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41. 发明公开

EP4163951A1 RADIO-FREQUENCY ANTENNA 审中-实审
公开(公告)号：EP4163951A1
公开(公告)日：2023-04-12
申请号：EP22210192.5
申请日：2021-04-14
申请人： EMD Corporation , Tomoegawa Co., Ltd.
发明人： Ebe, Akinori , Tsuda, Hajime , Moriuchi, Hideki
IPC分类号： H01J37/32 , H01Q1/00
摘要： [OBJECT] To provide a radio-frequency antenna through which a high amount of current can be efficiently passed even at a radio-frequency level for plasma generation, as well as a plasma processing device utilizing the radio-frequency antenna.
[MEANS FOR SOLVING PROBLEM] A radio-frequency antenna (10) according to the present invention includes a metal fiber sheet. A plasma processing device according to the present invention includes: a vacuum container (21) including a wall (211) having an opening (213); a radio-frequency antenna (10) including a metal fiber sheet and located at the opening (213); and a dielectric protection plate (12) located closer to the interior of the vacuum container (21) than the radio-frequency antenna (10) and configured to close the opening (213) in a gas-tight manner. The radio-frequency antenna (10) including a metal fiber sheet has a larger surface area and an accordingly lower impedance to a radio-frequency current than a radio-frequency antenna including a metal plate having the same outer shape. Therefore, it allows a radio-frequency current commonly used for plasma generation (e.g., at a frequency of 13.56 MHz) to be more efficiently passed through in large amounts.

42. 发明授权

EP2345750B1 THIN FILM-FORMING SPUTTERING SYSTEMS 有权转让
公开(公告)号：EP2345750B1
公开(公告)日：2019-01-02
申请号：EP09809534.2
申请日：2009-08-25
申请人： EMD Corporation
发明人： SETSUHARA, Yuichi , EBE, Akinori , HAN, Jeon Geon
IPC分类号： C23C14/34 , H05H1/46 , H01J37/32 , H01J37/34 , C23C14/35

43. 发明授权

EP2784823B1 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：EP2784823B1
公开(公告)日：2018-05-23
申请号：EP14168446.4
申请日：2008-12-19
申请人： Asahi Kasei EMD Corporation
发明人： Koricic, Marko , Suligoj, Tomislav , Mochizuki, Hidenori , Morita, Soichi
IPC分类号： H01L29/735 , H01L21/331 , H01L21/8249 , H01L21/8222 , H01L21/8248 , H01L27/06 , H01L29/08 , H01L29/10 , H01L21/265
CPC分类号： H01L27/0623 , H01L21/2257 , H01L21/26513 , H01L21/2658 , H01L21/26586 , H01L21/8249 , H01L29/0808 , H01L29/1008 , H01L29/1045 , H01L29/6625 , H01L29/665 , H01L29/6659 , H01L29/735
摘要： A configuration of a lateral transistor suited for the hybrid-integration (BiCMOS) of a high-performance lateral transistor (HCBT) and a CMOS transistor, and a method for manufacturing the lateral transistor are provided. A semiconductor device includes a HCBT 100 and a CMOS transistor 200 hybrid-integrated therein. The HCBT 100 has an open region 21 opened by etching a device isolating oxide film 6 surrounding an n-hill layer 11, an emitter electrode 31A and a collector electrode 31B each of which is formed in the open region 21 and is composed of a polysilicon film having such a thickness as to expose the n-hill layer 11 exposed by etching the device isolating oxide film, and an ultrathin oxide film 24 covering at least a part of the n-hill layer 11. The ultrathin oxide film 24 functions as a protective film for protecting the n-hill layer 11 from being etched when the polysilicon film is etched to form the emitter electrode 31A and the collector electrode 31B.

