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1. 发明公开

EP4378890A1 SYSTEMS AND METHODS FOR PRODUCING SILICON CARBIDE POWDER 审中-公开
公开(公告)号：EP4378890A1
公开(公告)日：2024-06-05
申请号：EP23203472.8
申请日：2023-10-13
申请人： Honeywell International Inc.
发明人： MEHR, Mehrad , JADIDIAN, Bahram
IPC分类号： C01B32/956 , C01B32/963
CPC分类号： C01B32/956 , C01B32/963
摘要： Methods and systems are provided for producing silicon carbide. The system comprises an enclosure configured to be maintained under vacuum conditions and at a processing temperature above a melting temperature of silicon, a vapor production system configured to supply a silicon vapor to the enclosure, and a transportation system configured to provide a stream of graphite powder into the enclosure, retain the graphite powder within the enclosure for a processing time sufficient to react the graphite powder with the silicon vapor to produce a silicon carbide powder, and then provide a stream of the silicon carbide powder out of the enclosure.

2. 发明公开

EP3406769A1 SILICON-BASED MELT COMPOSITION AND METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL USING SAME 审中-公开
公开(公告)号：EP3406769A1
公开(公告)日：2018-11-28
申请号：EP17856575.0
申请日：2017-08-22
申请人： LG Chem, Ltd.
发明人： CHUNG, Chan Yeup , LEE, Ho Rim , KIM, Kyoung Hoon , KO, Jung Min
IPC分类号： C30B29/36 , H01L21/02 , C30B19/04
CPC分类号： C30B19/04 , C01B32/956 , C30B9/06 , C30B9/10 , C30B29/36 , H01L21/02
摘要： A silicon-based molten composition according to an exemplary embodiment is used for a solution growth method for forming a silicon carbide single crystal, and represented by Formula 1 including silicon (Si), a first metal M1, a second metal M2 and a third metal M3, wherein the first metal M1 is one or more selected from the group consisting of nickel (Ni) and manganese (Mn), the second metal M2 is one or more selected from the group consisting of scandium (Sc) and titanium (Ti), and the third metal M3 is one or more selected from the group consisting of aluminum (Al) and gallium (Ga):

Si a M1 b M2 c M3 d Formula 1

wherein a is 0.3 to 0.8, b is 0.1 to 0.5, c is 0.01 to 0.3, d is 0.01 to 0.2, and a+b+c+d is 1.

3. 发明公开

EP3264505A4 SILICON ANODE ACTIVE MATERIAL AND PREPARATION METHOD THEREFOR 审中-公开
公开(公告)号：EP3264505A4
公开(公告)日：2018-08-01
申请号：EP15883413
申请日：2015-02-24
申请人： NEXEON LTD
发明人： CHO YOUNG TAI , CHOI YONG GIL , PARK SEON , LEE YOUNG JAE , SEO HEE YOUNG , PARK JEE HYE , LEE YONG EUI , HONG YOUNG JIN
IPC分类号： H01M4/38 , C01B32/956 , H01M4/02 , H01M4/587 , H01M4/62 , H01M4/88
CPC分类号： H01M4/587 , C01B32/956 , H01M4/38 , H01M4/386 , H01M4/62 , H01M4/622 , H01M4/8885 , H01M2004/027
摘要： The present invention relates to a silicon anode active material capable of high capacity and high output, and a method for fabricating the same. A silicon anode active material according to an embodiment of the present invention includes a silicon core including silicon particles; and a double clamping layer having a silicon carbide layer on the silicon core and a silicon oxide layer between the silicon core and the silicon carbide layer.

4. 发明公开

EP3239100A4 COMPOSITE SUBSTRATE, METHOD FOR FORMING NANOCARBON FILM, AND NANOCARBON FILM 审中-公开
公开(公告)号：EP3239100A4
公开(公告)日：2018-07-11
申请号：EP15872860
申请日：2015-12-16
申请人： SHINETSU CHEMICAL CO
发明人： AKIYAMA SHOJI , KUBOTA YOSHIHIRO , KAWAI MAKOTO , KONISHI SHIGERU , MOGI HIROSHI
IPC分类号： C01B32/05 , B32B9/00 , B32B15/04 , C01B32/184 , C01B32/956 , H01L21/02 , H01L21/265 , H01L29/06
CPC分类号： B32B9/00 , B32B15/04 , C01B32/05 , C01B32/184 , C01B32/956 , H01L21/02 , H01L21/265 , H01L29/06
摘要： Provided is a composite substrate which is provided with: a single crystal silicon carbide thin film 11 having a thickness of 1 µm or less; a handle substrate 12 which supports the single crystal silicon carbide thin film 11 and is formed from a heat-resistant material (excluding single crystal silicon carbide) having a heat resistance of not less than 1,100°C; and an intervening layer 13 which has a thickness of 1 µm or less and is arranged between the single crystal silicon carbide thin film 11 and the handle substrate 12, and which is formed from at least one material selected from among silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, zirconium oxide, silicon and silicon carbide, or from at least one metal material selected from among Ti, Au, Ag, Cu, Ni, Co, Fe, Cr, Zr, Mo, Ta and W. This composite substrate according to the present invention enables the formation of a nanocarbon film having few defects at low cost.

