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1. 发明公开

EP3056306A1 DRILL 有权转让
标题翻译：钻头
公开(公告)号：EP3056306A1
公开(公告)日：2016-08-17
申请号：EP16162957.1
申请日：2012-12-25
申请人： Sumitomo Electric Industries, Ltd. , Sumitomo Electric Hardmetal Corp. , KAWASAKI JUKOGYO KABUSHIKI KAISHA
发明人： OKA, Hisao , SATO, Yoshiji , MEGURO, Kiichi , TAMURA, Junichi , SUZUKI, Satoshi
IPC分类号： B23B51/00 , B23B51/02
CPC分类号： B23B51/02 , B23B51/009 , B23B2226/27 , B23B2226/275 , B23B2226/31 , B23B2226/61 , B23B2228/10 , B23B2251/046 , B23B2251/14 , B23B2251/18 , B23B2251/201 , B23B2251/245 , B23B2251/408 , B23B2265/34 , Y10T408/906
摘要： It is an object to obtain a drill for drilling a hole, comprising: a cutting edge (3) disposed on a front end of a body (1) as to extend from a rotation center of the drill to an outer periphery of the drill, the cutting edge being shaped symmetric with respect to the rotation center of the drill, the cutting edge including at least a rotation center side cutting edge portion (3a) and an outer peripheral side cutting edge portion (3c) connected to a diameter-direction outer end of the rotation center side cutting edge portion, point angles (θ) of the respective cutting edge portions reducing gradually from the rotation center side cutting edge portion (3a) to the outer peripheral side cutting edge portion (3c), wherein a small diameter portion (6) is provided on a front end side of the body (1), the small diameter portion having an outside diameter smaller than a diameter of the drill, the cutting edge (3) with the point angles varied is formed in the small diameter portion, and a flat cutting edge (8) having an inclination angle (β) of 30° or less with respect to a line perpendicular to an axis of the drill is provided in a step portion (S) formed between the small diameter portion (6) and a large diameter portion (7), the large diameter portion being provided on a rear side of the small diameter portion and having an original outside diameter, wherein a helix angle (α1) in the small diameter portion (6) and a main helix angle (α2) of a helical flute (5) formed in the drill are constant.
摘要翻译：本发明的目的在于获得一种用于钻孔的钻头，其包括：切削刃（3），该切削刃布置在主体（1）的前端以从钻头的旋转中心延伸到钻头的外周，所述切削刃相对于所述钻头的旋转中心对称地形成，所述切削刃至少包括连接到所述钻头的直径方向外侧的旋转中心侧切削刃部（3a）和外周侧切削刃部（3c）在所述旋转中心侧切削刃部的前端形成有从所述旋转中心侧切削刃部至所述外周侧切削刃部逐渐减小的各切削刃部的尖角（θ）在所述主体（1）的前端侧设置有小径部（6），所述小径部的外径比所述钻头的直径小，所述角度变化的所述切削刃（3）形成为小径直径部分，和fla 在形成于所述小径部（6）和所述小直径部（6）之间的台阶部（S）中设有相对于与所述钻头的轴线垂直的直线具有30°以下的倾斜角度（β）的切削刃（8）所述大直径部分设置在所述小直径部分的后侧并且具有原始外直径，其中所述小直径部分（6）中的螺旋角（α1）和所述大直径部分（7）的主螺旋角（ α2）在钻中形成的螺旋槽（5）是恒定的。

2. 发明公开

EP2465970A1 DIAMOND-COATED TOOL 有权
标题翻译： DIAMANTBESCHICHTETES WERKZEUG
公开(公告)号：EP2465970A1
公开(公告)日：2012-06-20
申请号：EP10808102.7
申请日：2010-06-08
申请人： Sumitomo Electric Industries, Ltd. , Sumitomo Electric Hardmetal Corp.
发明人： YOSHIDA, Katsuhito , YOSHIDA, Shigeru , SEKI, Yuichiro , MEGURO, Kiichi , MATSUKAWA, Shinji
IPC分类号： C23C16/27 , B23B27/14 , B23B27/20 , B23B51/00 , B23C5/16
CPC分类号： B23B27/148 , B23B27/146 , B23B2226/315 , B23B2228/04 , C23C16/0227 , C23C16/27 , C23C16/271 , Y10T428/24372
摘要： The present invention provides a diamond coated tool (10) which is resistant to exfoliation at an interface between a base material (1) and a diamond layer (3). The diamond coated tool (10) of the present invention is a diamond coated tool (10) including a base material (1) and a diamond layer (3) coating a surface of the base material (1), and characterized in that the surface of the base material (1) has an arithmetic average roughness Ra of not less than 0.1 µm and not more than 10 µm and an average length of roughness profile elements RSm of not less than 1 µm and not more than 100 µm, and that the diamond layer (3) has a plurality of cavities (2) extending from a portion bordering on the base material (1) in a crystal growth direction.
摘要翻译：本发明提供一种金刚石涂层工具（10），其耐磨性在基材（1）和金刚石层（3）之间的界面处。本发明的金刚石涂层工具（10）是包括基材（1）和涂覆基材（1）的表面的金刚石层（3）的金刚石涂层工具（10），其特征在于，的基材（1）的算术平均粗糙度Ra为0.1μm以上且10μm以下，粗糙度轮廓元素RSm的平均长度为1μm以上且100μm以下，金刚石层（3）具有从基体材料（1）上接合的部分沿晶体生长方向延伸的多个空腔（2）。

