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91. 发明公开

EP3086374A1 PROCÉDÉ DE RÉALISATION D'UN DISPOSITIF À EFFET DE CHAMP AMÉLIORÉ 有权
标题翻译：制造改进的场效应器件的方法
公开(公告)号：EP3086374A1
公开(公告)日：2016-10-26
申请号：EP16166723.3
申请日：2016-04-22
申请人： Commissariat à l'Energie Atomique et aux Energies Alternatives
发明人： Previtali, Bernard
IPC分类号： H01L29/66 , H01L27/12 , H01L29/786 , H01L29/417
CPC分类号： H01L29/0642 , H01L21/02636 , H01L21/28008 , H01L21/308 , H01L21/31055 , H01L21/7624 , H01L27/1266 , H01L29/41725 , H01L29/41733 , H01L29/6656 , H01L29/66636 , H01L29/66772 , H01L29/78648
摘要： Un substrat de type SOI est recouvert par un motif en matériau semi-conducteur qui comporte un motif de partage (8) en matériau électriquement isolant. Le motif de partage (8) est enrobé par un ou plusieurs matériaux semi-conducteurs. Le motif en matériau semi-conducteur est recouvert par une électrode de grille (3) qui fait face au motif de partage (8). Le motif en matériau semi-conducteur et le motif de grille (3) sont recouverts par une couche de recouvrement (13b). Le substrat est éliminé pour accéder aux zones de source/drain (5, 6). Deux motifs de délimitation (17) sont formés pour recouvrir les zones de source (5) et de drain (6) et laisser libre le motif de partage (8). Une deuxième couche de couverture (19) est déposée et des trous d'accès sont formés pour accéder aux zones de source/drain (5, 6) par élimination des motifs de délimitation (17).
摘要翻译： SOI型衬底被具有电绝缘材料分隔图案（8）的半导体材料图案覆盖。分隔图案（8）涂覆有一种或多种半导体材料。半导体材料的图案被面向分隔图案（8）的栅电极（3）覆盖。半导体材料和栅格图案（3）的图案被覆盖层（13b）覆盖。衬底被移除以进入源极/漏极区域（5,6）。形成两个勾画图案（17）以覆盖源（5）和漏区（6）区域并使共享图案（8）自由。沉积第二覆盖层（19）并且形成通路孔以通过消除边界图案（17）来访问源极/漏极区域（5,6）。

92. 发明公开

EP2937895A4 MANUFACTURING METHOD OF MULTI-GATE FIN FIELD-EFFECT TRANSISTOR 审中-公开
标题翻译：工艺生产具有多栅极肋骨场效应晶体管
公开(公告)号：EP2937895A4
公开(公告)日：2016-04-20
申请号：EP14749414
申请日：2014-02-07
申请人： HUAWEI TECH CO LTD
发明人： ZHAO JING
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L29/66795 , H01L21/28008

93. 发明公开

EP2898532A1 GATE CONTACT STRUCTURE OVER ACTIVE GATE AND METHOD TO FABRICATE SAME 审中-实审
标题翻译：其制造积极的门栅接触的结构和方法
公开(公告)号：EP2898532A1
公开(公告)日：2015-07-29
申请号：EP13838318.7
申请日：2013-08-28
申请人： Intel Corporation
发明人： PETHE, Abhijit Jayant , GHANI, Tahir , BOHR, Mark , WEBB, Clair , GOMEZ, Harry , CAPPELLANI, Annalisa
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/76897 , H01L21/28008 , H01L21/31111 , H01L21/76807 , H01L21/76834 , H01L21/76895 , H01L23/5226 , H01L23/53257 , H01L29/66545 , H01L29/66583 , H01L29/785
摘要： Gate contact structures disposed over active portions of gates and methods of forming such gate contact structures are described. For example, a semiconductor structure includes a substrate having an active region and an isolation region. A gate structure has a portion disposed above the active region and a portion disposed above the isolation region of the substrate. Source and drain regions are disposed in the active region of the substrate, on either side of the portion of the gate structure disposed above the active region. A gate contact structure is disposed on the portion of the gate structure disposed above the active region of the substrate.

