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21. 发明授权

EP2068343B1 Charged particle source with automated tip formation 有权
标题翻译：具有自动尖端结构带电粒子源
公开(公告)号：EP2068343B1
公开(公告)日：2011-08-31
申请号：EP07022031.4
申请日：2007-11-13
申请人： ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH
发明人： Winkler, Dieter , Weigel, Udo , Grimm, Stefan
IPC分类号： H01J37/073 , H01J37/08 , H01J37/26 , H01J37/304 , H01J9/00 , H01J27/26
CPC分类号： H01J37/073 , H01J27/26 , H01J37/08 , H01J37/265 , H01J37/304 , H01J2237/06341 , H01J2237/0805 , H01J2237/0807 , H01J2237/30466 , H01J2237/30477 , H01J2237/31749

22. 发明公开

EP1662540A3 WAFER CHARGE COMPENSATION DEVICE AND ION IMPLANTATION SYSTEM EMPLOYING THE SAME 审中-公开
标题翻译： Ladungskompensierungsvorrichtung晶片和离子注入系统，其具有这样的
公开(公告)号：EP1662540A3
公开(公告)日：2011-04-27
申请号：EP05253687.7
申请日：2005-06-14
申请人： SEN Corporation, an SHI and Axcelis Company
发明人： Kawaguchi, Hiroshi , Sano, Makoto , Sugitani, Michiro , Murakami, Junichi , Tsukihara, Mitsukuni , Kabasawa, Mitsuaki , Kuroda, Takashi , Ueda, Kazunari , Sogabe, Hiroshi
IPC分类号： H01J37/304 , H01J37/02 , H01J37/317
CPC分类号： H01J49/26 , H01J37/026 , H01J37/304 , H01J37/3171 , H01J2237/0041
摘要： The invention provides for a charge compensation device (30) for suppressing charging of a wafer (10) when the wafer is irradiated with a beam from a beam generation source unit (11) and comprising at least one first arc chamber (34) having at least one first extraction hole (33) and a second arc chamber (35) having at least one second extraction hole (36) faced on the reciprocal swinging beam of the predetermined scan range and wherein a first arc voltage is applied to the first arc chamber to generate first plasma in the first arc chamber. The generated first plasma is extracted from the first arc chamber and introduced into the second arc chamber and second plasma is produced in the second arc chamber and second extracted plasma from the second arc chamber forms a plasma bridge between the second extraction hole and the reciprocal swinging beam.

23. 发明公开

EP2233907A1 Forming an image while milling a work piece 审中-公开
标题翻译： Erzeugung eines BildeswährenddesFräsenseinesWerkstücks
公开(公告)号：EP2233907A1
公开(公告)日：2010-09-29
申请号：EP09156391.6
申请日：2009-03-27
申请人： FEI Company
发明人： Faber, Pybe , Geurts, Remco
IPC分类号： G01N1/28 , H01J37/305 , H01J37/304
CPC分类号： H01J37/3056 , G01N1/286 , H01J37/304 , H01J2237/30466 , H01J2237/31745 , H01J2237/31749
摘要： Dual beam instruments, comprising a Scanning Electron Microscope (SEM) column for imaging and a Focused Ion Beam (FIB) column for milling, are routinely used to extract samples (lamellae) from semiconductor waters. By observing the progress of the milling with the SEM column, end pointing of the milling process can be performed.
The invention offers an alternative solution to this problem, in which an instrument with only a FIB column is used.
For milling a lamella (105) to its final thickness of, for example, 30 nm, the focused ion beam (100), is scanned repeatedly along the lamella. It is found that while milling the lamella a signal can be derived from the lamella that is sufficient for end pointing. No additional electron beam for inspection is needed.
摘要翻译：常规使用包括用于成像的扫描电子显微镜（SEM）柱和用于研磨的聚焦离子束（FIB）柱）的双光束仪器从半导体水中提取样品（薄片）。通过观察用SEM柱研磨的进度，可以进行研磨过程的结束指示。本发明提供了该问题的替代解决方案，其中仅使用具有FIB列的仪器。为了将薄片（105）研磨至例如30nm的最终厚度，聚焦离子束（100）沿薄片反复扫描。发现在铣削薄片时，信号可以从对于终点指示足够的薄片获得。不需要额外的电子束进行检查。