44. 发明授权

EP2224478B1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权转让
公开(公告)号：EP2224478B1
公开(公告)日：2018-01-24
申请号：EP08865744.0
申请日：2008-12-19
申请人： Asahi Kasei EMD Corporation
发明人： KORICIC, Marko , SULIGOJ, Tomislav , MOCHIZUKI, Hidenori , MORITA, Soichi
IPC分类号： H01L29/735 , H01L21/331 , H01L21/8249 , H01L21/8222 , H01L21/8248 , H01L27/06 , H01L29/08 , H01L29/10 , H01L21/265 , H01L21/225
CPC分类号： H01L27/0623 , H01L21/2257 , H01L21/26513 , H01L21/2658 , H01L21/26586 , H01L21/8249 , H01L29/0808 , H01L29/1008 , H01L29/1045 , H01L29/6625 , H01L29/665 , H01L29/6659 , H01L29/735
摘要： A configuration of a lateral transistor suited for the hybrid-integration (BiCMOS) of a high-performance lateral transistor (HCBT) and a CMOS transistor, and a method for manufacturing the lateral transistor are provided. A semiconductor device includes a HCBT 100 and a CMOS transistor 200 hybrid-integrated therein. The HCBT 100 has an open region 21 opened by etching a device isolating oxide film 6 surrounding an n-hill layer 11, an emitter electrode 31A and a collector electrode 31B each of which is formed in the open region 21 and is composed of a polysilicon film having such a thickness as to expose the n-hill layer 11 exposed by etching the device isolating oxide film, and an ultrathin oxide film 24 covering at least a part of the n-hill layer 11. The ultrathin oxide film 24 functions as a protective film for protecting the n-hill layer 11 from being etched when the polysilicon film is etched to form the emitter electrode 31A and the collector electrode 31B.

45. 发明授权

EP1788351B1 OSCILLATION TYPE INERTIAL FORCE SENSOR 有权
标题翻译：振荡型惯性力传感器
公开(公告)号：EP1788351B1
公开(公告)日：2017-05-03
申请号：EP05782322.1
申请日：2005-09-08
申请人： MURATA MANUFACTURING CO., LTD. , Asahi Kasei EMD Corporation
发明人： MORI, Akira , NAGAI, Iku , SAWADA, Kazushige , NARITA, Makoto
IPC分类号： G01C19/56 , G01C19/5776
CPC分类号： G01C19/5776

46. 发明授权

EP2131398B1 COMPOUND SEMICONDUCTOR LAMINATE, PROCESS FOR PRODUCING THE COMPOUND SEMICONDUCTOR LAMINATE, AND SEMICONDUCTOR DEVICE 有权
标题翻译：半导体复合层压板，一种用于制造半导体层积体和半导体器件
公开(公告)号：EP2131398B1
公开(公告)日：2015-05-20
申请号：EP08738698.3
申请日：2008-03-21
申请人： Asahi Kasei EMD Corporation
发明人： SHIBATA, Yoshihiko , MIYAHARA, Masatoshi
IPC分类号： H01L29/26 , C30B23/02 , C30B29/40 , C30B25/18 , H01L21/20 , H01L29/20 , H01L43/06 , H01L43/08
CPC分类号： H01L29/20 , C30B23/025 , C30B25/18 , C30B29/40 , C30B29/406 , H01L21/02381 , H01L21/02439 , H01L21/0254 , H01L21/02549 , H01L29/201 , H01L29/267 , H01L43/065

47. 发明公开

EP2784823A3 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：EP2784823A3
公开(公告)日：2015-02-25
申请号：EP14168446.4
申请日：2008-12-19
申请人： Asahi Kasei EMD Corporation
发明人： Koricic, Marko , Suligoj, Tomislav , Mochizuki, Hidenori , Morita, Soichi
IPC分类号： H01L29/735 , H01L21/331 , H01L21/8249 , H01L21/8222 , H01L21/8248 , H01L27/06 , H01L29/08 , H01L29/10
CPC分类号： H01L27/0623 , H01L21/2257 , H01L21/26513 , H01L21/2658 , H01L21/26586 , H01L21/8249 , H01L29/0808 , H01L29/1008 , H01L29/1045 , H01L29/6625 , H01L29/665 , H01L29/6659 , H01L29/735
摘要： A semiconductor device in which a lateral bipolar transistor and a CMOS transistor are hybrid-integrated, and the lateral bipolar transistor includes an open region opened in a device isolating oxide film surrounding an active region; a polysilicon film formed on the open region; and a protective film covering at least a part of a peripheral surface of the active region exposed by opening the open region in the device isolating oxide film, wherein the polysilicon film has such a thickness as to expose the active region out of the polysilicon film, and the protective film is a film for preventing the active region from being etched when the polysilicon film is etched to the thickness.

