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1. 发明公开

EP2677534A1 COMPOSITE SUBSTRATE WITH PROTECTION FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于制造半导体器件保护膜的方法复合基材
公开(公告)号：EP2677534A1
公开(公告)日：2013-12-25
申请号：EP12746625.8
申请日：2012-02-13
申请人： Sumitomo Electric Industries, Ltd.
发明人： SATOH, Issei , YOSHIDA, Hiroaki , YAMAMOTO, Yoshiyuki , HACHIGO, Akihiro , MATSUBARA, Hideki
IPC分类号： H01L21/20
CPC分类号： H01L29/2003 , H01L21/02104 , H01L21/76254
摘要： A protective-film-attached composite substrate (2Q) includes a support substrate (10), an oxide film (20) disposed on the support substrate (10), a semiconductor layer (30a) disposed on the oxide film (20), and a protective film (40) protecting the oxide film (20) by covering a portion (20s, 20t) that is a part of the oxide film (20) and covered with none of the support substrate (10) and the semiconductor layer (30a). A method of manufacturing a semiconductor device includes the steps of: preparing the protective-film-attached composite substrate (2Q); and epitaxially growing, on the semiconductor layer (30a) of the protective-film-attached composite substrate (2Q), at least one functional semiconductor layer causing an essential function of a semiconductor device to be performed. Thus, there are provided a protective-film-attached composite substrate having a large effective region where a high-quality functional semiconductor layer can be epitaxially grown, and a method of manufacturing a semiconductor device in which the protective-film-attached composite substrate is used.
摘要翻译：的保护膜相连的复合基板（2Q）包括支撑基板（10），以氧化物计的电影（20），其设置在设置于成膜氧化物（20），所述支撑基片（10），半导体层（30A），和通过覆盖的部分保护的氧化物膜 - （20）的保护膜（40）（20S，20T）确实是氧化物薄膜 - （20）的一部分，并且覆盖有没有支持衬底（10）和所述半导体层（30A ）。一种制造半导体器件的方法包括以下步骤：制备保护膜相连的复合基板（2Q）; 和外延生长，保护膜相连的复合基板的半导体层（30A）（2Q）上，至少一个功能性半导体层产生原因的半导体装置的基本功能将被执行。因此，存在提供一种具有大的有效区域，其中高品质的功能的半导体层可以外延生长在保护膜相连的复合基板，以及制造在保护膜相连的复合衬底是半导体器件的方法使用。

2. 发明公开

EP2080823A1 GROUP III ELEMENT NITRIDE SUBSTRATE, SUBSTRATE WITH EPITAXIAL LAYER, PROCESSES FOR PRODUCING THESE, AND PROCESS FOR PRODUCING SEMICONDUCTOR ELEMENT 有权转让
标题翻译： III族元素氮化物衬底，外延与多层基板，工艺用于生产和用于生产半导体元件的方法
公开(公告)号：EP2080823A1
公开(公告)日：2009-07-22
申请号：EP07829399.0
申请日：2007-10-09
申请人： Sumitomo Electric Industries, Ltd.
发明人： ISHIBASHI, Keiji , HACHIGO, Akihiro , IRIKURA, Masato , NAKAHATA, Seiji
IPC分类号： C30B29/38 , H01L21/205 , H01L21/304 , H01L33/00
摘要： A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate (1) is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface (3) is not more than 2×10 14 , and the number of silicon atoms per square centimeter of the surface (3) is not more than 3×10 13 ; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface (3) is not more than 3×10 13 , and a haze level of the surface (3) is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface (3) is not more than 2×10 14 , and a haze level of the surface (3) is not more than 5 ppm.
摘要翻译：在其上III族氮化物衬底以外延生长的良好的质量层可以被形成，并且制造的方法获得。的GaN衬底（1）是下列中的一个：III族氮化物衬底，worin每一个平方厘米表面的酸性物质的原子的数目（3）是不大于2×10 14，和硅的数量每表面（3）的平方厘米原子为不大于3×10 13; III族氮化物衬底，worin每一个平方厘米表面的硅原子的数目（3）不大于3×10 13，并且该表面的雾度水平（3）不超过5ppm; 和III族氮化物衬底，worin每一个平方厘米表面的酸性物质的原子的数目（3）是不大于2×10 14，并且该表面的雾度水平（3）不超过5ppm ，

