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2. 发明授权

EP2205525B1 METHODS OF PREPARING CLUSTERBORON 失效转让
标题翻译：制备丛生菌的方法
公开(公告)号：EP2205525B1
公开(公告)日：2017-06-14
申请号：EP08845116.6
申请日：2008-11-03
申请人： Semequip, Inc.
发明人： COOK, Kevin, S.
IPC分类号： C01B6/10 , C01B35/02
CPC分类号： C01B6/10 , C01B35/023

3. 发明授权

EP2199258B1 A PROCESS FOR PRODUCING OPTIONALLY DOPED ELEMENTAL BORON 失效转让
标题翻译：生产任选掺杂元素硼的方法
公开(公告)号：EP2199258B1
公开(公告)日：2017-05-31
申请号：EP09180091.2
申请日：2009-12-21
申请人： CONSIGLIO NAZIONALE DELLE RICERCHE , Siri, Antonio Sergio
发明人： Siri, Antonio Sergio , Vignolo, Maurizio
IPC分类号： C01B35/02 , C01B35/04 , C04B35/58
CPC分类号： C01B35/02 , C01B35/023 , C01B35/04 , C04B35/58057 , C04B2235/3232 , C04B2235/3813 , C04B2235/3821 , C04B2235/3826

5. 发明公开

EP2262726A2 SYSTEM AND METHOD FOR LOW-POWER NANOTUBE GROWTH USING DIRECT RESISTIVE HEATING 有权
标题翻译：系统和方法直接电阻加热低功耗管生长
公开(公告)号：EP2262726A2
公开(公告)日：2010-12-22
申请号：EP09732039.4
申请日：2009-02-26
申请人： Raytheon Company
发明人： BARKER, Delmar, L. , JORDAN, Mead, M. , OWENS, William, R.
IPC分类号： C01B31/02 , C01B31/36 , C01B33/02 , C01B35/02 , C01B21/064
CPC分类号： C01B21/0602 , B82Y30/00 , B82Y40/00 , C01B21/064 , C01B32/16 , C01B32/956 , C01B33/02 , C01B35/023 , C01B2202/08 , C01P2004/13 , C30B11/12 , C30B25/00 , C30B29/602 , Y10S977/72 , Y10S977/721 , Y10S977/722 , Y10S977/734 , Y10S977/742 , Y10S977/743 , Y10S977/75 , Y10S977/751 , Y10S977/752 , Y10S977/813 , Y10S977/814 , Y10S977/822 , Y10T117/10 , Y10T117/1016 , Y10T117/102
摘要： Direct resistive heating is used to grow nanotubes out of carbon and other materials. A growth-initiated array of nanotubes is provided using a CVD or ion implantation process. These processes use indirect heating to heat the catalysts to initiate growth. Once growth is initiated, an electrical source is connected between the substrate and a plate above the nanotubes to source electrical current through and resistively heat the nanotubes and their catalysts. A material source supplies the heated catalysts with carbon or another material to continue growth of the array of nanotubes. Once direct heating has commenced, the source of indirect heating can be removed or at least reduced. Because direct resistive heating is more efficient than indirect heating the total power consumption is reduced significantly.

