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1. 发明公开

EP2356671A4 CHEMICAL VAPOR DEPOSITION WITH ELEVATED TEMPERATURE GAS INJECTION 审中-公开
标题翻译：注气高温化学汽相沉积
公开(公告)号：EP2356671A4
公开(公告)日：2013-07-17
申请号：EP09825467
申请日：2009-11-06
申请人： VEECO INSTR INC
发明人： GURARY ALEX , BELOUSOV MIKHAIL , MITROVIC BOJAN
IPC分类号： H01L21/205 , C23C16/455 , C23C16/458
CPC分类号： H01L21/02538 , C23C16/301 , C23C16/45504 , C23C16/4557 , C23C16/45574 , C23C16/45578 , C23C16/45587 , C23C16/458 , C23C16/4584 , C23C16/46 , H01L21/0262

2. 发明公开

EP2483440A1 NON-ORTHOGONAL COATER GEOMETRY FOR IMPROVED COATINGS ON A SUBSTRATE 审中-公开
标题翻译：非正交涂层几何的改进涂层在基底上
公开(公告)号：EP2483440A1
公开(公告)日：2012-08-08
申请号：EP10747996.6
申请日：2010-08-16
申请人： PPG Industries Ohio, Inc.
发明人： MCCAMY, James W. , SOPKO, John F.
IPC分类号： C23C16/44 , C23C16/455 , C23C16/54
CPC分类号： C23C16/4401 , C23C16/4412 , C23C16/45502 , C23C16/45563 , C23C16/45578 , C23C16/45587 , C23C16/54
摘要： A coating apparatus includes non-orthogonal coater geometry to improve coatings on a glass ribbon, and to improve yields of such coatings. The apparatus includes a first arrangement to move the ribbon along a first imaginary straight line (23) through a coating zone provided in a glass forming chamber. The coater has a coating nozzle (80) and an exhaust slot, (83) each have a longitudinal axis. The coating nozzle (80) directs coating vapors toward the coating zone, and the exhaust slot (82) removes vapors from the coating zone. A second arrangement mounts the coater in spaced relation to the path with the coating nozzle (80) and the exhaust slot (82) facing the coating zone. A second imaginary straight line (94) is normal to the longitudinal axis of the coating nozzle (80), and the first imaginary line (23) and the second imaginary line (94) suspend an angle in the range of greater than zero degrees to 90 degrees.

3. 发明公开

EP1866465A2 REACTION SYSTEM FOR GROWING A THIN FILM 审中-公开
标题翻译：反应体系用于生产薄膜
公开(公告)号：EP1866465A2
公开(公告)日：2007-12-19
申请号：EP06718678.3
申请日：2006-01-17
申请人： ASM America, Inc.
发明人： VERGHESE, Mohith , SHERO, Eric , BABIC, Darko , TERHORST, Herbert , PEUSSA, Marko , YAN, Min
IPC分类号： C30B25/14 , C23C16/455
CPC分类号： H01L21/68785 , C23C16/4408 , C23C16/455 , C23C16/45517 , C23C16/45525 , C23C16/45544 , C23C16/45561 , C23C16/45563 , C23C16/45582 , C23C16/45587 , C23C16/45591 , C23C16/458 , C23C16/4582 , C23C16/4583 , C23C16/4586 , C30B35/00 , H01L21/67236 , H01L21/68714 , H01L21/68742
摘要： An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

4. 发明授权

EP2363511B1 Film deposition method and film deposition device 有权
标题翻译：膜沉积方法和膜沉积装置
公开(公告)号：EP2363511B1
公开(公告)日：2017-04-26
申请号：EP11154967.1
申请日：2011-02-18
申请人： Fujifilm Corporation
发明人： Nishida, Hiroyuki
IPC分类号： C23C16/34 , C23C16/455 , C23C16/509 , C23C16/52 , C23C16/54 , C23C30/00
CPC分类号： C23C16/545 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/45587 , C23C16/45591 , C23C16/509 , C23C16/52 , C23C16/54 , C23C30/00 , Y10T428/24992

5. 发明公开

EP2599108A2 SUBSTRATE PROCESSING APPARATUSES AND SYSTEMS 有权
标题翻译：设备和系统进行处理衬底
公开(公告)号：EP2599108A2
公开(公告)日：2013-06-05
申请号：EP11813211.7
申请日：2011-07-28
申请人： Lawrence Advanced Semiconductor Technologies, LLC
发明人： COLVIN, Ronald, L. , GOODWIN, Dennis , MITTENDORF, Jeff , MORETTI, Charles, J. , ROSE, John, W. , SAMUELS, Earl, Blake
IPC分类号： H01L21/205
CPC分类号： C23C16/45587 , C23C16/45502 , C23C16/45563 , C23C16/46 , H01L21/02521 , H01L21/02532 , H01L21/0262 , H05B3/24 , H05B2203/004
摘要： A system for processing substrates is described. In one embodiment, the system comprises a process chamber, at least one electrical resistance heater, and at least one Coanda effect gas injector.

6. 发明公开

EP2363511A3 Gas barrier film, film deposition method, and film deposition device 有权
标题翻译： Gasabgrenzungsfilm，Filmablagerungsverfahren UND Filmablagerungsvorrichtung
公开(公告)号：EP2363511A3
公开(公告)日：2011-10-19
申请号：EP11154967.1
申请日：2011-02-18
申请人： Fujifilm Corporation
发明人： Nishida, Hiroyuki
IPC分类号： C23C16/34 , C23C16/455 , C23C16/509 , C23C16/52 , C23C16/54 , C23C30/00
CPC分类号： C23C16/545 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/45587 , C23C16/45591 , C23C16/509 , C23C16/52 , C23C16/54 , C23C30/00 , Y10T428/24992
摘要： A gas barrier film comprises: a base film; and a silicon nitride layer deposited on a surface of the base film, wherein in a direction of a thickness of the silicon nitride layer, a first mean density of a region of the silicon nitride layer closer to the base film and having a 20% thickness of the silicon nitride layer is lower than a second mean density of a region opposite from the base film and having a 20% thickness of the silicon nitride layer, and a third mean density of a middle region having a 20% thickness of the silicon nitride layer lies between the first mean density and the second mean density.

