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1. 发明公开

EP4452847A1 VERFAHREN ZUR HERSTELLUNG VON SILICIUM-ENTHALTENDEN MATERIALIEN IN EINEM RÜHRKESSELREAKTOR 失效
公开(公告)号：EP4452847A1
公开(公告)日：2024-10-30
申请号：EP21830441.8
申请日：2021-12-20
申请人： Wacker Chemie AG
发明人： DRÄGER, Christoph , BECKER, Moritz , FRICKE, Michael , KALYAKINA, Alena , KLEINLEIN, Claudia , KNEISSL, Sebastian , SUCKOW, Sebastian , TILLMANN, Jan
IPC分类号： C01B33/021 , C23C16/24 , C23C16/44 , H01M4/134
CPC分类号： C23C16/24 , C23C16/4417 , H01M4/134 , C23C16/045 , C01B33/029 , H01M4/386 , H01M4/366 , Y02E60/10

2. 发明公开

EP4436941A1 PROCEDE DE REVETEMENT 审中-实审
公开(公告)号：EP4436941A1
公开(公告)日：2024-10-02
申请号：EP22829785.9
申请日：2022-11-21
申请人： Safran Ceramics
发明人： BOUILLON, Eric , PIN, Lisa , ARNAL, Simon , COSSOU, Benjamin
IPC分类号： C04B41/52 , C04B41/00 , C04B41/89 , C23C16/24 , F01D5/28
CPC分类号： C04B41/89 , C04B41/009 , C04B41/52 , C23C16/24 , F01D5/288 , F05D2230/31420130101 , F05D2300/603320130101 , F05D2230/9020130101

3. 发明公开

EP4396393A1 SILICON PRECURSOR MATERIALS, SILICON-CONTAINING FILMS, AND RELATED METHODS 审中-实审
公开(公告)号：EP4396393A1
公开(公告)日：2024-07-10
申请号：EP22865251.7
申请日：2022-07-07
申请人： Entegris, Inc.
发明人： KIM, YoonHae , CHO, Sungsil , KIM, HwanSoo , PARK, KieJin
IPC分类号： C23C16/30 , C23C16/24 , C23C16/455 , C07F7/10 , C07F7/02
CPC分类号： C01B33/027 , C01B33/08 , C07F7/10 , C07F7/0838 , C23C16/401 , C23C16/345

4. 发明公开

EP4334491A2 ENVIRONMENTAL BARRIER COATING AND METHOD OF FORMING THE SAME 审中-实审
公开(公告)号：EP4334491A2
公开(公告)日：2024-03-13
申请号：EP22805182.7
申请日：2022-05-09
申请人： RTX Corporation
发明人： BEALS, James T. , JACKSON, Richard Wesley , TANG, Xia
IPC分类号： C23C16/24 , C23C16/22 , F01D5/28 , F01D5/12 , C04B41/81 , C04B41/80

5. 发明公开

EP4318611A1 SOLAR CELL PANEL, CELL PIECE AND PRODUCTION PROCESS FOR CELL PIECE 审中-实审
公开(公告)号：EP4318611A1
公开(公告)日：2024-02-07
申请号：EP22913564.5
申请日：2022-09-23
申请人： Tongwei Solar (Meishan) Co., Ltd.
发明人： XU, Wenzhou , MENG, Xiajie , YAO, Qian , WANG, Xiupeng , XING, Guoqiang
IPC分类号： H01L31/18 , H01L31/0216 , C23C16/24
摘要： The present application relates to a solar cell panel, a cell piece and a production process for a cell piece. A silicon oxide layer (200) is formed on the back surface of an N-type silicon wafer (100); an N-type silicon layer (300) is formed on the silicon oxide layer (200), wherein the phosphine concentration of the N-type silicon layer (300) is within a first preset concentration range; and an antireflection layer (400) is formed on the N-type silicon layer (300) and a back electrode (500) is formed on the antireflection layer (400). In the high-temperature annealing process, hydrogen atoms can be bound by phosphine, such that membrane explosion caused by the escape of hydrogen atoms is avoided, an open-circuit voltage, the conversion efficiency and a filling factor can be improved, a back passivation effect can be enhanced, and the quality of a cell piece can be improved.

