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1. 发明授权

EP2252550B1 PROCEDE DE RECYCLAGE DE SILANE (SiH4) 有权
标题翻译：方法进行回收利用硅烷（SiH4）
公开(公告)号：EP2252550B1
公开(公告)日：2013-05-08
申请号：EP09718657.1
申请日：2009-02-18
申请人： L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
发明人： BRIEND, Pierre , ALBAN, Bruno , CHEVREL, Henri , JAHAN, Denis
IPC分类号： C01B33/029 , C01B33/04 , C23C16/455
CPC分类号： C23C16/45593 , C01B33/043 , C01B33/046 , C23C16/24 , C23C16/4412

2. 发明授权

EP2036857B1 Method for producing trichlorosilane 有权
标题翻译：一种用于生产三氯氢硅的过程
公开(公告)号：EP2036857B1
公开(公告)日：2012-05-23
申请号：EP08015320.8
申请日：2008-08-29
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Shimizu, Takaaki , Oguro, Kyoji
IPC分类号： C01B33/107 , C23C16/24 , C23C16/44 , C23C16/455
CPC分类号： C01B33/1071 , C23C16/24 , C23C16/4412 , C23C16/45593

3. 发明授权

EP1489646B8 CVD APPARATUS AND METHOD OF CLEANING THE CVD APPARATUS 有权
标题翻译：化学气相淀积设备和方法清洁化学气相淀积设备的
公开(公告)号：EP1489646B8
公开(公告)日：2012-02-08
申请号：EP03715381.4
申请日：2003-03-19
申请人： National Institute of Advanced Industrial Science and Technology , ULVAC, Inc. , Kanto Denka Kogyo Co., Ltd. , Canon Anelva Corporation , Sanyo Electric Co., Ltd. , SHOWA DENKO K.K. , Sony Corporation , Tokyo Electron Limited , Panasonic Corporation , Hitachi Kokusai Electric Inc. , Mitsubishi Electric Corporation , Renesas Electronics Corporation
发明人： SAKAI, K., INST. INNOVATIVE TECH. FOR THE EARTH , OKURA, S., INST. OF INNOVATIVE TECH. FOR THE EARTH , SAKAMURA, M., INST.OF INNOVATIVETECH FOR THE EARTH , ABE, K., INST. OF INNOVATIVE TECH FOR THE EARTH , MURATA, H., INST. OF INNOVATIVE TECH FOR THE EARTH , WANI, E., INST. OF INNOVATIVE TECH. FOR THE EARTH , KAMEDA, K., INST. OF INNOVATIVE TECH.FOR THE EARTH , MITSUI, Y., INST.OF INNOVATIVETECH. FOR THE EARTH , OHIRA, Y., INST.OF INNOVATIVIVE TECH.FOR THE EARTH , YONEMURA, T., INST.OF INNOVATIVE TECH.FOR THE EART , SEKIYA, A., INST. ADVANCED IND. SCIENCE & TECH.
IPC分类号： H01L21/205 , H01L21/31 , C23C16/44
CPC分类号： C23C16/45593 , C23C16/4405 , C23C16/4412 , H01L21/02046 , Y02C20/30 , Y02P70/605
摘要： A method of cleaning a CVD apparatus that enables efficiently removing by-products, such as SiO2 and Si3N4, having stuck to and deposited on the surfaces of inside wall, electrode, etc. of a reaction chamber during the operation of film formation, and that minimizes the volume of cleaning gas discharged so as to decrease influences on global warming and other environmental matter, thereby enabling cost reduction. A CVD apparatus adapted to feed reaction gas into a reaction chamber so as to form a deposit film on a surface of substrate disposed in the reaction chamber, wherein an exhaust path for discharging exhaust gas from the inside of the reaction chamber by means of a pump is fitted with an exhaust gas reflux path for refluxing exhaust gas from a downstream side of the pump to the reaction chamber.