6. 发明公开

EP2221275A2 Verfahren zur Herstellung von hochreinem, amorphen Bor, insbesondere für eine Verwendung bei MgB2 Supraleitern 审中-公开
标题翻译：用于超导体的MgB 2为使用高纯度的无定形硼的制备方法，特别是
公开(公告)号：EP2221275A2
公开(公告)日：2010-08-25
申请号：EP10153652.2
申请日：2010-02-16
申请人： Bruker EAS GmbH
发明人： Aubele, André , Sailer, Bernd
IPC分类号： C01B35/02 , C01B35/04 , H01R39/14
CPC分类号： H01L39/2487 , B01J15/005 , B01J19/285 , B01J2219/0009 , B01J2219/00135 , C01B35/023 , H04R1/1083 , H04R2420/09
摘要： Die Erfindung betrifft ein Verfahren zur Herstellung von hochreinem, amorphen Bor, wobei ein reduzierendes Gas und ein gasförmiges Borhalogenid in eine Reaktionskammer (10;32) eines Reaktors (8;9;30;42) während dessen Betriebs kontinuierlich oder quasikontinuierlich eingeleitet wird, wobei in der Reaktionskammer (10;32) des Reaktors (8;9;30;42) eine Oberfläche eines Katalysators (15;20;37) zur Verfügung gestellt wird, der die Reaktion des Borhalogenids zu Bor unterstützt, und wobei an der Oberfläche des Katalysators (15;20;37) abgeschiedenes Bor regelmäßig mechanisch abgelöst wird, so dass das abgelöste Bor in Pulverform in der Reaktionskammer (10;32) des Reaktors (8;9;30;42) vorliegt. Mit dem erfindungsgemäßen Verfahren wird hochreines amorphes Bor hergestellt, das ohne eine nachgeschaltete Zerkleinerung des gewonnenen Bors bereits eine sehr geringe Korngröße aufweist. Die Nutzung derartig hergestellten Borpulvers wird insbesondere für die Supraleiterherstellung im System Magnesium-Bor aufgrund der verbesserten Stromtragfähigkeit vorgeschlagen.
摘要翻译：本发明涉及一种生产高纯度的无定形硼，与还原气体和在反应室（10; 32）的气态卤化硼反应器（9; 8 30; 42）在操作期间被连续地或基本上连续地引入体，其中在反应室（10; 32）被提供，其支撑所述卤化硼硼的反应，其中所述反应器的表面上的（8; 9; 30; 42）具有催化剂的表面（37 15; 20;）催化剂（15; 20; 37）来沉积的硼被替换定期机械，从而使粉末形式的分离的硼进入反应室（10; 32）的反应器（8; 9; 30; 42）是否存在。利用本发明的方法的高纯度的无定形硼制备，其已经具有非常小的粒径，而不回收硼的随后粉碎。使用以这种方式产生的硼粉末的特别提出了一种用于生产在系统镁 - 硼超导体由于改善的电流承载能力。

7. 发明公开

EP2199258A1 A process for producing optionally doped elemental boron 失效转让
标题翻译： VERFAHREN ZUR HERSTELLUNG VON WAHLWEISE DOTIERTEM ELEMENTAREN BOR
公开(公告)号：EP2199258A1
公开(公告)日：2010-06-23
申请号：EP09180091.2
申请日：2009-12-21
申请人： CONSIGLIO NAZIONALE DELLE RICERCHE - INFM ISTITUTO NAZIONALE PER LA FISICA DELLA MATERIA , Siri, Antonio Sergio
发明人： Siri, Antonio Sergio , Vignolo, Maurizio
IPC分类号： C01B35/02 , C01B35/04 , B01J2/06 , C04B35/58
CPC分类号： C01B35/02 , C01B35/023 , C01B35/04 , C04B35/58057 , C04B2235/3232 , C04B2235/3813 , C04B2235/3821 , C04B2235/3826
摘要： A method for the production of elementary boron, in the amorphous state and/or optionally doped, is described by a method that involves the dissolution of an oxidized boron precursor, the cryogenic freezing of said solution and the subsequent lyophilisation, which follows a (chemical) reduction state. The described method allows the production of nanopowders of amorphous boron and provides the possibility of inserting homogeneously a doping element on the boron lattice sites and/or of the homogeneously dispersion of doping nanocompounds in the boron matrix.
摘要翻译：通过涉及溶解氧化硼前体，所述溶液的低温冷冻和随后的冻干的方法描述了以非晶状态和/或任选掺杂的方法生产基本硼的方法，该方法遵循（化学）还原状态。所描述的方法允许生产非晶态硼的纳米粉末，并且提供在硼晶格位置上均匀地插入掺杂元素和/或在硼基体中均匀分散掺杂纳米化合物的可能性。

