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1. 发明公开

EP4364849A2 NANOSTRUCTURED BATTERY ACTIVE MATERIALS AND METHODS OF PRODUCING SAME 审中-公开
公开(公告)号：EP4364849A2
公开(公告)日：2024-05-08
申请号：EP24163995.4
申请日：2012-07-24
申请人： OneD Material, Inc.
发明人： CAO, Wanqing , ROBBINS, Virginia , ZHU, Yimin
IPC分类号： B01J37/02
CPC分类号： H01M4/134 , C01B33/02 , C01B33/029 , C01P2004/1620130101 , C01P2004/6420130101 , B01J21/18 , B01J23/72 , B01J37/0211 , C30B11/12 , C30B29/60 , C01B33/021 , C30B29/06 , Y02E60/10
摘要： Methods for producing nanostructures from copper-based catalysts on porous substrates, particularly silicon nanowires on carbon-based substrates for use as battery active materials, are provided. Related compositions are also described. In addition, novel methods for production of copper-based catalyst particles are provided. Methods for producing nanostructures from catalyst particles that comprise a gold shell and a core that does not include gold are also provided.

2. 发明公开

EP3164897A1 NANOSCALE DEVICE COMPRISING AN ELONGATED CRYSTALLINE NANOSTRUCTURE 审中-实审
标题翻译：纳米级装置包含一个延长的结晶纳米结构
公开(公告)号：EP3164897A1
公开(公告)日：2017-05-10
申请号：EP15735666.8
申请日：2015-07-02
申请人： University of Copenhagen
发明人： KROGSTRUP, Peter , JESPERSEN, Thomas Sand , MARCUS, Charles M. , NYGÅRD, Jesper
IPC分类号： H01L39/22 , H01L39/24 , H01L39/06 , H01L29/06 , H01L29/66 , B82Y10/00 , B82Y40/00 , H01L29/41 , H01L29/43 , H01L29/45
CPC分类号： H01L39/02 , B82Y10/00 , B82Y40/00 , C23C14/28 , C30B11/12 , C30B23/025 , C30B23/066 , C30B29/62 , H01L29/0673 , H01L29/413 , H01L29/437 , H01L29/66469 , H01L39/025 , H01L39/125 , H01L39/221 , H01L39/223 , H01L39/228 , H01L39/2432 , H01L39/2493 , Y10S977/762 , Y10S977/81 , Y10S977/891 , Y10S977/938 , Y10S977/943
摘要： The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.
摘要翻译：本公开涉及纳米级装置及其制造方法，所述纳米级装置包括细长晶体纳米结构，例如纳米线晶体，纳米晶须晶体或纳米棒晶体。一个实施方案涉及纳米尺度装置，其包含细长晶体半导体纳米结构，例如优选由砷化铟制成的纳米线（晶体）或纳米晶须（晶体）或纳米棒（晶体），其具有多个基本平面的侧面，晶体结构覆盖一个或多个所述侧面的至少一部分的超导材料（优选铝）的第一小面层，以及覆盖第一小面层的至少一部分的超导材料（优选钒）的第二小面层，所述第一小面层所述第二小面层的超导材料不同于所述第一小面层的超导材料，其中所述半导体纳米结构的晶体结构与所述两个晶体结构之间的界面上的所述第一小面层的晶体结构外延匹配。

