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1. 发明授权

EP3247553B1 METHOD FOR CHARACTERIZING AN ELECTRON BEAM 有权转让
公开(公告)号：EP3247553B1
公开(公告)日：2018-11-28
申请号：EP16700736.8
申请日：2016-01-15
申请人： ARCAM AB
发明人： LOCK, Tomas
IPC分类号： B29C67/00 , B23K15/00 , H01J37/30 , H01J37/304 , G01T1/29
CPC分类号： H01J37/3045 , B22F3/1055 , B22F2003/1056 , B22F2003/1057 , B23K15/0013 , B23K15/002 , B23K15/0026 , B23K15/0086 , B23K15/02 , B28B1/001 , B28B17/00 , B28B17/0081 , B29C64/153 , B29C64/20 , B29C64/386 , B33Y10/00 , B33Y30/00 , B33Y40/00 , B33Y50/02 , G01T1/295 , H01J37/09 , H01J37/244 , H01J37/30 , H01J37/3005 , H01J37/304 , H01J37/305 , H01J37/317 , H01J2237/0453 , H01J2237/2445 , H01J2237/2448 , H01J2237/24514 , H01J2237/2826 , H01J2237/30433 , H01J2237/3045 , H01J2237/30472 , H01J2237/3128 , Y02P10/295
摘要： A device for detecting X-rays radiated out of a substrate surface, said device comprising at least one X-ray detector, a resolver grating and a modulator grating, said resolver grating with at least one opening facing towards said X-ray detector is arranged in front of said X-ray detector. Said modulator grating is provided between said resolver grating and said substrate at a predetermined distance from said resolver grating and said substrate, where said modulator grating having a plurality of openings in at least a first direction, wherein said x-rays from said surface is spatially modulated with said modulator grating and resolver grating.

2. 发明公开

EP1686609A3 Aberration measuring apparatus for charged particle beam optical system, charged particle beam lithography machine having the aberration measuring apparatus, and device fabrication method using the apparatus 有权转让
标题翻译：设备，用于测量像差的粒子光学设备，光刻设备，包括：用于制造的产品这样的装置和方法具有这样的装置
公开(公告)号：EP1686609A3
公开(公告)日：2009-01-14
申请号：EP06001639.1
申请日：2006-01-26
申请人： CANON KABUSHIKI KAISHA , Hitachi High-Technologies Corporation
发明人： Muraki, Masato , Ohta, Hiroya
IPC分类号： H01J37/317 , H01J37/304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3177 , H01J2237/30433
摘要： In order to measure an aberration of a charged particle beam optical system, an aberration measuring machine includes a charged particle generating unit adapted to make a plurality of charged particle beams strike the object plane of the charged particle beam optical system at different incident angles, and a detecting unit adapted to detect a position where the plurality of charged particle beams form images on the image surface of the charged particle beam optical system. The charged particle generating unit includes electron optical systems corresponding to the charged particle beams and an aperture stop to make the charged particle beams corresponding to pupil positions of the electron optical systems incident on the object plane at different incident angles.

3. 发明公开

EP1936655A3 Method of calibrating an ion implanter via the magnetic rigidity of an ion beam and its deflecting magnetic field. 审中-公开
标题翻译：一种用于经由所述离子束的磁刚度和偏转磁场校正的离子注入装置的方法。
公开(公告)号：EP1936655A3
公开(公告)日：2008-10-29
申请号：EP07024689.7
申请日：2000-06-29
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Cucchetti, Antonella , Klos, Leo Vincent , Olson, Joseph C. , Pelletier, Raymond L. , Pierce, Keith , Renau, Anthony , Smatlak, Donna
IPC分类号： H01J37/317 , H01J37/244
CPC分类号： G21K1/08 , G21K1/093 , G21K5/04 , G21K5/10 , H01J37/304 , H01J37/3171 , H01J2237/24405 , H01J2237/24528 , H01J2237/30433 , H01J2237/30472
摘要： The present invention relates to a method for determining a relation between magnetic rigidity R of an ion beam (46) and magnetic field B required to direct the ion beam (46) along a desired path in an ion implanter, comprising the steps of: positioning a beam current sensor (120) on or adjacent to the desired path, said beam current sensor (120) having a sensing aperture (152) that is smaller than a cross-sectional dimension of the ion beam (46) at the beam current sensor (120); using the beam current sensor (120) to determine a first magnetic field B 1 required to direct a first ion beam (46) having a first magnetic rigidity R 1 along the desired path; using the beam current sensor (120) to determine a second magnetic field B 2 required to direct a second ion beam (46) having a second magnetic rigidity R 2 along the desired path; and from the values of B 1 , B 2 , R 1 and R 2 , calculating values of a 0 and a 1 in the equation: B=a 1 R+a 0 thereby providing a relation between magnetic rigidity R of an ion beam (46) and magnetic field B for the ion implanter.

