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1. 发明公开

EP4356197A1 METHOD AND APPARATUS FOR PARTICLE BEAM-INDUCED PROCESSING OF A DEFECT OF A MICROLITHOGRAPHIC PHOTOMASK 审中-实审
公开(公告)号：EP4356197A1
公开(公告)日：2024-04-24
申请号：EP22737397.4
申请日：2022-06-15
申请人： Carl Zeiss SMT GmbH
发明人： RENSING, Christian , BRENDEL, Michael , BUDACH, Michael , REUSS, Martin Guenter
IPC分类号： G03F1/74 , G03F1/72 , G03F1/80 , C23F1/12 , C23F4/00
CPC分类号： G03F1/74 , G03F1/72 , G03F1/80

2. 发明公开

EP3272432A2 DEBRIS REMOVAL FROM HIGH ASPECT STRUCTURES 有权转让
标题翻译：从高高度结构去除残骸
公开(公告)号：EP3272432A2
公开(公告)日：2018-01-24
申请号：EP17172136.8
申请日：2017-05-22
申请人： Rave LLC
发明人： ROBINSON, Tod Evan , ARRUZA, Bernabe J. , ROESSLER, Kenneth Gilbert , BRINKLEY, David , LECLAIRE, Jeffrey E.
IPC分类号： B08B7/00 , G03F1/82
CPC分类号： G03F1/72 , G01N23/2252 , G01N23/2273 , G01N2021/95676 , G01N2223/6116 , G01N2223/652 , G01Q20/02 , G01Q60/42 , G01Q70/12 , G01Q80/00
摘要： A debris collection and metrology system for collecting and analyzing debris from a tip used in nanomachining processes, the system including an irradiation source, an irradiation detector, an actuator, and a controller. The irradiation source is operable to direct incident irradiation onto the tip, and the irradiation detector is operable to receive a sample irradiation from the tip, the sample irradiation being generated as a result of the direct incident irradiation being applied onto the tip. The controller is operatively coupled to an actuator system and the irradiation detector, and the controller is operable to receive a first signal based on a first response of the irradiation detector to the sample irradiation, and the controller is operable to effect relative motion between the tip and at least one of the irradiation source and the irradiation detector based on the first signal.
摘要翻译：用于收集和分析纳米加工过程中使用的尖端碎片的碎片收集和测量系统，该系统包括辐照源，辐照检测器，致动器和控制器。照射源可操作以将入射照射引导至尖端，并且照射检测器可操作以接收来自尖端的样本照射，样本照射是由于直接入射照射施加至尖端而产生的。控制器可操作地耦合到致动器系统和辐射检测器，并且控制器可操作以基于辐照检测器对样本辐照的第一响应接收第一信号，并且控制器可操作以实现尖端以及基于第一信号的照射源和照射检测器中的至少一个。

3. 发明公开

EP2921907A2 MASK MANUFACTURING EQUIPMENT AND MASK MAUFACTURING METHOD 审中-公开
标题翻译：面罩制造设备和面罩制造方法
公开(公告)号：EP2921907A2
公开(公告)日：2015-09-23
申请号：EP15158388.7
申请日：2015-03-10
申请人： Kabushiki Kaisha Toshiba
发明人： Kugimiya, Tetsuya , Fukuhara, Kazuya , Sato, Hidenori
IPC分类号： G03F1/00 , G03F1/72 , G03F1/84
CPC分类号： G03F7/70191 , G03F1/00 , G03F1/72 , G03F1/82 , G03F1/84
摘要： According to an embodiment, mask manufacturing equipment includes a detector, an irradiator, a calculator, and a controller. The detector detects positional deviation of a pattern formed on a mask substrate. The irradiator irradiates the mask substrate with laser light to form a heterogeneous layer that is expanded in volume in the mask substrate. The calculator calculates an area periphery irradiation condition under which the irradiator is caused to emit laser light to a peripheral area of the pattern on the basis of the positional deviation detected by the detector so that the pattern area is reduced by forming the heterogeneous layer in the peripheral area of the pattern. The controller controls the irradiator to form the heterogeneous layer in the peripheral area of the pattern according to the area periphery irradiation condition.
摘要翻译：根据一个实施例，掩模制造设备包括检测器，辐照器，计算器和控制器。检测器检测形成在掩模基板上的图案的位置偏差。照射器用激光照射掩模衬底以形成在掩模衬底中体积膨胀的异质层。计算器基于由检测器检测到的位置偏差来计算使辐照器向图案的周边区域发射激光的区域周边辐照条件，从而通过在图案区域中形成异质层来减小图案区域图案的周边区域。控制器根据区域周边照射条件控制照射器以在图案的周边区域中形成异质层。

