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1. 发明授权

EP2832900B1 LAMINATED SUBSTATE OF SILICON SINGLE CRYSTAL AND GROUP III NITRIDE SINGLE CRYSTAL WITH OFF ANGLE 有权
公开(公告)号：EP2832900B1
公开(公告)日：2019-08-07
申请号：EP12873342.5
申请日：2012-11-01
申请人： Kabushiki Kaisha Toyota Chuo Kenkyusho , Denso Corporation
发明人： NARITA, Tetsuo , ITO, Kenji , TOMITA, Kazuyoshi , OTAKE, Nobuyuki , HOSHI, Shinichi , MATSUI, Masaki
IPC分类号： H01L21/20 , C30B29/38 , C23C16/34 , C30B25/20 , H01L21/205 , H01L33/32 , C30B25/18 , C30B29/40 , H01L29/20 , H01L29/04 , H01L33/00
CPC分类号： H01L29/2003 , C30B25/08 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/02433 , H01L21/02488 , H01L21/0254 , H01L29/045 , H01L33/007
摘要： A step-flow growth of a group-III nitride single crystal on a silicon single crystal substrate is promoted. A layer of oxide oriented to a axis of silicon single crystal is formed on a surface of a silicon single crystal substrate, and group-III nitride single crystal is crystallized on a surface of the layer of oxide. Thereupon, a axis of the group-III nitride single crystal undergoing crystal growth is oriented to a c-axis of the oxide. When the silicon single crystal substrate is provided with a miscut angle, step-flow growth of the group-III nitride single crystal occurs. By deoxidizing a silicon oxide layer formed at an interface of the silicon single crystal and the oxide, orientation of the oxide is improved.

2. 发明公开

EP3358049A1 FOUNDATION SUBSTRATE FOR PRODUCING DIAMOND FILM AND METHOD FOR PRODUCING DIAMOND SUBSTRATE USING SAME 审中-公开
公开(公告)号：EP3358049A1
公开(公告)日：2018-08-08
申请号：EP18155185.4
申请日：2018-02-05
申请人： Shin-Etsu Chemical Co., Ltd. , National Institute of Advanced Industrial Science and Technology , National University Corporation Kanazawa University
发明人： Noguchi, Hitoshi , Makino, Toshiharu , Ogura, Masahiko , Kato, Hiromitsu , Kawashima, Hiroyuki , Yamasaki, Satoshi , Tokuda, Norio
IPC分类号： C30B25/10 , C23C16/27 , C30B25/18 , C30B29/04 , H01L21/00
CPC分类号： C30B25/20 , C23C16/0281 , C23C16/272 , C30B25/105 , C30B25/18 , C30B25/183 , C30B25/186 , C30B29/04 , H01L21/00 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02444 , H01L21/02491 , H01L21/02499 , H01L21/02502 , H01L21/02516 , H01L21/02527 , H01L21/0262 , H01L21/02634
摘要： It is an object to provide a method for producing a diamond substrate effective for reducing various defects including dislocation defects and a foundation substrate used for the same. This object is achieved by a foundation substrate for forming a diamond film by a chemical vapor deposition method, wherein an off angle is provided to the surface of the foundation substrate with respect to a predetermined crystal plane orientation.

3. 发明公开

EP3356582A1 EPITAXIAL GROWTH OF DEFECT-FREE, WAFER-SCALE SINGLE-LAYER GRAPHENE ON THIN FILMS OF COBALT 有权转让
公开(公告)号：EP3356582A1
公开(公告)日：2018-08-08
申请号：EP16784623.7
申请日：2016-09-28
申请人： SunEdison Semiconductor Limited , The Board of Trustees of the University of Illinois
发明人： BERRY, Vikas , BEHURA, Sanjay , NGUYEN, Phong , SEACRIST, Michael R.
IPC分类号： C30B25/18 , C30B29/02
CPC分类号： H01L21/02527 , C01B32/184 , C30B25/18 , C30B25/183 , C30B29/02 , H01L21/02378 , H01L21/02381 , H01L21/02389 , H01L21/02392 , H01L21/02395 , H01L21/0242 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/0262 , H01L21/02658 , H01L29/1606
摘要： A method for depositing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate is provided. Due to the strong adhesion of graphene and cobalt to a semiconductor substrate, the layer of graphene is epitaxially deposited.

