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1. 发明公开

EP4309174A1 LOW RA NARROW BASE MODIFIED DOUBLE MAGNETIC TUNNEL JUNCTION STRUCTURE 审中-实审
公开(公告)号：EP4309174A1
公开(公告)日：2024-01-24
申请号：EP22712809.7
申请日：2022-02-24
申请人： International Business Machines Corporation
发明人： WORLEDGE, Daniel , HU, Guohan
IPC分类号： G11C11/16 , H01L43/08

3. 发明公开

EP4238133A1 MTJ-BASED ANALOG MEMORY DEVICE 审中-实审
公开(公告)号：EP4238133A1
公开(公告)日：2023-09-06
申请号：EP21791377.1
申请日：2021-10-14
申请人： International Business Machines Corporation
发明人： HOUSSAMEDDINE, Dimitri , FROUGIER, Julien , CHENG, Kangguo , XIE, Ruilong
IPC分类号： H01L27/22 , G11C11/16 , H01L43/08

4. 发明公开

EP4207252A1 METHOD FOR ETCHING MRAM MAGNETIC TUNNEL JUNCTION 审中-实审
公开(公告)号：EP4207252A1
公开(公告)日：2023-07-05
申请号：EP21893372.9
申请日：2021-06-17
申请人： Jiangsu Leuven Instruments Co. Ltd
发明人： LI, Jiahe , YANG, Yuxin , PENG, Taiyan , XU, Kaidong
IPC分类号： H01L21/3065 , H01L43/08
摘要： Disclosed is a method for etching an MRAM magnetic tunnel junction. The method comprises: Step 1, performing a main etching step with an etching amount of t1 by using ion beam etching and/or reactive ion etching, wherein the direction angle of an ion beam is 10°-60°, and the bias voltage of the reactive ion etching is 400V-1000V; Step 2, performing a cleaning step with an etching amount of t2, wherein the bias voltage of the reactive ion etching is 50V-400V, the pulse duty ratio is 5%-50%, t1:t2≥0.5, and after the cleaning step is completed, the etching morphology on a bottom electrode or a bottom dielectric layer is square trench; and Step 3, performing in-situ protection, involving performing in-situ protection on a coating film. In the present invention, RIE is combined with IBE, and by means of the arrangement of an etching sequence and the selection of etching parameters, the method is suitable for the etching of non-dense magnetic tunnel junctions, while the etching effect of small-sized dense magnetic tunnel junctions is significantly improved. Therefore, the problems of the selection ration and the profile during dense pattern etching being low are solved. Furthermore, a trench is etched to be of a square, such that the TMR of an MTJ junction can be substantially improved, the service life thereof can be substantially prolonged, and bottom depositions is eliminated.

5. 发明公开

EP4084102A1 MAGNETIC SENSOR 审中-实审
公开(公告)号：EP4084102A1
公开(公告)日：2022-11-02
申请号：EP20904817.2
申请日：2020-12-04
申请人： TDK Corporation
发明人： KUROKI, Koji , ONODERA, Ikuhito , HARAKAWA, Osamu , KAMENO, Makoto
IPC分类号： H01L43/08 , G01R33/09
摘要： To increase, in a magnetic sensor having a magnetoresistive strip and a ferromagnetic film, a magnetic bias to be applied to a magnetoresistive element by magnetically coupling the magnetoresistive strip and ferromagnetic film. A magnetic sensor 1 includes a magnetoresistive strip S, an insulating film 13 that covers the magnetoresistive strip S, and ferromagnetic films M1 and M2 formed on the insulating film 13 and arranged in the x-direction through a magnetic gap G extending in the y-direction. The ferromagnetic films M1 and M2 overlap a plurality of hard magnetic members H through the insulating film 13. This allows two adjacent hard magnetic members H to be magnetically coupled through the ferromagnetic films M1 and M2. This makes it possible to increase the magnetic bias to be applied to a magnetoresistive element R without involving an increase in the size of the hard magnetic member H.

