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1. 发明授权

US5650650A High speed semiconductor device with a metallic substrate 失效
标题翻译：具有金属基底的高速半导体器件
公开(公告)号：US5650650A
公开(公告)日：1997-07-22
申请号：US454324
申请日：1995-08-10
申请人： Tadahiro Ohmi , Hisayuki Shimada , Masaki Hirayama
发明人： Tadahiro Ohmi , Hisayuki Shimada , Masaki Hirayama
IPC分类号： H01L29/78 , H01L21/28 , H01L21/316 , H01L21/336 , H01L23/14 , H01L27/06 , H01L27/092 , H01L27/12 , H01L29/49 , H01L29/51 , H01L29/786 , H01L27/01
CPC分类号： H01L29/513 , H01L21/28229 , H01L21/316 , H01L23/142 , H01L27/0688 , H01L27/092 , H01L27/1203 , H01L29/4908 , H01L29/517 , H01L29/66772 , H01L29/78618 , H01L29/78639 , H01L2924/0002 , H01L2924/13091
摘要： The semiconductor device has a large capacity of power driving, and can operate at a high speed. A first semiconductor region of a first conductivity type is formed on a metal substrate through a first insulating film. In the first semiconductor region, first source and drain regions of a second conductivity type are formed. Further, on the region which isolates the first source and drain regions, a first metallic gate electrode is formed through a second insulating film.
摘要翻译： PCT No.PCT / JP93 / 01850 Sec。 371日期：1995年8月10日 102（e）日期1995年8月10日PCT 1993年12月21日PCT PCT。公开号WO94 / 15366 日期1994年7月7日半导体器件具有大容量的电力驱动，可以高速运行。通过第一绝缘膜在金属基板上形成第一导电类型的第一半导体区域。在第一半导体区域中，形成第二导电类型的第一源区和漏区。此外，在隔离第一源区和漏区的区域上，通过第二绝缘膜形成第一金属栅电极。

2. 发明申请

US20050206018A1 Oxide film forming method 审中-公开
标题翻译：氧化膜成型方法
公开(公告)号：US20050206018A1
公开(公告)日：2005-09-22
申请号：US11129710
申请日：2005-05-13
申请人： Tadahiro Ohmi , Takashi Imaoka , Hisayuki Shimada , Nobuhiro Konishi , Mizuho Morita , Takeo Yamashita , Tadashi Shibata , Hidetoshi Wakamatsu , Jinzo Watanabe , Shintaro Aoyama , Masakazu Nakamura
发明人： Tadahiro Ohmi , Takashi Imaoka , Hisayuki Shimada , Nobuhiro Konishi , Mizuho Morita , Takeo Yamashita , Tadashi Shibata , Hidetoshi Wakamatsu , Jinzo Watanabe , Shintaro Aoyama , Masakazu Nakamura
IPC分类号： B01J19/08 , C23C8/10 , C23C8/36 , C23C14/02 , C23C14/48 , C23C16/02 , C23C16/44 , C30B23/02 , C30B25/02 , G01N23/00 , H01L21/66
CPC分类号： C30B23/02 , C23C8/10 , C23C8/36 , C23C14/022 , C23C14/48 , C23C16/02 , C23C16/4401 , C30B25/02 , C30B29/16 , Y10S438/903
摘要： Vacuum processing equipment capable of preventing particles from sticking to objects to be processed in vacuum vessels. The vacuum equipment comprises a series of vacuum vessels separated by doors, and the pressure in the vessels are reducible respectively. The vessels are so configured that objects to be processed are moveable among them and there is provided light projection means for projecting ultra rays on gases introduced to at least of the vessels.
摘要翻译：真空处理设备能够防止颗粒粘附在真空容器中被处理物体。真空设备包括一系列由门隔开的真空容器，容器中的压力分别可减少。容器被配置成使待处理的物体在它们之间是可移动的，并且设置有用于将超光线投射到至少导入到容器中的气体的光投射装置。

3. 发明授权

US6007970A Lithographic developer containing surfactant 失效
标题翻译：含有表面活性剂的平版印刷版
公开(公告)号：US6007970A
公开(公告)日：1999-12-28
申请号：US395182
申请日：1995-02-27
申请人： Tadahiro Ohmi , Hisayuki Shimada , Shigeki Shimomura
发明人： Tadahiro Ohmi , Hisayuki Shimada , Shigeki Shimomura
IPC分类号： G03F7/32 , G03C5/00
CPC分类号： G03F7/322
摘要： Provided is a lithographic developer used to develop a resist pattern having regions with different sizes and shapes, by dissolving and removing a resist region of a resist layer formed in the resist pattern, wherein the developer comprises a surfactant capable of increasing the dissolution of a resist in the resist region to be dissolved and removed, having a smaller dissolving-and-removing area on the surface of the resist layer.
摘要翻译：提供了通过溶解和除去形成在抗蚀剂图案中的抗蚀剂层的抗蚀剂区域来开发具有不同尺寸和形状的区域的抗蚀剂图案的平版印刷显影剂，其中显影剂包括能够增加抗蚀剂溶解度的表面活性剂在要溶解和去除的抗蚀剂区域中，在抗蚀剂层的表面上具有较小的溶解和去除区域。

