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1. 发明公开

EP1736572A1 GROUP III NITRIDE CRYSTAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译： GRUPPE-III-NITRID-KRISTALLSUBSTRAT，HERSTELLUNGSVERFAHRENDAFÜRUND GRUPPE-III-NITRID-HALBLEITERELEMENT
公开(公告)号：EP1736572A1
公开(公告)日：2006-12-27
申请号：EP05721657.4
申请日：2005-03-30
申请人： Sumitomo Electric Industries, Ltd. , Mori, Yusuke
发明人： SASAKI, Takatomo , MORI, Yusuke , YOSHIMURA, Masashi , KAWAMURA, Fumio , HIROTA, Ryu , NAKAHATA, Seiji
IPC分类号： C30B29/38 , C30B9/10 , C30B11/06 , H01L21/208
CPC分类号： C30B9/08 , C30B9/00 , C30B11/00 , C30B11/06 , C30B29/403
摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance (1), a group III-element-containing substance (2) and a nitrogen-element-containing substance (3) into a reactor (51), forming a melt (5) containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor (51), and growing group III-nitride crystal (6) from the melt (5), and characterized by handling the alkali-metal-element-containing substance (1) in a drying container (100) in which moisture concentration is controlled to at most 1.0ppm at least in the step of introducing the alkali-metal-element-containing substance (1) into the reactor (51) is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.
摘要翻译：一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质（1），含III族元素的物质（2）和含氮元素的物质（3 ）形成反应器（51），形成至少含有反应器（51）中的碱金属元素，第III族元素和氮元素的熔体（5），以及来自所述反应器（51）的生长III族氮化物晶体熔融（5），其特征在于，在将水分浓度控制在1.0ppm以下的干燥容器（100）中处理含碱金属元素的物质（1），至少在引入碱金属含有元素的物质（1）进入反应器（51）。因此可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。

2. 发明公开

EP1634980A9 METHOD FOR PRODUCING GROUP III NITRIDE SINGLE CRYSTAL AND APPARATUS USED THEREFOR 审中-公开
标题翻译：用于生产III族氮化物单晶及其装置
公开(公告)号：EP1634980A9
公开(公告)日：2006-05-10
申请号：EP04720698.2
申请日：2004-03-15
申请人： Osaka Industrial Promotion Organization
发明人： SASAKI, Takatomo , MORI, Yusuke , YOSHIMURA, Masashi , KAWAMURA, Fumio , UMEDA, Hidekazu
IPC分类号： C30B29/38 , C30B11/06
CPC分类号： C30B9/10 , C30B29/403 , C30B29/406 , Y10T117/1092 , Y10T117/1096
摘要： A production method is provided in which Group-III-element nitride single crystals that have a lower dislocation density and a uniform thickness and are transparent, high quality, large, and bulk crystals can be produced with a high yield. The method for producing Group-III-element nitride single crystals includes: heating a reaction vessel containing at least one metal element selected from the group consisting of an alkali metal and an alkaline-earth metal and at least one Group III element selected from the group consisting of gallium (Ga), aluminum (Al), and indium (In) to prepare a flux of the metal element; and feeding nitrogen-containing gas into the reaction vessel and thereby allowing the Group III element and nitrogen to react with each other in the flux to grow Group-III-element nitride single crystals, wherein the single crystals are grown, with the flux being stirred by rocking the reaction vessel, for instance.

3. 发明公开

EP0065373A1 Method fabricating a polycrystalline silicon wafer 失效
标题翻译：一种用于生产多晶硅晶片的过程。
公开(公告)号：EP0065373A1
公开(公告)日：1982-11-24
申请号：EP82302246.2
申请日：1982-04-30
申请人： HOXAN CORPORATION
发明人： Maeda, Yasuhiro Hoxan Laboratory of Hoxan Corp , Yokoyama, Takashi Hoxan Laboratory of Hoxan Corp , Yagihashi, Shinichi Hoxan Laboratory of Hoxan Corp
IPC分类号： C30B11/00 , C30B11/06
CPC分类号： C30B11/008 , C30B11/00 , C30B29/06 , C30B29/605
摘要： A method of fabricating a polycrystalline silicon wafer, which method advantageously has the steps of radially outwardly flowing molten liquid of silicon base material on the wafer forming surface of a turntable mechanism by means of centrifugal force, thereby forming a thin molten liquid layer in a prescribed atmosphere, and cooling and solidifying the same. An apparatus for fabricating the wafer is used to carry out the method with a recover tray arranged at the wafer forming surface for receiving the excessive silicon liquid scattered, and a wafer tray placed on the recovery tray, and the wafer forming surface is cooled with coolant flowing in the wafer forming mechanism. Thus, large crystalline grains can be grown on the wafer in free states with the atmosphere from the inner surfaces of the casting mold as the conventional method.