3. 发明授权

EP1525339B1 NANOSTRUCTURES AND METHODS FOR MANUFACTURING THE SAME 有权
标题翻译：性纳米结构及其制备方法
公开(公告)号：EP1525339B1
公开(公告)日：2016-03-16
申请号：EP03738327.0
申请日：2003-07-08
申请人： QuNano AB
发明人： SAMUELSON, Lars, Ivar , OHLSSON, Jonas, Björn
IPC分类号： C30B11/12 , C30B29/40 , C30B29/60
CPC分类号： H01L31/035227 , B82Y10/00 , C30B11/00 , C30B11/12 , C30B25/00 , C30B25/02 , C30B25/14 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , C30B29/605 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/20 , H01L29/66318 , H01L29/7371 , H01L29/882 , H01L31/022466 , H01L31/048 , H01L31/068 , H01L33/04 , Y02E10/547 , Y10S977/762 , Y10S977/763
摘要： A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps. Thus a resonant tunneling diode comprises a nanowhisker having a seed particle melt at one end, and a column of a constant diameter with a nanometer dimension, such as to exhibit quantum confinement effects, the column comprising first and second semiconductor portions comprising respectively an emitter and a collector, and, disposed between the first and second semiconductor portions, third and fourth portions of material having a different band gap from that of the first and second semiconductor portions, and a fifth central portion of a semiconductor material having a different band gap from that of the third and fourth portions, disposed between the third and fourth portions and forming a quantum weil. The RTD is made by a method including depositing a seed particle on a substrate, and exposing the seed particle to materials under controlled conditions of temperature and pressure such as to form a melt with the seed particle, so that the seed particle rises on top of a column whereby to form a nanowhisker, the column of the nanowhisker having a constant diameter of a nanometer dimension; during the growth of the column, selectively changing the compositions of said gases whereby to abruptly change the composition of the material of the column at regions along its length, whilst retaining epitaxial growth, wherein lattice mismatch between the materials of the portions is accommodated by radial outward bulging of the whisker at the boundaries.

5. 发明公开

EP2748107A1 VERFAHREN ZUR HERSTELLUNG UND AUSRICHTUNG VON NANOWIRES UND ANWENDUNGEN EINES SOLCHEN VERFAHRENS 有权转让
标题翻译：方法用于生产和对准纳米线，而该等程序中的应用
公开(公告)号：EP2748107A1
公开(公告)日：2014-07-02
申请号：EP12750327.4
申请日：2012-08-20
申请人： ETH Zürich
发明人： ALBUSCHIES Jörg
IPC分类号： B82Y10/00
CPC分类号： G01N27/04 , B81B7/0006 , B81B2201/0214 , B81C1/00087 , B82Y30/00 , B82Y40/00 , C30B11/12 , C30B29/06 , C30B29/60 , G01N33/483 , G01N33/48721
摘要： The invention relates, inter alia, to a method for producing a conductor structure, comprising at least one silicon nanowire (4) having a diameter of less than 50 nm, which nanowire is contacted via at least two points by electrodes (11, 13, 30), and wherein the at least one nanowire (4) and the electrodes (11, 13, 30) are arranged on one plane on a substrate (1, 5), which is characterized in that a) catalytically active metal nanoparticles having a diameter in the range of 0.5-50 nm are deposited on the surface (2) of an insulating substrate (1), b) the surface and the metal nanoparticles deposited thereon are exposed to a gas flow containing at least one gaseous silicon component at a temperature in the range of 300-1100 ºC and during a time period in the range of 10-200 minutes, wherein at least one nanowire (4) of a length in the range of 5-200 μm projecting from the substrate is formed, c) said at least one nanowire (4) projecting from the surface of the substrate (1) is deposited in one plane with one of the contact surfaces (6) corresponding to the surface (2) of the insulating substrate (1) by applying a secondary substrate (5), and d) either the at least one nanowire (4) deposited on the insulating substrate (1) is contacted at two different points by electrodes (11, 13, 30) or the at least one nanowire adhering to the secondary substrate (5) is contacted at two different points by electrodes (11, 13, 30).
摘要翻译：该方法包括在10-200分钟的时间段暴露绝缘基板（1）和金属纳米颗粒的表面（2）在绝缘基板的表面上，以气流含有的300-1100 [度] C的温度的气态硅成分。甲硅纳米线（4）与长度5-200微米从绝缘基板表面突出的在一个平面内通过接触辅基板（5）与绝缘基板的接触面（6）提供。上绝缘基板或纳米线秉承次衬底的纳米线在由电极的两个不同的点被接触。按电极，其具有经由两个点的小于50nm直径的硅纳米线。所述纳米线和电极被布置在一个平面上在基片上。在0.5-50纳米范围内具有直径催化活性的金属纳米颗粒被沉积在基板上的表面到绝缘的。含有金属纳米粒子的溶液wässrige做熊如胶体，具有直径在0.5-500纳米的范围内，被施加到光致抗蚀剂。用合适的溶剂中的漆：如丙酮被去除，当溶液蒸发。催化剂颗粒的金属纳米颗粒：如金纳米颗粒，其直径在1-20纳米范围内的硅树脂基的基片被形成在5-500纳米范围内具有厚度的单晶硅层。独立权利要求中包括了以下内容：对于干化学生产结晶基板的凹部（1）的方法; （2）用于制备传感器元件，用于测定分子特性的方法; 如使用所述传感器元件的DNA分子;和（3），用于测量长链分子的特性的方法。