4. 发明授权

US06949478B2 Oxide film forming method 失效
标题翻译：氧化膜成型方法
公开(公告)号：US06949478B2
公开(公告)日：2005-09-27
申请号：US10120628
申请日：2002-04-11
申请人： Tadahiro Ohmi , Takashi Imaoka , Hisayuki Shimada , Nobuhiro Konishi , Mizuho Morita , Takeo Yamashita , Tadashi Shibata , Hidetoshi Wakamatsu , Jinzo Watanabe , Shintaro Aoyama , Masakazu Nakamura
发明人： Tadahiro Ohmi , Takashi Imaoka , Hisayuki Shimada , Nobuhiro Konishi , Mizuho Morita , Takeo Yamashita , Tadashi Shibata , Hidetoshi Wakamatsu , Jinzo Watanabe , Shintaro Aoyama , Masakazu Nakamura
IPC分类号： B01J19/08 , C23C8/10 , C23C8/36 , C23C14/02 , C23C14/48 , C23C16/02 , C23C16/44 , C30B23/02 , C30B25/02 , G01N23/00 , H01L21/66 , H01L21/31
CPC分类号： C30B23/02 , C23C8/10 , C23C8/36 , C23C14/022 , C23C14/48 , C23C16/02 , C23C16/4401 , C30B25/02 , C30B29/16 , Y10S438/903
摘要： A method of forming an oxide film having high insularity capability is performed within an ultra clean environment, using charged particles.
摘要翻译：使用带电粒子在超清洁环境下进行形成具有高绝缘性的氧化膜的方法。

5. 发明授权

US6107007A Lithography process 失效
标题翻译：平版印刷工艺
公开(公告)号：US6107007A
公开(公告)日：2000-08-22
申请号：US15437
申请日：1993-02-09
申请人： Tadahiro Ohmi , Hisayuki Shimada , Shigeki Shimomura , Akiyoshi Suzuki , Mamoru Miyawaki , Miyoko Noguchi
发明人： Tadahiro Ohmi , Hisayuki Shimada , Shigeki Shimomura , Akiyoshi Suzuki , Mamoru Miyawaki , Miyoko Noguchi
IPC分类号： G03F7/20 , G03F7/32 , G03C5/00
CPC分类号： G03F7/701 , G03F7/322
摘要： A lithography process for forming a pattern having different sizes or different shapes of pattern components, comprises steps of exposing a resist to a predetermined light pattern by modified illumination, and removing, at least one step of forming the resist pattern, a region of the resist by employing a lithography-developing solution containing a surfactant, the surfactant being capable of promoting dissolution of a smaller pattern component to be removed of the resist.The surfactant is represented by the general formula below:HO(CH.sub.2 CH.sub.2 O).sub.a (CH(CH.sub.3)CH.sub.2 O).sub.b (CH.sub.2 CH.sub.2 O).sub.c Hwhere a, b, and c are respectively an integer.The surfactant satisfies the relation:(A+C)/(A+B+C).ltoreq.0.3where A represents the molecular weight of HO(CH.sub.2 CH.sub.2 O).sub.a, B represents the molecular weight of (CH(CH.sub.3)CH.sub.2 O).sub.b, and C represents the molecular weight of (CH.sub.2 CH.sub.2 O).sub.c H.
摘要翻译：用于形成具有不同尺寸或不同形状的图案部件的图案的光刻工艺包括以下步骤：通过改进的照明将抗蚀剂暴露于预定的光图案，以及去除形成抗蚀剂图案的至少一个步骤，通过使用含有表面活性剂的光刻显影液，表面活性剂能够促进较小的图案成分的溶解，以除去抗蚀剂。表面活性剂由以下通式表示：HO（CH 2 CH 2 O）a（CH（CH 3）CH 2 O）b（CH 2 CH 2 O）c H其中a，b和c分别为整数。表面活性剂满足下列关系：（A + C）/（A + B + C）≤0.3其中A表示HO（CH 2 CH 2 O）a的分子量，B表示（CH（CH 3）CH 2 O）b的分子量，C表示（CH 2 CH 2 O）c H的分子量。

