会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 12. 发明公开
    • Imaging a sample with multiple beams and a single detector
    • Abbildung einer Probe mittels mehrerer Strahlen und einem einzigen Detektor
    • EP2924710A1
    • 2015-09-30
    • EP14161519.5
    • 2014-03-25
    • FEI COMPANY
    • Potocek, PavelKooijman, CornelisSlingerland, HendrikVeen, van, GerardBoughorbel, FaysalFaber, Pybe
    • H01J37/28H01J37/30
    • H01J37/28H01J37/3005H01J2237/226H01J2237/24495H01J2237/30466H01J2237/31749
    • The invention relates to a multi-beam apparatus (210) for inspecting a sample (232) with at least a first focused beam and a second focused beam, the apparatus equipped to scan the first and the second beam (243, 218) over the sample, the apparatus equipped with at least one detector (240) for detecting secondary radiation emitted by the sample when said sample is irradiated by the first and the second beam, the detector capable of outputting a detector signal representing the intensity of the secondary radiation detected by the detector, in working the detector signal comprising information caused by the first and the second beam, characterized in that the apparatus is equipped with a programmable controller (219) programmed for processing the detector signal using a source separation technique, as a result of which the programmable controller is equipped to output a signal representing information caused by a single beam.
    • 本发明涉及一种用于使用至少第一聚焦光束和第二聚焦光束来检测样品(232)的多光束装置(210),该装置被配备成扫描第一和第二光束(243,218) 所述装置配备有至少一个检测器(240),用于当所述样品被所述第一和第二光束照射时检测由所述样品发射的次级辐射,所述检测器能够输出表示检测到的次级辐射的强度的检测器信号 通过检测器处理包括由第一和第二光束引起的信息的检测器信号,其特征在于,该装置配备有可编程控制器(219),其被编程为使用源分离技术来处理检测器信号,作为 可编程控制器被配备为输出表示由单个波束引起的信息的信号。
    • 17. 发明公开
    • Forming an image while milling a work piece
    • Erzeugung eines BildeswährenddesFräsenseinesWerkstücks
    • EP2233907A1
    • 2010-09-29
    • EP09156391.6
    • 2009-03-27
    • FEI Company
    • Faber, PybeGeurts, Remco
    • G01N1/28H01J37/305H01J37/304
    • H01J37/3056G01N1/286H01J37/304H01J2237/30466H01J2237/31745H01J2237/31749
    • Dual beam instruments, comprising a Scanning Electron Microscope (SEM) column for imaging and a Focused Ion Beam (FIB) column for milling, are routinely used to extract samples (lamellae) from semiconductor waters. By observing the progress of the milling with the SEM column, end pointing of the milling process can be performed.
      The invention offers an alternative solution to this problem, in which an instrument with only a FIB column is used.
      For milling a lamella (105) to its final thickness of, for example, 30 nm, the focused ion beam (100), is scanned repeatedly along the lamella. It is found that while milling the lamella a signal can be derived from the lamella that is sufficient for end pointing. No additional electron beam for inspection is needed.
    • 常规使用包括用于成像的扫描电子显微镜(SEM)柱和用于研磨的聚焦离子束(FIB)柱)的双光束仪器从半导体水中提取样品(薄片)。 通过观察用SEM柱研磨的进度,可以进行研磨过程的结束指示。 本发明提供了该问题的替代解决方案,其中仅使用具有FIB列的仪器。 为了将薄片(105)研磨至例如30nm的最终厚度,聚焦离子束(100)沿薄片反复扫描。 发现在铣削薄片时,信号可以从对于终点指示足够的薄片获得。 不需要额外的电子束进行检查。
    • 18. 发明公开
    • Forming an image while milling a work piece
    • 在铣削工件时形成图像
    • EP2233906A1
    • 2010-09-29
    • EP10157861.5
    • 2010-03-26
    • FEI COMPANY
    • Faber, PybeGeurts, Remco
    • G01N1/28H01J37/305H01J37/304
    • H01J37/3056G01N1/286H01J37/304H01J2237/30466H01J2237/31745H01J2237/31749
    • Dual beam instruments, comprising a Scanning Electron Microscope (SEM) column for imaging and a Focused Ion Beam (FIB) column for milling, are routinely used to extract samples (lamellae) from semiconductor wafers. By observing the progress of the milling with the SEM column, end pointing of the milling process can be performed.
      The invention offers an alternative solution to this problem, in which an instrument with only a FIB column is used.
      For milling a lamella (105) to its final thickness of, for example, 30 nm, the focused ion beam (100), is scanned repeatedly along the lamella. It is found that while milling the lamella a signal can be derived from the lamella that is sufficient for end pointing. No additional electron beam for inspection is needed.
    • 包含用于成像的扫描电子显微镜(SEM)柱和用于研磨的聚焦离子束(FIB)柱的双光束仪器常规用于从半导体晶片提取样品(薄片)。 通过观察SEM柱的铣削进度,可以进行铣削过程的终点。 本发明为这个问题提供了另一种解决方案,其中使用仅具有FIB柱的仪器。 为了将薄片(105)研磨至例如30nm的最终厚度,沿着薄片重复扫描聚焦离子束(100)。 据发现,在碾磨薄片时,可以从薄片中得到足以用于结束指向的信号。 不需要额外的电子束进行检查。
    • 19. 发明公开
    • Method for milling and end-pointing a sample
    • Verfahren zumFräsenund zur Endpunktbestimm einer Probe
    • EP2149897A1
    • 2010-02-03
    • EP08161546.0
    • 2008-07-31
    • FEI COMPANY
    • Faber, PybeGeurts, Remco
    • H01J37/305H01J37/304
    • H01J37/3053H01J37/3045H01J2237/221H01J2237/30466H01J2237/3118H01J2237/3151
    • The invention relates to a method for end-pointing milling of a sample with a Focused Ion Beam apparatus (FIB). Known end-pointing results in interruption of the milling only after the feature of interest is exposed. This implies that for high-speed milling the feature may already be damaged when the milling is stopped. The invention discloses that images are made while milling, and that these images are matched with a 3D model of the sample, so that milling conditions can be changed before the feature is exposed. Milling can then progress at a lower speed, offering better control, or another removal technique, such as gas assisted milling with other gasses, can be used so as to minimize damage to the feature. Hereby the method according to the invention combines high removal rate and delicate control of removed thickness.
      It is noted that the invention is also applicable when other removal methods are used, such as e.g. laser ablation.
    • 本发明涉及用聚焦离子束装置(FIB)对样品进行端点铣削的方法。 已知的最终指向导致仅在感兴趣的特征暴露之后中断铣削。 这意味着对于高速铣削,铣削停止时,特征可能已被损坏。 本发明公开了在研磨时制作图像,并且这些图像与样品的3D模型相匹配,使得在特征曝光之前可以改变研磨条件。 铣削可以以更低的速度进行,提供更好的控制,或者可以使用另一种去除技术,例如使用其他气体的气体辅助研磨,以便最小化对特征的损害。 因此,根据本发明的方法结合了高去除率和去除厚度的精细控制。 应当注意,当使用其它去除方法时,本发明也适用,例如, 激光烧蚀。