专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

EP4073846B1 METHOD AND APPARATUS FOR DEPOSITION OF CARBON NANOSTRUCTURES 有权
公开(公告)号：EP4073846B1
公开(公告)日：2024-07-24
申请号：EP19827662.8
申请日：2019-12-11
IPC分类号： H01L29/16 , H01M4/04 , C23C16/26 , C23C16/505 , C23C16/54 , H01L21/02
CPC分类号： C23C16/505 , C23C16/545 , C23C16/26 , H01L21/02527 , H01M4/0428 , H01L21/02425 , H01L21/0262 , Y02E60/10

2. 发明公开

EP3419061A1 GALLIUM NITRIDE SEMICONDUCTOR STRUCTURE AND PROCESS FOR FABRICATING THEREOF 有权
公开(公告)号：EP3419061A1
公开(公告)日：2018-12-26
申请号：EP18178345.7
申请日：2018-06-18
申请人： Elta Systems Ltd.
发明人： KAPLUN, Joseph , HOULI ARBIV, Bilha
IPC分类号： H01L33/00 , H01L29/66
CPC分类号： H01L29/66446 , H01L21/0228 , H01L21/02378 , H01L21/02527 , H01L21/0254 , H01L21/2007 , H01L21/6835 , H01L29/1608 , H01L29/2003 , H01L33/0075 , H01L33/0079
摘要： A semiconductor substrate structure (10) and process for fabrication of the semiconductor substrate structure are described. The semiconductor substrate structure includes a silicon carbide (SiC) wafer substrate (11), an active gallium nitride (GaN) layer (212) and a layer of microcrystalline diamond (MCD) layer (101) disposed between the SiC wafer substrate and the GaN active layer. The MCD) layer is bonded to the SiC wafer substrate and to the GaN active layer.

3. 发明授权

EP2540662B1 Graphene structure and method of manufacturing the graphene structure, and graphene device and method of manufacturing the graphene device 有权转让
公开(公告)号：EP2540662B1
公开(公告)日：2018-08-08
申请号：EP12173032.9
申请日：2012-06-21
申请人： Samsung Electronics Co., Ltd.
发明人： Choi, Byoung-lyong , Lee, Eun-kyung , Whang, Dong-mok
IPC分类号： B82B1/00 , B82B3/00 , H01L29/10 , H01L29/775 , H01L29/16 , H01L29/06 , H01L29/66 , H01L21/02 , H01L29/78 , H01L29/786
CPC分类号： H01L29/1606 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/02164 , H01L21/02381 , H01L21/0245 , H01L21/02491 , H01L21/02527 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L29/0673 , H01L29/66045 , H01L29/66439 , H01L29/66742 , H01L29/775 , H01L29/785 , H01L29/78684 , H01L29/78696
摘要： A graphene structure and a method of manufacturing the graphene structure, and a graphene device and a method of manufacturing the graphene device. The graphene structure includes a substrate; a growth layer disposed on the substrate and having exposed side surfaces; and a graphene layer disposed on the side surfaces of the growth layer. A growth layer 120 and a protective layer 130 are sequentially formed on a substrate 110. The growth layer 120 is a layer from which a graphene layer 140 grows, and may be formed of for example, metal or germanium (Ge). The growth layer 120 may have a thickness of, for example, about several nanometers. As will be described later, the thickness of the growth layer 120 determines a width W of the graphene layer 140. Then, the protective layer 130 is formed on an upper surface of the growth layer 120. A groove 150 is formed in the protective layer 130 and the growth layer 120. The groove 150 is formed in a predetermined shape by sequentially etching the protective layer 130 and the growth layer 120. The groove 150 exposes side surfaces of the protective layer 130 and the growth layer 120 and an upper surface of the substrate 110. The groove 150 may be formed by etching the protective layer 130 and the growth layer 120 by using an etching mask until the upper surface of the substrate 110 is exposed. FIG. 3A is a perspective view showing that the graphene layer 140 is grown from the side surfaces of the growth layer 120.