5. 发明公开

EP3265424A1 VERFAHREN ZUM HERSTELLEN EINES FASERVERSTÄRKTEN TRANSPARENTEN KOMPOSITWERKSTOFFS UND TRANSPARENTER FASERVERSTÄRKTER KOMPOSITWERKSTOFF 有权
标题翻译：生产纤维增强透明复合材料和透明纤维增强复合材料的方法
公开(公告)号：EP3265424A1
公开(公告)日：2018-01-10
申请号：EP16707426.9
申请日：2016-03-01
申请人： Universität Paderborn
发明人： GREULICH-WEBER, Siegmund
IPC分类号： C01B31/36 , C03C14/00
CPC分类号： C01B32/956 , C03C14/002 , C03C2214/02 , C03C2214/30 , C08J5/005 , C08J5/044 , C08J2333/12
摘要： The present invention relates to a method for producing a fibre-reinforced, transparent composite material (10), comprising the following steps: a) providing a material matrix melt and b) producing reinforcing fibres (14), step b) of the method comprising the steps of b1) providing a mixture having a silicon source and a carbon source, the silicon source and the carbon source being present together in particles of a granulated solid; b2) treating the mixture provided in step a) of the method at a temperature in a range from ≥ 1400°C to ≤ 2000°C, more particularly in a range from ≥ 1650°C to ≤ 1850°C; thereby producing reinforcing fibres (14), the method comprising the further steps of c) introducing the reinforcing fibres (14) into the material melt; and d) optionally cooling the material melt to form a transparent composite material (10). A method of this kind allows a composite material to be produced that is able to unite high transparency with outstanding reinforcing qualities.

6. 发明授权

EP2470473B1 METHOD FOR MANUFACTURING SILICON CARBIDE PULVERULENT BODY 有权
标题翻译：制造碳化硅蓬松体的方法
公开(公告)号：EP2470473B1
公开(公告)日：2017-12-20
申请号：EP10812298.7
申请日：2010-08-26
申请人： LG Innotek Co., Ltd.
发明人： KIM, Byungsook , HAN, Jungeun , KIM, Sangmyung
IPC分类号： C01B32/956 , C04B35/626 , C04B35/565 , C04B35/573 , B82Y30/00 , C04B35/634
CPC分类号： B82Y30/00 , C01B32/956 , C04B35/573 , C04B35/6261 , C04B35/6267 , C04B35/6268 , C04B35/63404 , C04B35/63408 , C04B35/63416 , C04B35/63424 , C04B35/63456 , C04B35/63496 , C04B2235/3418 , C04B2235/424 , C04B2235/48 , C04B2235/5288 , C04B2235/5436 , C04B2235/5454 , C04B2235/72
摘要： Disclosed herein is a high-purity carbon silicon pulverulent body manufacturing method and system. That is, a high-purity carbon silicon pulverulent body manufacturing method of the present invention includes the step of producing a mixture consisting of silicon sources and carbon sources in a mixer; and the step of synthesizing silicon carbide (SiC) pulverulent body by heating the mixture at a vacuum degree of larger than 0.03 torr and equal to and less than 0.5 torr and at a temperature of equal to or larger than 1300° C. and equal to and less than 1900° C.

7. 发明授权

EP2778130B1 NANO-SILICON/CARBON COMPOSITE MATERIAL AND PREPARATION METHOD THEREFOR 有权
标题翻译：纳米硅/碳复合材料及其制备方法
公开(公告)号：EP2778130B1
公开(公告)日：2017-10-11
申请号：EP12848316.1
申请日：2012-11-09
申请人： China Automotive Battery Research Institute Co, Ltd.
发明人： LU, Shigang , YANG, Juanyu , WANG, Xingming , DING, Haiyang , GAO, Zhefeng
IPC分类号： H01M4/36 , C25B1/00 , H01M4/04 , H01M4/38 , H01M4/48 , H01M4/58 , H01M4/587 , B82Y30/00 , H01M4/1393 , H01M4/1395 , H01M10/052
CPC分类号： H01M4/364 , B82Y30/00 , C01B32/956 , C25B1/006 , H01M4/0438 , H01M4/1393 , H01M4/1395 , H01M4/386 , H01M4/483 , H01M4/58 , H01M4/587 , H01M10/052

