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1. 发明公开

EP4365328A1 SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND USE OF SUBSTRATE PROCESSING APPARATUS 审中-实审
公开(公告)号：EP4365328A1
公开(公告)日：2024-05-08
申请号：EP23201872.1
申请日：2023-10-05
申请人： Kokusai Electric Corp.
发明人： URUSHIHARA, Mika , HIRANO, Atsushi , SASAKI, Takafumi
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , H01L21/02
CPC分类号： C23C16/45578 , C23C16/45546 , C23C16/4412 , H01L21/0262 , C23C16/345 , H01L21/0217 , H01L21/02211 , H01L21/0228
摘要： There is provided a technique that includes (a) a process chamber (201) configured to accommodate a plurality of substrates (200) arranged vertically, provided with a product region (P) and a dummy region (TSD, BSD) and including a main exhauster (236) on a lateral side thereof, (b) a first injector (340a, 340b, 341a, 341b) extending vertically within the process chamber (201) on an opposite side from the main exhauster(236), and configured to supply a first precursor toward the substrates (200) accommodated in the product region (P) and the dummy region (TSD, BSD), (c) at least one selected from the group of a second injector (342c2) and a third injector (343a1, 343a2), wherein the second injector (342c2) supplies an assist gas for diluting the first precursor toward substrates (200) and the third injector (343a1, 343a2) supplies an inert gas toward the substrates (200) accommodated in the product region (P) and the substrates (200) accommodated in the dummy region (TSD, BSD); and (d) a fourth injector (343b) configured to supply an inert gas only to the dummy region (TSD, BSD).

2. 发明授权

EP2286006B1 METHODS AND APPARATUS FOR DEPOSITION REACTORS 有权
标题翻译：方法和装置分离REACTORS
公开(公告)号：EP2286006B1
公开(公告)日：2016-05-18
申请号：EP09754024.9
申请日：2009-05-25
申请人： Picosun Oy
发明人： LINDFORS, Sven
IPC分类号： C30B25/14 , C23C16/40 , C23C16/455 , C30B25/16 , C30B29/20
CPC分类号： C23C16/403 , C23C16/45504 , C23C16/45546 , C30B25/165 , C30B29/20

3. 发明公开

EP2628822A1 Current insulated bearing components and bearings 有权转让
标题翻译： Stromisolierende Lagerkomponenten und Lager
公开(公告)号：EP2628822A1
公开(公告)日：2013-08-21
申请号：EP12000975.8
申请日：2012-02-15
申请人： Hauzer Techno Coating BV , Schaeffler AG , Picosun Oy
发明人： Kolev, Ivan, Dr. , Peeters, Paul, Dr. , Tap, Roland, Dr. , Haag, Bertram , Musayev, Yashar, Dr. , Kursawe, Serge, Dr. , Hosenfeldt, Tim Matthias, Dr. , Gierl, Jürgen, Dr. , Kostamo, Juhana
IPC分类号： C23C16/455
CPC分类号： F16C33/02 , C23C16/45546 , C23C16/45555 , C23C16/50 , F16C33/043 , F16C33/32 , F16C33/34 , F16C33/38 , F16C33/445 , F16C33/46 , F16C33/565 , F16C33/62 , F16C33/64 , F16C41/008 , F16C2202/30 , F16C2206/04 , F16C2206/44 , F16C2223/60 , F16C2240/60 , F16C2240/64 , F16C2380/26
摘要： A bearing component of a linear bearing of a rolling element bearing and a sliding bearing, for example a component selected from the group comprising a bearing race, a rolling element such as a tapered roller, a barrel roller, a needle roller, a bearing ball and a rolling element cage, the bearing component having at least one layer having a high hardness and a high current insulation property applied by a PVD (physical vapor deposition) process, by a CVD (chemical vapor deposition) process, or by. a PECVD (plasma enhanced chemical vapor deposition) process at at least one surface region of said article, said at least one layer comprising a nonconductive oxide layer selected from the group comprising an Al 2 O 3 layer, a TaO layer, an SiO2 layer, a mixed layer comprising two or more of the foregoing oxides, a multilayer structure comprising alternating layers of two or more of the foregoing oxides and a DLC layer such as a ta-C layer, there being at least one ALD layer comprising at least one layer of a material deposited by an ALD (atomic layer deposition) process on said at least one layer having a high hardness and a high current insulation property, the ALD layer itself having a high current insulation property and comprising a material or layer structure selected from the said group of materials.
摘要翻译：滚动体轴承和滑动轴承的直线轴承的轴承部件，例如选自包括轴承座，滚动元件如圆锥滚子，滚筒滚针，滚针，滚动轴承和滚动体保持架，所述轴承部件具有通过CVD（化学气相沉积）工艺或通过PVD（物理气相沉积）工艺施加的具有高硬度和高电流绝缘性的至少一层。在所述制品的至少一个表面区域处的PECVD（等离子体增强化学气相沉积）工艺，所述至少一个层包括非导电氧化物层，其选自包括Al 2 O 3层，TaO层，SiO 2层，包含两种或更多种前述氧化物的混合层，包含两种或更多种前述氧化物的交替层和多层陶瓷层如Ta-C层的多层结构，其中至少一层ALD层包含至少一层通过ALD（原子层沉积）工艺沉积在具有高硬度和高电流绝缘性能的所述至少一层上的材料，所述ALD层本身具有高电流绝缘性能并且包括选自以下的材料或层结构：说组的材料。