6. 发明公开

EP2082419A4 SYSTEMS AND METHODS FOR NANOWIRE GROWTH 审中-公开
标题翻译： SYSTEME UND VERFAHREN ZUM NANODRAHT-WACHSTUM
公开(公告)号：EP2082419A4
公开(公告)日：2014-06-11
申请号：EP07839972
申请日：2007-11-06
IPC分类号： H01L21/20 , B82B1/00 , B82B3/00 , C30B11/12 , C30B29/06 , C30B29/60 , H01L21/02 , H01L29/06
CPC分类号： C30B11/12 , B82Y10/00 , C30B29/06 , C30B29/60 , H01L21/02425 , H01L21/02532 , H01L21/02573 , H01L21/02601 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02645 , H01L21/02653 , H01L29/0665 , H01L29/0669 , H01L29/0673 , Y10T428/2913

7. 发明公开

EP2736837A2 NANOSTRUCTURED BATTERY ACTIVE MATERIALS AND METHODS OF PRODUCING SAME 有权转让
标题翻译：活性物质用于生产纳米结构电池和方法
公开(公告)号：EP2736837A2
公开(公告)日：2014-06-04
申请号：EP12817748.2
申请日：2012-07-24
申请人： Oned Material LLC
发明人： CAO, Wanqing , ROBBINS, Virginia
IPC分类号： B82B3/00 , B82B1/00 , B01J23/72 , C01B31/02 , H01M4/04
CPC分类号： H01M4/366 , B01J21/18 , B01J23/72 , B01J37/0211 , C01B33/02 , C01B33/021 , C01B33/029 , C01P2004/16 , C01P2004/64 , C30B11/12 , C30B25/005 , C30B29/06 , C30B29/60 , H01M4/0428 , H01M4/0495 , H01M4/134 , H01M4/386 , H01M4/622
摘要： Methods for producing nanostructures from copper-based catalysts on porous substrates, particularly silicon nanowires on carbon-based substrates for use as battery active materials, are provided. Related compositions are also described. In addition, novel methods for production of copper-based catalyst particles are provided. Methods for producing nanostructures from catalyst particles that comprise a gold shell and a core that does not include gold are also provided.