4. 发明授权

EP1587113B1 Stylus system for modifying small structures 有权
标题翻译：笔设备来修改小结构。
公开(公告)号：EP1587113B1
公开(公告)日：2012-10-03
申请号：EP05075824.2
申请日：2005-04-11
申请人： FEI COMPANY
发明人： Linder, Robert , Kneedler, Eric
IPC分类号： G01Q70/00 , G01Q80/00 , B82Y35/00 , G03F1/72 , G03F1/00
CPC分类号： G03F1/72 , G01Q80/00 , Y10S977/856
摘要： An improved method for rapidly and accurately modifying small structures, including structures on a micron or nanometer scale, suitable for the repair of defects in lithographic photo-masks and semiconductors on a nano-scopic level. Features or samples repaired may be conductive or non-conductive. A single instrument can be employed to both observe the surface of the mask or wafer, and to effectuate the repair of conductive and non-conductive features thereon. Using a Stylus-Nano-Profilometer probe, rapid lateral strokes across the sample surface in a definable pattern at known high applied pressure are used to effectuate defect repair. The tip of the probe can also be dithered rapidly in a pattern or used as to create a jackhammer effect to more effectively remove material from the sample surface.

5. 发明授权

EP1336130B1 MITIGATION OF MULTILAYER DEFECTS ON A RETICLE 有权
标题翻译：失败的投影屏幕还原
公开(公告)号：EP1336130B1
公开(公告)日：2010-03-17
申请号：EP01966608.0
申请日：2001-09-05
申请人： EUV Limited Liability Corporation
发明人： STEARNS, Daniel, G. , SWEENEY, Donald, W. , MIRKARIMI, Paul, B.
IPC分类号： G03F1/14 , G02B5/08 , G03F1/00
CPC分类号： G02B5/285 , B82Y10/00 , B82Y40/00 , G02B5/0891 , G02B27/32 , G03F1/24 , G03F1/72 , G21K1/062 , G21K2201/067
摘要： A method is provided for repairing defects in a multilayer coating layered onto a reticle blank used in an extreme ultraviolet lithography (EUVL) system. Using high lateral spatial resolution, energy is deposited in the multilayer coating in the vicinity of the defect. Thiscan be accomplished using a focused electron beam, focused ion beam or a focused electromagnetic radiation. The absorbed energy will cause a structural modification of the film,producing a localized change in the film thickness. The change in film thickness can be controlled with sub-nanometer accuracy by adjusting the energy dose. The lateral spatial resolution of the thickness modification is controlled by the localization of the energy deposition. The film thickness is adjusted locally to correct the perturbation of the reflectedfield. For example, when the structural modification is a localized film contraction, the repairof a defect consists of flattening a mound or spreading out the sides of a depression.

6. 发明公开

EP1710327A3 Method of selective etching by using a focused ion beam, an electron beam or a laser beam 有权
标题翻译：一种用于通过离子，电子或激光束选择性地蚀刻方法
公开(公告)号：EP1710327A3
公开(公告)日：2007-11-14
申请号：EP06112344.4
申请日：2006-04-07
申请人： FEI COMPANY
发明人： Bret, Tristan , Hoffmann, Patrik , Rossi, Michel , Multone, Xavier
IPC分类号： G03F1/00 , H01J37/305 , C23F4/00 , C23F4/02
CPC分类号： C23F4/00 , C23F4/02 , G03F1/72 , G03F1/74 , H01J2237/31744
摘要： A method and apparatus for local beam processing using a beam activated gas to etch material are described. Compounds are disclosed that are suitable for beam-induced etching. The invention is particularly suitable for electron beam induced etching of chromium materials on lithography masks. In one embodiment, a polar compound, such as CINO 2 gas, is activated by the electron beam to selectively etch a chromium material on a quartz substrate. By using an electron beam in place of an ion beam, many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch significantly the substrate.

7. 发明公开

EP1587113A3 Stylus system for modifying small structures 有权
标题翻译：笔设备来修改小结构。
公开(公告)号：EP1587113A3
公开(公告)日：2006-08-02
申请号：EP05075824.2
申请日：2005-04-11
申请人： FEI COMPANY
发明人： Linder, Robert , Kneedler, Eric
IPC分类号： G01N13/16 , G12B21/02 , G03F1/00 , G12B21/20
CPC分类号： G03F1/72 , G01Q80/00 , Y10S977/856
摘要： An improved method for rapidly and accurately modifying small structures, including structures on a micron or nanometer scale, suitable for the repair of defects in lithographic photo-masks and semiconductors on a nano-scopic level. Features or samples repaired may be conductive or non-conductive. A single instrument can be employed to both observe the surface of the mask or wafer, and to effectuate the repair of conductive and non-conductive features thereon. Using a Stylus-Nano-Profilometer probe, rapid lateral strokes across the sample surface in a definable pattern at known high applied pressure are used to effectuate defect repair. The tip of the probe can also be dithered rapidly in a pattern or used as to create a jackhammer effect to more effectively remove material from the sample surface.

