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    • 1. 发明公开
    • SPUTTERING DEVICE
    • EP4333564A1
    • 2024-03-06
    • EP22795770.1
    • 2022-04-26
    • EMD CorporationOsaka Research Institute of Industrial Science and TechnologyOgawa, Soichi
    • EBE, AkinoriKONDO, YusukeKAKEHI, YoshiharuSATOH, KazuoIKUHARA, ShiroIWASAKI, ShinichiOGAWA, Soichi
    • H05H1/46C23C14/34C23C14/35
    • A sputtering apparatus (10) includes: a first target holder (111) and a second target holder (112) holding a first target (T1) and a second target (T2) respectively such that their surfaces face each other; a substrate holder (16) provided on a side of a plasma generation region (R) which is a region between the first target (T1) and the second target (T2) respectively held by the first target holder (111) and the second target holder (112); a first main magnetic field generation unit (121) and a second main magnetic field generation unit (122) respectively provided on the back surface sides of the first target holder (111) and the second target holder (112), and configured to generate a first main magnetic field and a second main magnetic field respectively on surfaces of the first target (T1) and the second target (T2) held, in which magnets are disposed such that opposite poles face each other; a power supply configured to generate an electric field in a plasma generation region (R) by applying predetermined potentials to the first target holder (111) and the second target holder (112); a radio-frequency electromagnetic field generation unit (17) configured to generate a radio-frequency electromagnetic field in the plasma generation region (R), which is provided on a side of the plasma generation region (R) facing the substrate holder (16) with the plasma generation region (R) between them; and a plasma source gas introduction unit (15) configured to introduce a plasma source gas into the plasma generation region (R), wherein means for generating a magnetic field does not exist at the ends of the first target holder (111) and the second target holder (112) on a side of radio-frequency electromagnetic field generation unit (17).
    • 2. 发明公开
    • PLASMA GENERATING DEVICE
    • EP4152897A1
    • 2023-03-22
    • EP21805021.9
    • 2021-05-07
    • EMD Corporation
    • EBE, Akinori
    • H05H1/24F01N3/028
    • Provided is a dielectric barrier discharge type plasma generator that is provided in a gas treatment apparatus for generating plasma by ionizing gas flowing in a gas flow path and can prevent electric leakage and undesirable discharge from occurring. The plasma generator 10 includes an AC power supply 14, a power supply electrode 111 and a ground electrode 112, one of which is disposed in a gas flow path and the other of which is a conductive wall constituting the gas flow path, an inflexible connection member 13 configured to electrically connect the AC power supply 14 and the power supply electrode 111, and an insulating material (power supply side insulating material 121, ground side insulating material 122) covering a side of one of the power supply electrode 111 and the ground electrode 112, the side facing the other electrode. By using the inflexible connection member 13, even if vibration is transmitted from the gas flowing in the gas flow path to the connection member 13 via the power supply electrode 111, the connection member 13 does not unexpectedly come into contact with or does not come close to a member other than the power supply electrode in the plasma generator 10, so that it is possible to prevent electric leakage and undesirable discharge from occurring.
    • 3. 发明授权
    • MAGNETIC SENSOR AND ITS SENSITIVITY MEASURING METHOD
    • 磁性传感器及其灵敏度测量方法
    • EP2131205B1
    • 2018-05-02
    • EP08722634.6
    • 2008-03-21
    • Asahi Kasei EMD Corporation
    • YAMASHITA, MasayaYAMAGATA, Yo
    • G01R33/07G01R33/02G01R35/00
    • G01R33/07G01R33/0206G01R35/005
    • The present invention relates to a magnetic sensor with a sensitivity measuring function and a sensitivity measuring device and a method thereof having a magnetic substance on a semiconductor substrate provided with a plurality of Hall elements. Magnetic sensitivity surfaces (31) detect flux density, and a switching unit (32) extracts magnetic field intensity information of each axis, and inputs it to a sensitivity calculating unit (34) via an amplifier unit (33). The sensitivity calculating unit (34) calculates the sensitivity from the magnetic field intensity information about the individual axes from the magnetic sensitivity surfaces (31). The sensitivity calculating unit includes an axial component analyzing unit (34a) for analyzing the flux density from the magnetic sensitivity surfaces (31) into magnetic components of the individual axes; a sensitivity decision unit (34b) for deciding the sensitivity by comparing the individual axial components of the magnetic field intensity from the axial component analyzing unit (34a) with a reference value; and a sensitivity correction unit (34c) for carrying out sensitivity correction in accordance with the sensitivity information from the sensitivity decision unit (34b). A sensor diagnostic unit (39) carries out self-diagnosis of the validity of the sensitivity of the magnetic sensor according to the sensitivity information, and performs self-sensitivity correction (adjustment).
