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2. 发明公开

EP2416344A2 Ion sources, systems and methods 失效转让
标题翻译：离子源，系统和方法
公开(公告)号：EP2416344A2
公开(公告)日：2012-02-08
申请号：EP11183110.3
申请日：2006-11-15
申请人： Alis Corporation
发明人： Edinger, Klaus , Markwort, Lars , Mantz, Ulrich , Ward, Billy W. , Notte, John A. , Farkas, Louis , Percival, Randall , Hill, Raymond , Aderhold, Dirk
IPC分类号： H01J37/28 , H01J9/02 , H01J37/08 , H01J37/252 , H01J37/305 , H01J37/317 , B82Y10/00 , H01J27/26 , H01J37/20
CPC分类号： H01J9/02 , H01J37/08 , H01J37/20 , H01J37/252 , H01J37/28 , H01J37/3056 , H01J37/3174 , H01J2237/024 , H01J2237/0807 , H01J2237/202 , H01J2237/20228 , H01J2237/20264 , H01J2237/2566 , H01J2237/2623 , H01J2237/2812 , H01J2237/30438 , H01J2237/30477 , H01J2237/31737 , H01J2237/3174 , H01J2237/31755
摘要： The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample.
摘要翻译：本发明涉及一种方法，其包括以下步骤：提供具有三至二十个原子的端子架的导电尖端，通过使气体与导电尖端相互作用而产生第一离子束，提供离子光学系统通过离子光学系统消除第一离子束中的一些离子以产生第二离子束，所述第二离子束包括70％或更多的离子，其经由气体与导电尖端的端子架的一个原子的相互作用而产生，以及使第二离子束与活化气体相互作用以促进样品表面的化学反应。

3. 发明公开

EP1981060A3 Ion Implantation Apparatus and Method of Converging/Shaping Ion Beam Used Therefor 有权
标题翻译： Ionimplantationsvorrichtung以及用于聚焦和塑造Ionstrahls方法
公开(公告)号：EP1981060A3
公开(公告)日：2009-01-07
申请号：EP08103469.6
申请日：2008-04-09
申请人： SEN Corporation, an SHI and Axcelis Company
发明人： Tsukihara, Mitsukuni , Yagita, Takanori , Amano, Yoshitaka , Kabasawa, Mitsuaki
IPC分类号： H01J37/05 , H01J37/304 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/05 , H01J37/304 , H01J2237/30477
摘要： An ion implantation apparatus reciprocally scans an ion beam extracted from an ion source and passed through a mass analysis magnet apparatus and a mass analysis slit and irradiates to a wafer. The ion beam is converged and shaped by providing a first quadrupole vertical focusing electromagnet at a section of a beam line from an outlet of the mass analysis magnet apparatus before incidence of the mass analysis slit and providing a second quadrupole vertical focusing electromagnet having an effective magnetic field effect larger than that of the first quadrupole focusing electromagnet at a section of the beam line from an outlet of the mass analysis slit before incidence on the beam scanner.

4. 发明公开

EP1955351A2 ION SOURCES, SYSTEMS AND METHODS 失效转让
标题翻译：离子源，系统和方法
公开(公告)号：EP1955351A2
公开(公告)日：2008-08-13
申请号：EP06837735.7
申请日：2006-11-15
申请人： Alis Corporation
发明人： WARD, Billy W. , NOTTE IV, John A. , FARKAS III, Louis, S. , PERCIVAL, Randall G. , HILL, Raymond , GROHOLSKI, Alexander , COMUNALE, Richard
IPC分类号： H01J9/02
CPC分类号： H01J9/02 , H01J37/08 , H01J37/20 , H01J37/252 , H01J37/28 , H01J37/3056 , H01J37/3174 , H01J2237/024 , H01J2237/0807 , H01J2237/202 , H01J2237/20228 , H01J2237/20264 , H01J2237/2566 , H01J2237/2623 , H01J2237/2812 , H01J2237/30438 , H01J2237/30477 , H01J2237/31737 , H01J2237/3174 , H01J2237/31755
摘要： The present invention refers to a method that comprises the following steps: Providing an electrically conductive tip with a terminal shelf which has between three and twenty atoms, generating a first ion beam by interacting a gas with the electrically conductive tip, providing an ion optical system, eliminating by the ion optical system some of the ions in the first ion beam to generate a second ion beam comprising ions 70% or more of which are generated via interaction of the gas with one atom of the terminal shelf of the electrically conductive tip, and interacting the second ion beam with an activating gas to promote a chemical reaction at a surface of a sample. The figure shows a gas field ion microscope system (100).