8. 发明授权

EP2935099B1 PROCÉDÉ POUR LE CONTRÔLE DE LA PRODUCTION DE NANOPOUDRE DE DIAMÈTRE DONNÉ À PARTIR D'AU MOINS D'ACÉTYLÈNE CONTENU DANS UNE BOUTEILLE PRESSURISÉE 有权
标题翻译：方法用于控制与至少一个乙炔一定直径的纳米粉末的制造在压力负载辊
公开(公告)号：EP2935099B1
公开(公告)日：2017-05-31
申请号：EP13814946.3
申请日：2013-12-20
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： MASKROT, Hicham , GUIZARD, Benoît , ATMAN, Youssef
IPC分类号： C01B32/956 , B82Y40/00 , G01N15/02 , G01N15/00
CPC分类号： C01B31/36 , B82Y40/00 , C01B32/956 , G01N15/0205 , G01N21/55 , G01N2015/0038

9. 发明授权

EP3004214B1 POLYDISILAZANES PREPARED FROM BORON-CONTAINING ADDITIVES 有权
标题翻译：由含硼的添加剂制备的聚二硅氮烷
公开(公告)号：EP3004214B1
公开(公告)日：2017-03-01
申请号：EP14724916.3
申请日：2014-04-09
申请人： General Electric Company
发明人： RUBINSZTAJN, Slawomir , LITTLEJOHN, Matthew, Hal , MILLS, Ryan, Christopher , DAVIS, Peter, Kennedy
IPC分类号： C08G77/56 , C04B35/622 , C08G77/62 , C08G77/60
CPC分类号： C08G77/54 , C01B32/956 , C04B35/62281 , C04B35/62295 , C04B35/6269 , C04B2235/3409 , C04B2235/483 , C04B2235/5264 , C04B2235/9661 , C08G77/60 , C08G77/62 , D01F9/10

10. 发明公开

EP3131846A1 NOVEL PROCESS AND PRODUCT 审中-公开
标题翻译：新闻中心VERFAHREN UND PRODUKT
公开(公告)号：EP3131846A1
公开(公告)日：2017-02-22
申请号：EP15711737.5
申请日：2015-03-20
申请人： Höganäs AB
发明人： ADAM, Gorgees , VIDARSSON, Hilmar
IPC分类号： C01B21/076 , C01B32/90 , C01B33/06 , C01B35/04
CPC分类号： C01B31/305 , C01B21/0617 , C01B21/0761 , C01B32/914 , C01B32/921 , C01B32/949 , C01B32/956 , C01B33/06 , C01B35/04 , C01P2002/54 , C01P2002/70 , C01P2002/72 , C01P2002/85 , C01P2004/03 , C01P2004/51 , C01P2004/61
摘要： The present invention provides a process for manufacturing a compound in powder form, wherein said compound is the reaction product of (i) at least one metal and/or metalloid, and (ii) at least one further element that is more electronegative than the or each said metal and/or metalloid, which process comprises the steps of: a. mixing at least one oxide of said at least one metal and/or metalloid with a reducing agent comprising Ca or Mg granules or powder, and/or calcium hydride or magnesium hydride in granule or powder form, to form a mixture; b. exposing the mixture to a source of said at least one further element; c. maintaining said mixture under a H
2 atmosphere at a temperature of from 950°C to 1500°C for 1-10 hours; and d. recovering said compound in powder form; wherein said at least one further element is selected from carbon, nitrogen, boron, silicon and mixtures thereof. The present invention also provides a compound in powder form obtainable by such a process.
摘要翻译：一种制备粉末形式的化合物的方法，其中所述化合物是（i）至少一种金属和/或准金属的反应产物，和（ii）至少一种比金属和/或准金属更具有电负性的其它元素该方法包括以下步骤：将至少一种金属和/或准金属的至少一种氧化物与包含Ca或Mg颗粒或粉末的还原剂和/或颗粒或粉末形式的氢化钙或氢化镁混合，形成混合物; 将混合物暴露于所述至少一个另外的元件的源; 将所述混合物在氢气氛下在950℃至1500℃的温度下保持1-10小时; 并回收所述粉末形式的化合物; 其中所述至少一种其它元素选自碳，氮，硼，硅及其混合物。通过这种方法获得的粉末形式的化合物。

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