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1. 发明授权

EP3125030B1 QUANTUM ROD LAYER, METHOD OF FABRICATING THE SAME AND DISPLAY DEVICE INCLUDING THE SAME 有权
公开(公告)号：EP3125030B1
公开(公告)日：2018-11-28
申请号：EP15203105.0
申请日：2015-12-30
申请人： LG Display Co., Ltd.
发明人： PARK, Seung-Ryull , PARK, Hyun-Jin , AHN, Han-Jin
IPC分类号： G02F1/13357
CPC分类号： G02F1/133617 , B32B2457/202 , G02B5/3025 , G02F1/133528 , G02F1/13362 , G02F1/1337 , G02F1/133788 , G02F1/3532 , G02F2001/133614 , G02F2202/36 , H01L31/035227 , Y10T428/1005 , Y10T428/1036
摘要： The present invention provides a quantum rod layer (124, 126) including: a photo-induced polymer (150) including a base polymer aligned along a first direction and a photo-reactive group combined to the base polymer; and a quantum rod (154) aligned along the first direction. When irradiated by UV or blue light the quantum rod layer (124) emits polarized coloured light.

3. 发明公开

EP3323151A1 DISPOSITIF OPTOELECTRONIQUE A ELEMENTS SEMICONDUCTEURS TRIDIMENSIONNELS ET SON PROCEDE DE FABRICATION 审中-公开
公开(公告)号：EP3323151A1
公开(公告)日：2018-05-23
申请号：EP16747543.3
申请日：2016-07-13
申请人： Aledia , Commissariat à l'Energie Atomique et aux Energies Alternatives , Université Grenoble Alpes
发明人： GILET, Philippe , DUSSAIGNE, Amélie , SALOMON, Damien , EYMERY, Joel , DURAND, Christophe
IPC分类号： H01L33/00 , H01L31/18 , H01L31/0352 , H01L21/02
CPC分类号： H01L21/0254 , C30B25/02 , C30B29/40 , C30B29/66 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L27/1443 , H01L27/153 , H01L31/035227 , H01L31/035236 , H01L31/035281 , H01L31/1856 , H01L33/0075 , H01L33/18 , H01L33/24 , H01L33/32 , Y02E10/544 , Y02P70/521
摘要： The invention relates to a method for manufacturing an optoelectronic device (50) including wire-like, conical, or frustoconical semiconductor elements (20) predominantly comprising a III-V compound. Each semiconductor element extends along an axis and includes a portion (54), the side surfaces (55) of which are covered with a shell (56) including at least one active region (31), wherein the portions are created by continuous growth in a reactor, and wherein the temperature in the reactor varies in an uninterrupted manner from a first temperature value that favors growth of first crystallographic planes perpendicular to said axis, to a second temperature value that is strictly lower than the first temperature value and favors growth of second crystallographic planes parallel to said axis.

