专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

EP3247553B1 METHOD FOR CHARACTERIZING AN ELECTRON BEAM 有权转让
公开(公告)号：EP3247553B1
公开(公告)日：2018-11-28
申请号：EP16700736.8
申请日：2016-01-15
申请人： ARCAM AB
发明人： LOCK, Tomas
IPC分类号： B29C67/00 , B23K15/00 , H01J37/30 , H01J37/304 , G01T1/29
CPC分类号： H01J37/3045 , B22F3/1055 , B22F2003/1056 , B22F2003/1057 , B23K15/0013 , B23K15/002 , B23K15/0026 , B23K15/0086 , B23K15/02 , B28B1/001 , B28B17/00 , B28B17/0081 , B29C64/153 , B29C64/20 , B29C64/386 , B33Y10/00 , B33Y30/00 , B33Y40/00 , B33Y50/02 , G01T1/295 , H01J37/09 , H01J37/244 , H01J37/30 , H01J37/3005 , H01J37/304 , H01J37/305 , H01J37/317 , H01J2237/0453 , H01J2237/2445 , H01J2237/2448 , H01J2237/24514 , H01J2237/2826 , H01J2237/30433 , H01J2237/3045 , H01J2237/30472 , H01J2237/3128 , Y02P10/295
摘要： A device for detecting X-rays radiated out of a substrate surface, said device comprising at least one X-ray detector, a resolver grating and a modulator grating, said resolver grating with at least one opening facing towards said X-ray detector is arranged in front of said X-ray detector. Said modulator grating is provided between said resolver grating and said substrate at a predetermined distance from said resolver grating and said substrate, where said modulator grating having a plurality of openings in at least a first direction, wherein said x-rays from said surface is spatially modulated with said modulator grating and resolver grating.

2. 发明公开

EP1686609A3 Aberration measuring apparatus for charged particle beam optical system, charged particle beam lithography machine having the aberration measuring apparatus, and device fabrication method using the apparatus 有权转让
标题翻译：设备，用于测量像差的粒子光学设备，光刻设备，包括：用于制造的产品这样的装置和方法具有这样的装置
公开(公告)号：EP1686609A3
公开(公告)日：2009-01-14
申请号：EP06001639.1
申请日：2006-01-26
申请人： CANON KABUSHIKI KAISHA , Hitachi High-Technologies Corporation
发明人： Muraki, Masato , Ohta, Hiroya
IPC分类号： H01J37/317 , H01J37/304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3177 , H01J2237/30433
摘要： In order to measure an aberration of a charged particle beam optical system, an aberration measuring machine includes a charged particle generating unit adapted to make a plurality of charged particle beams strike the object plane of the charged particle beam optical system at different incident angles, and a detecting unit adapted to detect a position where the plurality of charged particle beams form images on the image surface of the charged particle beam optical system. The charged particle generating unit includes electron optical systems corresponding to the charged particle beams and an aperture stop to make the charged particle beams corresponding to pupil positions of the electron optical systems incident on the object plane at different incident angles.

3. 发明公开

EP1936655A3 Method of calibrating an ion implanter via the magnetic rigidity of an ion beam and its deflecting magnetic field. 审中-公开
标题翻译：一种用于经由所述离子束的磁刚度和偏转磁场校正的离子注入装置的方法。
公开(公告)号：EP1936655A3
公开(公告)日：2008-10-29
申请号：EP07024689.7
申请日：2000-06-29
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Cucchetti, Antonella , Klos, Leo Vincent , Olson, Joseph C. , Pelletier, Raymond L. , Pierce, Keith , Renau, Anthony , Smatlak, Donna
IPC分类号： H01J37/317 , H01J37/244
CPC分类号： G21K1/08 , G21K1/093 , G21K5/04 , G21K5/10 , H01J37/304 , H01J37/3171 , H01J2237/24405 , H01J2237/24528 , H01J2237/30433 , H01J2237/30472
摘要： The present invention relates to a method for determining a relation between magnetic rigidity R of an ion beam (46) and magnetic field B required to direct the ion beam (46) along a desired path in an ion implanter, comprising the steps of: positioning a beam current sensor (120) on or adjacent to the desired path, said beam current sensor (120) having a sensing aperture (152) that is smaller than a cross-sectional dimension of the ion beam (46) at the beam current sensor (120); using the beam current sensor (120) to determine a first magnetic field B 1 required to direct a first ion beam (46) having a first magnetic rigidity R 1 along the desired path; using the beam current sensor (120) to determine a second magnetic field B 2 required to direct a second ion beam (46) having a second magnetic rigidity R 2 along the desired path; and from the values of B 1 , B 2 , R 1 and R 2 , calculating values of a 0 and a 1 in the equation: B=a 1 R+a 0 thereby providing a relation between magnetic rigidity R of an ion beam (46) and magnetic field B for the ion implanter.