4. 发明授权

EP3109294B1 SCINTILLATOR 有权
公开(公告)号：EP3109294B1
公开(公告)日：2018-08-01
申请号：EP16758076.0
申请日：2016-03-18
申请人： Nihon Kessho Kogaku Co., Ltd.
发明人： TOTSUKA, Daisuke
IPC分类号： C09K11/61 , G01T1/20 , G01T1/202 , G21K4/00 , C30B11/12 , C30B11/00 , C30B29/12 , C30B11/06
CPC分类号： G01T1/2023 , C09K11/7435 , C30B11/002 , C30B11/003 , C30B11/065 , C30B29/12 , G01T1/20 , G01T1/202 , G21K4/00
摘要： The present invention relates to a scintillator having a crystal containing CsI (cesium iodide) as a host material thereof and thallium (Tl) and bismuth (Bi), and provides a novel scintillator which maintains a high output and simultaneously can further enhance the afterglow characteristics. There is proposed a scintillator having a crystal containing CsI (cesium iodide) as a host material thereof and Tl, Bi and O, wherein the concentration a of Bi with respect to Cs in the crystal is 0.001 atomic ppm ‰¤ a ‰¤ 5 atomic ppm; and the ratio (a/b) of the concentration a of Bi with respect to Cs in the crystal to the concentration b of O with respect to I in the crystal is 0.005 × 10 -4 to 200 × 10 -4 .

5. 发明公开

EP3176290A1 POLY-CRYSTALLINE OR MULTI-CRYSTALLINE SILICON INGOT AND USE FOR THE MANUFACTURE OF SOLAR CELLS 审中-公开
标题翻译：多晶或多晶硅锭及用于制造太阳能电池的用途
公开(公告)号：EP3176290A1
公开(公告)日：2017-06-07
申请号：EP17151493.8
申请日：2007-12-21
申请人： Freiberger Compound Materials GmbH
发明人： EICHLER, Stefan , WEINERT, Berndt , JURISCH, Manfred
IPC分类号： C30B29/06 , C30B11/00 , H01L31/18 , C30B11/06
CPC分类号： C30B11/00 , C30B11/002 , C30B11/003 , C30B11/006 , C30B11/06 , C30B29/06 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： An ingot is disclosed which is formed of crystalline silicon through directed solidification of a silicon starting material, wherein the ingot comprises no or essentially no foreign precipitations or inclusions of silicon carbide (SiC) and/or silicon nitride (SiN, Si 3 N 4 ). A process and a device for producing crystalline silicon, particularly poly- or multi-crystalline silicon are described, wherein a melt of a silicon starting material is formed and the silicon melt is subsequently solidified in a directed orientation. A phase or a material is provided in gaseous, fluid or solid form above the melt in such a manner, that a concentration of a foreign atom selected from oxygen, carbon and nitrogen in the silicon melt and thus in the solidified crystalline silicon is controllable, and/or that a partial pressure of a gaseous component in a gas phase above the silicon melt is adjustable and/or controllable, the gaseous component being selected from oxygen gas, carbon gas and nitrogen gas and gaseous species containing at least one element selected from oxygen, carbon and nitrogen. The formation of impurity compound precipitations or inclusions, in particular of silicon carbide affecting electric properties of solar cells, can be effectively inhibited and prevented according to the present invention.
摘要翻译：公开了一种晶锭，其通过硅原材料的定向凝固由晶体硅形成，其中晶锭不包含或基本上不包含碳化硅（SiC）和/或氮化硅（SiN，Si 3 N 4）的外来沉淀或夹杂物。描述了用于制造晶体硅，特别是多晶硅或多晶硅的方法和装置，其中形成硅原材料的熔体并随后将硅熔体以定向的方向固化。在熔体上方以气态，流体或固体形式提供相或材料，使得在硅熔体中以及因此在固化的晶体硅中选自氧，碳和氮的外来原子的浓度是可控的，和/或在硅熔体上方的气相中的气体组分的分压是可调节的和/或可控的，所述气体组分选自氧气，碳气和氮气以及包含选自以下的至少一种元素的气体物质：氧气，碳和氮。根据本发明，可以有效地抑制和防止杂质化合物沉淀或夹杂物，特别是影响太阳能电池电性能的碳化硅的形成。