4. 发明公开

EP2462256A1 APPARATUS 审中-公开
标题翻译：仪器
公开(公告)号：EP2462256A1
公开(公告)日：2012-06-13
申请号：EP10744971.2
申请日：2010-06-14
申请人： Beneq Oy
发明人： SOININEN, Pekka , SKARP, Jarmo
IPC分类号： C23C16/54 , H01L21/00
CPC分类号： C23C16/54 , C23C16/45546 , H01L21/6719 , H01L21/67207
摘要： The invention relates to an apparatus (1) for carrying out atomic layer deposition onto a surface of a substrate by exposing the surface of the substrate (11) to alternate starting material surface reactions, the apparatus comprising two or more low-pressure chambers (2), two or more separate reaction chambers (8, 12) arranged to be placed inside the low-pressure chambers (2), and at least one starting material feed system (5) common to two or more low-pressure chambers (2) for carrying out atomic layer deposition. According to the invention, the apparatus comprises at least one loading device (6, 16) arranged to load and unload substrates (11) to/from the reaction chamber (8, 12) and further to load and unload the reaction chambers (8, 12) to/from the low-pressure chambers (2).
摘要翻译：本发明涉及一种用于通过将衬底（11）的表面暴露于交替的起始材料表面反应来执行原子层沉积到衬底表面上的设备（1），该设备包括两个或更多个低压室（2 ），布置成放置在低压室（2）内的两个或更多个单独的反应室（8,12）以及两个或更多个低压室（2）共用的至少一个原料进料系统（5）进行原子层沉积。根据本发明，所述设备包括至少一个加载装置（6,16），所述加载装置布置成将基板（11）装载到反应室（8,12）以及从反应室（8,12）卸载并进一步装载和卸载反应室（8,8） 12）到/从低压室（2）。

5. 发明授权

EP1394844B1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：EP1394844B1
公开(公告)日：2009-01-21
申请号：EP02730853.5
申请日：2002-05-31
申请人： TOKYO ELECTRON LIMITED
发明人： YOKOYAMA, Shin , NAKAJIMA, Anri , TADA, Yoshihide, TOKYO ELECTRON LIMITED , NAKAMURA, Genji, TOKYO ELECTRON LIMITED , IMAI, Masayuki , YONEKAWA, Tsukasa, TOKYO ELECTRON TOHOKU LIMITED
IPC分类号： H01L21/318 , C23C16/30
CPC分类号： H01L21/3185 , B82Y10/00 , B82Y30/00 , C23C16/30 , C23C16/345 , C23C16/45546 , C23C16/56 , H01L21/3144 , H01L21/3145 , H01L21/31612 , H01L21/31662 , H01L21/3211 , Y10S438/909
摘要： A method of fabricating a semiconductor device, capable of improving the in-plane uniformity of a silicon nitride film or a silicon oxynitride film to be formed, and increasing a production efficiency at the film forming. The method comprises the steps of forming on a silicon substrate a first film consisting of a silicon oxide film or a silicon oxynitride film, forming a second film consisting of one tetrachlorosilane monomolecular layer, and nitriding the second film to form a third film consisting of one silicon nitride monomolecular layer. The second film forming step and the third film forming steps are repeated specified number of times to form a silicon nitride film of a specified film thickness. A fabrication device comprises a plurality of silicon substrates disposed on shelf-shaped wafer ports, a process gas being supplied toward above a reaction pipe from a process gas supply pipe.
摘要翻译：一种制造半导体器件的方法，其能够改善待形成的氮化硅膜或氧氮化硅膜的面内均匀性，并提高成膜时的生产效率。该方法包括以下步骤：在硅衬底上形成由氧化硅膜或氮氧化硅膜组成的第一膜，形成由一个四氯硅烷单分子层组成的第二膜，以及氮化第二膜以形成由一个氮化硅单分子层。重复第二成膜步骤和第三成膜步骤规定次数以形成特定膜厚的氮化硅膜。一种制造装置包括设置在架状晶片端口上的多个硅衬底，工艺气体从工艺气体供应管朝向反应管上方供应。

