATURE MONITOR, AND INFRARED OPTICAL COMPONENT INCLUDING SAID DIAMOND MATERIAL 有权
标题翻译：单晶金刚石材料和工具，辐射温度监测器以及包括所述金刚石材料的红外光学部件
公开(公告)号：EP3214208A1
公开(公告)日：2017-09-06
申请号：EP15855597.9
申请日：2015-10-29
申请人： Sumitomo Electric Industries, Ltd. , Sumitomo Electric Hardmetal Corp.
发明人： NISHIBAYASHI, Yoshiki , UEDA, Akihiko , KOBAYASHI, Yutaka
IPC分类号： C30B29/04 , C23C16/27
CPC分类号： C30B29/04 , C01B32/26 , C01P2006/40 , C01P2006/60 , C01P2006/80 , C23C16/27 , C30B25/02 , C30B25/205 , G01K11/18 , G02B5/208
摘要： A single-crystal diamond material has a transmittance of light with a wavelength of greater than or equal to 410 nm and less than or equal to 750 nm of less than or equal to 15% for any wavelength, and is at least either of an electrical insulator according to optical evaluation and an electrical insulator according to electrical evaluation. A criterion of the optical evaluation can be a transmittance of light with a wavelength of 10.6 µm of greater than or equal to 1%. A criterion of the electrical evaluation can be an average resistivity of greater than or equal to 1 × 10 6 Ωcm. Accordingly, a single-crystal diamond material having a low transmittance of light in the entire region of the visible light region and exhibiting a black color is provided.
摘要翻译：对于任何波长，单晶金刚石材料对波长大于或等于410nm且小于或等于750nm的光的透射率小于或等于15％，并且至少是电根据光学评估的绝缘体和根据电评估的电绝缘体。光学评估的标准可以是波长10.6μm的光的透射率大于或等于1％。电评估的标准可以是大于或等于1×10 6Ωcm的平均电阻率。因此，提供了在可见光区域的整个区域中具有低透射率并呈现黑色的单晶金刚石材料。

7. 发明授权

EP2226413B1 METHOD FOR MANUFACTURING DIAMOND MONOCRYSTAL HAVING A THIN FILM, AND DIAMOND MONOCRYSTAL HAVING A THIN FILM. 有权
标题翻译：用于生产单单只钻石晶体薄膜金刚石单晶与薄膜
公开(公告)号：EP2226413B1
公开(公告)日：2016-10-12
申请号：EP07860225.7
申请日：2007-12-26
申请人： Sumitomo Electric Industries, Ltd.
发明人： UEDA, Akihiko , MEGURO, Kiichi , YAMAMOTO, Yoshiyuki , NISHIBAYASHI, Yoshiki , IMAI, Takahiro
IPC分类号： C30B25/02 , C30B29/04 , C30B25/10 , H01L21/02
CPC分类号： C30B29/04 , C30B25/02 , C30B25/105 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/24355 , Y10T428/30

8. 发明公开

EP2985368A1 SINGLE CRYSTAL DIAMOND AND DIAMOND TOOL 有权
标题翻译： EINRISTALLINER DIAMANT UND DIAMANTWERKZEUG
公开(公告)号：EP2985368A1
公开(公告)日：2016-02-17
申请号：EP14783086.3
申请日：2014-04-02
申请人： Sumitomo Electric Industries, Ltd. , Sumitomo Electric Hardmetal Corp.
发明人： NISHIBAYASHI, Yoshiki , UEDA, Akihiko , SUMIYA, Hitoshi , KOBAYASHI, Yutaka , SEKI, Yuichiro , TAKAHASHI, Toshiya
IPC分类号： C30B29/04 , C01B31/06
CPC分类号： C30B29/04 , C30B25/00 , C30B25/105
摘要： A single crystal diamond (10) is provided as a single crystal diamond into which a defect portion (11) is introduced. The defect portion (11) can be detected by a phase difference occurring when the single crystal diamond (10) is irradiated with circularly polarized light. In the single crystal diamond (10), a maximum value of average values of the phase differences measured within a measurement region (M) formed in a shape of a square having a side length of 1 mm is 30 nm or more.
摘要翻译：提供单晶金刚石（10）作为引入缺陷部分（11）的单晶金刚石。可以通过用圆偏振光照射单晶金刚石（10）时发生的相位差来检测缺陷部分（11）。在单晶金刚石（10）中，在形成为具有1mm长边的正方形的测量区域（M）内测得的相位差的平均值的最大值为30nm以上。

9. 发明授权

EP2108714B1 MICROWAVE PLASMA CVD SYSTEM 有权
标题翻译：微波等离子体CVD系统
公开(公告)号：EP2108714B1
公开(公告)日：2014-03-12
申请号：EP07707612.3
申请日：2007-01-29
申请人： Sumitomo Electric Industries, Ltd.
发明人： UEDA, Akihiko , MEGURO, Kiichi , YAMAMOTO, Yoshiyuki , NISHIBAYASHI, Yoshiki , IMAI, Takahiro
IPC分类号： C23C16/511 , C30B29/04 , H01L21/205 , H01J37/32
CPC分类号： C30B25/105 , C23C16/24 , C23C16/511 , C30B29/04 , H01J37/32192 , H01J37/32238

10. 发明公开

EP4190470A1 CUBIC BORON NITRIDE SINTERED BODY AND CUTTING TOOL INCLUDING SAME 审中-公开
公开(公告)号：EP4190470A1
公开(公告)日：2023-06-07
申请号：EP21850760.6
申请日：2021-07-30
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD. , Sumitomo Electric Hardmetal Corp.
发明人： ISHII, Akito , WATANABE, Yuichiro , OKAMURA, Katsumi , ASAKAWA, Yoshiki , UEDA, Akihiko , KUKINO, Satoru , HAMA, Hisaya
IPC分类号： B23B27/14 , B23B27/20 , C22C29/08 , C22C29/16 , C22C1/05 , C04B35/5831 , C04B35/5835
摘要： A cubic boron nitride sintered material includes 70 vol% or more and less than 100 vol% of cubic boron nitride and a binder. The binder includes a first material and a second material. The first material is one or two or more first chemical species each including at least one first metallic element selected from the group consisting of tungsten, cobalt, and aluminum. Each of the first chemical species is a metal, an alloy, an intermetallic compound, a compound, or a solid solution. The second material is one or two or more second chemical species each including at least one second metallic element selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, tantalum, and chromium. Each of the second chemical species is a solid solution derived from at least one selected from the group consisting of nitride, carbide, and carbonitride. In each of the second chemical species, 0.1 atom% to 10 atom% of aluminum is dissolved in a solid state, and the second material is grains having an average grain size of 1 µm or less.

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