4. 发明公开

EP3301728A1 ENERGY SELECTIVE PHOTODETECTOR 审中-公开
标题翻译：能量选择性光电探测器
公开(公告)号：EP3301728A1
公开(公告)日：2018-04-04
申请号：EP17183442.7
申请日：2017-07-27
申请人： Sharp Kabushiki Kaisha
发明人： DIMMOCK, James Andrew Robert , KAUER, Matthias , EKINS-DAUKES, Nicholas J. , STAVRINOU, Paul N.
IPC分类号： H01L31/108
CPC分类号： H01L31/035227 , H01L31/02 , H01L31/02161 , H01L31/02168 , H01L31/022408 , H01L31/022425 , H01L31/02327 , H01L31/03046 , H01L31/035209 , H01L31/07 , H01L31/108 , H01L31/1085 , Y02E10/50
摘要： A semiconductor device has a layered structure. The semiconductor device includes a metallic layer of thickness 1-100nm, with a thickness optimised to absorb light in a wavelength range of operation. The device further includes an adjacent semiconductor layer additionally adjacent to an ohmic electrical contact, wherein the interface between the metallic layer and the semiconductor layer is electrically rectifying and energy selective. The device further includes a reflective back surface positioned opposite to the semiconductor layer relative to incident light providing broadband reflection in the wavelength range of operation. The semiconductor layer includes a quantum well adjacent to the metallic layer, wherein the energy selectivity is provided by the quantum well allowing charge carrier tunneling from the metallic layer. The device further may include an additional anti-reflection dielectric layer deposited on the metallic layer that is configured to minimise reflection of light in the wavelength range of operation.
摘要翻译：半导体器件具有分层结构。该半导体器件包括厚度为1-100nm的金属层，其厚度被优化以吸收在工作波长范围内的光。该器件还包括附加的与欧姆电触点相邻的半导体层，其中金属层和半导体层之间的界面是电整流和能量选择性的。该器件还包括反射后表面，该反射后表面相对于在工作的波长范围内提供宽带反射的入射光定位在半导体层的对面。半导体层包括与金属层相邻的量子阱，其中能量选择性由量子阱提供，允许电荷载流子从金属层隧穿。该器件还可以包括沉积在金属层上的附加抗反射介电层，该附加抗反射介电层被配置成使波长范围内的光的反射最小化。

5. 发明公开

EP3241246A1 PROCÉDÉ DE FABRICATION DE NANOFILS OU DE MICROFILS SEMICONDUCTEURS A PIEDS ISOLES 有权
标题翻译：制造隔离足部半导体纳米线或微米的方法
公开(公告)号：EP3241246A1
公开(公告)日：2017-11-08
申请号：EP15823722.2
申请日：2015-12-24
申请人： Aledia , Commissariat à l'énergie atomique et aux énergies alternatives
发明人： POURQUIER, Eric , GIBERT, Philippe , MARTIN, Brigitte
IPC分类号： H01L33/18 , H01L31/0352 , H01L33/44 , H01L33/08 , H01L33/24 , H01L33/46
CPC分类号： H01L33/24 , H01L31/02161 , H01L31/022408 , H01L31/035227 , H01L31/03529 , H01L31/1828 , H01L31/184 , H01L33/06 , H01L33/08 , H01L33/18 , H01L33/405 , H01L33/44 , H01L33/46 , H01L2933/0016 , H01L2933/0025 , Y02E10/543 , Y02E10/544
摘要： The invention relates to a process for fabricating an electronic device (10) comprising a substrate (14) and microwires or nanowires (20) resting on the substrate, the process comprising successive steps consisting in covering the wires with an insulating layer (26), in covering the insulating layer with an opaque layer, in depositing a first photoresist layer over the substrate between the wires, in etching the first photoresist layer over a first thickness by photolithography, in etching the first photoresist layer remaining after the preceding step over a second thickness by plasma etching, in etching the portion of the opaque layer not covered by the first photoresist layer remaining after the preceding step, in etching the portion of the insulating layer not covered by the opaque layer, in removing the first photoresist layer remaining after the preceding step, and in removing the opaque layer.