4. 发明公开

EP3331822A1 SYNTHESIS AND PROCESSING OF Q-CARBON AND Q-BN, AND DIRECT CONVERSION OF CARBON INTO DIAMOND, BN, AND C-BN 无效
公开(公告)号：EP3331822A1
公开(公告)日：2018-06-13
申请号：EP16835746.5
申请日：2016-08-08
申请人： North Carolina State University
发明人： NARAYAN, Jagdish
IPC分类号： C01B32/00
CPC分类号： H01L21/0259 , C01B21/064 , C01B21/0648 , C01B32/05 , C01B32/188 , C01B32/25 , C01P2002/02 , C01P2004/03 , C01P2006/40 , C01P2006/42 , C01P2006/90 , C23C14/0605 , C23C14/0647 , C30B1/023 , C30B19/08 , C30B23/025 , C30B23/066 , C30B29/04 , C30B29/403 , C30B29/62 , C30B31/06 , C30B31/22 , G01R33/032 , G01R33/1284 , H01F1/42 , H01L21/02527 , H01L21/0254 , H01L21/02595 , H01L21/02603 , H01L21/02609 , H01L21/02631 , H01L21/02686 , H01L21/268 , H01L43/10 , H03B15/006
摘要： Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

5. 发明公开

EP3330414A1 DIAMOND SUBSTRATE AND METHOD FOR PRODUCING DIAMOND SUBSTRATE 审中-公开
公开(公告)号：EP3330414A1
公开(公告)日：2018-06-06
申请号：EP16832926.6
申请日：2016-07-29
申请人： Adamant Namiki Precision Jewel Co., Ltd.
发明人： AIDA Hideo , KOYAMA Koji , IKEJIRI Kenjiro , KIM Seongwoo , KIKUCHI Yuki
IPC分类号： C30B29/04
CPC分类号： H01L29/1602 , C30B29/04 , H01L21/02024 , H01L21/02527 , H01L21/0262 , H01L21/30625 , H01L29/0657
摘要： Provided is a self-support diamond substrate made of diamond and a method for producing such a diamond substrate in which the amount of warpage is reduced and variation of angle of the crystal axis over the entire substrate surface is reduced. A foundation substrate is prepared, several pieces of columnar diamond made of diamond single crystal are formed over one surface of the foundation substrate, the diamond single crystal is grown from the tip of each piece of columnar diamond, each piece of diamond single crystal grown from the tip of each piece of columnar diamond is brought into coalescence to form a diamond substrate layer, the diamond substrate layer is separated from the foundation substrate, and the diamond substrate is produced from the diamond substrate layer. The difference between the highest point and the lowest point in the thickness direction of the diamond substrate is more than 0 µm and 485 µm or less and the variation of the angle of the crystal axis over the entire surface of the diamond substrate is more than 0° and 3.00° or less.

6. 发明授权

EP1832673B1 Method for producing substrate for single crystal diamond growth 有权转让
公开(公告)号：EP1832673B1
公开(公告)日：2018-06-06
申请号：EP07004683.4
申请日：2007-03-07
申请人： Shin-Etsu Chemical Co., Ltd. , AGD Material Co.
发明人： SAWABE, Atsuhito , NOGUCHI, Hitoshi Advanced Functional Materials Research Center, SHIN-ETSU CHEMICAL CO., LTD. , Shintaro MAEDA
IPC分类号： C30B29/04 , H01L29/00 , C30B25/18 , H01L21/02
CPC分类号： C30B25/18 , C30B29/04 , H01L21/0242 , H01L21/02425 , H01L21/02433 , H01L21/02444 , H01L21/02491 , H01L21/02527 , H01L21/0262 , H01L21/02658
摘要： There is disclosed a method for producing a substrate for single crystal diamond growth, comprising at least a step of preliminarily subjecting a substrate before single crystal diamond growth to a bias treatment for forming a diamond nucleus thereon by a direct-current discharge in which an electrode in a substrate side is a cathode, and wherein in the treatment, at least, a temperature of the substrate from 40 sec after an initiation of the bias treatment to an end of the bias treatment is held in a range of 800°C ± 60°C. There can be provided a method for producing a substrate for single crystal diamond growth, by which a single crystal diamond can be grown more certainly.

