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    • 1. 发明授权
    • Exposure apparatus and device manufacturing method
    • 曝光装置和装置制造方法
    • US07573563B2
    • 2009-08-11
    • US11366356
    • 2006-03-01
    • Kenji YamazoeSeiji TakeuchiAkiyoshi Suzuki
    • Kenji YamazoeSeiji TakeuchiAkiyoshi Suzuki
    • G03B27/72G03B27/42G03B27/54
    • G03F7/7085G01J4/04G03F7/70058G03F7/70566G03F7/70591
    • An exposure apparatus includes an illumination optical system for illuminating the reticle using the ultraviolet light from the light source, and a polarization measuring unit measuring the polarization state of the ultraviolet light, the polarization measuring unit including an optical unit for providing at least three different phase differences to the ultraviolet light that has passed at least part of the illumination optical system, a polarization element for providing a different transmittance in accordance with a polarization state of the ultraviolet light that has passed the optical unit, and an image pickup device for detecting a light intensity of the ultraviolet light that has passed the polarization element, the polarization measuring unit measuring the polarization state of the ultraviolet light that has passed the at least part of the illumination optical system based on a detection result of the image pickup device.
    • 曝光装置包括:照明光学系统,其使用来自光源的紫外光照射标线片;以及偏振光测量单元,测量紫外光的偏振状态,所述偏振光测量单元包括用于提供至少三个不同相位的光学单元 与通过照明光学系统的至少一部分的紫外线的差异,根据通过光学单元的紫外线的偏振状态提供不同透射率的偏振元件,以及用于检测 通过偏振元件的紫外线的光强度,所述偏振光测定单元,根据所述摄像元件的检测结果,测量已经通过所述照明光学系统的至少一部分的紫外线的偏振状态。
    • 5. 发明授权
    • Multiple exposure device formation
    • 多曝光装置形成
    • US06534242B2
    • 2003-03-18
    • US09783600
    • 2001-02-15
    • Mitsuro SugitaAkiyoshi SuzukiMiyoko KawashimaKenji SaitohYuichi Iwasaki
    • Mitsuro SugitaAkiyoshi SuzukiMiyoko KawashimaKenji SaitohYuichi Iwasaki
    • G03C500
    • G03F7/2022G03F7/7045G03F7/70466
    • An exposure method for transferring a device pattern to a resist, wherein the device pattern includes a first element and a second element having a linewidth narrower than the first element. The method includes a first exposure step for exposing the resist by use of an interference fringe, produced by interference of two light beams, through an exposure amount substantially not greater than a threshold of the resist, and a second exposure step for exposing the resist with a light pattern related to the first and second elements. A light component, of the light pattern, related to the first element bears an exposure amount greater than the threshold, a light component, of the light pattern, related to the second element bears an exposure amount not greater than the threshold and is to be combined with light in a portion of the interference fringe, and a sum of the exposure amount of the light component related to the second element and an exposure amount provided by the light in the portion of the interference fringe is greater than the threshold.