5. 发明公开

EP1863065A2 Electrostatic beam deflection scanner and beam deflection scanning method 有权
标题翻译：扫描仪电视机和Verfahren zur Strahlablenkung
公开(公告)号：EP1863065A2
公开(公告)日：2007-12-05
申请号：EP07109255.5
申请日：2007-05-30
申请人： SEN Corporation, an SHI and Axcelis Company
发明人： Tsukihara, Mitsukuni , Kabasawa, Mitsuaki , Amano, Yoshitaka , Matsuhita, Hiroshi
IPC分类号： H01J37/147 , H01J37/153 , H01J37/317
CPC分类号： H01J37/153 , H01J37/1477 , H01J37/3171 , H01J2237/30477
摘要： The present invention provides for a beam deflection scanner (20) performs reciprocating deflection scanning with an ion beam or a charged particle beam to thereby periodically change a beam trajectory and comprises a pair of scanning electrodes (21A,21B) installed so as to be opposed to each other with the beam trajectory interposed therebetween and a pair of correction electrodes (27,28) installed in a direction perpendicular to an opposing direction of the pair of scanning electrodes, with the beam trajectory interposed therebetween, and extending along a beam traveling axis. Positive and negative potentials are alternately applied to the pair of scanning electrodes (21A,21B), while a correction voltage is constantly applied to the pair of correction electrodes (27,28). A correction electric field produced by the pair of correction electrodes (27,28) is exerted on the ion beam or the charged particle beam passing between the pair of scanning electrodes (21A,21B) at the time of switching between the positive and negative potentials.
摘要翻译：本发明提供了一种光束偏转扫描器（20），其利用离子束或带电粒子束进行往复偏转扫描，从而周期性地改变光束轨迹，并包括一对安装成相对的扫描电极（21A，21B）彼此之间具有光束轨迹，并且一对校正电极（27,28）安装在垂直于该对扫描电极的相反方向的方向上，其中光束轨迹插入其间，并且沿着光束移动轴线。在一对扫描电极（21A，21B）上交替地施加正电位和负电位，同时对该对校正电极（27,28）施加校正电压。一对校正电极（27,28）产生的校正电场施加在在正电位和负电位之间切换时在离子束或通过一对扫描电极（21A，21B）之间的带电粒子束。

6. 发明公开

EP1803140A2 DEVICE AND METHOD FOR MILLING OF MATERIAL USING IONS 有权
标题翻译：设备和方法加工材使用ION
公开(公告)号：EP1803140A2
公开(公告)日：2007-07-04
申请号：EP05776553.9
申请日：2005-07-27
申请人： E.A. Fischione Instruments Inc.
发明人： FISCHIONE, Paul E. , SMITH, David W. , SCHEINFEIN, Michael R. , MATESA, Joseph M. , SWIHART, Thomas C. , MARTIN, David
IPC分类号： H01J37/08
CPC分类号： H01J37/3002 , H01J37/08 , H01J37/20 , H01J37/22 , H01J37/244 , H01J37/305 , H01J2237/0822 , H01J2237/30477 , H01J2237/3174 , H01J2237/31745
摘要： A milling device is disclosed for the preparation of microscopy specimens or other surface science applications through the use of ion bombardment. The device provides the ability to utilize both gross and fine modification of the specimen surface through the use of high and low energy ion sources. Precise control of the location of the specimen within the impingement beams created by the ion sources provides the ability to tilt and rotate the specimen with respect thereto. Locational control also permits the translocation of the specimen between the various sources under programmatic control and under consistent vacuum conditions. A load lock mechanism is also provided to permit the introduction of specimens into the device without loss of vacuum and with the ability to return the specimen to ambient temperature during such load and unload operation. The specimen may be observed and imaged during all active phases of operation.

