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1. 发明授权

EP0275075B1 Thin film transistor and method of making the same 失效
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：EP0275075B1
公开(公告)日：1992-04-15
申请号：EP88100305.7
申请日：1988-01-12
申请人： HOSIDEN CORPORATION
发明人： Ukai, Yasuhiro c/o Hosiden Electronics Co.,Ltd.
IPC分类号： H01L29/78 , H01L29/62 , H01L21/312
CPC分类号： H01L21/02118 , H01L21/02282 , H01L21/02285 , H01L21/02288 , H01L21/312 , H01L29/4908 , H01L29/4966 , H01L29/51
摘要： A source electrode (12) and a drain electrode (13) are formed apart on an insulating substrate (11), and a semiconductor layer (14) is formed on the szbstrate (11) between the source and drain electrodes (12, 13). An insulating organic molecular film (21) is formed all over the source and drain electrodes (12, 13) and the semiconductor layer (14). Ions are implanted into a selected top surface region of the insulating oganic molecular film (21) corresponding to the semiconductor layer (14), by which chains of molecules in the surface region to form free carbon, providing a conductive gate electrode (22) and the remaining part of the insulating organic molecular film (21) forming a gate insulating film (23).

2. 发明公开

EP0034455A3 Semiconductor device having a protective layer, and method for producing it 失效
标题翻译：具有保护层的半导体器件及其制造方法
公开(公告)号：EP0034455A3
公开(公告)日：1982-08-04
申请号：EP81300530
申请日：1981-02-10
申请人： FUJITSU LIMITED
发明人： Abiru, Akira , Sugimoto, Masahiro , Inomata, Juro
IPC分类号： H01L23/28 , H01L21/312 , H01L23/02
CPC分类号： H01L21/02118 , H01L21/02288 , H01L21/312 , H01L23/293 , H01L23/3171 , H01L23/556 , H01L24/05 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05 , H01L2224/45015 , H01L2224/48463 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01033 , H01L2924/0105 , H01L2924/01057 , H01L2924/01061 , H01L2924/01075 , H01L2924/01082 , H01L2924/01092 , H01L2924/014 , H01L2924/14 , H01L2924/20752 , H01L2924/20753 , H01L2224/45099 , H01L2924/00
摘要： A semiconductor device having a protective polyimide film layer for preventing a-rays from intruding into the device is provided. The polyimide film layer has incorporated therein a salient amount offinely divided filler particles, and is formed on the surface of at least a region wherein the semiconductor element is formed. The polyimide film layer is formed by coating the semiconductor substrate with a liquid polyimide or polyamic acid composition having incorporated therein the finely divided filler particles, according to a screen printing method.

3. 发明公开

EP3241242A1 LASERDOTIERUNG VON HALBLEITER 审中-公开
标题翻译：半导体激光器
公开(公告)号：EP3241242A1
公开(公告)日：2017-11-08
申请号：EP15804316.6
申请日：2015-12-01
申请人： Merck Patent GmbH
发明人： DOLL, Oliver , KOEHLER, Ingo , BARTH, Sebastian
IPC分类号： H01L31/0224 , H01L21/225 , H01L31/18
CPC分类号： H01L31/1804 , H01L21/02282 , H01L21/02288 , H01L21/2256 , H01L21/268 , H01L31/022425 , H01L31/0288 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for producing structured high-efficiency solar cells and photovoltaic elements that have differently doped regions. The invention also relates to the solar cells that are produced by said method and have increased efficiency.

