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1. 发明授权

EP2551892B1 METHOD FOR PRODUCING GaN FILM 有权
标题翻译：生产GaN膜的方法
公开(公告)号：EP2551892B1
公开(公告)日：2017-12-20
申请号：EP11841250.1
申请日：2011-11-10
申请人： Sumitomo Electric Industries, Ltd.
发明人： SATOH, Issei , SEKI, Yuki , UEMATSU, Koji , YAMAMOTO, Yoshiyuki , MATSUBARA, Hideki , FUJIWARA, Shinsuke , YOSHIMURA, Masashi
IPC分类号： H01L21/02 , H01L21/20 , H01L21/205 , H01L21/762 , H01L33/00
CPC分类号： H01L33/007 , H01L21/76256 , H01L33/0079
摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate (10), the composite substrate including a support substrate (11) in which a coefficient of thermal expansion in a main surface (11m) is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film (13) arranged on a side of the main surface (11m) of the support substrate (11), the single crystal film (13) having threefold symmetry with respect to an axis perpendicular to a main surface (13m) of the single crystal film (13), and forming a GaN-based film (20) on the main surface (13m) of the single crystal film (13) in the composite substrate (10). Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

2. 发明公开

EP2908330A1 GROUP III NITRIDE COMPOSITE SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译： GROUP III NITRIDVERBUNDSUBSTRAT，工艺为III族氮化物半导体部件用和方法
公开(公告)号：EP2908330A1
公开(公告)日：2015-08-19
申请号：EP13845267.7
申请日：2013-09-04
申请人： Sumitomo Electric Industries, Ltd.
发明人： ISHIBASHI, Keiji , HACHIGO, Akihiro , HIROMURA, Yuki , MATSUMOTO, Naoki , NAKAHATA, Seiji , NAKANISHI, Fumitake , YANAGISAWA, Takuya , UEMATSU, Koji , SEKI, Yuki , YAMAMOTO, Yoshiyuki , YOSHIZUMI, Yusuke , MIKAMI, Hidenori
IPC分类号： H01L21/02
CPC分类号： H01L21/76251 , B32B7/02 , B32B7/04 , B32B7/06 , B32B2307/20 , H01L21/76254 , H01L21/76256 , H01L29/2003 , H01L33/007 , H01L33/0079 , H01L33/025 , H01L2924/0002 , Y10T428/24298 , Y10T428/24322 , Y10T428/24331 , Y10T428/2495 , Y10T428/24975 , Y10T428/26 , Y10T428/265 , Y10T428/31 , H01L2924/00
摘要： Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate (1) includes a group III nitride film (13) and a support substrate (11) formed from a material different in chemical composition from the group III nitride film (13). The group III nitride film (13) is joined to the support substrate (11) in one of a direct manner and an indirect manner. The group III nitride film (13) has a thickness of 10 µm or more. A sheet resistance of a group III-nitride-film (13)-side main surface (13m) is 200 Ω/sq or less. A method for manufacturing the group III nitride composite substrate (1) includes the steps of: bonding the group III nitride film (13) and the support substrate (11) to each other in one of a direct manner and an indirect manner; and reducing the thickness of at least one of the group III nitride film (13) and the support substrate bonded to each other.
摘要翻译：本发明提供一种III族氮化物复合衬底具有低薄层电阻和以高产率，和用于制造其的方法，以及用于制造使用该III族氮化物复合衬底的III族氮化物半导体器件的方法制造。 III族氮化物复合衬底（1）包括：III族氮化物膜（13）和从在化学组成不同的材料形成为从所述III族氮化物膜（13）的支撑基板（11）。 III族氮化物的电影（13）以直接的方式中的一个，并间接地接合到所述支撑基板（11）。 III族氮化物膜（13）的厚度为10微米或更大。一III族氮化物膜（13）侧的主面（13米）的薄层电阻为200©/ sq或更小。一种用于制造III族氮化物复合衬底（1）的方法包括以下步骤：贴合III族氮化物的电影（13）和以直接的方式中的一个，并间接方式与支撑基板（11）彼此连接; 并降低了III族氮化物的电影（13）和键合到海誓山盟支撑基板中的至少一个的厚度。

