
基本信息:
- 专利标题: Method for producing polycrystalline silicon
- 专利标题(中):Verfahren zur Herstellung von Polykristallinem Silizium
- 申请号:EP08163277.0 申请日:2008-08-29
- 公开(公告)号:EP2036859A2 公开(公告)日:2009-03-18
- 发明人: Shimizu, Takaaki c/o Shin-Etsu Chemicals Co., Ltd. , Oguro, Kyoji c/o Shin-Etsu Chemicals Co., Ltd. , Aoyama, Takeshi c/o Shin-Etsu Chemicals Co., Ltd.
- 申请人: Shin-Etsu Chemical Co., Ltd.
- 申请人地址: 6-1, Ohtemachi 2-chome Chiyoda-ku Tokyo 100-0004 JP
- 专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址: 6-1, Ohtemachi 2-chome Chiyoda-ku Tokyo 100-0004 JP
- 代理机构: HOFFMANN EITLE
- 优先权: JP2007229856 20070905
- 主分类号: C01B33/107
- IPC分类号: C01B33/107 ; C23C16/24 ; C30B29/06 ; C01B33/03
摘要:
A by-product mixture produced when polycrystalline silicon is deposited on a base material in a CVD reactor (101) is made to react with chlorine to form a tetrachlorosilane (STC) effluent in a chlorination reaction vessel (102), and the tetrachlorosilane (STC) distillate is made to react with hydrogen in a hydrogenation reaction vessel (103) to be converted into trichlorosilane (TCS). In the chlorination step, polysilane contained in the above described by-product mixture can be efficiently recycled as a raw material for producing the polycrystalline silicon, which can enhance a yield of the production process. In addition, in the chlorination step, methyl chlorosilanes having boiling points close to TCS are hyper-chlorinated to be converted into hyper-chlorinated methyl chlorosilanes having higher boiling points, which facilitates the hyper-chlorinated methyl chlorosilanes to be separated into high concentration, and reduces carbon contamination of the polycrystalline silicon.
摘要(中):
使多晶硅沉积在CVD反应器(101)中的基材上时产生的副产物混合物与氯反应,在氯化反应容器(102)中形成四氯硅烷(STC)流出物,四氯硅烷(STC )馏出物在氢化反应容器(103)中与氢反应,转化为三氯硅烷(TCS)。 在氯化工序中,上述副产物混合物中所含的聚硅烷可以作为制造多晶硅的原料被有效地再循环,从而提高生产工艺的产率。 此外,在氯化工序中,沸点接近TCS的甲基氯硅烷被高氯化转化为沸点较高的高氯甲基氯硅烷,有利于将高氯甲基氯硅烷分离成高浓度, 减少多晶硅的碳污染。
公开/授权文献:
- EP2036859B1 Method for producing polycrystalline silicon 公开/授权日:2012-08-22