4. 发明公开

EP3176293A4 TEMPLATE FOR EPITAXIAL GROWTH AND METHOD OF PREPARING SAME, AND NITRIDE SEMICONDUCTOR DEVICE 无效转让
公开(公告)号：EP3176293A4
公开(公告)日：2018-07-04
申请号：EP14884264
申请日：2014-08-29
申请人： SOKO KAGAKU CO LTD
发明人： PERNOT CYRIL , HIRANO AKIRA
IPC分类号： C30B29/38 , H01L21/20 , H01L21/205 , H01L33/32
CPC分类号： C30B25/183 , C30B29/38 , C30B29/406 , C30B31/08 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02614 , H01L21/0262 , H01L21/02658 , H01L21/20 , H01L21/205 , H01L33/007 , H01L33/06 , H01L33/12 , H01L33/145 , H01L33/32 , H01S5/0213 , H01S5/32341 , H01S2301/173 , H01S2304/04
摘要： The present invention provides a method for producing a template for epitaxial growth, the method including: a surface treatment step of dispersing Ga atoms on a surface of a sapphire substrate; and an AlN growth step of epitaxially growing an AlN layer on the sapphire substrate, wherein in a Ga concentration distribution in a depth direction perpendicular to the surface of the sapphire substrate in an internal region of the AlN layer excluding a near-surface region up to a depth of 100 nm from the surface of the AlN layer, which is obtained by secondary ion mass spectrometry, a position in the depth direction where the Ga concentration takes the maximum value is present in a near-interface region located between the interface of the sapphire substrate and a position at 400 nm spaced apart from the interface to the AlN layer side, and the maximum value of the Ga concentration is 3 × 10 17 atoms/cm 3 or more and 2 × 10 20 atoms/cm 3 or less.

5. 发明授权

EP3080834B1 STRESS MITIGATING AMORPHOUS SIO2 INTERLAYER 失效转让
公开(公告)号：EP3080834B1
公开(公告)日：2018-05-23
申请号：EP14864943.7
申请日：2014-10-27
申请人： Translucent, Inc.
发明人： DARGIS, Rytis , CLARK, Andrew , ARKUN, Erdem
IPC分类号： H01L21/20 , C30B25/18 , C30B25/22 , C30B29/16 , C30B29/40
CPC分类号： H01L21/02488 , C30B25/183 , C30B25/22 , C30B29/16 , C30B29/403 , H01L21/02381 , H01L21/02433 , H01L21/02483 , H01L21/02505 , H01L21/0254 , H01L33/007 , H01L33/12 , H01L33/32
摘要： A method of forming a REO dielectric layer and a layer of a-Si between a III-N layer and a silicon substrate. The method includes depositing single crystal REO on the substrate. The single crystal REO has a lattice constant adjacent the substrate matching the lattice constant of the substrate and a lattice constant matching a selected III-N material adjacent an upper surface. A uniform layer of a-Si is formed on the REO. A second layer of REO is deposited on the layer of a-Si with the temperature required for epitaxial growth crystallizing the layer of a-Si and the crystallized silicon being transformed to amorphous silicon after transferring the lattice constant of the selected III-N material of the first layer of REO to the second layer of REO, and a single crystal layer of the selected III-N material deposited on the second layer of REO.

6. 发明公开

EP3086378A4 COMPOSITE SUBSTRATE FOR LIGHT-EMITTING ELEMENT AND PRODUCTION METHOD THEREFOR 无效
标题翻译： VERBUNDSUBSTRATFÜRLICHTEMITTIERENDES ELEMENT UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP3086378A4
公开(公告)日：2017-08-16
申请号：EP14872045
申请日：2014-12-08
申请人： NGK INSULATORS LTD
发明人： WATANABE MORIMICHI , YOSHIKAWA JUN , NANATAKI TSUTOMU , IMAI KATSUHIRO , SUGIYAMA TOMOHIKO , YOSHINO TAKASHI , TAKEUCHI YUKIHISA , SATO KEI
IPC分类号： H01L33/32 , C30B29/38 , H01S5/343
CPC分类号： H01L33/16 , C30B9/10 , C30B19/02 , C30B25/18 , C30B25/183 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02554 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L33/0008 , H01L33/0025 , H01L33/0066 , H01L33/0075 , H01L33/06 , H01L33/32
摘要： Provided is a light emitting device composite substrate suitable for manufacturing large-area light emitting devices at low cost. The light emitting device composite substrate comprises a substrate composed of an oriented polycrystalline alumina sintered body, and a light emitting functional layer formed on the substrate and having two or more layers composed of semiconductor single crystal grains, wherein each of the two or more layers has a single crystal structure in a direction approximately normal to the substrate.
摘要翻译：提供一种适于以低成本制造大面积发光器件的发光器件复合衬底。发光器件复合基板包括由定向多晶氧化铝烧结体构成的基板和形成在基板上并具有由半导体单晶颗粒构成的两层或更多层的发光功能层，其中两层或更多层中的每一层具有在与衬底大致垂直的方向上的单晶结构。

7. 发明公开

EP3086378A1 COMPOSITE SUBSTRATE FOR LIGHT-EMITTING ELEMENT AND PRODUCTION METHOD THEREFOR 无效
标题翻译： VERBUNDSUBSTRATFÜRLICHTEMITTITELENDES ELEMENT UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP3086378A1
公开(公告)日：2016-10-26
申请号：EP14872045.1
申请日：2014-12-08
申请人： NGK Insulators, Ltd.
发明人： WATANABE Morimichi , YOSHIKAWA Jun , NANATAKI Tsutomu , IMAI Katsuhiro , SUGIYAMA Tomohiko , YOSHINO Takashi , TAKEUCHI Yukihisa , SATO Kei
IPC分类号： H01L33/32 , C30B29/38 , H01S5/343
CPC分类号： H01L33/16 , C30B9/10 , C30B19/02 , C30B25/18 , C30B25/183 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02554 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L33/0008 , H01L33/0025 , H01L33/0066 , H01L33/0075 , H01L33/06 , H01L33/32
摘要： Provided is a light emitting device composite substrate suitable for manufacturing large-area light emitting devices at low cost. The light emitting device composite substrate comprises a substrate composed of an oriented polycrystalline alumina sintered body, and a light emitting functional layer formed on the substrate and having two or more layers composed of semiconductor single crystal grains, wherein each of the two or more layers has a single crystal structure in a direction approximately normal to the substrate.
摘要翻译：提供了一种适合于以低成本制造大面积发光器件的发光器件复合衬底。发光器件复合衬底包括由取向多晶氧化铝烧结体构成的衬底和形成在衬底上并具有由半导体单晶晶粒组成的两层或更多层的发光功能层，其中两层或更多层中的每一层具有在大致垂直于衬底的方向上的单晶结构。