6. 发明公开

EP1806439A1 METHOD FOR PRODUCING AlN SINGLE CRYSTAL AND AlN SINGLE CRYSTAL 审中-公开
标题翻译： VERFAHREN ZUR HERSTELLUNG VON ALN-EINKRISTALL UND ALN-EINKRISTALL
公开(公告)号：EP1806439A1
公开(公告)日：2007-07-11
申请号：EP05778521.4
申请日：2005-09-05
申请人： NGK INSULATORS, LTD.
发明人： IWAI, Makoto, NGK Insulators, Ltd. , IMAI, Katsuhiro, NGK Insulators, Ltd.
IPC分类号： C30B29/38 , C30B11/06
CPC分类号： C30B19/02 , C30B9/10 , C30B29/403
摘要： An AlN single crystal is grown by pressurizing a melt comprising at least gallium, aluminum and sodium in an atmosphere comprising nitrogen. Preferably, the AlN single crystal is grown under a nitrogen partial pressure of 50 atms or lower and at a temperature of 850 °C or higher and 1200 °C or lower.
摘要翻译：通过在包含氮的气氛中对包含至少镓，铝和钠的熔体进行加压来生长AlN单晶。优选地，AlN单晶在50atms以下的氮分压和850℃以上且1200℃以下的温度下生长。

7. 发明公开

EP1634980A1 METHOD FOR PRODUCING GROUP III NITRIDE SINGLE CRYSTAL AND APPARATUS USED THEREFOR 审中-公开
标题翻译：生产III族氮化物单晶的方法和用于此的装置
公开(公告)号：EP1634980A1
公开(公告)日：2006-03-15
申请号：EP04720698.2
申请日：2004-03-15
申请人： Osaka Industrial Promotion Organization
发明人： SASAKI, Takatomo , MORI, Yusuke , YOSHIMURA, Masashi , KAWAMURA, Fumio , UMEDA, Hidekazu
IPC分类号： C30B29/38 , C30B11/06
CPC分类号： C30B9/10 , C30B29/403 , C30B29/406 , Y10T117/1092 , Y10T117/1096
摘要： A production method is provided in which Group-III-element nitride single crystals that have a lower dislocation density and a uniform thickness and are transparent, high quality, large, and bulk crystals can be produced with a high yield. The method for producing Group-III-element nitride single crystals includes: heating a reaction vessel containing at least one metal element selected from the group consisting of an alkali metal and an alkaline-earth metal and at least one Group III element selected from the group consisting of gallium (Ga), aluminum (Al), and indium (In) to prepare a flux of the metal element; and feeding nitrogen-containing gas into the reaction vessel and thereby allowing the Group III element and nitrogen to react with each other in the flux to grow Group-III-element nitride single crystals, wherein the single crystals are grown, with the flux being stirred by rocking the reaction vessel, for instance.
摘要翻译：提供一种生产方法，其中可以以高产率生产具有较低位错密度和均匀厚度并且是透明的，高质量，大体积和块状晶体的III族元素氮化物单晶。生产III族元素氮化物单晶的方法包括：加热含有至少一种选自碱金属和碱土金属的金属元素和至少一种选自组III的元素的反应容器由镓（Ga），铝（Al）和铟（In）组成以制备金属元素的助熔剂; 并向反应容器中供给含氮气体，由此使III族元素和氮在助熔剂中彼此反应以生长III族元素氮化物单晶，其中生长单晶，同时搅拌助熔剂例如通过摇动反应容器。

