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1. 发明公开

EP1736572A1 GROUP III NITRIDE CRYSTAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译： GRUPPE-III-NITRID-KRISTALLSUBSTRAT，HERSTELLUNGSVERFAHRENDAFÜRUND GRUPPE-III-NITRID-HALBLEITERELEMENT
公开(公告)号：EP1736572A1
公开(公告)日：2006-12-27
申请号：EP05721657.4
申请日：2005-03-30
申请人： Sumitomo Electric Industries, Ltd. , Mori, Yusuke
发明人： SASAKI, Takatomo , MORI, Yusuke , YOSHIMURA, Masashi , KAWAMURA, Fumio , HIROTA, Ryu , NAKAHATA, Seiji
IPC分类号： C30B29/38 , C30B9/10 , C30B11/06 , H01L21/208
CPC分类号： C30B9/08 , C30B9/00 , C30B11/00 , C30B11/06 , C30B29/403
摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance (1), a group III-element-containing substance (2) and a nitrogen-element-containing substance (3) into a reactor (51), forming a melt (5) containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor (51), and growing group III-nitride crystal (6) from the melt (5), and characterized by handling the alkali-metal-element-containing substance (1) in a drying container (100) in which moisture concentration is controlled to at most 1.0ppm at least in the step of introducing the alkali-metal-element-containing substance (1) into the reactor (51) is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.
摘要翻译：一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质（1），含III族元素的物质（2）和含氮元素的物质（3 ）形成反应器（51），形成至少含有反应器（51）中的碱金属元素，第III族元素和氮元素的熔体（5），以及来自所述反应器（51）的生长III族氮化物晶体熔融（5），其特征在于，在将水分浓度控制在1.0ppm以下的干燥容器（100）中处理含碱金属元素的物质（1），至少在引入碱金属含有元素的物质（1）进入反应器（51）。因此可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。

2. 发明公开

EP1634980A9 METHOD FOR PRODUCING GROUP III NITRIDE SINGLE CRYSTAL AND APPARATUS USED THEREFOR 审中-公开
标题翻译：用于生产III族氮化物单晶及其装置
公开(公告)号：EP1634980A9
公开(公告)日：2006-05-10
申请号：EP04720698.2
申请日：2004-03-15
申请人： Osaka Industrial Promotion Organization
发明人： SASAKI, Takatomo , MORI, Yusuke , YOSHIMURA, Masashi , KAWAMURA, Fumio , UMEDA, Hidekazu
IPC分类号： C30B29/38 , C30B11/06
CPC分类号： C30B9/10 , C30B29/403 , C30B29/406 , Y10T117/1092 , Y10T117/1096
摘要： A production method is provided in which Group-III-element nitride single crystals that have a lower dislocation density and a uniform thickness and are transparent, high quality, large, and bulk crystals can be produced with a high yield. The method for producing Group-III-element nitride single crystals includes: heating a reaction vessel containing at least one metal element selected from the group consisting of an alkali metal and an alkaline-earth metal and at least one Group III element selected from the group consisting of gallium (Ga), aluminum (Al), and indium (In) to prepare a flux of the metal element; and feeding nitrogen-containing gas into the reaction vessel and thereby allowing the Group III element and nitrogen to react with each other in the flux to grow Group-III-element nitride single crystals, wherein the single crystals are grown, with the flux being stirred by rocking the reaction vessel, for instance.

3. 发明公开

EP0065373A1 Method fabricating a polycrystalline silicon wafer 失效
标题翻译：一种用于生产多晶硅晶片的过程。
公开(公告)号：EP0065373A1
公开(公告)日：1982-11-24
申请号：EP82302246.2
申请日：1982-04-30
申请人： HOXAN CORPORATION
发明人： Maeda, Yasuhiro Hoxan Laboratory of Hoxan Corp , Yokoyama, Takashi Hoxan Laboratory of Hoxan Corp , Yagihashi, Shinichi Hoxan Laboratory of Hoxan Corp
IPC分类号： C30B11/00 , C30B11/06
CPC分类号： C30B11/008 , C30B11/00 , C30B29/06 , C30B29/605
摘要： A method of fabricating a polycrystalline silicon wafer, which method advantageously has the steps of radially outwardly flowing molten liquid of silicon base material on the wafer forming surface of a turntable mechanism by means of centrifugal force, thereby forming a thin molten liquid layer in a prescribed atmosphere, and cooling and solidifying the same. An apparatus for fabricating the wafer is used to carry out the method with a recover tray arranged at the wafer forming surface for receiving the excessive silicon liquid scattered, and a wafer tray placed on the recovery tray, and the wafer forming surface is cooled with coolant flowing in the wafer forming mechanism. Thus, large crystalline grains can be grown on the wafer in free states with the atmosphere from the inner surfaces of the casting mold as the conventional method.