3. 发明公开

EP2908330A1 GROUP III NITRIDE COMPOSITE SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译： GROUP III NITRIDVERBUNDSUBSTRAT，工艺为III族氮化物半导体部件用和方法
公开(公告)号：EP2908330A1
公开(公告)日：2015-08-19
申请号：EP13845267.7
申请日：2013-09-04
申请人： Sumitomo Electric Industries, Ltd.
发明人： ISHIBASHI, Keiji , HACHIGO, Akihiro , HIROMURA, Yuki , MATSUMOTO, Naoki , NAKAHATA, Seiji , NAKANISHI, Fumitake , YANAGISAWA, Takuya , UEMATSU, Koji , SEKI, Yuki , YAMAMOTO, Yoshiyuki , YOSHIZUMI, Yusuke , MIKAMI, Hidenori
IPC分类号： H01L21/02
CPC分类号： H01L21/76251 , B32B7/02 , B32B7/04 , B32B7/06 , B32B2307/20 , H01L21/76254 , H01L21/76256 , H01L29/2003 , H01L33/007 , H01L33/0079 , H01L33/025 , H01L2924/0002 , Y10T428/24298 , Y10T428/24322 , Y10T428/24331 , Y10T428/2495 , Y10T428/24975 , Y10T428/26 , Y10T428/265 , Y10T428/31 , H01L2924/00
摘要： Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate (1) includes a group III nitride film (13) and a support substrate (11) formed from a material different in chemical composition from the group III nitride film (13). The group III nitride film (13) is joined to the support substrate (11) in one of a direct manner and an indirect manner. The group III nitride film (13) has a thickness of 10 µm or more. A sheet resistance of a group III-nitride-film (13)-side main surface (13m) is 200 Ω/sq or less. A method for manufacturing the group III nitride composite substrate (1) includes the steps of: bonding the group III nitride film (13) and the support substrate (11) to each other in one of a direct manner and an indirect manner; and reducing the thickness of at least one of the group III nitride film (13) and the support substrate bonded to each other.
摘要翻译：本发明提供一种III族氮化物复合衬底具有低薄层电阻和以高产率，和用于制造其的方法，以及用于制造使用该III族氮化物复合衬底的III族氮化物半导体器件的方法制造。 III族氮化物复合衬底（1）包括：III族氮化物膜（13）和从在化学组成不同的材料形成为从所述III族氮化物膜（13）的支撑基板（11）。 III族氮化物的电影（13）以直接的方式中的一个，并间接地接合到所述支撑基板（11）。 III族氮化物膜（13）的厚度为10微米或更大。一III族氮化物膜（13）侧的主面（13米）的薄层电阻为200©/ sq或更小。一种用于制造III族氮化物复合衬底（1）的方法包括以下步骤：贴合III族氮化物的电影（13）和以直接的方式中的一个，并间接方式与支撑基板（11）彼此连接; 并降低了III族氮化物的电影（13）和键合到海誓山盟支撑基板中的至少一个的厚度。

4. 发明公开

EP2562789A1 METHOD FOR PRODUCING COMPOSITE SUBSTRATE 审中-公开
标题翻译： VERFAHREN ZUR HERSTELLUNG EINES VERBUNDSUBSTRATS
公开(公告)号：EP2562789A1
公开(公告)日：2013-02-27
申请号：EP11771989.8
申请日：2011-04-19
申请人： Sumitomo Electric Industries, Ltd.
发明人： MAEDA, Yoko , SATO, Fumitaka , HACHIGO, Akihiro , NAKAHATA, Seiji
IPC分类号： H01L21/02 , H01L27/12 , H01L33/32
CPC分类号： H01L29/0603 , H01L21/76254 , H01L29/2003 , H01L33/0079
摘要： Affords a method of manufacturing a composite substrate in which the joining strength between a first substrate composed of a nitride compound semiconductor and a second substrate is high. A composite-substrate manufacturing method of the present invention includes: a step of carrying out implantation of ions through a surface of a bulk substrate composed of the nitride compound semiconductor; a step of obtaining a bonded substrate by bonding the bulk substrate and the second substrate together; a step of elevating the temperature of the bonded substrate to a first temperature; a step of sustaining the first temperature for a fixed time; and a step of producing a composite substrate by severing, in such as way as to leave the first substrate as a portion of the bulk substrate atop the second substrate, the remaining portion of the bulk substrate from the bonded substrate; characterized in that letting the first temperature be T 1 °C, the thermal expansion coefficient of the first substrate be A × 10 -6 /°C, and the thermal expansion coefficient of the second substrate be B × 10 -6 /°C, the following formula (I) is satisfied.
摘要翻译：提供一种制造复合衬底的方法，其中由氮化物半导体和第二衬底组成的第一衬底之间的接合强度高。本发明的复合基板的制造方法包括：通过由氮化物半导体构成的块状基板的表面进行离子注入的工序; 通过将本体基板和第二基板结合在一起而获得接合基板的步骤; 将键合衬底的温度升高到第一温度的步骤; 维持固定时间的第一个温度的步骤; 以及通过以将离开第一基板作为体基板的一部分在第二基板顶部的方式切断复合基板的步骤，从接合基板将本体基板的剩余部分留下; 其特征在于，使第一温度为T 1℃，第一基板的热膨胀系数为A×10 -6 /℃，第二基板的热膨胀系数为B×10 -6 /℃，满足下式（I）。