7. 发明授权

EP2760786B1 PROCÉDÉ DE FORMATION D'UNE COUCHE DE GRAPHÈNE À LA SURFACE D'UN SUBSTRAT COMPRENANT UNE COUCHE DE SILICIUM 有权
标题翻译：在包括硅层的衬底的表面上形成石墨层的方法
公开(公告)号：EP2760786B1
公开(公告)日：2018-05-02
申请号：EP12762648.9
申请日：2012-09-28
申请人： Centre National de la Recherche Scientifique
发明人： OUERGHI, Abdelkarim
IPC分类号： C01B32/20 , B82Y30/00 , B82Y40/00 , H01L21/02 , H01L29/16 , C01B32/184 , C01B32/188
CPC分类号： H01L21/02527 , B82Y30/00 , B82Y40/00 , C01B32/184 , C01B32/188 , H01L21/02381 , H01L21/0243 , H01L21/02447 , H01L21/02612 , H01L29/1606

8. 发明公开

EP3179518A4 THIN-FILM TRANSISTOR AND PREPARATION METHOD THEREFOR, ARRAY SUBSTRATE, AND DISPLAY DEVICE 有权
公开(公告)号：EP3179518A4
公开(公告)日：2018-03-28
申请号：EP16822102
申请日：2016-02-03
申请人： BOE TECHNOLOGY GROUP CO LTD
发明人： HUANG YONGCHAO
IPC分类号： H01L29/45 , G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L21/02 , H01L21/04 , H01L27/12 , H01L27/32 , H01L29/16 , H01L29/167 , H01L29/40 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/66 , H01L29/786 , H01L51/52
CPC分类号： H01L29/4908 , G02F1/134309 , G02F1/13439 , G02F1/1362 , G02F1/136286 , G02F1/1368 , G02F2201/121 , G02F2201/123 , G02F2202/10 , H01L21/02527 , H01L21/0259 , H01L21/0262 , H01L21/043 , H01L21/044 , H01L27/124 , H01L27/3262 , H01L29/1606 , H01L29/167 , H01L29/408 , H01L29/41733 , H01L29/42384 , H01L29/45 , H01L29/458 , H01L29/66045 , H01L29/78606 , H01L29/78684 , H01L51/5206
摘要： The present disclosure provides a thin film transistor, a method for producing the same, an array substrate and a display apparatus. An electrode of the thin film transistor is made of Cu or Cu alloy, and an anti-oxidization layer is used to prevent oxidization of Cu. The thin film transistor includes a gate electrode, a gate insulation layer, a semiconductor active layer, a source electrode and a drain electrode provided on a base substrate, wherein the gate electrode and/or the drain and source electrodes is/are made of Cu or Cu alloy. The thin film transistor further includes an anti-oxidization layer made of a topological insulator material, the anti-oxidization layer being provided above and in contact with the gate electrode and/or the source and drain electrodes made of Cu or Cu alloy.

9. 发明公开

EP3246937A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING COMPOSITE SEMICONDUCTOR SUBSTRATE, COMPOSITE SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR BONDING SUBSTRATE 有权
标题翻译：制造半导体衬底的方法，半导体衬底，制造复合半导体衬底，复合半导体衬底和半导体结合衬底的方法
公开(公告)号：EP3246937A1
公开(公告)日：2017-11-22
申请号：EP16737453.7
申请日：2016-01-15
申请人： Sumitomo Electric Industries, Ltd.
发明人： NISHIBAYASHI, Yoshiki , NAKAMAE, Kazuo
IPC分类号： H01L21/02 , H01L21/20 , H01L21/205 , H01L21/265
CPC分类号： H01L21/7813 , C30B25/18 , H01L21/02 , H01L21/02527 , H01L21/02529 , H01L21/0254 , H01L21/02557 , H01L21/0256 , H01L21/0262 , H01L21/02658 , H01L21/20 , H01L21/205 , H01L21/265 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/22 , H01L29/34
摘要： A method for manufacturing a semiconductor substrate according to the present invention includes preparing a seed substrate (1) containing a semiconductor material, forming an ion implanted layer (2) at a certain depth from a front surface of a main surface of the seed substrate (1) by implanting ions into the seed substrate (1), growing a semiconductor layer (3) on the main surface of the seed substrate (1) with a vapor-phase synthesis method, and separating a semiconductor substrate (5) including the semiconductor layer (3) and a part (1a) of the seed substrate by irradiating the front surface of the main surface of at least any of the semiconductor layer (3) and the seed substrate (1) with light (4).
摘要翻译：根据本发明的用于制造半导体衬底的方法包括：制备包含半导体材料的籽晶衬底（1）;在离种子衬底的主表面的前表面（距离衬底1的表面）一定深度处形成离子注入层（2） 1），通过向种子基板（1）内注入离子，利用气相合成法在种子基板（1）的主表面上生长半导体层（3），并将包含半导体基板通过用光（4）照射所述半导体层（3）和所述种子基板（1）中的至少任一个的所述主表面的前表面来形成所述种子基板的所述层（3）和所述种子基板的部分（1a）。