8. 发明公开

EP0363743A2 Preparation of high purity boron 失效
标题翻译： Herstellung von Bor hoher Reinheit。
公开(公告)号：EP0363743A2
公开(公告)日：1990-04-18
申请号：EP89117963.2
申请日：1989-09-28
申请人： ETHYL CORPORATION
发明人： Allen, Robert Hall , Ibrahim, Jameel
IPC分类号： C01B35/02 , C30B15/04
CPC分类号： C01B35/023 , C30B15/04 , Y10T428/29 , Y10T428/2982
摘要： Electronic grade boron in the form of free-flowing, bead-like particles, and suitable for use in continuous and semi-continuous Czochralski systems for preparing doped, single crystal silicon, said particles having an average size within the range of from 500 to 700 microns, a size distribution of less than 100 - 150 microns, and a purity of at least 99.9995 percent.
A process for preparing it, comprising contacting in a fluidized bed, (a) boron seed particles having a size within the range of from 150 to 200 millimicrons with (b) a gas comprising a thermally decomposable boron hydride, such as diborane ou decaborane, said seed particles being above the decompostition temperature of said hydride, whereby deposition of boron on said seed particles takes place until said particles have grown to an average size within the range of from 500 to 700 microns.
摘要翻译：电子级硼形式为自由流动的珠状颗粒，适用于制备掺杂单晶硅的连续和半连续切克劳斯基系统，所述颗粒的平均尺寸范围为500至700 微米，尺寸分布小于100-150微米，纯度至少为99.9995％。一种制备方法，包括在流化床中接触（a）尺寸在150至200毫微米范围内的硼晶粒，（b）包含可热分解的硼氢化物的气体，例如十硼烷乙硼烷，所述种子颗粒高于所述氢化物的分解温度，由此在所述种子颗粒上沉积硼直到所述颗粒已经生长至在500至700微米范围内的平均尺寸。

9. 发明公开

EP0130311A3 Stable suspensions of boron, phosphorus, antimony and arsenic dopants 失效
标题翻译：硼，磷，抗氧化剂和稳定性悬浮剂的稳定悬浮液
公开(公告)号：EP0130311A3
公开(公告)日：1987-08-05
申请号：EP84105124
申请日：1984-05-07
申请人： ALLIED CORPORATION
发明人： Gupta, Arunava (NMI) , West, Gary Allen , Donlan, Jeffrey Peter
IPC分类号： C01B21/064 , C01B33/06 , C01B35/02 , H01L21/225 , B01J13/00
CPC分类号： C30B31/02 , H01L21/2225 , H01L21/2254 , H01L21/2257 , Y10S252/95 , Y10S252/951
摘要： Semiconductor doping compositions comprising a suspension of (a) a dopant material, in the form of finely divided spherical particles, such as P x Siy or B,Siy wherein x and y vary from 0.001 to 99.999 mole percent, (b) an effective amount of a thermally degradable polymeric organic binder such as polymethyl methacrylate; and (c) an amount of an organic solvent, such a cyclohexanone, sufficient to dissolve said polymeric organic binder, such as polymethylmethacrylate, and to disperse said dopant material are disclosed. Three onestep diffusion processes using the semiconductor doping compositions of the present invention for preparation of semiconductor materials having a wide range of sheet resistances and junction depths are also disclosed. The dopant materials selected for the semiconductor compositions of the present invention are less sensitive to moisture and chemical degradation and thereby afford greater processing latitude, are more reproducible and are less prone to create damage to and/or staining of the semiconductor substrate.

10. 发明公开

EP3936479A1 REDUCTION MATERIAL, COMPOSITE BODY AND REDUCTION METHOD 审中-公开
公开(公告)号：EP3936479A1
公开(公告)日：2022-01-12
申请号：EP20766248.7
申请日：2020-03-03
申请人： University of Tsukuba , Tokyo Institute of Technology
发明人： KONDO, Takahiro , FUJINO, Asahi , ISHIBIKI, Ryota , GOTO, Taiga , MIYAUCHI, Masahiro , KAWAMURA, Reiya , HIRABAYASHI, Toru , ITO, Shin-ichi
IPC分类号： C01B35/02 , B22F9/20 , B22F9/24 , B82Y30/00 , B82Y40/00 , C01B6/06
摘要： A reducing material including a two-dimensional hydrogen boride-containing sheet having a two-dimensional network composed of (BH) n (n ≥ 4).
A composite including a two-dimensional hydrogen boride-containing sheet having a two-dimensional network composed of (BH) n (n ≥ 4) and a metal nanoparticle.
A reduction method including: a step of dispersing the reducing material according to any one of Claims 1 to 5 in an organic solvent to prepare a dispersion liquid containing the reducing material; and a step of reducing a metal ion having a redox potential which is given as a standard electrode potential of -0.26 V/SHE or higher by mixing the dispersion liquid with the metal ion.

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