4. 发明授权

EP1428912B1 Method of preparing a compound semiconductor crystal doped with carbon 有权
标题翻译：一种用于生产碳掺杂的化合物半导体晶体的制造方法
公开(公告)号：EP1428912B1
公开(公告)日：2014-11-05
申请号：EP04003550.3
申请日：1999-03-23
申请人： Sumitomo Electric Industries, Ltd.
发明人： Kawase, Tomohiro , Sawada, Shinichi , Tatsumi, Masami
IPC分类号： C30B11/06 , C30B11/12 , C30B29/42
CPC分类号： C30B29/42 , C30B11/06 , C30B11/12

5. 发明公开

EP2444531A2 Method and apparatus for growing semiconductor crystals with a rigid support and with carbon doping 审中-公开
标题翻译：用于生长具有刚性托架半导体的结晶，用碳掺杂方法和设备
公开(公告)号：EP2444531A2
公开(公告)日：2012-04-25
申请号：EP11186406.2
申请日：2002-07-03
申请人： Axt, Inc.
发明人： Liu, Xiao Gordon , Liu, Wei Guo
IPC分类号： C30B11/06 , C30B27/00 , C30B29/42 , C30B35/00 , C30B11/12
CPC分类号： C30B27/00 , C30B11/00 , C30B11/002 , C30B11/04 , C30B11/12 , C30B29/42 , C30B35/002 , Y10T117/1092
摘要： Group III-V, II-VI and related monocrystalline compounds are grown with a rigid support of a sealed ampoule (4000), carbon doping and resistivity control, and thermal gradient control in a crystal growth furnace (1000). A support cylinder provides structural support for the combined sealed ampoule (4000) crucible (3000) assembly, while low-density insulating material inside the support cylinder deters convection and conduction heating. Radiation channels penetrating the low-density material provide pathways for radiation heating into out of the seed well and transition regions of the crystal growth crucible. A hollow core (2030) in the insulation material (2060) directly beneath the seed well (4030) provides cooling in the center of the growing crystal, which enables uniform, level growth of the crystal ingot and a flat crystal-melt interface which results in crystal wafers with uniform electrical properties.
摘要翻译： III-V族，II-VI和相关单晶化合物生长具有刚性支撑的密封安瓿（4000），碳掺杂和电阻率控制，以及热梯度控制在晶体生长炉（1000）的。甲支承筒提供对组合的密封安瓿（4000）坩埚（3000）组件的结构支承，而低密度绝缘材料支承筒内部阻止对流和传导加热。辐射通道穿透低密度材料提供辐射加热的途径进入出晶体生长坩埚的籽晶井和过渡区域。在绝缘材料的中空芯（2030）（2060）的正下方的籽晶井（4030）中生长的晶体的中心，这使得能够均匀，晶体锭的水平生长和一个平坦的晶体 - 熔体界面，这导致提供了冷却在具有均匀电特性的晶体的晶片。

6. 发明公开

EP2115188A4 METHOD AND SYSTEM FOR FORMING A HIGHER PURITY SEMICONDUCTOR INGOT USING LOW PURITY SEMICONDUCTOR FEEDSTOCK 审中-公开
标题翻译：方法和系统用于形成更高纯度的半导体锭采用精简纯度的半导体原材料
公开(公告)号：EP2115188A4
公开(公告)日：2011-12-14
申请号：EP08728730
申请日：2008-01-31
申请人： CALISOLAR INC
发明人： HEUER MATTHIAS , KIRSCHT FRITZ , LINKE DIETER , RAKOTONIAINA JEAN PATRICE , OUNADJELA KAMEL
IPC分类号： C30B11/06 , C30B11/04 , C30B11/14 , C30B27/02 , C30B29/06 , C30B30/00
CPC分类号： C30B29/06 , C30B11/04 , C30B11/14 , Y10T117/1092

7. 发明公开

EP1754810A4 GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, METHOD FOR PRODUCING SAME, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译： III族氮化物半导体晶体，加工用于生产和III族氮化物半导体元件
公开(公告)号：EP1754810A4
公开(公告)日：2009-02-25
申请号：EP05727904
申请日：2005-03-30
申请人： SUMITOMO ELECTRIC INDUSTRIES , MORI YUSUKE
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , KAWAMURA FUMIO , NAKAHATA SEIJI , HIROTA RYU
IPC分类号： C30B29/38 , C30B9/12 , C30B11/00 , C30B11/06 , C30B29/40 , H01L21/208 , H01L33/00 , H01S5/323
CPC分类号： C30B9/12 , C30B11/00 , C30B29/403 , H01L21/02389 , H01L21/02392 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02625 , H01L33/0075 , H01S5/32341