4. 发明公开

EP2345751A1 Plasma film forming apparatus 有权
标题翻译： Vorrichtung zur Plasmafilmbildung
公开(公告)号：EP2345751A1
公开(公告)日：2011-07-20
申请号：EP11150804.0
申请日：2011-01-13
申请人： Honda Motor Co., Ltd.
发明人： Yorozuya, Shunichi
IPC分类号： C23C16/50 , C23C16/52 , C23C16/455
CPC分类号： C23C16/45512 , C23C16/45517 , C23C16/45563 , C23C16/45587 , C23C16/45593 , C23C16/50 , C23C16/52
摘要： The present invention relates to a plasma film forming apparatus. In the plasma film forming apparatus, a flow control jig (14) is disposed between a plasma nozzle (16) and a film formation region (12) of a substrate (10). The flow control jig (14) has a plasma supply path (20), a raw material supply path (22), a film formation joined path (24) formed by combining the plasma supply path (20) and the raw material supply path (22), an exhaust path (26) for discharging a plasma discharge gas and an unreacted raw material transported from the film formation region (12), and a recovery path (28) for returning the unreacted raw material in the exhaust path (26) to the plasma supply path (20).
摘要翻译：等离子体成膜装置技术领域本发明涉及等离子体成膜装置。在等离子体成膜装置中，在等离子体喷嘴（16）和基板（10）的成膜区域（12）之间设置流量控制夹具（14）。流量控制夹具（14）具有等离子体供给路径（20），原料供给路径（22），通过组合等离子体供给路径（20）和原料供给路径（ 22），用于排出等离子体放电气体的排气路径（26）和从成膜区域（12）输送的未反应原料，以及用于使排气路径（26）中的未反应原料返回的回收路径（28）到等离子体供给路径（20）。

5. 发明授权

EP2045373B1 EPITAXIAL REACTOR FOR THE LARGE-SCALE PRODUCTION OF WAFERS 有权
标题翻译：外延反应器的晶片批量生产
公开(公告)号：EP2045373B1
公开(公告)日：2010-10-27
申请号：EP06794026.2
申请日：2006-06-15
申请人： UNIVERSIDAD POLITECNICA DE MADRID
发明人： LUQUE LOPEZ, Antonio, Avda. Complutense, S/N , ZAMORANO SAAVEDRA, J.C., Avda. Complutense, S/N , TOBIAS GALICIA, Ignacio, Avda. Complutense, S/N , RODRIGUEZ SAN SEGUNDO,H.J., Avda. Complutense S/N
IPC分类号： C30B25/12 , C30B25/02 , C30B25/08 , C30B25/14
CPC分类号： C30B25/02 , C23C16/45504 , C23C16/45593 , C30B25/08 , C30B25/12 , C30B25/14 , C30B35/00 , H01L21/68757 , H01L21/68771 , H01L21/68785 , H01L31/18
摘要： The invention relates to an epitaxial reactor for the large-scale production of wafers, which comprises a high-performance system for use in the photovoltaic industry. The main innovation of the invention lies in the high susceptor stack density, said susceptors being separated from one another by 4 cm. According to the invention, the susceptors are positioned vertically parallel to one another, interconnected and heated by the Joule effect. The current arrives through specially-designed bushings which connect the exterior (ambient temperature) with the susceptors (1000 °C). A gas flows between the susceptors. In addition, substrates are positioned on the susceptors and an antechamber is disposed therebelow in order to distribute the inlet gas uniformly and to eliminate turbulence. The aforementioned assembly is disposed in a stainless steel chamber which is coated internally with a reflective material and which is cooled externally with water. The susceptors and the antechamber are fixed to a rear connection panel which also contains electrical bushings, thermocouple bushings and a gas inlet and outlet. The outlet gases are partially recirculated, thereby saving gas and increasing efficiency.