4. 发明公开

EP1891658A2 PARTICULATE PREVENTION IN ION IMPLANTATION 审中-公开
标题翻译： Partikular预防AT离子注入
公开(公告)号：EP1891658A2
公开(公告)日：2008-02-27
申请号：EP06760675.6
申请日：2006-06-02
申请人： AXCELIS TECHNOLOGIES, INC.
发明人： VANDERPOT, John , BERRIAN, Donald
IPC分类号： H01J37/317 , H01J37/08 , H01J37/304
CPC分类号： H01J37/244 , H01J37/045 , H01J37/09 , H01J37/302 , H01J37/3171 , H01J2237/022 , H01J2237/026 , H01J2237/028 , H01J2237/30433 , H01J2237/31705
摘要： A system and method for mitigating contamination in an ion implantation system is provided. The system comprises an ion source (200), a power supply (216) operable to supply power to a filament (214) and mirror electrode (218) of the ion source, a workpiece handling system, and a controller (228), wherein the ion source is selectively tunable via the controller to provide rapid control of a formation of an ion beam. The controller is operable to selectively rapidly control power to the ion source, therein modulating a power of the ion beam between an implantation power and a minimal power in less than approximately 20 microseconds based, at least in part, to a signal associated with a workpiece position. Control of the ion source therefore mitigates particle contamination in the ion implantation system by minimizing an amount of time at which the ion beam is at the implantation current.

5. 发明授权

EP1300870B1 Multiple electron beam device 有权
标题翻译：多电子束装置
公开(公告)号：EP1300870B1
公开(公告)日：2007-04-04
申请号：EP01123855.7
申请日：2001-10-05
申请人： ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH
发明人： Winkler, Dieter , Adamec, Pavel , Göhl, Achim , Banzhof, Helmut
IPC分类号： H01J37/304
CPC分类号： H01J37/28 , B82Y10/00 , B82Y40/00 , H01J37/21 , H01J37/304 , H01J37/3174 , H01J2237/216 , H01J2237/2446 , H01J2237/2826 , H01J2237/30433 , H01J2237/3045

6. 发明公开

EP1686610A2 Aberration adjusting method, device fabrication method, and charged particle beam lithography machine 有权转让
标题翻译：一种用于为Teilchenstrahllithographie，对于Teilchenstrahllithographie装置，一种装置的像差过程和工艺设定用于制备的产品与本装置
公开(公告)号：EP1686610A2
公开(公告)日：2006-08-02
申请号：EP06001640.9
申请日：2006-01-26
申请人： CANON KABUSHIKI KAISHA , Hitachi High-Technologies Corporation
发明人： Muraki, Masato , Ohta, Hiroya
IPC分类号： H01J37/317 , H01J37/304
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/304 , H01J2237/30433
摘要： The aberrations of a charged particle beam optical system in a lithography machine are measured. Control amounts to control optical elements included in the charged particle beam optical system are changed, the variations of the aberrations are obtained by executing the aberration measuring step, and the aberration sensitivities of the control amounts are obtained. The control amounts are decided on the basis of the aberrations of the charged particle beam optical system and the aberration sensitivities of the control amounts to set the aberrations of the charged particle beam optical system to target aberrations.
摘要翻译：在光刻机的带电粒子束的光学系统的像差被测量。控制量来控制包括在所述带电粒子束的光学系统被改变的光学元件，像差的变化通过执行像差测量步骤中获得，并且控制量的像差灵敏度得到。的控制量的带电粒子束的光学系统的像差和控制量的像差灵敏度的基础上，决定将所述带电粒子束的光学系统的像差到目标像差。

7. 发明公开

EP1002330A1 METHOD FOR MONITORING THE PERFORMANCE OF AN ION IMPLANTER USING REUSABLE WAFERS 失效
标题翻译： FOR A离子注入机的性能监测方法一起使用REUSABLE DISCS
公开(公告)号：EP1002330A1
公开(公告)日：2000-05-24
申请号：EP98918033.6
申请日：1998-04-07
申请人： ADVANCED MICRO DEVICES INC.
发明人： ROHNER, Don, R.
IPC分类号： H01J37/317 , G01R31/265 , H01L21/66
CPC分类号： H01L22/20 , H01J37/304 , H01J2237/30433 , H01J2237/31701 , H01L22/34
摘要： Low-mass implants, for example hydrogen and helium ions, are used in place of more typical dopants like boron, phosphorus, and arsenic for testing the performance of ion implanters. Consistency between ion implantation test runs with the low-mass ions may be used to provide information about the proper operation of ion implanters. Lower-mass ions do not transfer as much of their energy to the wafer as heavier ions. Consequently, high energy ion implantations with low-mass ions do not repair wafer surface damage to the same degree as ion implantations with high-mass ions. When sufficient surface damage exists, a thermowave tool can detect the damage and provide information about the performance of the ion implanter. This determination can be made in a one-step method. An additional advantage to implanting the test wafers with low-mass ions is being able to reuse the wafers for subsequent test runs. When low-mass implants are used (such as hydrogen and helium), a thermal anneal subsequent to the ion implantation can repair any damage to the crystal and at the same time dissociate the low-mass dopants from the silicon crystal. The crystal is returned in its original condition after the escape of the low-mass dopants. If reusability is the highest priority, silicon ions may be used as the test species. Implanted silicon ions can cause measurable damage to the surface of the wafer. A calibration state of the ion implanter may then be determined by examining the surface damage. A subsequent thermal anneal can repair the damage to the surface and return the crystal to its original state.