4. 发明公开

EP1891658A2 PARTICULATE PREVENTION IN ION IMPLANTATION 审中-公开
标题翻译： Partikular预防AT离子注入
公开(公告)号：EP1891658A2
公开(公告)日：2008-02-27
申请号：EP06760675.6
申请日：2006-06-02
申请人： AXCELIS TECHNOLOGIES, INC.
发明人： VANDERPOT, John , BERRIAN, Donald
IPC分类号： H01J37/317 , H01J37/08 , H01J37/304
CPC分类号： H01J37/244 , H01J37/045 , H01J37/09 , H01J37/302 , H01J37/3171 , H01J2237/022 , H01J2237/026 , H01J2237/028 , H01J2237/30433 , H01J2237/31705
摘要： A system and method for mitigating contamination in an ion implantation system is provided. The system comprises an ion source (200), a power supply (216) operable to supply power to a filament (214) and mirror electrode (218) of the ion source, a workpiece handling system, and a controller (228), wherein the ion source is selectively tunable via the controller to provide rapid control of a formation of an ion beam. The controller is operable to selectively rapidly control power to the ion source, therein modulating a power of the ion beam between an implantation power and a minimal power in less than approximately 20 microseconds based, at least in part, to a signal associated with a workpiece position. Control of the ion source therefore mitigates particle contamination in the ion implantation system by minimizing an amount of time at which the ion beam is at the implantation current.

5. 发明授权

EP1300870B1 Multiple electron beam device 有权
标题翻译：多电子束装置
公开(公告)号：EP1300870B1
公开(公告)日：2007-04-04
申请号：EP01123855.7
申请日：2001-10-05
申请人： ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH
发明人： Winkler, Dieter , Adamec, Pavel , Göhl, Achim , Banzhof, Helmut
IPC分类号： H01J37/304
CPC分类号： H01J37/28 , B82Y10/00 , B82Y40/00 , H01J37/21 , H01J37/304 , H01J37/3174 , H01J2237/216 , H01J2237/2446 , H01J2237/2826 , H01J2237/30433 , H01J2237/3045

6. 发明公开

EP1686610A2 Aberration adjusting method, device fabrication method, and charged particle beam lithography machine 有权转让
标题翻译：一种用于为Teilchenstrahllithographie，对于Teilchenstrahllithographie装置，一种装置的像差过程和工艺设定用于制备的产品与本装置
公开(公告)号：EP1686610A2
公开(公告)日：2006-08-02
申请号：EP06001640.9
申请日：2006-01-26
申请人： CANON KABUSHIKI KAISHA , Hitachi High-Technologies Corporation
发明人： Muraki, Masato , Ohta, Hiroya
IPC分类号： H01J37/317 , H01J37/304
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/304 , H01J2237/30433
摘要： The aberrations of a charged particle beam optical system in a lithography machine are measured. Control amounts to control optical elements included in the charged particle beam optical system are changed, the variations of the aberrations are obtained by executing the aberration measuring step, and the aberration sensitivities of the control amounts are obtained. The control amounts are decided on the basis of the aberrations of the charged particle beam optical system and the aberration sensitivities of the control amounts to set the aberrations of the charged particle beam optical system to target aberrations.
摘要翻译：在光刻机的带电粒子束的光学系统的像差被测量。控制量来控制包括在所述带电粒子束的光学系统被改变的光学元件，像差的变化通过执行像差测量步骤中获得，并且控制量的像差灵敏度得到。的控制量的带电粒子束的光学系统的像差和控制量的像差灵敏度的基础上，决定将所述带电粒子束的光学系统的像差到目标像差。