6. 发明公开

EP2239353A1 Photovoltaic cell deposition with minimized gas usage 审中-公开
标题翻译： Ablagerung photovoltaischer Zellen mit minimiertem Gasaufwand
公开(公告)号：EP2239353A1
公开(公告)日：2010-10-13
申请号：EP09157458.2
申请日：2009-04-07
申请人： L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
发明人： Chevrel, Henri
IPC分类号： C23C16/24
CPC分类号： C23C16/4412 , C23C16/24 , C23C16/45593 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for recovering and recycling silane and/or argon from a deposition chamber (6) used in a silicon layer deposition process using an argon dilution of silane, comprising at least the steps:
step a): collecting the silane and/or argon mixture exiting from the deposition chamber (6); and
step b): recycling the collected silane and/or argon to the deposition chamber (6).
摘要翻译：一种用于从硅沉积工艺中使用的淀积室（6）回收和再循环硅烷和/或氩的方法，所述硅层沉积工艺使用硅烷的氩稀释，至少包括以下步骤：步骤a）：收集硅烷和/或氩气混合物从沉积室（6）排出; 和步骤b）：将收集的硅烷和/或氩循环到沉积室（6）。

7. 发明公开

EP2036857A3 Method for producing trichlorosilane 有权
标题翻译：一种用于生产三氯氢硅的过程
公开(公告)号：EP2036857A3
公开(公告)日：2009-05-13
申请号：EP08015320.8
申请日：2008-08-29
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Shimizu, Takaaki , Oguro, Kyoji
IPC分类号： C01B33/107 , C23C16/24 , C23C16/44 , C23C16/455
CPC分类号： C01B33/1071 , C23C16/24 , C23C16/4412 , C23C16/45593
摘要： A by-product mixture produced in a process for producing polycrystalline silicon (101) is made to react with chlorine to form tetrachlorosilane (STC) distillate in a chlorination reaction vessel (102), and the tetrachlorosilane (STC) distillate is made to react with hydrogen in a hydrogenation reaction vessel (103) to be converted into trichlorosilane (TCS). In the chlorination step, methyl chlorosilanes having boiling points close to TCS are hyper-chlorinated to be converted into hyper-chlorinated methyl chlorosilanes having higher boiling points, which facilitates the hyper-chlorinated methyl chlorosilanes to be separated into high concentration, and inhibits carbon from contaminating the polycrystalline silicon. A donor/acceptor eliminator (104) is provided in the circulation cycle for producing TCS, and accordingly there is no need to take out a by-product produced in the process for producing TCS to the outside of the system, which can highly purify the TCS.

8. 发明公开

EP2036859A2 Method for producing polycrystalline silicon 有权
标题翻译： Verfahren zur Herstellung von Polykristallinem Silizium
公开(公告)号：EP2036859A2
公开(公告)日：2009-03-18
申请号：EP08163277.0
申请日：2008-08-29
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Shimizu, Takaaki c/o Shin-Etsu Chemicals Co., Ltd. , Oguro, Kyoji c/o Shin-Etsu Chemicals Co., Ltd. , Aoyama, Takeshi c/o Shin-Etsu Chemicals Co., Ltd.
IPC分类号： C01B33/107 , C23C16/24 , C30B29/06 , C01B33/03
CPC分类号： C23C16/24 , C01B33/03 , C01B33/1071 , C01B33/10721 , C23C16/4412 , C23C16/45593
摘要： A by-product mixture produced when polycrystalline silicon is deposited on a base material in a CVD reactor (101) is made to react with chlorine to form a tetrachlorosilane (STC) effluent in a chlorination reaction vessel (102), and the tetrachlorosilane (STC) distillate is made to react with hydrogen in a hydrogenation reaction vessel (103) to be converted into trichlorosilane (TCS). In the chlorination step, polysilane contained in the above described by-product mixture can be efficiently recycled as a raw material for producing the polycrystalline silicon, which can enhance a yield of the production process. In addition, in the chlorination step, methyl chlorosilanes having boiling points close to TCS are hyper-chlorinated to be converted into hyper-chlorinated methyl chlorosilanes having higher boiling points, which facilitates the hyper-chlorinated methyl chlorosilanes to be separated into high concentration, and reduces carbon contamination of the polycrystalline silicon.
摘要翻译：使多晶硅沉积在CVD反应器（101）中的基材上时产生的副产物混合物与氯反应，在氯化反应容器（102）中形成四氯硅烷（STC）流出物，四氯硅烷（STC ）馏出物在氢化反应容器（103）中与氢反应，转化为三氯硅烷（TCS）。在氯化工序中，上述副产物混合物中所含的聚硅烷可以作为制造多晶硅的原料被有效地再循环，从而提高生产工艺的产率。此外，在氯化工序中，沸点接近TCS的甲基氯硅烷被高氯化转化为沸点较高的高氯甲基氯硅烷，有利于将高氯甲基氯硅烷分离成高浓度，减少多晶硅的碳污染。