    • 6. 发明公开
    • PLASMA TREATMENT DEVICE
    • PLASMABEHANDLUNGSVORRICHTUNG
    • EP2602813A1
    • 2013-06-12
    • EP11814649.7
    • 2011-08-02
    • Osaka UniversityEMD Corporation
    • SETSUHARA, YuichiEBE, Akinori
    • H01L21/205C23C16/509H01L21/3065H05H1/46
    • H01L21/02104C23C16/24C23C16/509H01J37/3211H01J37/32357H01J37/32422H01J37/32568H01J37/32623H01J37/32834H01J37/32899H01J37/32954H01L21/465H05H1/46H05H2001/4667
    • The problem addressed by the present invention is to provide a plasma processing device capable of easily controlling the energy distribution of electrons in a cloud of plasma according to the kind of gas molecules or their dissociation energy. A plasma processing device 10 according to the present invention includes a plasma processing chamber 1l, a plasma producing chamber 12 communicating with the plasma processing chamber 11, a radio-frequency antenna 16 for producing plasma, a plasma control plate 17 for controlling the energy of electrons in the plasma, as well as an operation rod 171 and a moving mechanism 172 for regulating the position of the plasma control plate 17. In this plasma processing device 10, the energy distribution of the electrons of the plasma produced in the plasma producing chamber 12 can be controlled by regulating the distance between the radio-frequency antenna 16 and the plasma control plate 17 by simply moving the operation rod 171 in its longitudinal direction by the moving mechanism 172. Therefore, a plasma process suitable for the kind of gas molecules to be dissociated and/or their dissociation energy can be easily performed.
    • 本发明解决的问题是提供一种等离子体处理装置,其能够根据气体分子的种类或其解离能容易地控制等离子体云中的电子的能量分布。 根据本发明的等离子体处理装置10包括等离子体处理室11,与等离子体处理室11连通的等离子体产生室12,用于产生等离子体的射频天线16,用于控制能量的等离子体控制板17 等离子体中的电子,以及用于调节等离子体控制板17的位置的操作杆171和移动机构172.在该等离子体处理装置10中,等离子体产生室中产生的等离子体的电子的能量分布 可以通过简单地通过移动机构172将操作杆171沿其纵向方向移动来调节射频天线16和等离子体控制板17之间的距离来控制。因此,适合于气体分子种类的等离子体处理 被解离和/或其解离能可以容易地进行。
    • 7. 发明公开
    • Voltage controlled oscillator
    • Spannungsgesteuerter Oszillator
    • EP2482447A1
    • 2012-08-01
    • EP12158799.2
    • 2006-11-29
    • Asahi Kasei EMD Corporation
    • Yamamoto, Tomoaki
    • H03B5/32H03B5/36
    • H03B5/366H03B2200/0092H03C3/08
    • The present invention provides a voltage controlled oscillator having a wide frequency variation range and an oscillation frequency that shows favorable linearity with respect to control voltage. The present invention includes an amplifier circuit 21, a piezoelectric element 22 connected in parallel to the amplifier circuit 21 and forming a feedback loop, variable capacitive elements 24 and 25 respectively connected to an input terminal and an output terminal of the amplifier circuit 21 and having a capacitance value that is dependent on control voltage, and an analog operation circuit 26 that generates a control voltage Vcs based on an inputted control voltage Vc. In this arrangement, the control voltage Vc is applied to the variable capacitive element 24 and the control voltage Vcs generated by the analog operation circuit 26 is applied to the variable capacitive element 25.
    • 本发明提供了一种具有宽的频率变化范围和相对于控制电压具有良好线性度的振荡频率的压控振荡器。 本发明包括放大器电路21,与放大器电路21并联连接并形成反馈回路的压电元件22,分别连接到放大器电路21的输入端子和输出端子的可变电容元件24和25,并具有 取决于控制电压的电容值,以及基于输入的控制电压Vc产生控制电压Vcs的模拟运算电路26。 在这种布置中,控制电压Vc被施加到可变电容元件24,并且由模拟运算电路26产生的控制电压Vcs被施加到可变电容元件25。
    • 9. 发明授权
    • AUTOMATIC GAIN CONTROL CIRCUIT
    • 自动增益控制电路
    • EP1615430B1
    • 2011-08-10
    • EP04726023.7
    • 2004-04-06
    • Asahi Kasei EMD Corporation
    • SASAHARA, HideakiUKAJI, NobuyoshiISHIHARA, Ken
    • H04N5/52
    • H04N5/52H03M1/183
    • An AGC control section (110) has a first operation mode for controlling the gain of a variable gain amplifier (103) so that the amplitude of a synchronization signal measured by a synchronization signal amplitude measurement circuit (108) is maintained constant and a second operation mode not increasing the gain even if the amplitude of the synchronization signal measured by a video signal processing circuit (109) is smaller than a predetermined first reference value and reducing the gain of the variable gain amplifier (103) only when the video signal amplitude has become greater than a predetermined second reference value. Here, when the synchronization signal amplitude is smaller than the predetermined first reference value and the video signal amplitude is greater than the predetermined second reference value while the AGC control section (110) is operating in the first operation mode, the mode is switched to the second operation mode. On the other hand, when the synchronization signal amplitude has become smaller than the predetermined first value while the AGC control section (110) is operating in the second operation mode, the mode is switched from the second operation mode to the first operation mode.