94. 发明公开

EP2763177A1 Procédé de fabrication d'un transistor MOS à espaceurs d'air 审中-公开
标题翻译： Herstellungsverfahren eines MOS-Transistors mit Luftabstandhaltern
公开(公告)号：EP2763177A1
公开(公告)日：2014-08-06
申请号：EP14153839.7
申请日：2014-02-04
申请人： STmicroelectronics SA , STMicroelectronics (Crolles 2) SAS , COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Niebojewski, Heimanu , Morand, Yves , Le Royer, Cyrille
IPC分类号： H01L29/49 , H01L29/423 , H01L21/28 , H01L29/66
CPC分类号： H01L29/49 , H01L21/28008 , H01L21/28114 , H01L29/42376 , H01L29/4925 , H01L29/4991 , H01L29/6653
摘要： L'invention concerne un transistor MOS comprenant, au-dessus d'un isolant de grille (4), un empilement conducteur de grille (6-7) ayant une hauteur, une longueur et une largeur, cet empilement ayant une partie basse (6) voisine de l'isolant de grille et une partie haute (7 ; 27 ; 50), dans lequel ledit empilement a une première longueur (L1) dans sa partie basse, et une deuxième longueur (L2) inférieure à la première longueur dans sa partie haute.
摘要翻译：晶体管具有导电栅堆叠，其包括靠近栅极绝缘体（4）的下部和上部。堆叠的上部和下部包括两个不同的长度，其中上部长度比下部长度短。上部长度为下部长度的0.3〜0.9倍左右。该叠层与限定真空间隔物（10）的电介质间隔物相邻。下部包括金属层的一部分，并且上部包括掺杂半导体层的一部分。堆叠的下部包括掺杂多晶硅层的层，并且上部包括掺杂的多晶硅 - 锗层。还包括用于制造MOS晶体管的方法的独立权利要求。

95. 发明公开

EP2722891A1 A thin film transistor and manufacturing method thereof, an array substrate and a display device 有权
标题翻译： Dünnschichttransistorund Herstellungsverfahrendafür，ein Array-Substrat und eine Anzeigevorrichtung
公开(公告)号：EP2722891A1
公开(公告)日：2014-04-23
申请号：EP13189461.0
申请日：2013-10-21
申请人： Boe Technology Group Co. Ltd.
发明人： Liu, Xiang , Wang, Gang
IPC分类号： H01L29/423 , H01L29/49 , H01L27/12 , H01L29/786
CPC分类号： H01L29/786 , H01L21/28008 , H01L27/124 , H01L29/42384 , H01L29/4908 , H01L29/66742 , H01L29/7869
摘要： Embodiments of the present invention provide a thin film transistor and its manufacturing method, an array substrate and a display device, to improve the electrical performance of the thin film transistor and improve the picture quality of images displayed by the display device. The thin film transistor includes: a substrate; a gate, a source, a drain and a semiconductor layer formed on the substrate; a first gate protection layer; a gate isolation layer; and a second gate protection layer. The first gate protection layer is at least partly located between the gate and the semiconductor layer, and is an insulating layer. The gate isolation layer is at least partly located between the first gate protection layer and the second gate protection layer, and is a conductive layer. The second gate protection layer is at least partly located between the gate isolation layer and the semiconductor layer, and is an insulating layer.
摘要翻译：本发明的实施例提供薄膜晶体管及其制造方法，阵列基板和显示装置，以改善薄膜晶体管的电气性能并提高由显示装置显示的图像的图像质量。薄膜晶体管包括：基板; 形成在基板上的栅极，源极，漏极和半导体层; 第一栅极保护层; 栅极隔离层; 和第二栅极保护层。第一栅极保护层至少部分地位于栅极和半导体层之间，并且是绝缘层。栅极隔离层至少部分地位于第一栅极保护层和第二栅极保护层之间，并且是导电层。第二栅极保护层至少部分地位于栅极隔离层和半导体层之间，并且是绝缘层。