7. 发明授权

EP2807668B1 DEVICE FOR SIMULTANEOUS SPOT SIZE MEASUREMENT OF A PLURALITY OF BEAMS AT WAFER LEVEL USING A PLURALITY OF KNIFE EDGES AND A METHOD FOR MANUFACTURING SUCH A DEVICE 有权转让
标题翻译：装置：用于生产这种设备的多点SIZE粒子束晶片级上具有多刀切割和方法的同时测量
公开(公告)号：EP2807668B1
公开(公告)日：2017-03-08
申请号：EP12826637.6
申请日：2012-12-05
申请人： Mapper Lithography IP B.V.
发明人： MEIJER, Jan Andries , SCHEFFERS, Paul IJmert , SARR, Abdourahmane Ange
IPC分类号： H01J37/09 , H01J37/30 , H01J37/317 , H01J37/244
CPC分类号： H01J37/252 , B82Y10/00 , B82Y40/00 , H01J37/09 , H01J37/244 , H01J37/3002 , H01J37/3005 , H01J37/3174 , H01J37/3177 , H01J2237/2001 , H01J2237/24521 , H01J2237/2802 , H01J2237/30477 , H01J2237/31793

9. 发明公开

EP2807668A1 DEVICE FOR SPOT SIZE MEASUREMENT AT WAFER LEVEL USING A KNIFE EDGE AND A METHOD FOR MANUFACTURING SUCH A DEVICE 有权转让
标题翻译：装置：用于生产这种设备的多点SIZE粒子束晶片级上具有多刀切割和方法的同时测量
公开(公告)号：EP2807668A1
公开(公告)日：2014-12-03
申请号：EP12826637.6
申请日：2012-12-05
申请人： Mapper Lithography IP B.V.
发明人： MEIJER, Jan Andries , SCHEFFERS, Paul IJmert , SARR, Abdou
IPC分类号： H01J37/09 , H01J37/30 , H01J37/317
CPC分类号： H01J37/252 , B82Y10/00 , B82Y40/00 , H01J37/09 , H01J37/244 , H01J37/3002 , H01J37/3005 , H01J37/3174 , H01J37/3177 , H01J2237/2001 , H01J2237/24521 , H01J2237/2802 , H01J2237/30477 , H01J2237/31793
摘要： The invention relates to a device for spot size measurement at wafer level in a multi charged particle beam lithography system. The device comprises a knife edge structure on top of a scintillating material, such a YAG material. The knife edge structure is arranged in a Si wafer which has a top plane at a sharp angle to a (1 1 0) plane of the Si. In an embodiment the angle is in the range from 2 to 4 degrees, preferably in the range from 2.9 - 3.1 degrees. The invention relates in addition to a method for manufacturing a device for spot size measurement at wafer level in a multi charged particle beam lithography system.
摘要翻译：本发明涉及在多带电粒子束光刻系统晶片级为光斑尺寸测量的装置，该装置包括一个刀刃结构上的闪烁材料的顶部上，寻求YAG材料。在其中以锐角与Si的（110）面具有顶面的Si晶片刀口结构被布置。在角度的实施方式是在从2到4度的范围内，优选在2.9-3.1度的范围内。本发明涉及除了用于在多带电粒子束光刻系统中的晶片级制造用于光点尺寸测量设备的方法。

10. 发明授权

EP2068343B1 Charged particle source with automated tip formation 有权
标题翻译：具有自动尖端结构带电粒子源
公开(公告)号：EP2068343B1
公开(公告)日：2011-08-31
申请号：EP07022031.4
申请日：2007-11-13
申请人： ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH
发明人： Winkler, Dieter , Weigel, Udo , Grimm, Stefan
IPC分类号： H01J37/073 , H01J37/08 , H01J37/26 , H01J37/304 , H01J9/00 , H01J27/26
CPC分类号： H01J37/073 , H01J27/26 , H01J37/08 , H01J37/265 , H01J37/304 , H01J2237/06341 , H01J2237/0805 , H01J2237/0807 , H01J2237/30466 , H01J2237/30477 , H01J2237/31749

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