10. 发明公开

EP3243794A1 A METHOD OF MAKING AN ARRAY OF SENSOR PIXELS, AND ASSOCIATED APPARATUS AND METHODS 审中-公开
标题翻译：一种制造传感器像素阵列的方法以及相关装置和方法
公开(公告)号：EP3243794A1
公开(公告)日：2017-11-15
申请号：EP16168895.7
申请日：2016-05-10
申请人： Emberion Oy
发明人： Bower, Chris , White, Richard , Liu, Yinglin , Rushton, Ashley
IPC分类号： B82Y10/00 , B82Y15/00 , H01L21/02 , H01L29/66 , H01L27/146 , H01L29/16
CPC分类号： H01L29/1606 , B82Y10/00 , B82Y15/00 , H01L21/02491 , H01L21/02527 , H01L21/0262 , H01L27/1461 , H01L27/14616 , H01L29/66015
摘要： A method (Fig. 4) of making an array of sensor pixels, the method comprising:
- forming an array of nucleation sites (415) on a growth substrate (Step 2), each nucleation site configured to facilitate the growth of a respective domain of channel material on the growth substrate and the array of nucleation sites having a predefined configuration corresponding to an arrangement of pixel regions on a target substrate;
- growing an array of domains (416) of channel material on the growth substrate from the array of respective nucleation sites to form a layer of channel material (step 3); - transferring the layer of channel material onto the target substrate such that the domains of channel material are substantially aligned with the pixel regions of the target substrate (step 6), to allow the formation of a pixel array.
Each pixel (Fig. 1) of the array comprises source (101) and drain (102) electrodes configured to enable a flow of electrical current through a respective domain of channel material (103), and a functionalising material (104) on the domain of channel material configured to produce a detectable change in the flow of electrical current on exposure to a physical stimulus which is indicative of one or more of the presence and magnitude of the physical stimulus.
In particular, the channel material (103) may be graphene or another two-dimensional material, and the functionalising material (104) may be quantum dots (107).
摘要翻译：一种制作传感器像素阵列的方法（图4），该方法包括： - 在生长衬底上形成成核位点阵列（415）（步骤2），每个成核位点被配置为促进相应域的生长在生长衬底上的沟道材料和具有与目标衬底上的像素区域的排列对应的预定义配置的成核位点阵列; - 从各个成核位点阵列在生长衬底上生长沟道材料的阵列域（416）以形成沟道材料层（步骤3）; - 将沟道材料层转移到目标衬底上，使得沟道材料的畴基本上与目标衬底的像素区域对准（步骤6），以允许形成像素阵列。阵列的每个像素（图1）包括被配置为使电流能够流过通道材料（103）的相应区域的源极（101）和漏极（102）电极，以及该区域上的官能化材料沟道材料被配置为在暴露于指示物理刺激的存在和量值中的一个或多个的物理刺激时产生电流的可检测变化。特别地，沟道材料（103）可以是石墨烯或另一种二维材料，并且功能化材料（104）可以是量子点（107）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式