3. 发明公开

EP2108714A1 MICROWAVE PLASMA CVD SYSTEM 有权
标题翻译： MIKROWELLEN - 等离子体CVD-SYSTEM
公开(公告)号：EP2108714A1
公开(公告)日：2009-10-14
申请号：EP07707612.3
申请日：2007-01-29
申请人： Sumitomo Electric Industries, Ltd.
发明人： UEDA, Akihiko , MEGURO, Kiichi , YAMAMOTO, Yoshiyuki , NISHIBAYASHI, Yoshiki , IMAI, Takahiro
IPC分类号： C23C16/511 , C30B29/04 , H01L21/205
CPC分类号： C30B25/105 , C23C16/24 , C23C16/511 , C30B29/04 , H01J37/32192 , H01J37/32238
摘要： The present invention provides a microwave plasma CVD device that can satisfactorily perform plasma position control under a condition capable of fabricating a large-area high-quality diamond thin film or the like. A microwave plasma CVD device includes: a vacuum chamber 1 having, in the center of its upper portion, an open portion 2 for introducing microwaves 20; a base material support table 11 for supporting a base material inside the vacuum chamber; a waveguide for guiding the microwaves to the open portion; a dielectric window 22 for introducing the microwaves to the inside of the vacuum chamber; and an antenna portion 25 for introducing the microwaves to the vacuum chamber, the antenna portion being configured by a round rod portion 23 that is positioned in the center of the waveguide, the open portion and the dielectric window and an electrode portion 24 that holds the dielectric window between the electrode portion and the upper portion of the vacuum chamber for vacuum retention, wherein an end surface of the electrode portion 24 is formed wider than the dielectric window such that the dielectric window is hidden, and a concave portion of a predetermined size is formed in the surface of the electrode portion 24 that faces the center of the vacuum chamber.
摘要翻译：本发明提供一种能够在能够制造大面积高品质金刚石薄膜等的条件下令人满意地进行等离子体位置控制的微波等离子体CVD装置。微波等离子体CVD装置包括：真空室1，其上部中心具有用于引入微波20的开口部分2; 用于在真空室内支撑基材的基材支撑台11; 用于将微波引导到开口部分的波导; 用于将微波引导到真空室的内部的电介质窗口22; 以及用于将微波引导到真空室的天线部分25，天线部分由位于波导中心的圆棒部分23，开口部分和电介质窗口以及保持所述电极部与所述真空室的上部之间的电介质窗用于真空保持，其中，所述电极部24的端面形成为比所述电介质窗宽，使得所述电介质窗被隐藏，并且具有预定尺寸的凹部形成在电极部分24的面对真空室的中心的表面上。

4. 发明授权

EP3056306B1 DRILL 有权转让
公开(公告)号：EP3056306B1
公开(公告)日：2017-10-25
申请号：EP16162957.1
申请日：2012-12-25
申请人： Sumitomo Electric Industries, Ltd. , Sumitomo Electric Hardmetal Corp. , Kawasaki Jukogyo Kabushiki Kaisha
发明人： OKA, Hisao , SATO, Yoshiji , MEGURO, Kiichi , TAMURA, Junichi , SUZUKI, Satoshi
IPC分类号： B23B51/00 , B23B51/02
CPC分类号： B23B51/02 , B23B51/009 , B23B2226/27 , B23B2226/275 , B23B2226/31 , B23B2226/61 , B23B2228/10 , B23B2251/046 , B23B2251/14 , B23B2251/18 , B23B2251/201 , B23B2251/245 , B23B2251/408 , B23B2265/34 , Y10T408/906

5. 发明授权

EP2226413B1 METHOD FOR MANUFACTURING DIAMOND MONOCRYSTAL HAVING A THIN FILM, AND DIAMOND MONOCRYSTAL HAVING A THIN FILM. 有权
标题翻译：用于生产单单只钻石晶体薄膜金刚石单晶与薄膜
公开(公告)号：EP2226413B1
公开(公告)日：2016-10-12
申请号：EP07860225.7
申请日：2007-12-26
申请人： Sumitomo Electric Industries, Ltd.
发明人： UEDA, Akihiko , MEGURO, Kiichi , YAMAMOTO, Yoshiyuki , NISHIBAYASHI, Yoshiki , IMAI, Takahiro
IPC分类号： C30B25/02 , C30B29/04 , C30B25/10 , H01L21/02
CPC分类号： C30B29/04 , C30B25/02 , C30B25/105 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/24355 , Y10T428/30