    • 一种用于将器件图案转印到抗蚀剂的曝光方法,其中所述器件图案包括第一元件和具有比所述第一元件窄的线宽的第二元件。 该方法包括第一曝光步骤,用于通过使用由两个光束的干涉产生的干涉条纹曝光抗蚀剂,所述干涉条纹通过基本上不大于抗蚀剂阈值的曝光量,以及第二曝光步骤,用于将抗蚀剂与 与第一和第二元素相关的光图案。 与第一元件相关的光图案的光分量具有大于阈值的曝光量,与第二元件相关的光图案的光分量具有不大于阈值的曝光量,并且为 与干涉条纹的一部分中的光结合,并且与第二元素相关的光分量的曝光量与干涉条纹部分中的光提供的曝光量之和大于阈值。
    • 9. 发明授权
    • Optical scanning apparatus, surface-state inspection apparatus and
exposure apparatus
    • 光学扫描装置,表面状态检查装置和曝光装置
    • US5359407A
    • 1994-10-25
    • US177189
    • 1994-01-03
    • Akiyoshi SuzukiMichio Kohno
    • Akiyoshi SuzukiMichio Kohno
    • G01B11/30G01N21/88G01N21/94G01N21/956G02B26/12G03F1/84G03F7/20H01L21/66
    • G01N21/8806G02B26/123G03F7/70483G01N2201/0636
    • An optical system is arranged so that a scanning light beam for scanning a first region to be inspected and a scanning light beam for scanning a second region to be inspected are not simultaneously incident upon an object to be inspected. This prevents an adverse influence on the inspection caused by flare light generated when one scanning light beam is incident upon an edge of the object and is received by a light-receiving optical system for the region to be inspected scanned by another scanning light beam. The system includes two polygon mirrors provided as one body in an optical system at a position for projecting the light beams so that the distance between a focus point of the light beam projected on the lower surface of the object and a focus point of the light beam projected on the upper surface of the object in the beam scanning direction is greater than the width of the object in the beam scanning direction. As a result, the two light beams are alternately incident upon the object.
    • 光学系统被布置成使得用于扫描待检查的第一区域的扫描光束和用于扫描待检查的第二区域的扫描光束不会同时入射到待检查对象上。 这防止了当一个扫描光束入射到物体的边缘上并且被受光光学系统接收的由另一个扫描光束进行检查的区域的光束所产生的火炬光引起的检查的不利影响。 该系统包括在用于投射光束的位置处的光学系统中作为一体设置的两个多面镜,使得投射在物体的下表面上的光束的焦点与光束的焦点之间的距离 投影在物体的上表面上的光束扫描方向大于物体在光束扫描方向上的宽度。 结果,两个光束交替地入射到物体上。
    • 10. 发明授权
    • Method of positioning a wafer with respect to a focal plane of an
optical system
    • 相对于光学系统的焦平面定位晶片的方法
    • US5268744A
    • 1993-12-07
    • US680547
    • 1991-04-04
    • Tetsuya MoriAkiyoshi Suzuki
    • Tetsuya MoriAkiyoshi Suzuki
    • G01C3/06G03F9/00H01L21/027H01L21/30G01B11/00
    • G03F9/7023
    • A method of positioning a surface of a wafer with respect to a focal plane of an optical system is disclosed. The method includes: forming an image of a pattern in a first region of a wafer through the optical system; projecting through the optical system a radiation beam to the first region of the wafer and projecting through the optical system a reflection beam from the first region of the wafer onto a predetermined plane; evaluating the formed image to determine the focal plane of the optical system and determining, as a reference position, a position of incidence on the predetermined plane of the reflection beam from the first region of the wafer at a level corresponding to the determined focal plane; projecting a radiation beam to a second region of the wafer and projecting through the optical system a reflection beam from the second region of the wafer onto the predetermined plane; and positioning the second region of the wafer on the determined focal plane of the optical system on the basis of a position of incidence of the reflection beam from the second region of the wafer with respect to the determined reference position.
    • 公开了一种相对于光学系统的焦平面来定位晶片表面的方法。 该方法包括:通过光学系统在晶片的第一区域中形成图案的图像; 通过光学系统将辐射束投射到晶片的第一区域并通过光学系统突出从晶片的第一区域到预定平面的反射光束; 评估所形成的图像以确定所述光学系统的焦平面,并且以与所确定的焦平面相对应的水平确定来自所述晶片的所述第一区域的所述反射光束的预定平面上的入射位置作为参考位置; 将辐射束投影到所述晶片的第二区域并且通过所述光学系统突出从所述晶片的所述第二区域到所述预定平面的反射光束; 并且基于来自晶片的第二区域的反射光束相对于所确定的参考位置的入射位置,将晶片的第二区域定位在光学系统的确定的焦平面上。