7. 发明公开

EP1002330A1 METHOD FOR MONITORING THE PERFORMANCE OF AN ION IMPLANTER USING REUSABLE WAFERS 失效
标题翻译： FOR A离子注入机的性能监测方法一起使用REUSABLE DISCS
公开(公告)号：EP1002330A1
公开(公告)日：2000-05-24
申请号：EP98918033.6
申请日：1998-04-07
申请人： ADVANCED MICRO DEVICES INC.
发明人： ROHNER, Don, R.
IPC分类号： H01J37/317 , G01R31/265 , H01L21/66
CPC分类号： H01L22/20 , H01J37/304 , H01J2237/30433 , H01J2237/31701 , H01L22/34
摘要： Low-mass implants, for example hydrogen and helium ions, are used in place of more typical dopants like boron, phosphorus, and arsenic for testing the performance of ion implanters. Consistency between ion implantation test runs with the low-mass ions may be used to provide information about the proper operation of ion implanters. Lower-mass ions do not transfer as much of their energy to the wafer as heavier ions. Consequently, high energy ion implantations with low-mass ions do not repair wafer surface damage to the same degree as ion implantations with high-mass ions. When sufficient surface damage exists, a thermowave tool can detect the damage and provide information about the performance of the ion implanter. This determination can be made in a one-step method. An additional advantage to implanting the test wafers with low-mass ions is being able to reuse the wafers for subsequent test runs. When low-mass implants are used (such as hydrogen and helium), a thermal anneal subsequent to the ion implantation can repair any damage to the crystal and at the same time dissociate the low-mass dopants from the silicon crystal. The crystal is returned in its original condition after the escape of the low-mass dopants. If reusability is the highest priority, silicon ions may be used as the test species. Implanted silicon ions can cause measurable damage to the surface of the wafer. A calibration state of the ion implanter may then be determined by examining the surface damage. A subsequent thermal anneal can repair the damage to the surface and return the crystal to its original state.

8. 发明授权

EP0121412B1 Method of forming by projection an integrated circuit pattern on a semiconductor wafer 失效
标题翻译：通过投影在半导体波长上形成集成电路图的方法
公开(公告)号：EP0121412B1
公开(公告)日：1991-11-27
申请号：EP84302124.7
申请日：1984-03-28
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Gotou, Mineo , Sano, Shunichi
IPC分类号： G03B41/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/70433 , G03F7/7045 , G03F7/706 , H01J37/3045 , H01J37/3174 , H01J2237/30433

9. 发明公开

EP3248209A1 METHOD AND DEVICE FOR CHARACTERIZING AN ELECTRON BEAM 有权
公开(公告)号：EP3248209A1
公开(公告)日：2017-11-29
申请号：EP16700752.5
申请日：2016-01-15
申请人： ARCAM AB
发明人： LOCK, Tomas
IPC分类号： H01J37/30 , B23K15/00 , H01J37/304 , B29C67/00 , B22F3/105
CPC分类号： H01J37/3045 , B22F3/1055 , B22F2003/1056 , B22F2003/1057 , B23K15/0013 , B23K15/002 , B23K15/0026 , B23K15/0086 , B23K15/02 , B28B1/001 , B28B17/00 , B28B17/0081 , B29C64/153 , B29C64/20 , B29C64/386 , B33Y10/00 , B33Y30/00 , B33Y40/00 , B33Y50/02 , G01T1/295 , H01J37/09 , H01J37/244 , H01J37/30 , H01J37/3005 , H01J37/304 , H01J37/305 , H01J37/317 , H01J2237/0453 , H01J2237/2445 , H01J2237/2448 , H01J2237/24514 , H01J2237/2826 , H01J2237/30433 , H01J2237/3045 , H01J2237/30472 , H01J2237/3128 , Y02P10/295
摘要： A device for detecting X-rays radiated out of a substrate surface, said device comprising at least one X-ray detector, a resolver grating and a modulator grating, said resolver grating with at least one opening facing towards said X-ray detector is arranged in front of said X-ray detector. Said modulator grating is provided between said resolver grating and said substrate at a predetermined distance from said resolver grating and said substrate, where said modulator grating having a plurality of openings in at least a first direction, wherein said x-rays from said surface is spatially modulated with said modulator grating and resolver grating.

