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1. 发明公开

EP2416165A1 Method of forming a 3D reconstruction of a sample using a scanning probe microscope 审中-公开
标题翻译： Verfahren zur Bildung einer 3D-Rekonstruktion einer Probe mittels Rastersondenmikroskop
公开(公告)号：EP2416165A1
公开(公告)日：2012-02-08
申请号：EP10171871.6
申请日：2010-08-04
申请人： FEI Company
发明人： Stokes, Deborah , Geurts, Remco , Hubert, Dominicus , Barber, Asa
IPC分类号： G01Q30/02 , G01Q30/10 , G01Q30/16 , G01Q30/20 , G01N1/42 , H01J37/305
CPC分类号： G01Q30/02 , G01N1/32 , G01N1/42 , G01Q30/10 , G01Q30/16 , G01Q30/20 , H01J37/3056 , H01J2237/31745
摘要： The invention relates to a method of inspecting a sample (101), the method comprising:
repeatedly
• Preparing a fresh surface (304,306) on the block face of a sample by removing the surface layer,
• Inspecting the block face with a scanning probe microscope (100), resulting in information of the current surface layer,

Followed by
• Combining the information of a multitude of inspections into a 3D reconstruction of the sample,

Characterized in that
The removal is performed in an evacuated environment by ion beam milling.

By performing the removal of the surface with ion beam milling, mechanical deformations are avoided, surface roughness is reduced, and the vertical resolution is enhanced, resulting in a better 3D reconstruction of the sample.
摘要翻译：本发明涉及一种检查样品（101）的方法，所述方法包括：重复地通过去除表面层在样品的块面上准备新鲜的表面（304,306），¢检查块面用扫描探针显微镜（100），产生当前表面层的信息，其次为¢将大量检查的信息合并到样品的三维重建中，其特征在于通过离子束铣削在抽真空的环境中进行去除。通过用离子束铣削进行表面去除，避免了机械变形，减小了表面粗糙度，并提高了垂直分辨率，从而导致样品更好的3D重建。

2. 发明公开

EP4064322A1 IN-SITU LASER REDEPOSITION REDUCTION BY A CONTROLLED GAS FLOW AND A SYSTEM FOR REDUCING CONTAMINATION 审中-实审
公开(公告)号：EP4064322A1
公开(公告)日：2022-09-28
申请号：EP22163312.6
申请日：2022-03-21
申请人： FEI Company
发明人： Gancarcik, Tomás , Dekan, Ivan , Krobot, David , Trnkócy, Tomás , Randolph, Steven , Geurts, Remco
IPC分类号： H01J37/22 , B23K26/12
摘要： Deposition of debris produced in laser ablation of a workpiece situated in a vacuum chamber is reduced by introduction a background gas into the vacuum chamber prior to or during laser ablation. The background gas can be introduced diffusely into the vacuum chamber and can reduce contamination of surfaces such as a surface of an optical window that faces the workpiece during processing. Directed introduction of a background gas can be used as well and in some cases the same or a different background gas is directed to a workpiece surface at the same or different pressure than that associated with diffuse introduction of the background gas to reduce contamination of the workpiece surface with laser ablation debris.

3. 发明授权

EP2787523B1 Low energy ion milling or deposition 有权
标题翻译：低能量离子铣削或沉积
公开(公告)号：EP2787523B1
公开(公告)日：2016-02-10
申请号：EP13162084.1
申请日：2013-04-03
申请人： FEI COMPANY
发明人： Mulders, Johannes , Geurts, Remco , Trompenaars, Piet , Bosch, Eric
IPC分类号： H01J37/02 , H01J37/305 , H01J37/317
CPC分类号： C23C14/48 , G01N1/286 , G01N1/32 , H01J37/02 , H01J37/3053 , H01J37/3171 , H01J37/3178 , H01J2237/004 , H01J2237/006 , H01J2237/31732 , H01J2237/3174 , H01J2237/31742 , H01J2237/31745 , H01J2237/31749