8. 发明公开

EP2939259A1 GROUP III-V SUBSTRATE MATERIAL WITH THIN BUFFER LAYER AND METHODS OF MAKING 审中-公开
标题翻译：薄壁缓冲层和方法制造III-V族衬底材料
公开(公告)号：EP2939259A1
公开(公告)日：2015-11-04
申请号：EP13849973.6
申请日：2013-12-31
申请人： Saint-Gobain Cristaux & Détecteurs
发明人： FAURIE, Jean-Pierre , BEAUMONT, Bernard
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： H01L33/32 , C30B25/18 , C30B25/183 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02609 , H01L33/0075 , H01L33/12 , H01S5/3013 , Y10T428/26
摘要： A substrate comprises a Group III-V material having an upper surface and a buffer layer having a thickness of not greater than about 1.3 μm and overlying the upper surface of the substrate. A plurality of optoelectronic devices formed on the substrate having a normalized light emission wavelength standard deviation of not greater than about 0.0641 nm/cm
2 at a wavelength within a range of between about 400 nm to about 550 nm.

9. 发明公开

EP2768013A4 CRYSTAL LAYERED STRUCTURE AND METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR ELEMENT 审中-公开
标题翻译：液晶层结构和生产半导体元件的方法FOR
公开(公告)号：EP2768013A4
公开(公告)日：2015-05-20
申请号：EP12839912
申请日：2012-10-12
申请人： TAMURA SEISAKUSHO KK , KOHA CO LTD
发明人： IIZUKA KAZUYUKI , MORISHIMA YOSHIKATSU , SATO SHINKURO
IPC分类号： H01L21/205 , C23C16/34 , C30B29/38 , H01L33/32
CPC分类号： H01L29/2003 , C30B25/10 , C30B25/16 , C30B25/183 , C30B29/403 , H01L21/02414 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/02565 , H01L21/02573 , H01L21/0262 , H01L33/0066 , H01L33/007 , H01L33/12 , H01L33/32

10. 发明公开

EP2862206A2 MULTILAYER SUBSTRATE STRUCTURE AND METHOD AND SYSTEM OF MANUFACTURING THE SAME 审中-公开
标题翻译：多层基板结构及其制造方法和系统
公开(公告)号：EP2862206A2
公开(公告)日：2015-04-22
申请号：EP13803800.5
申请日：2013-06-12
申请人： Tivra Corporation
发明人： DE, Indranil , MACHUCA, Francisco
IPC分类号： H01L33/00 , H01L29/15 , H01L33/04
CPC分类号： C30B1/02 , C30B23/005 , C30B23/025 , C30B25/165 , C30B25/183 , C30B25/186 , C30B29/403 , C30B29/52
摘要： A multilayer substrate structure comprises a substrate, a thermal matching layer formed on the substrate and a lattice matching layer above the thermal matching layer. The thermal matching layer includes at least one of molybdenum, molybdenum-copper, mullite, sapphire, graphite, aluminum-oxynitrides, silicon, silicon carbide, zinc oxides, and rare earth oxides. The lattice matching layer includes a first chemical element and a second chemical element to form an alloy. The first and second chemical element has similar crystal structures and chemical properties. The coefficient of thermal expansion of the thermal matching layer and the lattice parameter of the lattice matching layer are both approximately equal to that of a member of group III-V compound semiconductors. The lattice constant of the lattice matching layer is approximately equal to that of a member of group III-V compound semiconductor. The lattice matching layer and the thermal matching layer may be deposited on a substrate using a lateral control shutter.
摘要翻译：多层衬底结构包括衬底，在衬底上形成的热匹配层和在热匹配层上的晶格匹配层。热匹配层包括钼，钼 - 铜，莫来石，蓝宝石，石墨，铝 - 氮氧化物，硅，碳化硅，氧化锌和稀土氧化物中的至少一种。晶格匹配层包括第一化学元素和第二化学元素以形成合金。第一和第二化学元素具有相似的晶体结构和化学性质。热匹配层的热膨胀系数和晶格匹配层的晶格参数都近似等于III-V族化合物半导体的成员的热膨胀系数。晶格匹配层的晶格常数近似等于III-V族化合物半导体的晶格常数。晶格匹配层和热匹配层可以使用横向控制快门沉积在衬底上。

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