8. 发明公开

EP1754811A1 III GROUP NITRIDE CRYSTAL AND METHOD FOR PREPARATION THEREOF, AND III GROUP NITRIDE CRYSTAL SUBSTRATE AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译： GRUPPE III-NITRID-KRISTALL UND HERSTELLUNGSVERFAHRENDAFÜRUND GRUPPE III-NITRID-KRISTALLSUBSTRAT UND HALBLEITERELEMENT
公开(公告)号：EP1754811A1
公开(公告)日：2007-02-21
申请号：EP05730635.9
申请日：2005-04-15
申请人： Sumitomo Electric Industries, Ltd. , Sasaki, Takatomo
发明人： SASAKI, Takatomo , MORI, Yusuke , YOSHIMURA, Masashi , KAWAMURA, Fumio , NAKAHATA, Seiji, Itami Works of SUMITOMO E.I. LTD , HIROTA, Ryu, Itami Works of SUMITOMO E.I. LTD
IPC分类号： C30B29/38 , C30B9/10 , C30B11/06 , H01L33/00
CPC分类号： C30B29/403 , C30B9/00 , C30B11/00 , H01L33/0075 , H01L33/32
摘要： A method of manufacturing a group III-nitride crystal includes the steps of: preparing a seed crystal (10), and growing a first group III-nitride crystal (21) on the seed crystal (10) by liquid phase method; wherein in the step of growing a first group III-nitride crystal (21) on the seed crystal (10), rate of crystal growth V H in a direction parallel to a main surface (10h) of the seed crystal (10) is higher than rate of crystal growth V V in a direction vertical to the main surface (10h) of the seed crystal (10). By the manufacturing method, a group III-nitride crystal is obtained, of which dislocation density of a surface parallel to the main surface (10h) of the seed crystal (10) is as low as at most 5 × 10 6 /cm 2 .
摘要翻译：制备III族氮化物晶体的方法包括以下步骤：制备晶种（10），并通过液相法在晶种（10）上生长第一III族氮化物晶体（21）; 其特征在于，在晶种（10）上生长第一III族氮化物晶体（21）的步骤中，与晶种（10）的主表面（10h）平行的方向的晶体生长速度V H高于在垂直于晶种（10）的主表面（10h）的方向上的晶体生长速率V V。通过该制造方法，得到与晶种（10）的主面（10h）平行的面的位错密度为5×10 6 / cm 2以下的III族氮化物晶体。

9. 发明公开

EP0244987A1 A process for growing a multi-component crystal 失效
标题翻译： Verfahren zurZüchtungeines Multikomponent-Kristalls。
公开(公告)号：EP0244987A1
公开(公告)日：1987-11-11
申请号：EP87303566.1
申请日：1987-04-23
申请人： SUMITOMO ELECTRIC INDUSTRIES LIMITED
发明人： Miyazaki, Kenji c/o Osaka Works of Sumitomo
IPC分类号： C30B11/00 , C30B29/48 , C30B11/06
CPC分类号： C30B11/12 , C30B11/00 , C30B11/003 , C30B11/06 , C30B29/48 , Y10S117/906
摘要： process for growing a multi-component type crystal from the melt of a starting material consisting of more than three elements of the multi-component crystal in a sealed reaction container. The sealed reaction container is divided into a reaction zone and a vapour pressure control zone which are communicated to each other through a through-opening or openings. The starting material for the multi-component crystal is charged in the reaction zone while a vapour pressure control material consisting of more than two components of the multi-component is charged in the vapour pressure control zone. And then, the temperature in the reaction control zone is adjusted and maintained at a predetermined value to grow the crystal from the melt under a controlled vapour pressure. This process is applicable to produce a wide variety of compound semiconductors of II-VI, III-V or the like, or oxide crystals.
摘要翻译：在密封的反应容器中由多组分晶体的三种元素组成的起始材料的熔体中生长多组分型晶体的方法。密封的反应容器分成反应区和蒸气压控制区，它们通过通孔或开口相互连通。将多组分晶体的起始材料装入反应区，同时将由多组分多于两种组分组成的蒸气压控制材料装入蒸气压控制区。然后，将反应控制区中的温度调节并保持在预定值，以在受控蒸气压下从熔体中生长晶体。该方法适用于生产各种各样的II-VI，III-V等化合物半导体或氧化物晶体。

10. 发明授权

EP2140046B1 PROCESS FOR PRODUCING POLY-CRYSTALLINE OR MULTI-CRYSTALLINE SILICON 有权
标题翻译：生产多晶硅或多晶硅的方法
公开(公告)号：EP2140046B1
公开(公告)日：2017-06-21
申请号：EP07857085.0
申请日：2007-12-21
申请人： Freiberger Compound Materials GmbH
发明人： WEINERT, Berndt , JURISCH, Manfred , EICHLER, Stefan
IPC分类号： C30B11/00 , C30B11/06 , C30B29/06 , H01L31/18
CPC分类号： C30B11/00 , C30B11/002 , C30B11/003 , C30B11/006 , C30B11/06 , C30B29/06 , H01L31/182 , Y02E10/546 , Y02P70/521

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