4. 发明公开

EP2787523A1 Low energy ion milling or deposition 有权
标题翻译：低能量离子铣削或沉积
公开(公告)号：EP2787523A1
公开(公告)日：2014-10-08
申请号：EP13162084.1
申请日：2013-04-03
申请人： FEI COMPANY
发明人： Mulders, Johannes , Geurts, Remco , Trompenaars, Piet , Bosch, Eric
IPC分类号： H01J37/02 , H01J37/305 , H01J37/317
CPC分类号： C23C14/48 , G01N1/286 , G01N1/32 , H01J37/02 , H01J37/3053 , H01J37/3171 , H01J37/3178 , H01J2237/004 , H01J2237/006 , H01J2237/31732 , H01J2237/3174 , H01J2237/31742 , H01J2237/31745 , H01J2237/31749
摘要： Samples such as semiconductor samples to be imaged in a Transmission Electron Microscope must, after excavating said sample from a wafer, be thinned to form a lamella with a thickness of, for example, 20 nm. This is commonly done by sputtering with ions in a charged particle apparatus equipped with a Scanning Electron Microscope (SEM) column and Focused Ion Beam (FIB) column, further equipped with one or more Gas Injection Systems (GISses). Likewise metallic samples (comprising for example steel and silicon) are inspected in the material science.
A problem when milling a lamella to such a thickness is that a large part of the lamella becomes amorphous due to the bombardment with ions, and that ions get implanted in the sample.
The invention provides a solution to said problem by applying a voltage difference between the capillary of the GIS (201) and the sample (200), and directing a beam of ions or electrons (206) to the jet of gas (207). The beam thereby ionizes gas that is accelerated to the sample, where (when using a low voltage between sample and GIS) low energy milling occurs, and thus little sample thickness becomes amorphous.
摘要翻译：在透射电子显微镜中成像的半导体样品等样品必须在从晶片上挖掘所述样品之后变薄以形成例如厚度为20nm的薄片。这通常通过在装备有扫描电子显微镜（SEM）柱和聚焦离子束（FIB）柱的带电粒子设备中使用离子进行溅射来进行，所述柱进一步配备有一个或多个气体注入系统（GISses）。同样在材料科学中检测金属样品（包括例如钢和硅）。将薄层研磨至这样厚度时的问题在于，由于用离子轰击，大部分薄层变为无定形，并且离子被植入样品中。本发明通过在GIS（201）的毛细管和样本（200）之间施加电压差并且将离子束或电子（206）引导到气体射流（207）来提供对所述问题的解决方案。由此，电子束使被加速到样品的气体电离，其中（当在样品和GIS之间使用低电压时）发生低能量研磨，因此很少样品厚度变为非晶态。

5. 发明公开

EP2233907A1 Forming an image while milling a work piece 审中-公开
标题翻译： Erzeugung eines BildeswährenddesFräsenseinesWerkstücks
公开(公告)号：EP2233907A1
公开(公告)日：2010-09-29
申请号：EP09156391.6
申请日：2009-03-27
申请人： FEI Company
发明人： Faber, Pybe , Geurts, Remco
IPC分类号： G01N1/28 , H01J37/305 , H01J37/304
CPC分类号： H01J37/3056 , G01N1/286 , H01J37/304 , H01J2237/30466 , H01J2237/31745 , H01J2237/31749
摘要： Dual beam instruments, comprising a Scanning Electron Microscope (SEM) column for imaging and a Focused Ion Beam (FIB) column for milling, are routinely used to extract samples (lamellae) from semiconductor waters. By observing the progress of the milling with the SEM column, end pointing of the milling process can be performed.
The invention offers an alternative solution to this problem, in which an instrument with only a FIB column is used.
For milling a lamella (105) to its final thickness of, for example, 30 nm, the focused ion beam (100), is scanned repeatedly along the lamella. It is found that while milling the lamella a signal can be derived from the lamella that is sufficient for end pointing. No additional electron beam for inspection is needed.
摘要翻译：常规使用包括用于成像的扫描电子显微镜（SEM）柱和用于研磨的聚焦离子束（FIB）柱）的双光束仪器从半导体水中提取样品（薄片）。通过观察用SEM柱研磨的进度，可以进行研磨过程的结束指示。本发明提供了该问题的替代解决方案，其中仅使用具有FIB列的仪器。为了将薄片（105）研磨至例如30nm的最终厚度，聚焦离子束（100）沿薄片反复扫描。发现在铣削薄片时，信号可以从对于终点指示足够的薄片获得。不需要额外的电子束进行检查。

