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1. 发明公开

EP1936655A2 Methods and apparatus for alignment of ion beam systems using beam current sensors 审中-公开
标题翻译：一种用于经由所述离子束的磁刚度和偏转磁场校正的离子注入装置的方法。
公开(公告)号：EP1936655A2
公开(公告)日：2008-06-25
申请号：EP07024689.7
申请日：2000-06-29
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Cucchetti, Antonella , Klos, Leo Vincent , Olson, Joseph C. , Pelletier, Raymond L. , Pierce, Keith , Renau, Anthony , Smatlak, Donna
IPC分类号： H01J37/317
CPC分类号： G21K1/08 , G21K1/093 , G21K5/04 , G21K5/10 , H01J37/304 , H01J37/3171 , H01J2237/24405 , H01J2237/24528 , H01J2237/30433 , H01J2237/30472
摘要： The present invention relates to a method for determining a relation between magnetic rigidity R of an ion beam (46) and magnetic field B required to direct the ion beam (46) along a desired path in an ion implanter, comprising the steps of: positioning a beam current sensor (120) on or adjacent to the desired path, said beam current sensor (120) having a sensing aperture (152) that is smaller than a cross-sectional dimension of the ion beam (46) at the beam current sensor (120); using the beam current sensor (120) to determine a first magnetic field B 1 required to direct a first ion beam (46) having a first magnetic rigidity R 1 along the desired path; using the beam current sensor (120) to determine a second magnetic field B 2 required to direct a second ion beam (46) having a second magnetic rigidity R 2 along the desired path; and from the values of B 1 , B 2 , R 1 and R 2 , calculating values of a 0 and a 1 in the equation: B=a 1 R+a 0 thereby providing a relation between magnetic rigidity R of an ion beam (46) and magnetic field B for the ion implanter.
摘要翻译：本发明涉及一种用于确定开采的方法的离子束（46）的磁刚度R和以沿着期望的路径的离子束（46）在离子注入机所需的磁场B，其包括以下步骤之间的关系：定位做了电子束电流传感器（120）上或邻近期望路径，所述电子束电流传感器（120）具有传感器孔（152）是比在离子束电流感应的离子束（46）的横截面尺寸更小的（120）; 使用电子束电流传感器（120），以确定引导具有第一磁刚度，R 1沿所期望的路径的第一离子束（46）所需的第一磁场B 1; 使用电子束电流传感器（120）确定以引导具有第二磁刚度R 2沿所期望的路径的第二离子束（46）所需的第二磁场B 2; 和从B 1，B 2，R 1和R 2的值，计算和的一个0值的方程中的1：B = 1个R + A 0，从而提供（离子束的磁刚度R的关系 46）和磁场B的离子注入机。

2. 发明公开

EP1936655A3 Method of calibrating an ion implanter via the magnetic rigidity of an ion beam and its deflecting magnetic field. 审中-公开
标题翻译：一种用于经由所述离子束的磁刚度和偏转磁场校正的离子注入装置的方法。
公开(公告)号：EP1936655A3
公开(公告)日：2008-10-29
申请号：EP07024689.7
申请日：2000-06-29
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Cucchetti, Antonella , Klos, Leo Vincent , Olson, Joseph C. , Pelletier, Raymond L. , Pierce, Keith , Renau, Anthony , Smatlak, Donna
IPC分类号： H01J37/317 , H01J37/244
CPC分类号： G21K1/08 , G21K1/093 , G21K5/04 , G21K5/10 , H01J37/304 , H01J37/3171 , H01J2237/24405 , H01J2237/24528 , H01J2237/30433 , H01J2237/30472
摘要： The present invention relates to a method for determining a relation between magnetic rigidity R of an ion beam (46) and magnetic field B required to direct the ion beam (46) along a desired path in an ion implanter, comprising the steps of: positioning a beam current sensor (120) on or adjacent to the desired path, said beam current sensor (120) having a sensing aperture (152) that is smaller than a cross-sectional dimension of the ion beam (46) at the beam current sensor (120); using the beam current sensor (120) to determine a first magnetic field B 1 required to direct a first ion beam (46) having a first magnetic rigidity R 1 along the desired path; using the beam current sensor (120) to determine a second magnetic field B 2 required to direct a second ion beam (46) having a second magnetic rigidity R 2 along the desired path; and from the values of B 1 , B 2 , R 1 and R 2 , calculating values of a 0 and a 1 in the equation: B=a 1 R+a 0 thereby providing a relation between magnetic rigidity R of an ion beam (46) and magnetic field B for the ion implanter.

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