9. 发明公开

EP1857411A1 modified CVD cooling loop 有权
标题翻译： Modifizierte CVD-Kühlungsschleife
公开(公告)号：EP1857411A1
公开(公告)日：2007-11-21
申请号：EP07252021.6
申请日：2007-05-17
申请人： Honeywell International Inc.
发明人： Cress, James Jay , Conn, Mark D. , Deneve, Michael J. , Stutsman, Michael J.
IPC分类号： C01B31/00 , C23C16/00 , F16D69/02
CPC分类号： C23C16/045 , C23C16/4412 , C23C16/45593 , F16D69/023 , F16D2200/0047
摘要： Method of increasing the density of carbon-carbon composite parts. The method may include consecutive steps, as follows: providing the carbon-carbon composite parts, e.g. aircraft brake disc preforms; subjecting the carbon-carbon composite parts to chemical vapor deposition in a CVD furnace; forcing cooling air through the CVD furnace; passing the resulting warmed through a tar trap; cooling the resulting purified, warmed air; repeating the air cooling cycle; and, finally, removing the resulting densified carbon-carbon composite parts from the CVD furnace.
摘要翻译：增加碳 - 碳复合材料部件密度的方法。该方法可以包括如下的连续步骤：提供碳 - 碳复合部件，例如，飞机制动盘预制件; 使碳 - 碳复合部件在CVD炉中进行化学气相沉积; 迫使冷却空气通过CVD炉; 通过一个焦油收集器，冷却所得净化的温热空气; 重复空气冷却循环; 最后，从CVD炉中除去生成的致密碳 - 碳复合材料。

10. 发明公开

EP1824960A2 SUBSTRATE PROCESSING APPARATUS USING A BATCH PROCESSING CHAMBER 审中-公开
标题翻译：与批处理腔片处理设备
公开(公告)号：EP1824960A2
公开(公告)日：2007-08-29
申请号：EP05825425.1
申请日：2005-11-22
申请人： Applied Materials, Inc.
发明人： THAKUR, Randhir, P.s. , GHANAYEM, Steve, G. , YUDOVSKY, Joseph , WEBB, Aaron , BRAILOVE, Adam, A. , MERRY, Nir , SHAH, Vinay, K. , HEGEDUS, Andreas, G.
IPC分类号： C12M3/00
CPC分类号： H01L21/67109 , C23C16/4412 , C23C16/45546 , C23C16/45593 , C23C16/4584 , C23C16/481 , C23C16/54 , H01L21/67017 , H01L21/67115 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/67745 , H01L21/67757 , H01L21/67781
摘要： Aspects of the invention include a method and apparatus for processing a substrate using a multi-chamber processing system (e.g., a cluster tool) adapted to process substrates in one or more batch and/or single substrate processing chambers to increase the system throughput. In one embodiment, a system is configured to perform a substrate processing sequence that contains batch processing chambers only, or batch and single substrate processing chambers, to optimize throughput and minimize processing defects due to exposure to a contaminating environment. In one embodiment, a batch processing chamber is used to increase the system throughput by performing a process recipe step that is disproportionately long compared to other process recipe steps in the substrate processing sequence that are performed on the cluster tool. In another embodiment, two or more batch chambers are used to process multiple substrates using one or more of the disproportionately long processing steps in a processing sequence. Aspects of the invention also include an apparatus and method for delivering a precursor to a processing chamber so that a repeatable ALD or CVD deposition process can be performed.

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