8. 发明公开

EP2347994A1 Nanostructures formed of branched nanowhiskers and methods of producing the same 审中-公开
标题翻译： Nanostrukturen gebildet von verzweigten Nanowhisker und Verfahren zu ihrer Herstellung
公开(公告)号：EP2347994A1
公开(公告)日：2011-07-27
申请号：EP11162410.2
申请日：2004-11-18
申请人： QuNano AB
发明人： Samuelson, Lars , Deppert, Knut
IPC分类号： B82B1/00 , B82B3/00 , C30B11/12 , C30B29/44 , C30B29/40
CPC分类号： C30B29/62 , B01J21/185 , B01J37/0238 , B82Y20/00 , B82Y30/00 , C30B11/12 , C30B29/40 , C30B29/44 , C30B29/605 , H01L21/02392 , H01L21/02433 , H01L21/02543 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L31/035236 , H01L31/03529 , H01L31/101 , H01L33/18 , H01L33/20 , H01L33/24 , Y02E10/50 , Y10S438/96 , Y10S438/962 , Y10S977/754 , Y10S977/89 , Y10S977/891 , Y10S977/921 , Y10T428/25
摘要： The invention relates to a method of forming a nanostructure. A first one-dimensional nano-element is grown for a predetermined period of time. After completion of the predetermined period of time, a catalytic particle is provided on a periphery of the first one-dimensional nano-element. From a periphery of the first one-dimensional nano-element a second one-dimensional nano-element is grown, extending transversely to the first one-dimensional nano-element. The invention also relates to a nanostructure comprising a first one-dimensional nanoelement, a second one-dimensional nanoelement grown on and extending transversely from a periphery of the first one-dimensional nanoelement, and a third one-dimensional nanoelement grown on and extending transversely from a periphery of the second one-dimensional nanoelement.
摘要翻译：本发明涉及形成纳米结构的方法。第一个一维纳米元素生长一段预定的时间。在预定时间段完成后，在第一一维纳米元件的周围设置催化剂颗粒。从第一个一维纳米元素的周边生长第二个一维纳米元素，横向于第一个一维纳米元素延伸。本发明还涉及一种纳米结构，该纳米结构包括在第一个一维纳米元素的周围生长并横向延伸的第一个一维纳米元素，第二个一维纳米元素，以及第三个一维纳米元素，第二个一维纳米元素的外围。

9. 发明公开

EP1966847A2 METHODS FOR ORIENTED GROWTH OF NANOWIRES ON PATTERNED SUBSTRATES 有权转让
标题翻译：的方法，来EYED SUBSTRATES纳米线定向生长
公开(公告)号：EP1966847A2
公开(公告)日：2008-09-10
申请号：EP06851310.0
申请日：2006-12-20
申请人： Nanosys, Inc.
发明人： ROBBINS, Virginia
IPC分类号： H01M8/04 , H01M8/24
CPC分类号： C30B29/605 , B82Y30/00 , C30B11/12 , C30B29/06 , Y10T428/24917
摘要： Systems and methods for nanowire growth, doping and harvesting are provided, including methods for epitaxial oriented naπowire growth using a combination of silicon precursors, as well as use of patterned substrates to grow oriented nanowires. Improvements in nanowire quality are made through the use of sacrificial growth layers. Methods for transferring nanowires from one substrate to another substrate are also provided.

10. 发明公开

EP1769530A2 SYSTEMS AND METHODS FOR HARVESTING AND INTEGRATING NANOWIRES 审中-公开
标题翻译：系统和方法来获得和纳米线的整合
公开(公告)号：EP1769530A2
公开(公告)日：2007-04-04
申请号：EP05856676.1
申请日：2005-04-29
申请人： Nanosys, Inc.
发明人： ROMANO, Linda, T. , CHEN, Jian , DUAN, Xiangfeng , DUBROW, Robert, S. , EMPEDOCLES, Stephen, A. , GOLDMAN, Jay, L. , HAMILTON, James, M. , HEALD, David, L. , LEMMI, Francesco , NIU, Chunming , PAN, Yaoling , PONTIS, George , SAHI, Vijendra , SCHER, Erik, C. , STUMBO, David, P. , WHITEFORD, Jeffery, A.
IPC分类号： H01L21/20
CPC分类号： C30B29/605 , B82Y10/00 , C30B11/12 , H01L21/02439 , H01L21/02513 , H01L21/02521 , H01L21/02532 , H01L21/02603 , H01L21/02606 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L29/66469 , H01L29/775 , H01L29/78684 , H01L29/7869 , H01L29/78696 , H01L51/0048 , Y10S977/762 , Y10S977/938 , Y10T428/139 , Y10T428/2902 , Y10T428/2949
摘要： The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.

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