5. 发明公开

EP2560190A1 GROUP III NITRIDE COMPOSITE SUBSTRATE 审中-公开
标题翻译： GRUPPE-III-NITRID-VERBUNDSUBSTRAT
公开(公告)号：EP2560190A1
公开(公告)日：2013-02-20
申请号：EP11839646.4
申请日：2011-11-07
申请人： Sumitomo Electric Industries, Ltd.
发明人： SATOH, Issei , YOSHIDA, Hiroaki , YAMAMOTO, Yoshiyuki , HACHIGO, Akihiro , MATSUBARA, Hideki
IPC分类号： H01L21/02 , H01L27/12
CPC分类号： H01L21/76254 , H01L21/0242 , H01L21/02488 , H01L21/0254
摘要： A group III nitride composite substrate (1) includes a support substrate (10), an oxide film (20) formed on the support substrate (10), and a group III nitride layer (30a) formed on the oxide film (20). The oxide film (20) may be a film selected from the group consisting of a TiO 2 film and a SrTiO 3 film, and an impurity may be added to the oxide film. Accordingly, the group III nitride composite substrate having a high bonding strength between the support substrate and the group III nitride layer is provided.
摘要翻译： III族氮化物复合衬底（1）包括支撑衬底（10），形成在支撑衬底（10）上的氧化膜（20）和形成在氧化物膜（20）上的III族氮化物层（30a）。氧化物膜（20）可以是选自TiO 2膜和SrTiO 3膜的膜，并且可以向氧化膜中添加杂质。因此，提供了在支撑基板和III族氮化物层之间具有高结合强度的III族氮化物复合基板。

7. 发明公开

EP2395134A1 GaN SUBSTRATE AND METHOD OF ITS MANUFACTURE, METHOD OF MANUFACTURING GaN LAYER-BONDED SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译： GaN衬底和工艺的生产方法与用于生产半导体器件的GaN层相关底及其制造方法
公开(公告)号：EP2395134A1
公开(公告)日：2011-12-14
申请号：EP09839702.9
申请日：2009-11-13
申请人： Sumitomo Electric Industries, Ltd.
发明人： HACHIGO, Akihiro
IPC分类号： C30B29/38 , C30B31/20 , H01L21/205 , H01L33/32
CPC分类号： C30B29/403 , C30B29/406 , C30B33/00 , H01L21/76254
摘要： The present invention makes available a GaN substrate, and a method of its manufacture, that, with minimal machining allowances, facilitates consistent machining, and makes available a method of manufacturing a GaN layer-bonded substrate, and a semiconductor device, utilizing the GaN substrate. A GaN substrate 20 of the present invention includes a first region 20j and a second region 20i that has a higher Ga/N atomic ratio than that of the first region 20j; wherein the second region 20i widens from a depth D - Δ D to a depth D + Δ D centered about a predetermined depth D from one major surface 20m, the difference between the Ga/N atomic ratio at the depth D and the Ga/N atomic ratio at a depth D + 4Δ D or greater in the first region 20j being three times the difference between the Ga/N atomic ratio at the depth D + Δ D and the Ga/N atomic ratio at the depth D + 4Δ D or greater in the first region 20j, and wherein the ratio of the Ga/N atomic ratio in the second region 20i to the Ga / N atomic ratio at the depth D + 4Δ D or greater in the first region 20j is at least 1.05.
摘要翻译：本发明使得可用的GaN衬底，以及其制造方法，即，用最小机械加工余量，便于一致加工，并使得可用的制造GaN层键合的衬底的方法，和半导体器件，利用该GaN衬底，甲GaN衬底的本发明的20包括第一区域和20J 20I那样具有比第一区域20J的更高的Ga / N的原子比的第二区域; worin第二区域20i中从深度D加宽 - “D至深度D +” D为中心的预定深度D从一个主面20m，在深度D和镓/ N中的Ga / N原子比之间的差在深度D + 4“D或更大的第一区域20j中在深度D +是三次中的Ga / N原子比之间的差” D和深度D + 4“中的Ga / N原子比原子比 D或更大的第一区域20j中，和在第一区域20J worin在第二区域20I到的Ga / N的原子比中的Ga / N原子比在深度D + 4“D或更大的比率为至少 1:05。