3. 发明公开

EP2765226A1 GAN FILM MANUFACTURING METHOD AND COMPOSITE SUBSTRATE USED IN SAME 审中-公开
标题翻译： VERFAHREN ZUR HERSTELLUNG EINES GAN-FILMS UND DARIN VERWENDETES VERBUNDSUBSTRAT
公开(公告)号：EP2765226A1
公开(公告)日：2014-08-13
申请号：EP11865443.3
申请日：2011-12-21
申请人： Sumitomo Electric Industries, Ltd.
发明人： SATOH, Issei , SEKI, Yuki , UEMATSU, Koji , YAMAMOTO, Yoshiyuki , MATSUBARA, Hideki , FUJIWARA, Shinsuke , YOSHIMURA, Masashi
IPC分类号： C30B29/38 , H01L21/205
CPC分类号： H01L21/0254 , C03C10/0018 , C04B35/106 , C04B35/16 , C04B35/185 , C04B35/481 , C04B35/486 , C04B35/488 , C04B35/645 , C04B35/6455 , C04B2235/3225 , C04B2235/3244 , C04B2235/3246 , C04B2235/3463 , C04B2235/9607 , C30B23/025 , C30B25/183 , C30B29/406 , H01L21/02002 , H01L21/02422 , H01L21/02436 , H01L21/02458 , H01L21/02658 , H01L21/02664
摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate (10) including a support substrate (11) dissoluble in hydrofluoric acid and a single crystal film (13) arranged on a side of a main surface (11m) of the support substrate (11), a coefficient of thermal expansion in the main surface (11m) of the support substrate (11) being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film (20) on a main surface (13m) of the single crystal film (13) arranged on the side of the main surface (11m) of the support substrate (11), and removing the support substrate (11) by dissolving the support substrate (11) in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.
摘要翻译：本发明的GaN系膜的制造方法包括以下步骤：制备复合基板（10），该复合基板（10）具有可溶于氢氟酸的支撑基板（11）和配置在主表面（11m）侧的单晶膜），支撑基板（11）的主表面（11m）中的热膨胀系数大于0.8倍且小于GaN晶体的热膨胀系数的1.2倍的热膨胀系数，在布置在支撑基板（11）的主表面（11m）侧的单晶膜（13）的主表面（13m）上形成GaN基膜（20），并且将支撑基板（11））通过将支撑基板（11）溶解在氢氟酸中。因此，提供了能够有效地获得主表面积大，翘曲小，结晶性好的GaN系膜的GaN系膜的制造方法以及用于其的复合基板。

4. 发明公开

EP2551892A1 METHOD FOR PRODUCING GaN FILM 有权
标题翻译： VERFAHREN ZUR HERSTELLUNG EINES GAN-FILMS
公开(公告)号：EP2551892A1
公开(公告)日：2013-01-30
申请号：EP11841250.1
申请日：2011-11-10
申请人： Sumitomo Electric Industries, Ltd.
发明人： SATOH, Issei , SEKI, Yuki , UEMATSU, Koji , YAMAMOTO, Yoshiyuki , MATSUBARA, Hideki , FUJIWARA, Shinsuke , YOSHIMURA, Masashi
IPC分类号： H01L21/02 , H01L21/20 , H01L21/205
CPC分类号： H01L33/007 , H01L21/76256 , H01L33/0079
摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate (10), the composite substrate including a support substrate (11) in which a coefficient of thermal expansion in a main surface (11m) is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film (13) arranged on a side of the main surface (11m) of the support substrate (11), the single crystal film (13) having threefold symmetry with respect to an axis perpendicular to a main surface (13m) of the single crystal film (13), and forming a GaN-based film (20) on the main surface (13m) of the single crystal film (13) in the composite substrate (10). Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.
摘要翻译：本发明的GaN系膜的制造方法具有以下步骤：制备复合基板（10），所述复合基板包括主表面（11m）的热膨胀系数大于0.8的支撑基板（11）时间小于GaN晶体沿轴向的热膨胀系数和布置在支撑基板（11）的主表面（11m）侧的单晶膜（13）的1.2倍以下，所述单晶膜（13）相对于垂直于所述单晶膜（13）的主表面（13m）的轴线具有三重对称性，并且在所述主晶面（13m）上形成GaN基膜（20）复合衬底（10）中的单晶膜（13）。因此，提供了一种制造能够制造具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

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