8. 发明授权

EP0244987B1 A process for growing a multi-component crystal 失效
标题翻译：一种用于生成多组分晶体的方法
公开(公告)号：EP0244987B1
公开(公告)日：1992-08-12
申请号：EP87303566.1
申请日：1987-04-23
申请人： SUMITOMO ELECTRIC INDUSTRIES LIMITED
发明人： Miyazaki, Kenji c/o Osaka Works of Sumitomo
IPC分类号： C30B11/00 , C30B29/48 , C30B11/06
CPC分类号： C30B11/12 , C30B11/00 , C30B11/003 , C30B11/06 , C30B29/48 , Y10S117/906
摘要： A process for growing a multi-component type crystal from the melt of a starting material consisting of more than three elements of the multi-component crystal in a sealed reaction container. The sealed reaction container is divided into a reaction zone and a vapour pressure control zone which are communicated to each other through a through-opening or openings. The starting material for the multi-component crystal is charged in the reaction zone while a vapour pressure control material consisting of more than two components of the multi-component is charged in the vapour pressure control zone. And then, the temperature in the reaction control zone is adjusted and maintained at a predetermined value to grow the crystal from the melt under a controlled vapour pressure. This process is applicable to produce a wide variety of compound semiconductors of II-VI, III-V or the like, or oxide crystals.

9. 发明授权

EP1428912B1 Method of preparing a compound semiconductor crystal doped with carbon 有权
标题翻译：一种用于生产碳掺杂的化合物半导体晶体的制造方法
公开(公告)号：EP1428912B1
公开(公告)日：2014-11-05
申请号：EP04003550.3
申请日：1999-03-23
申请人： Sumitomo Electric Industries, Ltd.
发明人： Kawase, Tomohiro , Sawada, Shinichi , Tatsumi, Masami
IPC分类号： C30B11/06 , C30B11/12 , C30B29/42
CPC分类号： C30B29/42 , C30B11/06 , C30B11/12

10. 发明公开

EP2444531A2 Method and apparatus for growing semiconductor crystals with a rigid support and with carbon doping 审中-公开
标题翻译：用于生长具有刚性托架半导体的结晶，用碳掺杂方法和设备
公开(公告)号：EP2444531A2
公开(公告)日：2012-04-25
申请号：EP11186406.2
申请日：2002-07-03
申请人： Axt, Inc.
发明人： Liu, Xiao Gordon , Liu, Wei Guo
IPC分类号： C30B11/06 , C30B27/00 , C30B29/42 , C30B35/00 , C30B11/12
CPC分类号： C30B27/00 , C30B11/00 , C30B11/002 , C30B11/04 , C30B11/12 , C30B29/42 , C30B35/002 , Y10T117/1092
摘要： Group III-V, II-VI and related monocrystalline compounds are grown with a rigid support of a sealed ampoule (4000), carbon doping and resistivity control, and thermal gradient control in a crystal growth furnace (1000). A support cylinder provides structural support for the combined sealed ampoule (4000) crucible (3000) assembly, while low-density insulating material inside the support cylinder deters convection and conduction heating. Radiation channels penetrating the low-density material provide pathways for radiation heating into out of the seed well and transition regions of the crystal growth crucible. A hollow core (2030) in the insulation material (2060) directly beneath the seed well (4030) provides cooling in the center of the growing crystal, which enables uniform, level growth of the crystal ingot and a flat crystal-melt interface which results in crystal wafers with uniform electrical properties.
摘要翻译： III-V族，II-VI和相关单晶化合物生长具有刚性支撑的密封安瓿（4000），碳掺杂和电阻率控制，以及热梯度控制在晶体生长炉（1000）的。甲支承筒提供对组合的密封安瓿（4000）坩埚（3000）组件的结构支承，而低密度绝缘材料支承筒内部阻止对流和传导加热。辐射通道穿透低密度材料提供辐射加热的途径进入出晶体生长坩埚的籽晶井和过渡区域。在绝缘材料的中空芯（2030）（2060）的正下方的籽晶井（4030）中生长的晶体的中心，这使得能够均匀，晶体锭的水平生长和一个平坦的晶体 - 熔体界面，这导致提供了冷却在具有均匀电特性的晶体的晶片。

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