6. 发明授权

EP3640942B1 FERROMAGNETIC TUNNEL JUNCTION, SPINTRONICS DEVICE USING SAME, AND METHOD FOR MANUFACTURING FERROMAGNETIC TUNNEL JUNCTION 有权
公开(公告)号：EP3640942B1
公开(公告)日：2022-09-14
申请号：EP18816984.1
申请日：2018-06-08
发明人： SUKEGAWA, Hiroaki , Ikhtiar , KASAI, Shinya , HONO, Kazuhiro , XU, Xiandong
IPC分类号： G11B5/39 , H01L21/8239 , H01L27/105 , H01L43/08 , G11C11/16 , H01L43/10 , H01L43/12 , G01R33/09

7. 发明授权

EP2724344B1 SPIN-TORQUE TRANSFER MAGNETIC MEMORY CELL STRUCTURES WITH SYMMETRIC SWITCHING AND SINGLE DIRECTION CURRENT PROGRAMMING 有权
公开(公告)号：EP2724344B1
公开(公告)日：2022-08-31
申请号：EP12731821.0
申请日：2012-06-15
发明人： LIU, Jun
IPC分类号： G11C11/16 , H01L27/22 , H01L43/08

8. 发明授权

EP3671874B1 ZERO-FIELD SWITCHING FOR SOT TECHNOLOGY 有权
公开(公告)号：EP3671874B1
公开(公告)日：2022-06-22
申请号：EP18215612.5
申请日：2018-12-21
发明人： GARELLO, Kevin , KAR, Gouri Sankar
IPC分类号： H01L43/02 , H01L43/08 , H01L43/12

9. 发明公开

EP4012708A1 FABRICATION PROCESS AND LAYOUT FOR MAGNETIC SENSOR ARRAYS 审中-公开
公开(公告)号：EP4012708A1
公开(公告)日：2022-06-15
申请号：EP21215463.7
申请日：2012-01-31
申请人： Everspin Technologies, Inc.
发明人： MATHER, Phillip , SLAUGHTER, Jon , RIZZO, Nicholas
IPC分类号： G11B5/33 , H01L27/22 , H01L43/08
摘要： A magnetic sensor includes a plurality of groups, each group comprising a plurality of magnetic tunnel junction (MTJ) devices having a plurality of conductors configured to couple the MTJ devices within one group in parallel and the groups in series enabling independent optimization of the material resistance area (RA) of the MTJ and setting total device resistance so that the total bridge resistance is not so high that Johnson noise becomes a signal limiting concern, and yet not so low that CMOS elements may diminish the read signal. Alternatively, the magnetic tunnel junction devices within each of at least two groups in series and the at least two groups in parallel resulting in the individual configuration of the electrical connection path and the magnetic reference direction of the reference layer, leading to independent optimization of both functions, and more freedom in device design and layout. The X and Y pitch of the sense elements are arranged such that the line segment that stabilizes, for example, the right side of one sense element; also stabilizes the left side of the adjacent sense element.

10. 发明公开

EP3940802A1 MEMORY DEVICE AND FABRICATION METHOD THEREOF 审中-公开
公开(公告)号：EP3940802A1
公开(公告)日：2022-01-19
申请号：EP21185759.4
申请日：2021-07-15
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： CHEN, Jun-Yao , HUANG, Sheng-Huang , WANG, Hung-Cho , CHUANG, Harry-Hak-Lay
IPC分类号： H01L43/08 , H01L43/12 , H01L27/22
摘要： The disclosed memory device (100) includes a top electrode (124) over a magnetic tunnel junction (MTJ) stack (116) over a bottom electrode (114), and a sidewall spacer (128) laterally surrounding the MTJ stack and the top electrode. The sidewall spacer has an outermost sidewall laterally set back from an outermost sidewall of the bottom electrode, particularly formed by a separate bottom electrode patterning process after completion of the sidewall spacer fabrication.

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