6. 发明公开

EP1660698A1 MICROFEATURE WORKPIECE PROCESSING APPARATUS AND METHODS FOR BATCH DEPOSITION OF MATERIALS ON MICROFEATURE WORKPIECES 有权
标题翻译：处理装置用于微结构特征具有分离材料对微观结构的特征是包含WORKPIECES充电模式组件和方法
公开(公告)号：EP1660698A1
公开(公告)日：2006-05-31
申请号：EP04781653.3
申请日：2004-08-18
申请人： MICRON TECHNOLOGY, INC.
发明人： ZHENG, Lingyi, A. , DOAN, Trung, T. , BREINER, Lyle, D. , PING, Er-Xuan , WEIMER, Ronald, A. , KUBISTA, David, J. , BEAMAN, Kevin, L. , BASCERI, Cem
IPC分类号： C23C16/458
CPC分类号： C23C16/4583 , C23C16/45546 , C23C16/45578 , Y10S206/832
摘要： The present disclosure describes apparatus and methods for processing microfeature workpieces, e.g., by depositing material on a microelectronic semiconductor using atomic layer deposition. Some of these apparatus include microfeature workpiece holders that include gas distributors. One exemplary implementation provides a microfeature workpiece holder adapted to hold a plurality of microfeature workpieces. This workpiece holder includes a plurality of workpiece supports and a gas distributor. The workpiece supports are adapted to support a plurality of microfeature workpieces in a spaced-apart relationship to define a process space adjacent a surface of each microfeature workpiece. The gas distributor includes an inlet and a plurality of outlets, with each of the outlets positioned to direct a flow of process gas into one of the process spaces.

7. 发明公开

EP1159465A4 PROCESSING CHAMBER FOR ATOMIC LAYER DEPOSITION PROCESSES 有权
标题翻译： BEHANDLUNGSKAMMERFÜRBESCHICHTUNGSVERFAHREN VON ATOMSCHICHTEN
公开(公告)号：EP1159465A4
公开(公告)日：2005-05-04
申请号：EP99967400
申请日：1999-12-16
申请人： GENUS INC
发明人： DOERING KENNETH , GALEWSKI CARL J , GADGIL PRASAD N , SEIDEL THOMAS E
IPC分类号： B01J19/00 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/54 , C30B25/12 , C30B25/14 , H01J37/32 , H01L21/00 , H01L21/205 , C23C16/00 , H05B3/06
CPC分类号： C30B25/14 , C23C16/44 , C23C16/4412 , C23C16/45544 , C23C16/45546 , C23C16/4583 , C23C16/46 , C23C16/54 , C30B25/12 , H01J37/3244 , H01L21/67167 , H01L21/67178 , H01L21/6719
摘要： A processing station (1201) adaptable to standard cluster tools (1100) has a vertically-translatable pedestal (1215) having wafer-support surface (1307) including a heater plate (1303). At a lower position wafers (1219) may be transferred to and from the processing station (1201), and at an upper position the pedestal (1215) forms an annular pumping passage with a lower circular opening in a processing chamber (1204). A replaceable ring (1253) at the lower opening of the processing chamber (1204) allows process pumping speed to be tailored for different processes. The pedestal (1215) also has a surrounding shroud (1257) defining an annular pumping passage around the pedestal (1215). A two-zone heater plate (1303) is adapted to the top of the pedestal (1215), and connects to a feedthrough (1301) allowing heater plate (1303) to be quickly and simply replaced. The top of the processing chamber (1204) is removable allowing users to remove either the pedestal (1215) or heater (1303) assemblies. The system is adapted to atomic layer deposition processing.
摘要翻译：适用于标准簇工具的处理站具有可垂直平移的基座，其具有上晶片支撑表面，该上晶片支撑表面包括适于插入基座中的唯一馈通的加热板。在底座晶片的下部位置可以被传送到加工站和从处理站移动，并且在用于底座的上部位置处，基座在处理室中形成具有下部圆形开口的环形泵送通道。在处理室的下开口处的可移除的可更换的环允许通过更换环来为不同的过程调整过程泵送速度。在一些实施例中，基座还具有限定围绕基座的环形抽吸通道的周围护罩。独特的双区加热板适用于基座的顶部，并连接到独特的馈通，允许快速简单地更换加热器板。在一些实施例中，处理室的顶部是可移除的，允许用户移除基座或加热器组件。或者两者，通过处理站的开放顶部。在优选实施例中，该系统适用于原子层沉积处理。