6. 发明授权

US6146135A Oxide film forming method 失效
公开(公告)号：US6146135A
公开(公告)日：2000-11-14
申请号：US680519
申请日：1996-07-09
申请人： Jinzo Watanabe , Takeo Yamashita , Masakazu Nakamura , Shintaro Aoyama , Hidetoshi Wakamatsu , Tadashi Shibata , Tadahiro Ohmi , Nobuhiro Konishi , Mizuho Morita , Hisayuki Shimada , Takashi Imaoka
发明人： Jinzo Watanabe , Takeo Yamashita , Masakazu Nakamura , Shintaro Aoyama , Hidetoshi Wakamatsu , Tadashi Shibata , Tadahiro Ohmi , Nobuhiro Konishi , Mizuho Morita , Hisayuki Shimada , Takashi Imaoka
IPC分类号： B01J19/08 , C23C8/10 , C23C8/36 , C23C14/02 , C23C14/48 , C23C16/02 , C23C16/44 , C30B23/02 , C30B25/02 , G01N23/00 , H01L21/66 , F26B21/00 , F26B3/00 , F26B19/00
CPC分类号： C30B23/02 , C23C14/022 , C23C14/48 , C23C16/02 , C23C16/4401 , C23C8/10 , C23C8/36 , C30B25/02 , C30B29/16 , Y10S438/903
摘要： Vacuum processing equipment capable of preventing particles from sticking to objects to be processed in vacuum vessels. The vacuum equipment comprises a series of vacuum vessels separated by doors, and the pressure in the vessels are reducible respectively. The vessels are so configured that objects to be processed are movable among them, and there is provided light projection means for projecting ultra rays on gases introduced to at least of the vessels.

7. 发明授权

US09105450B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US09105450B2
公开(公告)日：2015-08-11
申请号：US13145398
申请日：2009-11-02
申请人： Masaki Hirayama , Tadahiro Ohmi
发明人： Masaki Hirayama , Tadahiro Ohmi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32192 , H01J37/32229 , H01J37/32238 , H05H1/46 , H05H2001/4622
摘要： A microwave plasma processing apparatus includes: a processing container wherein a gas is excited by microwaves and a substrate is plasma-processed; a microwave source which outputs microwaves; a transmission line through which the microwaves output from the microwave source are transmitted; a plurality of dielectric plates which are arranged on an inner surface of the processing container and emit the microwaves into the processing container; a plurality of first coaxial waveguides which are adjacent to the dielectric plates and through which the microwaves are transmitted to the dielectric plates; and a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the first coaxial waveguides. The coaxial waveguide distributor includes a second coaxial waveguide which has an input portion and 2 types of branched structures which are connected to the first coaxial waveguides and have different configurations.
摘要翻译：微波等离子体处理装置包括：处理容器，其中气体被微波激发，基板被等离子体处理; 输出微波的微波源; 传输微波从微波源输出的微波的传输线; 多个电介质板，其布置在处理容器的内表面上，并将微波放射到处理容器中; 多个第一同轴波导，与所述电介质板相邻并且所述微波通过所述多个第一同轴波导传输到所述电介质板; 以及将通过传输线传输的微波分配并传输到第一同轴波导的同轴波导分配器。同轴波导分配器包括第二同轴波导，其具有连接到第一同轴波导并具有不同配置的输入部分和两种类型的分支结构。

8. 发明授权

US08114245B2 Plasma etching device 失效
标题翻译：等离子体蚀刻装置
公开(公告)号：US08114245B2
公开(公告)日：2012-02-14
申请号：US10304869
申请日：2002-11-26
申请人： Tadahiro Ohmi , Masaki Hirayama , Haruyuki Takano , Yusuke Hirayama
发明人： Tadahiro Ohmi , Masaki Hirayama , Haruyuki Takano , Yusuke Hirayama
IPC分类号： C23F1/00 , H01L21/306 , C23C16/509 , C23C16/52 , C23C16/505 , C23C16/22 , C23C16/06
CPC分类号： H01J37/32623 , H01J37/32082 , H01J37/3266
摘要： A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a magnetic field applying means. The plasma etching device has magnetic field applying means which has two parallel plate electrodes I and II and RF power applying means, with the base set on the electrode I, and which is horizontal and unidirectional with respect to the surface of the base where plasma etching is carried out. In this plasma etching device, an auxiliary electrode is provided at least on the upstream side of the base in a flow of electron current generated by the magnetic field applying means. The auxiliary electrode includes a local electrode arranged on the side facing the electrode II and means for adjusting impedance provided at a part of the local electrode to be electrically connected with the electrode I.
摘要翻译：一种等离子体蚀刻装置，其具有能够实现基底表面上产生的等离子体的均匀等离子体密度的辅助电极，并且能够相对于基座进行均匀蚀刻而不依赖于压力而不旋转磁场施加装置。等离子体蚀刻装置具有磁场施加装置，其具有两个平行板电极I和II以及RF功率施加装置，其基极设置在电极I上，并且相对于基板的表面是水平和单向的，其中等离子体蚀刻完成了。在该等离子体蚀刻装置中，在由磁场施加装置产生的电流的流动中，至少在基座的上游侧设置有辅助电极。辅助电极包括布置在面向电极II的一侧的局部电极和用于调节局部电极的一部分以与电极I电连接的阻抗的装置。