7. 发明公开

EP2102382A1 DELIVERY DEVICE FOR DEPOSITION 审中-公开
标题翻译：释放设备存款
公开(公告)号：EP2102382A1
公开(公告)日：2009-09-23
申请号：EP07868027.9
申请日：2007-12-26
申请人： Eastman Kodak Company
发明人： LEVY, David, Howard , KERR, Roger, Stanley
IPC分类号： C23C16/455 , C23C16/54
CPC分类号： C23C16/45525 , C23C16/45551 , C23C16/45587 , C23C16/545
摘要： A delivery device (150) for thin-film material deposition has at least first, second, and third inlet ports (14), (16), (18) for receiving a common supply for a first, a second and a third gaseous material, respectively. Each of the first, second, and third elongated emissive channels (132) allow gaseous fluid communication with one of corresponding first, second, and third inlet ports (14), (16), (18). The delivery device is formed from apertured plates (100), (110), (120), (130), superposed to define a network of interconnecting supply chambers and directing channels for routing each of the gaseous materials from its corresponding inlet port (14), (16), (18) to its corresponding plurality of elongated emissive channels (132).

8. 发明公开

EP1703549A4 VAPOR GROWTH DEVICE AND PORDUCTION METHOD FOR EPITAXIAL WAFER 审中-公开
标题翻译： DAMPFWACHSTUM-EINRICHTUNG UND HERSTELLUNGSVERFAHRENFÜREINEN EPITAXIALWAFER
公开(公告)号：EP1703549A4
公开(公告)日：2009-09-02
申请号：EP04820494
申请日：2004-11-18
申请人： SHINETSU HANDOTAI KK
发明人： YAMADA TORU , YAGI SHINICHIRO
IPC分类号： C23C16/24 , C30B25/14 , C23C16/44 , C23C16/455 , H01L21/205
CPC分类号： C23C16/45587 , C30B25/14 , C30B29/06
摘要： A vapor growth device (1) which is constituted as a single-wafer type and has a gas introducing port (21) through which a material gas (G) is led into a reaction vessel (2). A dam member (23) is disposed around a susceptor (12), and the material gas (G) from the gas introducing port (21) hits the outer peripheral surface (23b) of the dam member (23) and rides on an upper surface (23a) side, and then is allowed to flow along the main surface of a silicon single-crystal substrate (W) placed on the susceptor (12). Guide plates (40R, 40L, 41R, 41L) for dividing the flow in the width direction (WL) of the material gas (G) are disposed on the upper surface (23a) of the dam member (23). Accordingly, a vapor growth device capable of controlling the flow route of material gas flowing on a silicon single-crystal substrate, and a production method for an epitaxial wafer using it are provided.
摘要翻译：本发明提供一种气相生长装置（1），其构成为单晶片型，具有将原料气体（G）导入反应容器（2）的气体导入口（21）。在基座12的周围配置有阻挡部件23，来自气体导入口21的原料气体G碰到阻挡部件23的外周面23b，（23a）侧，然后沿着放置在基座（12）上的硅单晶衬底（W）的主表面流动。用于在原料气体（G）的宽度方向（WL）上划分流动的导向板（40R，40L，41R，41L）设置在阻挡构件（23）的上表面（23a）上。因此，提供了一种能够控制在硅单晶衬底上流动的材料气体的流动路径的气相生长装置以及使用它的外延晶片的生产方法。

9. 发明公开

EP2714959A4 APPARATUS AND METHOD FOR COMBINATORIAL GAS DISTRIBUTION THROUGH A MULTI-ZONED SHOWERHEAD 审中-公开
标题翻译： DEVICE AND METHOD FOR组合油气分布通过与多个区域的花洒
公开(公告)号：EP2714959A4
公开(公告)日：2015-01-07
申请号：EP12789308
申请日：2012-05-24
申请人： INTERMOLECULAR INC
发明人： ENDO RICHARD , CHIANG TONY P
IPC分类号： C23C16/00 , C23C16/04 , C23C16/455 , H01J37/32
CPC分类号： C23C16/45565 , C23C16/04 , C23C16/455 , C23C16/45514 , C23C16/45517 , C23C16/45519 , C23C16/45587 , C23C16/52 , H01J37/32366 , H01J37/3244 , H01J37/32449

10. 发明公开

EP2599108A4 SUBSTRATE PROCESSING APPARATUSES AND SYSTEMS 有权
标题翻译： VORRICHTUNG UND SYSTEME ZUR SUBSTRATVERARBEITUNG
公开(公告)号：EP2599108A4
公开(公告)日：2014-05-21
申请号：EP11813211
申请日：2011-07-28
申请人： LAWRENCE ADVANCED SEMICONDUCTOR TECHNOLOGIES LLC
发明人： COLVIN RONALD L , GOODWIN DENNIS , MITTENDORF JEFF , MORETTI CHARLES J , ROSE JOHN W , SAMUELS EARL BLAKE
IPC分类号： H01L21/205 , C23C16/455 , C23C16/46 , H05B3/24
CPC分类号： C23C16/45587 , C23C16/45502 , C23C16/45563 , C23C16/46 , H01L21/02521 , H01L21/02532 , H01L21/0262 , H05B3/24 , H05B2203/004

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