6. 发明公开

EP3224858A1 DISPOSITIF OPTOÉLECTRONIQUE Á ÉLÉMENTS SEMICONDUCTEURS TRIDIMENSIONNELS ET SON PROCÉDÉ DE FABRICATION 审中-公开
标题翻译： DISPOSITIFOPTOÉLECTRONIQUEÁÉÉÉîÉêSEMESEMICONDUCTEURS TRIDIMENSIONNELS ET SONPROCÉDÉDE FABRICATION
公开(公告)号：EP3224858A1
公开(公告)日：2017-10-04
申请号：EP15805588.9
申请日：2015-11-17
申请人： Commissariat à l'énergie atomique et aux énergies alternatives
发明人： DUSSAIGNE, Amélie , BONO, Hubert
IPC分类号： H01L21/02 , H01L33/08 , H01L33/18 , H01L33/20 , H01L33/24 , H01L33/32
CPC分类号： H01L33/0075 , H01L21/0254 , H01L21/02576 , H01L21/02603 , H01L21/0262 , H01L21/02645 , H01L31/02161 , H01L31/022466 , H01L31/02366 , H01L31/03044 , H01L31/035227 , H01L31/035281 , H01L31/1856 , H01L33/06 , H01L33/08 , H01L33/18 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/42 , H01L33/44
摘要： The invention relates to an optoelectronic device (10) comprising a carrier (14) comprising a face (18) comprising flat butt-jointed facets inclined in relation to each other; seeds (26), mainly consisting of a first compound selected from the group comprising the compounds III-V, the compounds II-VI and the compounds IV, in contact with the carrier in the region of at least some of the joints (22) between the facets; and conical or frustoconical, wire-like three-dimensional semiconductor elements (28) of a nanometric or micrometric size, mainly consisting of said first compound, on the seeds.
摘要翻译：本发明涉及包括载体（14）的光电子器件（10），载体（14）包括面（18），所述面包括相对于彼此倾斜的平坦对接接合面; 在至少一些接头（22）的区域内与载体接触的种子（26）主要由选自化合物III-V，化合物II-VI和化合物IV的组中的第一化合物组成，面之间; 以及在种子上的纳米或微米尺寸的主要由所述第一化合物组成的圆锥形或截头圆锥形的线状三维半导体元件（28）。

7. 发明公开

EP2973712A4 HIGHLY EFFICIENT OPTICAL TO ELECTRICAL CONVERSION DEVICES 审中-公开
标题翻译： ECHECCHENCHE ENERGIE的HOCHEFFIZIENTE VORRICHTUNGEN ZUR UMWANDLUNG VON OPTISCHER
公开(公告)号：EP2973712A4
公开(公告)日：2016-12-07
申请号：EP14780028
申请日：2014-03-12
申请人： UNIV CALIFORNIA
发明人： LO YU-HWA , ZHOU YUCHUN
IPC分类号： H01L31/068 , B82Y10/00 , B82Y40/00 , H01L31/0352 , H01L31/18
CPC分类号： H01L31/1804 , B82Y30/00 , B82Y40/00 , H01L31/035227 , H01L31/068 , Y02E10/547 , Y02P70/521

8. 发明公开

EP2543061A4 A METHOD FOR THE PRODUCTION OF A CONFORMAL ELEMENT, A CONFORMAL ELEMENT AND USES OF THE SAME 有权
标题翻译： VERFAHREN ZUR HERSTELLUNG EINES KONFORMEN元素，KONFORMES ELEMENT UND VERWENDUNG DAVON
公开(公告)号：EP2543061A4
公开(公告)日：2016-08-17
申请号：EP11750245
申请日：2011-03-07
申请人： CANATU OY
发明人： BROWN DAVID P
IPC分类号： G06F3/041 , B82B1/00 , G06F3/044
CPC分类号： B82Y40/00 , B82Y30/00 , G02F1/13338 , G02F1/167 , G02F2001/133334 , H01L31/035227 , H05K1/0216 , H05K2201/0323 , H05K2201/0715 , Y10T156/10
摘要： The embodiment relates to a method for the production of an at least partially electrically conductive or semi-conductive element on a structure, wherein the element comprises one or more layers, and is configured to serve as a capacitive touch and/or proximity sensitive film, the method comprising the steps of a) forming a formable element comprising one or more layers, wherein at least one layer comprises a network of high aspect ratio molecular structures (HARM-structures), wherein the HARM-structures are electrically conductive or semi-conductive, and b) arranging the formable element in a conformal manner onto a structure by thermoforming the formable element on a three-dimensional surface of the structure, for producing a conformal and at least partially electrically conductive or semi-conductive element comprising one or more layers, wherein at least one layer comprises a network of HARM-structures, on the three dimensional surface of the structure.
摘要翻译：本发明涉及一种用于在结构上制造至少部分导电或半导电元件的方法，其中所述元件包括一层或多层，所述方法包括以下步骤：a）形成包含一个或多个层，其中至少一个层包括高纵横比分子结构（HARM结构）的网络，其中所述HARM结构是导电的或半导电的，以及b）将所述可成形元件以共形方式布置在结构上在结构的三维表面上压制和/或真空密封可成形元件，以产生包含一层或多层的保形和至少部分导电或半导电元件，其中至少一层包括HARM网络结构，在结构的三维表面上。此外，本发明涉及保形元件及其应用。