8. 发明授权

EP0121412B1 Method of forming by projection an integrated circuit pattern on a semiconductor wafer 失效
标题翻译：通过投影在半导体波长上形成集成电路图的方法
公开(公告)号：EP0121412B1
公开(公告)日：1991-11-27
申请号：EP84302124.7
申请日：1984-03-28
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Gotou, Mineo , Sano, Shunichi
IPC分类号： G03B41/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/70433 , G03F7/7045 , G03F7/706 , H01J37/3045 , H01J37/3174 , H01J2237/30433

9. 发明公开

EP3268977A1 INDIVIDUAL BEAM PATTERN PLACEMENT VERIFICATION IN MULTIPLE BEAM LITHOGRAPHY 审中-实审转让
标题翻译：多光束平版印刷中单个光束图案放置的验证
公开(公告)号：EP3268977A1
公开(公告)日：2018-01-17
申请号：EP16709081.0
申请日：2016-03-10
申请人： Mapper Lithography IP B.V.
发明人： VERGEER, Niels
IPC分类号： H01J37/304 , G03F7/20 , H01J37/317
CPC分类号： H01J37/3177 , G01N21/88 , G03F9/7088 , H01J37/3045 , H01J2237/2482 , H01J2237/30433 , H01J2237/31798
摘要： Methods and systems for verification of a mark written on a target surface during a multiple beam lithography process, and for verifying beam position of individual beams on the target surface based on mark verification are disclosed. A mark can be verified by scanning an optical beam over the mark and measuring the reflected optical beam and the position of the target with respect to the optical beam. By comparing the intensity of the reflected light as a function of distance over the mark with reference mark data representing an intended definition of the mark, and any deviation between the measured representation and the reference mark data are determined. If any deviation deviate more than the predetermined limit, incorrectly positioned beams can be verified from the data.

10. 发明公开

EP2988315A3 METHOD FOR ANALYZING AND/OR PROCESSING AN OBJECT AS WELL AS A PARTICLE BEAM DEVICE FOR CARRYING OUT THE METHOD 审中-公开
标题翻译：程序用于分析和/或处理一个对象，并粒子束用于执行该方法
公开(公告)号：EP2988315A3
公开(公告)日：2016-06-15
申请号：EP15177429.6
申请日：2015-07-20
申请人： Carl Zeiss Microscopy GmbH
发明人： Biberger, Josef , Lechner, Lorenz , Postolski, Michal , Pulwey, Ralph , Janaszewsk, Marcin
IPC分类号： H01J37/304 , H01J37/26
CPC分类号： H01J37/20 , H01J37/147 , H01J37/265 , H01J37/304 , H01J2237/30433
摘要： The application relates to a method for analyzing, in particular for imaging, and/or processing of an object as well as a particle beam device for carrying out this method. In particular, the particle beam device of this application is an electron beam device and/or an ion beam device. The method in particular comprises the control unit providing a first control parameter, wherein a beam guiding unit is controlled using the first control parameter for guiding the particle beam and/or wherein a moving unit is controlled using the first control parameter for moving an object holder, correlating a position of the object holder in a second coordinate system to the object position on the surface of the object, identifying a first coordinate transformation between the first coordinate system and the second coordinate system, identifying an orientation position of a distinctive feature on the surface of the object and identifying first coordinates of the orientation position in the first coordinate system, the control unit providing a second control parameter, wherein the second control parameter is used for at least one of: controlling the beam guiding unit for guiding the particle beam, controlling the moving unit for moving the object holder or controlling a detector, identifying again the orientation position of the distinctive feature and identifying second coordinates of the orientation position in the first coordinate system, comparing the first coordinates with the second coordinates, identifying a local displacement of the first coordinates to the second coordinates, identifying a second coordinate transformation using the first coordinate transformation and the local displacement and identifying a position of an area to be analyzed and/or processed on the surface of the object.

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