96. 发明公开

EP2449593A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：EP2449593A1
公开(公告)日：2012-05-09
申请号：EP10793992.8
申请日：2010-06-09
申请人： Semiconductor Energy Laboratory Co, Ltd.
发明人： OIKAWA, Yoshiaki , OKAZAKI, Kenichi , MARUYAMA, Hotaka
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/66969 , H01L21/02502 , H01L21/02565 , H01L21/02664 , H01L21/28008 , H01L27/1225 , H01L29/7869 , H01L29/78696
摘要： Disclosed is a method to manufacture a thin film transistor having an oxide semiconductor as a channel formation region. The method includes; forming an oxide semiconductor layer over a gate insulating layer; forming a source and drain electrode layers over and in contact with the oxide semiconductor layer so that at least portion of the oxide semiconductor layer is exposed; and forming an oxide insulating film over and in contact with the oxide semiconductor layer. The exposed portion of the oxide semiconductor may be exposed to a gas containing oxygen in the presence of plasma before the formation of the oxide insulating film. The method allows oxygen to be diffused into the oxide semiconductor layer, which contributes to the excellent characteristics of the thin film transistor.
摘要翻译：公开了一种制造具有氧化物半导体作为沟道形成区的薄膜晶体管的方法。该方法包括：在栅极绝缘层上形成氧化物半导体层; 在所述氧化物半导体层上形成源电极层和漏电极层，并使所述氧化物半导体层的至少一部分露出; 以及在氧化物半导体层上并与之接触形成氧化物绝缘膜。在形成氧化物绝缘膜之前，氧化物半导体的暴露部分可以在存在等离子体的情况下暴露于含氧气体。该方法允许氧扩散到氧化物半导体层中，这有助于薄膜晶体管的优异特性。

97. 发明公开

EP2376434A1 FUNKTIONELLES MATERIAL FÜR GEDRUCKTE ELEKTRONISCHE BAUTEILE 有权
标题翻译： FUNKTIONELLES材料FÜRGEDRUCKTE ELEKTRONISCHE BAUTEILE
公开(公告)号：EP2376434A1
公开(公告)日：2011-10-19
申请号：EP09799248.1
申请日：2009-12-10
申请人： Merck Patent GmbH
发明人： KUEGLER, Ralf , KLYSZCZ, Andreas , RENKER, Sabine , SCHNEIDER, Joerg J. , HOFFMANN, Rudolf
IPC分类号： C07C251/70 , C23C18/12 , H01L21/335 , H05K3/12 , H05K3/14
CPC分类号： H01L29/786 , C07C249/08 , C07F7/2204 , C23C18/1216 , C23C18/1279 , C23C18/1295 , C23C18/14 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02288 , H01L21/02348 , H01L21/28008 , H01L21/316 , H01L27/1225 , H01L27/1248 , H01L27/1292 , H01L29/45 , H01L29/4908 , H01L29/78603 , H01L29/7869 , H01L2924/0002 , C07C251/70 , H01L2924/00
摘要： The invention relates to a printable precursor made of a metal organic aluminum, gallium, neodymium, ruthenium, magnesium, hafnium, zirconium, indium, and/or tin complex and mixtures thereof comprising at least one ligand from the class of oximates, for electronic components, and to a production method. The invention further relates to a corresponding printed electronic component, preferably field effect transistors.
摘要翻译：本发明涉及一种可印刷前体，其包含有机金属铝，镓，钕，钌，镁，铪，锆，铟和/或锡络合物或其混合物，其含有至少一种来自锑酸盐类的配位体，，以及一个准备过程。本发明还涉及相应的印刷电子部件，优选场效应晶体管。