8. 发明授权

EP1248963B1 MITIGATION OF SUBSTRATE DEFECTS IN RETICLES USING MULTILAYER BUFFER LAYERS 有权
标题翻译： VERRINGERUNG VON SUBSTRATDEFEKTEN在MASKEN MITHILFE VON PUFFERSCHICHTEN
公开(公告)号：EP1248963B1
公开(公告)日：2006-03-22
申请号：EP00980464.2
申请日：2000-11-16
申请人： The Regents of the University of California
发明人： MIRKARIMII, Paul, B. , BAJT, Sasa , STEARNS, Daniel, G.
IPC分类号： G03F1/14
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/24 , G03F1/38 , G03F1/72
摘要： A multilayer film is used as a buffer layer to minimize the size of defects on a reticle substrate prior to deposition of a reflective coating on the substrate. The multilayer buffer layer deposited intermediate the reticle substrate and the reflective coating produces a smoothing of small particles and other defects on the reticle substrate. The reduction in defect size is controlled by surface relaxation during the buffer layer growth process and bY the degree of intermixing and volume contraction of the materials at the multilayer interfaces. The buffer layers are deposited at near-normal incidence via a low particulate ion beam sputtering process. The growth surface of the buffer layer may also be heated by a secondary ion source to increase the degree of intermixing and improve the mitigation of defects.
摘要翻译：在将反射涂层沉积在基底上之前，多层膜用作缓冲层以最小化掩模版基板上的缺陷的尺寸。沉积在掩模版基板和反射涂层之间的多层缓冲层在掩模版基板上产生平滑的小颗粒和其它缺陷。缺陷尺寸的减小由缓冲层生长过程中的表面弛豫以及多层界面处的材料的混合和体积收缩程度来控制。缓冲层通过低粒度离子束溅射工艺以近正常入射沉积。缓冲层的生长表面也可以被二次离子源加热以增加混合程度并改善缺陷的减轻。

9. 发明授权

EP1137967B1 METHOD FOR MASK REPAIR USING DEFECT COMPENSATION 有权
标题翻译：法修正一个光掩膜的给予补偿的缺陷
公开(公告)号：EP1137967B1
公开(公告)日：2006-02-22
申请号：EP99962966.0
申请日：1999-12-01
申请人： EUV Limited Liability Corporation
发明人： SWEENEY, Donald, W. , RAY-CHAUDHURI, Avijit, K.
IPC分类号： G03F1/00 , G03F1/14
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/72
摘要： A method for repair of amplitude and/or phase defects in lithographic masks. The method involves modifying or altering a portion of the absorber pattern on the surface of the mask blank proximate to the mask defect to compensate for the local disturbance (amplitude or phase) of the optical field due to the defect.

10. 发明公开

EP1300857A2 Apparatus and methods for surficial milling of selected regions on surfaces of multilayer-film reflective mirrors as used in X-ray optical systems 审中-公开
标题翻译：装置和方法用于多层膜的反射在X射线光学系统中使用的反射镜选择的表面区域的表面切削
公开(公告)号：EP1300857A2
公开(公告)日：2003-04-09
申请号：EP02020962.3
申请日：2002-09-19
申请人： Nikon Corporation
发明人： Oshino, Tetsuya c/o Nikon Corporation , Murakami, Katsuhikoa c/o Nikon Corporation , Kondo, Hiroyuki c/o Nikon Corporation , Sugisaki, Katsumi c/o Nikon Corporation , Yamamoto, Masaki c/o Nikon Corporation
IPC分类号： G21K1/06 , G03F7/20
CPC分类号： G03F7/70316 , B82Y10/00 , B82Y40/00 , G02B5/0816 , G02B27/62 , G03F1/24 , G03F1/26 , G03F1/72 , G21K1/062 , G21K2201/067
摘要： Apparatus and methods are disclosed for milling selected regions on the surface of a multilayer-film reflective surface of an X-ray mirror with high accuracy and precision. The milling operation is performed to correct the reflected wavefront produced by the mirror, thereby producing a more uniform or otherwise more desirable phase distribution of the reflected wavefront. The milled multilayer films include multiple lamina sets each comprising respective layers of at least two respective substances. The layers usually are "stacked" in an alternating manner at a fixed period length on a mirror substrate. By selectively removing one or more surficial layers in selected locations, the methods and apparatus disclosed herein provide local corrections of the phase shift of the reflective wavefront. At each milling location on the multilayer-film surface, the depth profile can be stepwise or smoothly gradated. Milling methods can include lapping, ion-beam bombardment, plasma-enhanced chemical vapor machining (CVM), reactive-ion etching, photochemical reactions, or laser ablation.
摘要翻译：设备和方法盘游离缺失对具有高准确度和精度的X射线反射镜的多层膜反射面的表面上的研磨选择的区域。在球磨操作执行以校正由反射镜产生的反射波面，由此产生的反射波前的更均匀的或以其它方式更期望的相位分布。将研磨过的多层膜包括多个薄层设置至少两个respectivement物质的每一个都包括respectivement层。这些层通常是在上反射镜基板的固定周期长度以交替的方式“层叠”。通过在选定的位置选择性地去除一个或多个表层的层，在游离缺失的方法和装置提供盘反射波前的相移的本地校正。在多层膜表面上的每个位置铣削，深度轮廓可以是阶梯式的或平滑渐变。研磨方法可包括研磨，离子束轰击，等离子体增强化学气相加工（CVM），蚀刻反应离子，光化学反应，或激光烧蚀。

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