6. 发明公开

EP4232409A1 PROCESS FOR PREPARING SILICON-CONTAINING COMPOSITE PARTICLES 审中-实审转让
公开(公告)号：EP4232409A1
公开(公告)日：2023-08-30
申请号：EP21799014.2
申请日：2021-10-22
申请人： Wacker Chemie AG , Nexeon Limited
发明人： TILLMANN, Jan , DRÄGER, Christoph , KALYAKINA, Alena , KNEISSL, Sebastian , RENNER, Thomas , TAYLOR, Richard Gregory , MEDRANO-CATALAN, José , ANDERSSON, Markus , MASON, Charles A. , WHITTAM, Joshua
IPC分类号： C01B33/021 , C23C16/24 , H01M4/134

7. 发明公开

EP4174209A1 METHOD OF FORMING A DOPED POLYSILICON LAYER 审中-实审
公开(公告)号：EP4174209A1
公开(公告)日：2023-05-03
申请号：EP22203309.4
申请日：2022-10-24
申请人： ASM IP Holding B.V.
发明人： VAN AERDE, Steven R. A. , SU, Juan
IPC分类号： C23C16/24 , C23C16/455 , C23C16/56 , H01L21/02
摘要： A method and a wafer processing furnace for forming a doped polysilicon layer on a plurality of substrates is provided. In a preferred embodiment, the method comprises providing a plurality of substrates to a process chamber. It also comprises executing a deposition cycle comprising providing a silicon-containing precursor to the process chamber thereby depositing, on the plurality of substrates, an undoped silicon layer until a pre-determined thickness is reached and providing the process chamber with a flow of a dopant precursor gas without providing the silicon-containing precursor to the process chamber. The method also comprises performing a heat treatment process, thereby forming the doped polysilicon layer.

8. 发明公开

EP4094828A1 PLASMA SURFACE TREATMENT APPARATUS FOR CONDUCTIVE POWDER 审中-实审
公开(公告)号：EP4094828A1
公开(公告)日：2022-11-30
申请号：EP21744361.3
申请日：2021-01-22
申请人： Korea Institute of Fusion Energy
发明人： YOO, Seung Ryul , CHOI, Yong Sup , JUNG, Yong Ho , SEOK, Dong Chan , LEE, Kang Il
IPC分类号： B01J19/08 , B01J2/00 , C23C16/24 , C23C16/44 , C23C16/513 , C01B32/21
摘要： Disclosed is a plasma surface treatment apparatus for conductive powder. The plasma surface treatment apparatus for conductive powder comprises: a reaction chamber including a linear gas inlet at the lower end thereof and a gas outlet at the upper end thereof, and having a vertical cross section that is funnel-shaped; and a plasma jet generation device that is located below the linear gas inlet and is configured to discharge a plasma jet into the reaction chamber from below in an upward direction through the linear gas inlet, wherein powder is accommodated in the reaction chamber and is treated by plasma while buoyed by the plasma jet.

9. 发明公开

EP4092154A1 PROCESSES FOR DEPOSITING SILICON-CONTAINING FILMS USING SAME 审中-实审
公开(公告)号：EP4092154A1
公开(公告)日：2022-11-23
申请号：EP22176702.3
申请日：2016-06-14
申请人： Versum Materials US, LLC
发明人： LEI, Xinjian , LI, Jianheng , LEHMANN, John Francis , COOPER, Alan Charles
IPC分类号： C23C16/455 , C23C14/10 , C23C14/06 , C23C16/24 , C23C16/34 , C23C16/40 , C23C16/36 , C07F7/02 , H01L21/02 , H01L21/3205
摘要： Halidosilane compounds, processes for synthesizing halidosilane compounds, compositions comprising halidosilane precursors, and processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS). Also described herein are methods for depositing silicon containing films such as, without limitation, silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films, at one or more deposition temperatures of about 500°C or less.

10. 发明公开

EP3985147A1 A METHOD OF PRODUCING A TWO-DIMENSIONAL MATERIAL 审中-公开
公开(公告)号：EP3985147A1
公开(公告)日：2022-04-20
申请号：EP21206535.3
申请日：2016-07-01
申请人： Paragraf Limited
发明人： THOMAS, Simon Charles Stewart
IPC分类号： C30B25/10 , C30B25/16 , C30B29/02 , C30B29/60 , C01B32/186 , C23C16/26 , C23C16/24 , C30B29/06 , C23C16/455
摘要： A method of producing a two-dimensional crystalline material, the method comprising: providing a substrate having nucleation sites within a reaction chamber; introducing at a precursor entry point a precursor into the reaction chamber, the precursor being in a gas phase and/or suspended in a gas; heating the substrate to a temperature that is within a decomposition range of the precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; and cooling the precursor entry point; wherein the reaction chamber is a close coupled reaction chamber such that a separation between the substrate surface upon which the two-dimensional crystalline material is formed and the point at which the precursor enters the reaction chamber is sufficiently small, and a thermal gradient between the substrate surface and the point at which the precursor enters the chamber is sufficiently steep, such that the fraction of precursor that reacts in the gas phase within the reaction chamber is low enough to allow the formation of the two-dimensional crystalline material, wherein the distance between the surface of the substrate upon which the two-dimensional crystalline material is produced and the point at which precursor enters the chamber is less than 100mm; and wherein the two-dimensional crystalline material is graphene and the species is carbon or wherein the two-dimensional crystalline material is silicene and the species is silicon; and wherein the substrate provides a non-metallic surface upon which the two-dimensional crystalline material is produced.

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