4. 发明公开

EP3073520A1 METHOD FOR MANUFACTURING ELECTRONIC COMPONENT, AND ELECTRONIC COMPONENT 有权
标题翻译： VERFAHREN ZUR HERSTELLUNG EINER ELEKTRONISCHEN KOMPONENTE UND ELEKTRONISCHE KOMPONENTE
公开(公告)号：EP3073520A1
公开(公告)日：2016-09-28
申请号：EP14863263.1
申请日：2014-11-18
申请人： Sekisui Chemical Co., Ltd.
发明人： TANIKAWA, Mitsuru , WATANABE, Takashi , UEDA, Michihisa , NAKAMURA, Shigeru , MAENAKA, Hiroshi , TAKAHASHI, Ryosuke , INOUE, Takanori , FUJITA, Yoshito
IPC分类号： H01L21/52 , C09J4/02 , C09J5/06 , H01L21/60
CPC分类号： H01L21/02288 , C08F220/10 , C09J4/00 , C09J5/00 , C09J2205/31 , H01L21/52 , H01L21/78 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/743 , H01L24/83 , H01L2224/27318 , H01L2224/29101 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/8385 , H01L2224/83862 , H01L2224/83874 , H01L2224/83885 , H01L2224/8592 , H01L2924/00014 , H01L2224/45099 , H01L2224/05599 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： Provided is a method for producing an electronic component, which is capable of forming a cured adhesive layer easily with high accuracy.
The method for producing a curable film electronic component according to the present invention includes an application step in which an adhesive is applied onto a first electronic component body using an ink jet device to form an adhesive layer, a first light irradiation step in which an adhesive layer is irradiated with light from a first light irradiation part, an attachment step in which a second electronic component body is disposed on the adhesive layer irradiated with light and attached, and a step in which the adhesive layer is cured by heating, thereby giving an electronic component, the ink jet device includes an ink tank to store the adhesive, a discharge part, and a circulation flow path part, and in the application step, the adhesive is applied while being circulated in the ink jet device.
摘要翻译：提供一种能够容易地以高精度形成固化的粘合剂层的电子部件的制造方法。根据本发明的可固化膜电子部件的制造方法包括使用喷墨装置将粘合剂施加到第一电子部件主体上以形成粘合剂层的涂布步骤，第一光照射步骤，其中粘合剂用第一光照射部分的光照射层，其中将第二电子部件主体设置在被照射光并附着的粘合剂层上的安装步骤，以及粘合剂层通过加热固化的步骤，从而得到电子部件，喷墨装置包括用于存储粘合剂的墨水罐，排出部分和循环流动路径部分，并且在施加步骤中，粘合剂在喷墨装置中循环的同时施加。

5. 发明公开

EP3037267A1 METHOD FOR THE SURFACE TREATMENT OF A SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译： VERFAHREN ZUROBERFLÄCHENBEHANDLUNGEINES HALBLEITERSUBSTRATS
公开(公告)号：EP3037267A1
公开(公告)日：2016-06-29
申请号：EP15200611.0
申请日：2015-12-16
申请人： STMicroelectronics S.r.l.
发明人： DI PALMA, Vincenza , PORRO, Fabrizio
IPC分类号： B41J2/14 , B41J2/16
CPC分类号： H01L21/02115 , B41J2/1433 , B41J2/1606 , B41J2/162 , B41J2/164 , H01L21/0206 , H01L21/02288 , H01L21/30604
摘要： The present invention relates to a method for application of an anti-wetting coating (13) to a substrate (4) of semiconductor material comprising the steps of: a) applying to a support (1) a solution of a hydrocarbon (3) comprising at least one unsaturated bond and, optionally, at least one hetero-atom for obtaining a layer of hydrocarbon (3); b) treating at least one surface (5) of a substrate (4) of semiconductor material with an acid; c) transferring the layer of hydrocarbon (3) from the support (1) to the surface (5) of the substrate (4) of semiconductor material; and d) chemically coupling the layer of hydrocarbon (3) to the surface (5) of a substrate (4) of semiconductor material.
It further regards an integrated ink-jet printhead provided with a nozzle plate obtained according to the method of the invention.
摘要翻译：本发明涉及一种将抗湿涂层（13）应用于半导体材料的衬底（4）的方法，包括以下步骤：a）向支撑体（1）涂覆一种烃（3）的溶液，该溶液包含至少一个不饱和键和任选的至少一个杂原子用于获得一层烃（3）; b）用酸处理半导体材料的衬底（4）的至少一个表面（5）; c）将烃层（3）从载体（1）转移到半导体材料的基板（4）的表面（5）; 和d）将烃层（3）化学耦合到半导体材料的衬底（4）的表面（5）上。它还涉及一种具有根据本发明方法获得的喷嘴板的集成喷墨打印头。