48. 发明授权

EP2019488B1 DRIVING DEVICE 有权
标题翻译：驾驶装置
公开(公告)号：EP2019488B1
公开(公告)日：2014-12-24
申请号：EP07743381.1
申请日：2007-05-15
申请人： Asahi Kasei EMD Corporation
发明人： KAIHO, Toshio , MACHIDA, Junichi
IPC分类号： H03K17/687 , H03K5/06 , H03K17/284 , H03K7/08
CPC分类号： H03F3/387 , H03F1/3211 , H03F1/34 , H03F3/2173 , H03F3/45475 , H03F2200/351 , H03F2203/45138 , H03F2203/45526 , H03K5/06 , H03K7/08 , H03K17/284

49. 发明授权

EP2023398B1 Infrared sensor IC, and infrared sensor and manufacturing method thereof 有权
标题翻译：红外线传感器IC和它们的红外线传感器及其制造方法
公开(公告)号：EP2023398B1
公开(公告)日：2014-10-22
申请号：EP08019935.9
申请日：2004-09-09
申请人： Asahi Kasei EMD Corporation
发明人： Ueno, Koichiro , Kuze, Naohiro , Moriyasu, Yoshitaka , Nagase, Kazuhiro
IPC分类号： H01L31/0304 , H01L31/0203 , H01L27/144
CPC分类号： H01L31/035236 , B82Y20/00 , G01J1/02 , G01J1/0204 , G01J5/02 , G01J5/0215 , G01J5/04 , G01J5/045 , G01J5/20 , G01J2001/0276 , H01L31/1035 , H01L2224/48137 , H01L2224/48145 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2924/00012
摘要： An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), and then, the compound semiconductor sensor (2) and an integrated circuit (3), which processes an electrical signal output by the compound semiconductor sensor (2) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.

50. 发明公开

EP2753154A1 ANTENNA FOR PLASMA PROCESSING APPARATUS, AND PLASMA PROCESSING APPARATUS USING ANTENNA 审中-公开
标题翻译：天线FÜREINE PLASMABEHANDLUNGSVORRICHTUNG UND PLASMABEHANDLUNGSVORRICHTUNG MIT DER ANTENNE
公开(公告)号：EP2753154A1
公开(公告)日：2014-07-09
申请号：EP11871785.9
申请日：2011-08-30
申请人： EMD Corporation
发明人： SETSUHARA, Yuichi , EBE, Akinori
IPC分类号： H05H1/46 , C23C16/44 , C23C16/509 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32651 , C23C14/358 , C23C16/509 , H01J37/32082 , H01J37/321 , H01J37/3211 , H01J2237/0266 , H05H1/46 , H05H2001/4667
摘要： Provided is a radio-frequency antenna with which the blocking or weakening of a radio-frequency induction electric field will not occur even if a thin-film material deposits on the antenna surface. A radio-frequency antenna 10 includes a linear antenna conductor 13, a dielectric protective pipe 14 provided around the antenna conductor 13, and a deposit shield 15 provided around the protective pipe 14, the deposit shield 15 covering at least one portion of the protective pipe 14 and having at least one opening 153 on any line extending along the length of the antenna conductor 13. Although the thin-film material adheres to the surfaces of the protective pipe and the deposit shield, the deposited substance has at least one discontinuous portion in the longitudinal direction of the antenna conductor. Therefore, in the case where the thin-film material is electrically conductive, the blocking of the radio-frequency induction electric field is prevented. In the case where the thin-film material is not electrically conductive, an attenuation in the intensity of the radio-frequency induction electric field is suppressed.
摘要翻译：提供一种射频天线，即使薄膜材料沉积在天线表面上也不会发生射频感应电场的阻塞或弱化。射频天线10包括线状天线导体13，设置在天线导体13周围的介质保护管14和设置在保护管14周围的沉积屏蔽15，沉积屏蔽15覆盖保护管的至少一部分 14，并且在沿着天线导体13的长度延伸的任何线上具有至少一个开口153.尽管薄膜材料粘附到保护管和沉积屏蔽的表面上，但沉积物质具有至少一个不连续部分天线导体的纵向。因此，在薄膜材料导电的情况下，防止了射频感应电场的阻塞。在薄膜材料不导电的情况下，抑制了射频感应电场强度的衰减。

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