24. 发明公开

EP2233906A1 Forming an image while milling a work piece 审中-公开
标题翻译：在铣削工件时形成图像
公开(公告)号：EP2233906A1
公开(公告)日：2010-09-29
申请号：EP10157861.5
申请日：2010-03-26
申请人： FEI COMPANY
发明人： Faber, Pybe , Geurts, Remco
IPC分类号： G01N1/28 , H01J37/305 , H01J37/304
CPC分类号： H01J37/3056 , G01N1/286 , H01J37/304 , H01J2237/30466 , H01J2237/31745 , H01J2237/31749
摘要： Dual beam instruments, comprising a Scanning Electron Microscope (SEM) column for imaging and a Focused Ion Beam (FIB) column for milling, are routinely used to extract samples (lamellae) from semiconductor wafers. By observing the progress of the milling with the SEM column, end pointing of the milling process can be performed.
The invention offers an alternative solution to this problem, in which an instrument with only a FIB column is used.
For milling a lamella (105) to its final thickness of, for example, 30 nm, the focused ion beam (100), is scanned repeatedly along the lamella. It is found that while milling the lamella a signal can be derived from the lamella that is sufficient for end pointing. No additional electron beam for inspection is needed.
摘要翻译：包含用于成像的扫描电子显微镜（SEM）柱和用于研磨的聚焦离子束（FIB）柱的双光束仪器常规用于从半导体晶片提取样品（薄片）。通过观察SEM柱的铣削进度，可以进行铣削过程的终点。本发明为这个问题提供了另一种解决方案，其中使用仅具有FIB柱的仪器。为了将薄片（105）研磨至例如30nm的最终厚度，沿着薄片重复扫描聚焦离子束（100）。据发现，在碾磨薄片时，可以从薄片中得到足以用于结束指向的信号。不需要额外的电子束进行检查。

25. 发明公开

EP1432009A3 Electron beam exposure equipment and electron beam exposure method 审中-公开
标题翻译：电子束曝光设备和方法
公开(公告)号：EP1432009A3
公开(公告)日：2010-06-23
申请号：EP03018059.0
申请日：2003-08-07
申请人： Hitachi High-Technologies Corporation , CANON KABUSHIKI KAISHA
发明人： Sohda, Yasunari, Hitachi, Ltd. , Kamimura, Osamu, Hitachi, Ltd. , Ohta, Hiroya, Hitachi, Ltd. , Gotoh, Susumu
IPC分类号： H01J37/304 , H01J37/317 , H01J37/147
CPC分类号： H01J37/1471 , B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3045 , H01J37/3174 , H01J37/3177 , H01J2237/1501
摘要： There is provided an electron beam exposure technique which permits optical adjustment in an electron optics system using a doublet lens necessary for large field projection.
Electron beam exposure equipment having a part forming one image by at least two electromagnetic lenses, has means measuring the position of an electron beam near an image plane with changing excitation of at least two lenses at the same time; and control means feeding back the measured result to aligners or the intensity of the lenses.

26. 发明授权

EP1359602B1 Detection apparatus, detection method and electron beam irradiation apparatus 有权
标题翻译：检测装置，用于与电子辐照检测方法和装置
公开(公告)号：EP1359602B1
公开(公告)日：2010-04-07
申请号：EP03290943.4
申请日：2003-04-16
申请人： Sony Corporation
发明人： Miura, Yoshihisa, c/o Sony Corporation , Aki, Yuichi, c/o Sony Corporation
IPC分类号： H01J37/301 , H01J37/305 , G11B7/26
CPC分类号： G11B7/261 , H01J37/18 , H01J37/301 , H01J37/304 , H01J37/3056 , H01J2237/188 , H01J2237/24465

27. 发明公开

EP2124244A1 Ultra high precision measurement tool with control loop 有权
标题翻译： HochpräzisesMessinstrument mit Steuerkreis
公开(公告)号：EP2124244A1
公开(公告)日：2009-11-25
申请号：EP08156663.0
申请日：2008-05-21
申请人： ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik Mbh
发明人： Frosien, Juergen
IPC分类号： H01J37/08 , H01J37/304 , H01J37/26 , H01J27/26
CPC分类号： H01J37/265 , H01J37/28 , H01J37/304 , H01J37/3056 , H01J2237/0805 , H01J2237/0807 , H01J2237/244 , H01J2237/24507 , H01J2237/24535
摘要： A focused ion beam device (100) is described comprising a gas field ion source (10) with an emitter (20) emitting an ion beam including ions of gas, an ion beam column and a beam current control loop (300) comprising a beam current measurement device (190). Furthermore, the focused ion beam device may have a sample charge control (450) comprising measuring the sample charge. A method of operating a focused ion beam device is provided comprising applying a voltage between an emitter an electrode, applying gas to the emitter, emitting ions of a gas from the emitter and controlling a beam current by measuring the beam current with a beam current measurement device.
摘要翻译：描述了聚焦离子束装置（100），其包括具有发射包括气体离子的离子束的发射器（20）的气体离子源（10），离子束列和包括束的束流控制回路（300）电流测量装置（190）。此外，聚焦离子束装置可以具有包括测量样品电荷的样品电荷控制（450）。提供了一种操作聚焦离子束装置的方法，包括在发射极与电极之间施加电压，向发射极施加气体，从发射极发射气体的离子，并通过用束电流测量来测量束电流来控制束电流设备。