6. 发明公开

EP0275075A3 Thin film transistor and method of making the same 失效
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：EP0275075A3
公开(公告)日：1989-04-12
申请号：EP88100305.7
申请日：1988-01-12
申请人： HOSIDEN CORPORATION
发明人： Ukai, Yasuhiro c/o Hosiden Electronics Co.,Ltd.
IPC分类号： H01L29/78 , H01L29/62 , H01L21/312
CPC分类号： H01L21/02118 , H01L21/02282 , H01L21/02285 , H01L21/02288 , H01L21/312 , H01L29/4908 , H01L29/4966 , H01L29/51
摘要： A source electrode (12) and a drain electrode (13) are formed apart on an insulating substrate (11), and a semiconductor layer (14) is formed on the szbstrate (11) between the source and drain electrodes (12, 13). An insulating organic molecular film (21) is formed all over the source and drain electrodes (12, 13) and the semiconductor layer (14). Ions are implanted into a selected top surface region of the insulating oganic molecular film (21) corresponding to the semiconductor layer (14), by which chains of molecules in the surface region to form free carbon, providing a conductive gate electrode (22) and the remaining part of the insulating organic molecular film (21) forming a gate insulating film (23).
摘要翻译：在绝缘衬底（11）上分开形成源极（12）和漏极（13），并且在源极和漏极（12,13）之间的衬底（11）上形成半导体层（14）。在源极和漏极（12,13）和半导体层（14）的整个面上形成绝缘性的有机分子膜（21）。将离子注入到对应于半导体层（14）的绝缘有机分子膜（21）的选定顶表面区域中，通过该表面区域中的分子链形成自由碳，提供导电栅电极（22）和绝缘有机分子膜（21）的剩余部分形成栅极绝缘膜（23）。

7. 发明公开

EP2811525A1 Electrochemically-gated field-effect transistor, method for its manufacture, its use, and electronics comprising said field- effect transistor 审中-公开
标题翻译：电化学控制场效应晶体管，用于其制造方法，及其用途和该场效应晶体管的电子
公开(公告)号：EP2811525A1
公开(公告)日：2014-12-10
申请号：EP13401025.5
申请日：2013-03-14
申请人： Karlsruher Institut für Technologie
发明人： Dasgupta, Subho , Hahn, Horst
IPC分类号： H01L29/45 , H01L29/49 , H01L29/786 , H01L27/12
CPC分类号： H01L29/4908 , B82Y10/00 , H01L21/02288 , H01L27/1292 , H01L29/0665 , H01L29/41733 , H01L29/42384 , H01L29/45 , H01L29/66666 , H01L29/66742 , H01L29/66969 , H01L29/78642 , H01L29/78684 , H01L29/7869
摘要： The present invention relates to an electrochemically-gated field-effect transistor (FET) in which the channel length is independent from the printing resolution.
The FET comprises an arrangement (11) placed on top of a substrate (10) which consists of a first electrode (1), a second electrode (2) and a transistor channel (4), located between the two electrodes (1, 2), an electrolyte (5), covering the transistor channel (4) completely, and a gate electrode (3).
The first electrode (1), comprising a first solid or porous metallic conducting body, is placed on top of the substrate (10). The transistor channel (4), comprising a porous semiconducting material, is placed on top of the first electrode (1), partially covering the first electrode (1). The second electrode (2), comprising a second solid or porous metallic conducting body, is placed on top of the transistor channel (4) which is placed on top of the first electrode (1), at least partially covering the transistor channel (4). The electrolyte (5) penetrates at least through the transistor channel (4) down to the first electrode (1) while leaving a part of each electrode (1, 2) uncovered. The gate electrode (3), comprising a third solid or porous metallic conducting body, is placed in contact with the electrolyte (5) but without any contact to the arrangement (11).
摘要翻译：本发明涉及在电化学门控场效应晶体管（FET），其中信道长度是独立于打印分辨率。放置在基板的顶部（10），该besteht第一电极的布置的FET包括：（11）（1），第二电极（2）和一个晶体管沟道（4），位于两个电极（1,2之间）（在电解质（5），覆盖所述晶体管通道（4）完全呼叫，和栅电极3）。所述第一电极（1），包括第一固体或多孔金属导电体，被放置在基板（10）的顶部。包括多孔半导体材料的晶体管通道（4），被放置在所述第一电极的顶（1）部分地覆盖所述第一电极（1）。包括第二实心的或多孔的金属导电体的第二电极（2）中，对晶体管通道（4）的顶部上放置所有这些在第一电极（1）的顶部上放置至少部分地覆盖所述晶体管沟道（4 ）。电解质（5）至少通过向下到（1），同时留下各个电极的一部分（1,2）未覆盖所述第一电极的晶体管沟道（4）穿透。包括第三实心的或多孔的金属导电体的栅极电极（3），与所述电解质（5），但没有任何接触到装置（11）接触放置。