9. 发明申请

US20100183827A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20100183827A1
公开(公告)日：2010-07-22
申请号：US12663764
申请日：2008-06-11
申请人： Masaki Hirayama , Tadahiro Ohmi , Takahiro Horiguchi
发明人： Masaki Hirayama , Tadahiro Ohmi , Takahiro Horiguchi
IPC分类号： H05H1/46 , C23C16/511
CPC分类号： C23C16/511 , B05C13/00 , H01J37/32192 , H01J37/32266 , H05H1/46
摘要： A plasma processing apparatus capable of reducing the use amount of a dielectric member is provided. The plasma processing apparatus 1 includes a metal processing chamber 4 configured to accommodate therein a substrate G to be plasma-processed; an electromagnetic wave source 34 that supplies an electromagnetic wave necessary to excite plasma in the processing chamber 4; one or more dielectric members 25 provided on a bottom surface of a cover 3 of the processing chamber 4 and configured to transmit the electromagnetic wave supplied from the electromagnetic wave source 34 into the inside of the processing chamber 4, a portion of each dielectric member 25 being exposed to the inside of the processing chamber 4; and a surface wave propagating section 51 installed adjacent to the dielectric member 25 and configured to propagate the electromagnetic wave along a metal surface exposed to the inside of the processing chamber 4.
摘要翻译：提供能够减少电介质部件的使用量的等离子体处理装置。等离子体处理装置1包括金属处理室4，其配置为在其中容纳待等离子体处理的基板G; 提供在处理室4中激发等离子体所需的电磁波的电磁波源34; 设置在处理室4的盖3的底面上的一个或多个电介质构件25，用于将从电磁波源34提供的电磁波传送到处理室4的内部，每个电介质构件25的一部分暴露于处理室4的内部; 以及表面波传播部分51，其安装在电介质部件25附近，并被构造成沿着暴露于处理室4的内部的金属表面传播电磁波。

10. 发明申请

US20070221623A1 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体加工设备和方法
公开(公告)号：US20070221623A1
公开(公告)日：2007-09-27
申请号：US11689180
申请日：2007-03-21
申请人： Takahiro HORIGUCHI , Masaki Hirayama , Tadahiro Ohmi
发明人： Takahiro HORIGUCHI , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： B44C1/22 , C23C16/00 , C23F1/00 , H05H1/24
CPC分类号： H01J37/32568 , C23C16/45572 , C23C16/45574 , C23C16/511 , H01J37/32192 , H01J37/32211
摘要： There is provided a plasma processing apparatus in which a microwave is propagated into a dielectric body disposed at a top surface of a process chamber through a plurality of slots formed in a bottom face of a rectangular waveguide to excite a predetermined gas supplied into the process chamber into plasma by electric field energy of an electromagnetic field formed on a surface of the dielectric body, to thereby generate plasma with which a substrate is processed, wherein a top face member of the rectangular waveguide is formed of a conductive, nonmagnetic material and is disposed so as to be movable up and down relative to the bottom face of the rectangular waveguide. To change a wavelength in the rectangular waveguide, the top face member of the rectangular waveguide is moved up and down relative to the bottom face of the rectangular waveguide according to conditions of the plasma processing performed in the process chamber, such as gas species, pressure, and a power of the microwave of a microwave supplier.
摘要翻译：提供了一种等离子体处理装置，其中微波通过形成在矩形波导的底面中的多个槽传播到设置在处理室的顶表面处的电介质体中，以激发供应到处理室中的预定气体通过形成在电介质体的表面上的电磁场的电场能进入等离子体，从而产生用于处理基板的等离子体，其中矩形波导的顶面部件由导电非磁性材料形成，以相对于矩形波导的底面上下移动。为了改变矩形波导中的波长，根据处理室中进行的等离子体处理（例如气体种类，压力）的条件，矩形波导的顶面构件相对于矩形波导的底面上下移动，微波炉微波炉的功率。

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