8. 发明公开

EP1159465A1 PROCESSING CHAMBER FOR ATOMIC LAYER DEPOSITION PROCESSES 有权
标题翻译：一种用于沉积原子层的方法
公开(公告)号：EP1159465A1
公开(公告)日：2001-12-05
申请号：EP99967400.5
申请日：1999-12-16
申请人： GENUS, INC.
发明人： DOERING, Kenneth , GALEWSKI, Carl, J. , GADGIL, Prasad, N. , SEIDEL, Thomas, E.
IPC分类号： C23C16/00 , H05B3/06
CPC分类号： C30B25/14 , C23C16/44 , C23C16/4412 , C23C16/45544 , C23C16/45546 , C23C16/4583 , C23C16/46 , C23C16/54 , C30B25/12 , H01J37/3244 , H01L21/67167 , H01L21/67178 , H01L21/6719
摘要： A processing station (1201) adaptable to standard cluster tools (1100) has a vertically-translatable pedestal (1215) having wafer-support surface (1307) including a heater plate (1303). At a lower position wafers (1219) may be transferred to and from the processing station (1201), and at an upper position the pedestal (1215) forms an annular pumping passage with a lower circular opening in a processing chamber (1204). A replaceable ring (1253) at the lower opening of the processing chamber (1204) allows process pumping speed to be tailored for different processes. The pedestal (1215) also has a surrounding shroud (1257) defining an annular pumping passage around the pedestal (1215). A two-zone heater plate (1303) is adapted to the top of the pedestal (1215), and connects to a feedthrough (1301) allowing heater plate (1303) to be quickly and simply replaced. The top of the processing chamber (1204) is removable allowing users to remove either the pedestal (1215) or heater (1303) assemblies. The system is adapted to atomic layer deposition processing.

9. 发明公开

EP4379091A2 SUBSTRATE LOADING 审中-公开
公开(公告)号：EP4379091A2
公开(公告)日：2024-06-05
申请号：EP24170463.4
申请日：2012-11-23
申请人： Picosun Oy
发明人： KILPI, Väinö , KOSTAMO, Juhana , LI, Wei-Min
IPC分类号： C23C16/455
CPC分类号： H01L21/67742 , H01L21/67757 , H01L21/68707 , C23C16/45546 , H01L21/67718
摘要： An apparatus and method for loading a plurality of substrates into a substrate holder in a loading chamber of a deposition reactor to form a vertical stack of horizontally oriented substrates within said substrate holder, for turning the substrate holder to form a horizontal stack of vertically oriented substrates, and for lowering the substrate holder into a reaction chamber of the deposition reactor for deposition.

10. 发明公开

EP3087585A1 UNIFORM CHEMICAL VAPOR DEPOSITION COATING ON A 3-DIMENSIONAL ARRAY OF UNIFORMLY SHAPED ARTICLES 审中-公开
标题翻译：作者均匀的化学DANMPABSCHEIDUNG上的均匀成型制品的有3维排列的应用
公开(公告)号：EP3087585A1
公开(公告)日：2016-11-02
申请号：EP14874194.5
申请日：2014-12-16
申请人： 3M Innovative Properties Company
发明人： OUDERKIRK, Andrew J. , POWERS, Max , GABRIEL, Nicholas T. , DODGE, Bill H. , MCDOWELL, Erin A. , KIESCHKE, Robert R. , JESUDOSS, Arokiaraj
IPC分类号： H01L21/205 , H01L21/56 , H01L33/00
CPC分类号： G02B5/3083 , C23C16/442 , C23C16/45502 , C23C16/45546 , C23C16/458 , G02B1/08 , G02B27/14 , G02B27/283 , H01L2933/0025
摘要： The present invention is a method of coating uniformly shaped and sized articles. The method includes providing a reactor having an arrayed inner surface, positioning the articles within the reactor, and coating the articles.

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