8. 发明公开

EP2381487A1 SUBSTRATE FOR LIGHT-EMITTING ELEMENT 审中-公开
标题翻译： SUBSTRATFÜRLICHTEMITTIGENDERELEMENT
公开(公告)号：EP2381487A1
公开(公告)日：2011-10-26
申请号：EP09838362.3
申请日：2009-11-11
申请人： Sumitomo Electric Industries, Ltd.
发明人： HACHIGO, Akihiro , NAKAMURA, Takao , YOSHIMURA, Masashi
IPC分类号： H01L33/00 , H01L21/02 , H01L21/205 , H01S5/323
CPC分类号： C30B25/18 , C30B29/403 , H01L33/007
摘要： The present invention is a minimal-defect light-emitting device substrate that enables emitted light to issue from a device's substrate side, and is a light-emitting device 100 substrate furnished with a transparent substrate 10 that is transparent to light of wavelengths between 400 nm and 600 nm, inclusive, and a nitride-based compound semiconductor thin film 1 c formed onto one of the major surfaces of the transparent substrate 10 by a join. Letting the thermal expansion coefficient of the transparent substrate along a direction perpendicular to the major surface of the transparent substrate be α 1 , and the thermal expansion coefficient of the nitride-based compound semiconductor thin film be α 2 , then (α 1 - α 2 ) / α 2 is between -0.5 and 1.0, inclusive, and at up to 1200°C the transparent substrate does not react with the nitride-based compound semiconductor thin film 1 c . The absolute index of refraction of the transparent substrate 10 preferably is between 60% and 140%, inclusive, of the absolute index of refraction of the nitride-based compound semiconductor thin film.
摘要翻译：本发明是使发射光能够从器件的衬底侧发出的最小缺陷发光器件衬底，并且是配置有透明衬底10的发光器件100衬底，透明衬底10对波长在400nm之间的光是透明的和600nm，以及通过接合形成在透明基板10的一个主表面上的氮化物系化合物半导体薄膜1c。使透明基板沿着与透明基板的主面垂直的方向的热膨胀系数为±1，氮化物系半导体薄膜的热膨胀系数为±2，则（±1〜±2 ）/±2在-0.5和1.0之间，并且在高达1200℃下，透明衬底不与氮化物基化合物半导体薄膜1c反应。透明基板10的绝对折射率优选为氮化物系化合物半导体薄膜的绝对折射率的60％〜140％。

9. 发明公开

EP1309085A1 SURFACE ACOUSTIC WAVE DEVICE AND SUBSTRATE THEREOF 审中-公开
标题翻译：面波成分和基质THEREFOR
公开(公告)号：EP1309085A1
公开(公告)日：2003-05-07
申请号：EP01932282.5
申请日：2001-05-25
申请人： Sumitomo Electric Industries, Ltd.
发明人： NAKAHATA, Hideaki , HACHIGO, Akihiro , TATSUMI, Natsuo , IMAI, Takahiro , SHIKATA, Shinichi
IPC分类号： H03H9/25
CPC分类号： H03H9/02582 , H03H9/02574
摘要： Provided are a substrate for a surface-acoustic-wave device and a surface-acoustic-wave device, in which an intermediate layer for controlling crystal characteristics of a piezoelectric layer does not easily separate from a diamond layer.
A surface-acoustic-wave device substrate 20 and a surface-acoustic-wave device 10, according to the present invention, comprises a diamond layer 22, an intermediate layer 24 disposed on the diamond layer 22, and a piezoelectric layer 26 disposed on the intermediate layer 24, the piezoelectric layer 26 being made of LiNbO 3 or LiTaO 3 , the intermediate layer 24 being made of AlN.

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