9. 发明公开

EP3033774A1 PHOTOVOLTAIC CELL AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：光伏电池和方法及其生产
公开(公告)号：EP3033774A1
公开(公告)日：2016-06-22
申请号：EP14838216.1
申请日：2014-08-11
申请人： Ramot at Tel-Aviv University Ltd.
发明人： PATOLSKY, Fernando , KOSLOFF, Alon
IPC分类号： H01L31/0725 , H01L31/0352 , H01L31/18 , H01L31/0687 , H01L31/0745 , H01L21/02
CPC分类号： H01L31/028 , H01L21/0245 , H01L21/0251 , H01L21/02513 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02653 , H01L31/022425 , H01L31/035227 , H01L31/03529 , H01L31/0687 , H01L31/0725 , H01L31/0745 , H01L31/1812 , Y02E10/544
摘要： A photovoltaic cell device is disclosed. The device comprises: an active region having a plurality of spaced-apart elongated nanostructures aligned vertically with respect to an electrically conductive substrate, wherein each elongated nanostructure has at least one p-n junction characterized by a bandgap within the electromagnetic spectrum, and is coated by an electrically conductive layer being electrically isolated from the substrate.

10. 发明公开

EP3028296A1 APPARATUS AND METHODS FOR CONTINUOUS FLOW SYNTHESIS OF SEMICONDUCTOR NANOWIRES 审中-公开
标题翻译： DEVICE AND METHOD FOR半导体纳米线的连续流动合成
公开(公告)号：EP3028296A1
公开(公告)日：2016-06-08
申请号：EP14832452.8
申请日：2014-07-29
申请人： US Nano LLC
发明人： ONICHA, Anthony C. , SINKS, Louise E. , WEBER, Stefanie L.
IPC分类号： H01L21/20
CPC分类号： H01L31/1828 , B01J19/0093 , B01J2219/00792 , B01J2219/00813 , B01J2219/00831 , B01J2219/00835 , B01J2219/00842 , B01J2219/00867 , B01J2219/00869 , B01J2219/00873 , B01J2219/00889 , B01J2219/00894 , B01J2219/00905 , B01J2219/00959 , B01J2219/00961 , B01J2219/0097 , B05C3/10 , C01B19/002 , C01B19/007 , C01P2002/82 , C01P2002/84 , C01P2004/04 , C01P2004/16 , C01P2004/54 , H01L31/035209 , H01L31/035227 , H01L31/18 , Y02P70/521
摘要： Apparatuses and methods for synthesizing nanoscale materials are provided, including semiconductor nanowires. Precursor solutions include mixed reagent precursor solutions of metal and chalcogenide precursors and a catalyst, where such solutions are liquid at room temperature. The precursor solutions are mixed by dividing a solution flow into multiple paths and converging the paths to form a uniform solution. A thermally controlled reactor receives the uniform solution to form semiconductor nanowires. Various electronic, optical, and sensory devices may employ the semiconductor nanowires described herein, for example.
摘要翻译：提供了用于合成纳米级材料的装置和方法，包括半导体纳米线。前体溶液包括金属硫属化物和前体和催化剂，其中的搜索解决方案是在室温下为液体的混合试剂的前体溶液。所述前体溶液是通过将溶液流分成多个路径和会聚路径以形成均匀的溶液混合。热控制的反应器接收到均匀的溶液，以形成半导体纳米线。各种电子，光学和感觉装置可以采用描述于实施例的半导体纳米线。

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