6. 发明公开

EP2233906A1 Forming an image while milling a work piece 审中-公开
标题翻译：在铣削工件时形成图像
公开(公告)号：EP2233906A1
公开(公告)日：2010-09-29
申请号：EP10157861.5
申请日：2010-03-26
申请人： FEI COMPANY
发明人： Faber, Pybe , Geurts, Remco
IPC分类号： G01N1/28 , H01J37/305 , H01J37/304
CPC分类号： H01J37/3056 , G01N1/286 , H01J37/304 , H01J2237/30466 , H01J2237/31745 , H01J2237/31749
摘要： Dual beam instruments, comprising a Scanning Electron Microscope (SEM) column for imaging and a Focused Ion Beam (FIB) column for milling, are routinely used to extract samples (lamellae) from semiconductor wafers. By observing the progress of the milling with the SEM column, end pointing of the milling process can be performed.
The invention offers an alternative solution to this problem, in which an instrument with only a FIB column is used.
For milling a lamella (105) to its final thickness of, for example, 30 nm, the focused ion beam (100), is scanned repeatedly along the lamella. It is found that while milling the lamella a signal can be derived from the lamella that is sufficient for end pointing. No additional electron beam for inspection is needed.
摘要翻译：包含用于成像的扫描电子显微镜（SEM）柱和用于研磨的聚焦离子束（FIB）柱的双光束仪器常规用于从半导体晶片提取样品（薄片）。通过观察SEM柱的铣削进度，可以进行铣削过程的终点。本发明为这个问题提供了另一种解决方案，其中使用仅具有FIB柱的仪器。为了将薄片（105）研磨至例如30nm的最终厚度，沿着薄片重复扫描聚焦离子束（100）。据发现，在碾磨薄片时，可以从薄片中得到足以用于结束指向的信号。不需要额外的电子束进行检查。

7. 发明公开

EP2149897A1 Method for milling and end-pointing a sample 审中-公开
标题翻译： Verfahren zumFräsenund zur Endpunktbestimm einer Probe
公开(公告)号：EP2149897A1
公开(公告)日：2010-02-03
申请号：EP08161546.0
申请日：2008-07-31
申请人： FEI COMPANY
发明人： Faber, Pybe , Geurts, Remco
IPC分类号： H01J37/305 , H01J37/304
CPC分类号： H01J37/3053 , H01J37/3045 , H01J2237/221 , H01J2237/30466 , H01J2237/3118 , H01J2237/3151
摘要： The invention relates to a method for end-pointing milling of a sample with a Focused Ion Beam apparatus (FIB). Known end-pointing results in interruption of the milling only after the feature of interest is exposed. This implies that for high-speed milling the feature may already be damaged when the milling is stopped. The invention discloses that images are made while milling, and that these images are matched with a 3D model of the sample, so that milling conditions can be changed before the feature is exposed. Milling can then progress at a lower speed, offering better control, or another removal technique, such as gas assisted milling with other gasses, can be used so as to minimize damage to the feature. Hereby the method according to the invention combines high removal rate and delicate control of removed thickness.
It is noted that the invention is also applicable when other removal methods are used, such as e.g. laser ablation.
摘要翻译：本发明涉及用聚焦离子束装置（FIB）对样品进行端点铣削的方法。已知的最终指向导致仅在感兴趣的特征暴露之后中断铣削。这意味着对于高速铣削，铣削停止时，特征可能已被损坏。本发明公开了在研磨时制作图像，并且这些图像与样品的3D模型相匹配，使得在特征曝光之前可以改变研磨条件。铣削可以以更低的速度进行，提供更好的控制，或者可以使用另一种去除技术，例如使用其他气体的气体辅助研磨，以便最小化对特征的损害。因此，根据本发明的方法结合了高去除率和去除厚度的精细控制。应当注意，当使用其它去除方法时，本发明也适用，例如，激光烧蚀。

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