6. 发明授权

EP2465970B1 DIAMOND-COATED TOOL 有权
标题翻译：金刚石涂层刀具
公开(公告)号：EP2465970B1
公开(公告)日：2016-07-20
申请号：EP10808102.7
申请日：2010-06-08
申请人： Sumitomo Electric Industries, Ltd. , Sumitomo Electric Hardmetal Corp.
发明人： YOSHIDA, Katsuhito , YOSHIDA, Shigeru , SEKI, Yuichiro , MEGURO, Kiichi , MATSUKAWA, Shinji
IPC分类号： C23C16/27 , B23B27/14 , B23B27/20 , B23B51/00 , B23C5/16 , C23C16/02
CPC分类号： B23B27/148 , B23B27/146 , B23B2226/315 , B23B2228/04 , C23C16/0227 , C23C16/27 , C23C16/271 , Y10T428/24372
摘要： The present invention provides a diamond coated tool (10) which is resistant to exfoliation at an interface between a base material (1) and a diamond layer (3). The diamond coated tool (10) of the present invention is a diamond coated tool (10) including a base material (1) and a diamond layer (3) coating a surface of the base material (1), and characterized in that the surface of the base material (1) has an arithmetic average roughness Ra of not less than 0.1 µm and not more than 10 µm and an average length of roughness profile elements RSm of not less than 1 µm and not more than 100 µm, and that the diamond layer (3) has a plurality of cavities (2) extending from a portion bordering on the base material (1) in a crystal growth direction.

7. 发明授权

EP2108714B1 MICROWAVE PLASMA CVD SYSTEM 有权
标题翻译：微波等离子体CVD系统
公开(公告)号：EP2108714B1
公开(公告)日：2014-03-12
申请号：EP07707612.3
申请日：2007-01-29
申请人： Sumitomo Electric Industries, Ltd.
发明人： UEDA, Akihiko , MEGURO, Kiichi , YAMAMOTO, Yoshiyuki , NISHIBAYASHI, Yoshiki , IMAI, Takahiro
IPC分类号： C23C16/511 , C30B29/04 , H01L21/205 , H01J37/32
CPC分类号： C30B25/105 , C23C16/24 , C23C16/511 , C30B29/04 , H01J37/32192 , H01J37/32238

8. 发明公开

EP2226413A1 PROCESS FOR PRODUCING DIAMOND SINGLE CRYSTAL WITH THIN FILM AND DIAMOND SINGLE CRYSTAL WITH THIN FILM 有权
标题翻译：用于生产单单只钻石晶体薄膜金刚石单晶与薄膜
公开(公告)号：EP2226413A1
公开(公告)日：2010-09-08
申请号：EP07860225.7
申请日：2007-12-26
申请人： Sumitomo Electric Industries, Ltd.
发明人： UEDA, Akihiko , MEGURO, Kiichi , YAMAMOTO, Yoshiyuki , NISHIBAYASHI, Yoshiki , IMAI, Takahiro
IPC分类号： C30B29/04
CPC分类号： C30B29/04 , C30B25/02 , C30B25/105 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/24355 , Y10T428/30
摘要： A method for growing a low-resistance phosphorus-doped epitaxial thin film having a specific resistance of 300 Ωcm or less at 300 K on a principal surface of a {111} monocrystal substrate under conditions in which the phosphorus atom/carbon atom ratio is 3% or higher, characterized in that the principal surface has an off-angle of 0.50° or greater. The diamond monocrystal having a low-resistance phosphorus-doped diamond epitaxial thin film according to the present invention is characterized in that the thin-film surface has an off-angle of 0.50° or greater with respect to the {111} plane, and the specific resistance of the low-resistance phosphorus-doped diamond epitaxial thin film is 300 Ωcm or less at 300 K.
摘要翻译：一种用于在其中磷原子/碳原子比为条件下的{111}单晶衬底的主面在300K生长具有300©厘米或更小的电阻率的低电阻掺磷外延薄膜方法 3％或更高，其特征在于，所做的主面具有在零时50°或更大的偏离角。具有低电阻掺磷金刚石外延薄膜雅丁到本发明的金刚石单晶中做了薄膜表面的特征在于具有计划偏角的0.50°或更大的相对于{111}，并且低电阻掺磷金刚石外延薄膜的比电阻为300厘米©或更小在300 K.

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