10. 发明公开

EP2988315A2 METHOD FOR ANALYZING AND/OR PROCESSING AN OBJECT AS WELL AS A PARTICLE BEAM DEVICE FOR CARRYING OUT THE METHOD 审中-公开
标题翻译：程序用于分析和/或处理一个对象，并粒子束用于执行该方法
公开(公告)号：EP2988315A2
公开(公告)日：2016-02-24
申请号：EP15177429.6
申请日：2015-07-20
申请人： Carl Zeiss Microscopy GmbH
发明人： Biberger, Josef , Lechner, Lorenz , Postolski, Michal , Pulwey, Ralph , Janaszewsk, Marcin
IPC分类号： H01J37/304 , H01J37/26
CPC分类号： H01J37/20 , H01J37/147 , H01J37/265 , H01J37/304 , H01J2237/30433
摘要： The application relates to a method for analyzing, in particular for imaging, and/or processing of an object as well as a particle beam device for carrying out this method. In particular, the particle beam device of this application is an electron beam device and/or an ion beam device. The method in particular comprises the control unit providing a first control parameter, wherein a beam guiding unit is controlled using the first control parameter for guiding the particle beam and/or wherein a moving unit is controlled using the first control parameter for moving an object holder, correlating a position of the object holder in a second coordinate system to the object position on the surface of the object, identifying a first coordinate transformation between the first coordinate system and the second coordinate system, identifying an orientation position of a distinctive feature on the surface of the object and identifying first coordinates of the orientation position in the first coordinate system, the control unit providing a second control parameter, wherein the second control parameter is used for at least one of: controlling the beam guiding unit for guiding the particle beam, controlling the moving unit for moving the object holder or controlling a detector, identifying again the orientation position of the distinctive feature and identifying second coordinates of the orientation position in the first coordinate system, comparing the first coordinates with the second coordinates, identifying a local displacement of the first coordinates to the second coordinates, identifying a second coordinate transformation using the first coordinate transformation and the local displacement and identifying a position of an area to be analyzed and/or processed on the surface of the object.
摘要翻译：本申请涉及一种用于分析，特别是用于成像和/或对象的处理，以及用于执行该方法的粒子射线装置。特别地，本申请的粒子射线装置是电子束装置和/或离子束装置上。特别地，该方法包括控制单元，其提供第一控制参数，worin光束引导单元使用所述第一控制参数控制用于引导颗粒束和/或worin移动单元使用所述第一控制参数用于移动到对象持有者控制，关联于第二对象保持器的位置坐标系统到物体的表面上的对象位置，识别所述第一坐标系和第二坐标系之间的第一坐标变换，确定对一个显着特点的取向位置所述物体的表面和识别定向位置的第一坐标的第一坐标系中，提供第二控制参数，worin第二控制参数，所述控制单元用于至少一个：控制所述光束引导单元用于引导所述粒子束，控制所述移动单元，用于在对象保持器或控制的检测器，ID 再次entifying显着特征的方位位置和第一坐标系中确定方位位置的第二坐标与第二坐标比较第一坐标，确定第一坐标，第二坐标的局部位移，确定第二坐标变换使用第一坐标变换和局部位移和识别的区域的位置进行分析和/或所述对象的表面上的处理。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式