98. 发明公开

EP2109892A4 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：EP2109892A4
公开(公告)日：2011-03-23
申请号：EP08727446
申请日：2008-01-08
申请人： MAXPOWER SEMICONDUCTOR INC
发明人： DARWISH MOHAMED N
IPC分类号： H01L29/78 , H01L21/336 , H01L29/06 , H01L29/40
CPC分类号： H01L29/66734 , H01L21/02164 , H01L21/0217 , H01L21/02321 , H01L21/2003 , H01L21/265 , H01L21/2658 , H01L21/26586 , H01L21/28008 , H01L21/30604 , H01L21/324 , H01L21/76224 , H01L21/823885 , H01L29/0619 , H01L29/0634 , H01L29/0649 , H01L29/0653 , H01L29/0661 , H01L29/0692 , H01L29/0696 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/408 , H01L29/4236 , H01L29/42368 , H01L29/66537 , H01L29/66666 , H01L29/7802 , H01L29/7809 , H01L29/7811 , H01L29/7813 , H01L29/7827 , H01L29/7835
摘要： A semiconductor structure includes a number of semiconductor regions, a pair of dielectric regions and a pair of terminals. The first and second regions of the structure are respectively coupled to the first and second terminals. The third region of the structure is disposed between the first and second regions. The dielectric regions extend into the third region. A concentration of doping impurities present in the third region and a distance between the dielectric regions define an electrical characteristic of the structure. The electrical characteristic of the structure is independent of the width of the dielectric regions width. The first and second regions are of opposite conductivity types. The structure optionally includes a fourth region that extends into the third region, and surrounds a portion of the pair of dielectric regions. The interface region between the dielectric regions and the fourth region includes intentionally introduced charges.

99. 发明公开

EP2259288A3 Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment 有权
标题翻译：一种用于通过N2O来生产的碳化硅层上形成氧化物层的过程
公开(公告)号：EP2259288A3
公开(公告)日：2011-01-05
申请号：EP10179447.7
申请日：2002-04-12
申请人： Cree, Inc.
发明人： Das, Mrinal , Lipkin, Lori
IPC分类号： H01L21/28
CPC分类号： H01L21/02326 , H01L21/02337 , H01L21/049 , H01L21/28008 , H01L21/3145 , H01L29/1608 , H01L29/66068 , H01L29/7802 , H01L29/7827 , H01L29/7838
摘要： Silicon carbide structures are fabricated by fabricating a nitrided oxide layer on a layer of silicon carbide and annealing the nitrided oxide layer in an environment containing hydrogen. Such a fabrication of the nitrided oxide layer may be provided by forming the oxide layer in at least one of nitric oxide and nitrous oxide and/or annealing an oxide layer in at least one of nitric oxide and nitrous oxide. Alternatively, the nitrided oxide layer may be provided by fabricating an oxide layer and fabricating a nitride layer on the oxide layer so as to provide the nitrided oxide layer on which the nitride layer is fabricated. Furthermore, annealing the oxide layer may be provided as a separate step and/or substantially concurrently with another step such as fabricating the nitride layer or performing a contact anneal. The hydrogen environment may be pure hydrogen, hydrogen combined with other gases and/or result from a hydrogen precursor. Anneal temperatures of 400°C or greater are preferred.

100. 发明授权

EP1946379B1 REPLACEMENT METAL GATE TRANSISTORS WITH REDUCED GATE OXIDE LEAKAGE 有权
标题翻译： WITH REDUCED栅极氧化物LEAK REPLACEMENT金属栅极晶体管
公开(公告)号：EP1946379B1
公开(公告)日：2010-06-02
申请号：EP06836832.3
申请日：2006-11-02
申请人： ADVANCED MICRO DEVICES, INC.
发明人： PAN, James , PELLERIN, John
IPC分类号： H01L29/49 , H01L29/51 , H01L21/28 , H01L21/336
CPC分类号： H01L21/28008 , H01L21/28088 , H01L21/28238 , H01L29/495 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/66545

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