28. 发明公开

EP2027594A2 APPARATUS AND METHOD FOR CONTROLLED PARTICLE BEAM MANUFACTURING 有权
标题翻译：装置和受控生产半导体的方法，通过粒子束的装置
公开(公告)号：EP2027594A2
公开(公告)日：2009-02-25
申请号：EP06786767.1
申请日：2006-07-10
申请人： Nexgen Semi Holding, INC.
发明人： ZANI, Michael John , SCOTT, Jeffrey Winfield , BENNAHMIAS, Mark Joseph , MAYSE, Mark Anthony
IPC分类号： H01J37/302
CPC分类号： H01J37/3056 , B82Y10/00 , B82Y40/00 , H01J37/045 , H01J37/3007 , H01J37/304 , H01J37/3172 , H01J37/3174 , H01J37/3177 , H01J2237/0432 , H01J2237/047 , H01J2237/30472 , H01J2237/31713 , H01J2237/31732 , H01J2237/31735 , H01J2237/31737 , H01J2237/3174 , H01J2237/31749 , H01J2237/3175 , H01J2237/31766 , H01L21/265 , H01L21/26513 , H01L21/76267 , H01L21/84 , H01L27/0629 , H01L29/66462 , H01L29/66659 , Y10T428/24802 , Y10T428/24893
摘要： A chamber (102 in Fig. 2) for exposing a workpiece to charged particles (101 in Fig. 2) includes a source, a collimator, a beam digitizer (230 in Fig. 2) downstream of the collimator configured to create a digital beam including groups of at least one charged particle (Fig. 3B and 5) by adjusting longitudinal spacing between the particles along the axis, a deflector (210 in Fig. 6A and 6B) downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

29. 发明公开

EP1686609A3 Aberration measuring apparatus for charged particle beam optical system, charged particle beam lithography machine having the aberration measuring apparatus, and device fabrication method using the apparatus 有权转让
标题翻译：设备，用于测量像差的粒子光学设备，光刻设备，包括：用于制造的产品这样的装置和方法具有这样的装置
公开(公告)号：EP1686609A3
公开(公告)日：2009-01-14
申请号：EP06001639.1
申请日：2006-01-26
申请人： CANON KABUSHIKI KAISHA , Hitachi High-Technologies Corporation
发明人： Muraki, Masato , Ohta, Hiroya
IPC分类号： H01J37/317 , H01J37/304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3177 , H01J2237/30433
摘要： In order to measure an aberration of a charged particle beam optical system, an aberration measuring machine includes a charged particle generating unit adapted to make a plurality of charged particle beams strike the object plane of the charged particle beam optical system at different incident angles, and a detecting unit adapted to detect a position where the plurality of charged particle beams form images on the image surface of the charged particle beam optical system. The charged particle generating unit includes electron optical systems corresponding to the charged particle beams and an aperture stop to make the charged particle beams corresponding to pupil positions of the electron optical systems incident on the object plane at different incident angles.

30. 发明公开

EP1936655A3 Method of calibrating an ion implanter via the magnetic rigidity of an ion beam and its deflecting magnetic field. 审中-公开
标题翻译：一种用于经由所述离子束的磁刚度和偏转磁场校正的离子注入装置的方法。
公开(公告)号：EP1936655A3
公开(公告)日：2008-10-29
申请号：EP07024689.7
申请日：2000-06-29
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Cucchetti, Antonella , Klos, Leo Vincent , Olson, Joseph C. , Pelletier, Raymond L. , Pierce, Keith , Renau, Anthony , Smatlak, Donna
IPC分类号： H01J37/317 , H01J37/244
CPC分类号： G21K1/08 , G21K1/093 , G21K5/04 , G21K5/10 , H01J37/304 , H01J37/3171 , H01J2237/24405 , H01J2237/24528 , H01J2237/30433 , H01J2237/30472
摘要： The present invention relates to a method for determining a relation between magnetic rigidity R of an ion beam (46) and magnetic field B required to direct the ion beam (46) along a desired path in an ion implanter, comprising the steps of: positioning a beam current sensor (120) on or adjacent to the desired path, said beam current sensor (120) having a sensing aperture (152) that is smaller than a cross-sectional dimension of the ion beam (46) at the beam current sensor (120); using the beam current sensor (120) to determine a first magnetic field B 1 required to direct a first ion beam (46) having a first magnetic rigidity R 1 along the desired path; using the beam current sensor (120) to determine a second magnetic field B 2 required to direct a second ion beam (46) having a second magnetic rigidity R 2 along the desired path; and from the values of B 1 , B 2 , R 1 and R 2 , calculating values of a 0 and a 1 in the equation: B=a 1 R+a 0 thereby providing a relation between magnetic rigidity R of an ion beam (46) and magnetic field B for the ion implanter.

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