8. 发明公开

EP2376434A1 FUNKTIONELLES MATERIAL FÜR GEDRUCKTE ELEKTRONISCHE BAUTEILE 有权
标题翻译： FUNKTIONELLES材料FÜRGEDRUCKTE ELEKTRONISCHE BAUTEILE
公开(公告)号：EP2376434A1
公开(公告)日：2011-10-19
申请号：EP09799248.1
申请日：2009-12-10
申请人： Merck Patent GmbH
发明人： KUEGLER, Ralf , KLYSZCZ, Andreas , RENKER, Sabine , SCHNEIDER, Joerg J. , HOFFMANN, Rudolf
IPC分类号： C07C251/70 , C23C18/12 , H01L21/335 , H05K3/12 , H05K3/14
CPC分类号： H01L29/786 , C07C249/08 , C07F7/2204 , C23C18/1216 , C23C18/1279 , C23C18/1295 , C23C18/14 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02288 , H01L21/02348 , H01L21/28008 , H01L21/316 , H01L27/1225 , H01L27/1248 , H01L27/1292 , H01L29/45 , H01L29/4908 , H01L29/78603 , H01L29/7869 , H01L2924/0002 , C07C251/70 , H01L2924/00
摘要： The invention relates to a printable precursor made of a metal organic aluminum, gallium, neodymium, ruthenium, magnesium, hafnium, zirconium, indium, and/or tin complex and mixtures thereof comprising at least one ligand from the class of oximates, for electronic components, and to a production method. The invention further relates to a corresponding printed electronic component, preferably field effect transistors.
摘要翻译：本发明涉及一种可印刷前体，其包含有机金属铝，镓，钕，钌，镁，铪，锆，铟和/或锡络合物或其混合物，其含有至少一种来自锑酸盐类的配位体，，以及一个准备过程。本发明还涉及相应的印刷电子部件，优选场效应晶体管。

9. 发明公开

EP1952429A1 DIELECTRIC MEDIA INCLUDING SURFACE-TREATED METAL OXIDE PARTICLES 审中-公开
标题翻译：带表面处理的金属氧化物介电常数介质
公开(公告)号：EP1952429A1
公开(公告)日：2008-08-06
申请号：EP06837476.8
申请日：2006-11-14
申请人： 3M Innovative Properties Company
发明人： NAPIERALA, Mark,E.
IPC分类号： H01L21/31 , H01L27/108 , H01L21/8242 , H01L29/786
CPC分类号： H01L21/02126 , H01L21/02118 , H01L21/02288 , H01L21/312 , H01L21/316 , H01L51/0005 , H01L51/004 , H01L51/0537
摘要： Briefly, the present invention provides an electronic device, typically a transistor or a capacitor, comprising at least one electrically conductive electrode and, adjacent to the electrode, a dielectric layer; wherein the dielectric layer comprises a polymeric matrix and, dispersed in the polymeric matrix, metal oxide particles; wherein the metal oxide particles have organic functional groups covalently bound to their surface, and wherein the organic functional groups are not covalently bound to the polymeric matrix. In another aspect, the present invention provides a printable dispersion, typically a jet-printable dispersion, comprising: a) a curable composition and b) metal oxide particles; wherein the metal oxide particles have organic functional groups covalently bound to their surface, and wherein the organic functional groups are not covalently bound to any part of the curable composition. In one embodiment, the organic functional groups do not react with any part of the curable composition to form covalent bonds. In one embodiment, the organic functional groups may react with the curable composition to form covalent bonds upon curing of the curable composition.

10. 发明公开

EP1837914A2 Dielectric, display equipped with dielectric, and method for manufacturing said dielectric 审中-公开
标题翻译：具有用于电介质该电介质和制造过程中的介电显示装置
公开(公告)号：EP1837914A2
公开(公告)日：2007-09-26
申请号：EP07251216.3
申请日：2007-03-22
申请人： E.I. du Pont de Nemours and Company
发明人： Keiichiro Hayakawa , Masakatsu Kuroki
IPC分类号： H01L27/32
CPC分类号： H01L21/022 , C03C3/066 , G03F7/0007 , G03F7/0047 , H01J9/241 , H01J2209/26 , H01J2211/38 , H01L21/02142 , H01L21/02288 , H01L21/312 , H01L21/3121
摘要： The present invention provides a dielectric used in a display device. The dielectric has a lower dielectric layer composed of a photosensitive composition and an upper dielectric layer, composed of a photosensitive composition formed on the above-mentioned lower dielectric layer, are included, with the transmittance of the above-mentioned upper dielectric layer to light used in a certain pattern exposure being lower than the transmittance of the above-mentioned lower dielectric layer to the light used in said pattern exposure.
摘要翻译：本发明提供一种在显示装置中使用的电介质。该电介质具有光敏组合物，并在上部电介质层构成的下部电介质层，形成在上述下部电介质层上形成光敏组合物组成的，都包括在内，与上述上部电介质层中使用的透射光在某图案曝光比上述下部电介质层，以在所述图案曝光中使用的光的透射率更低。

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