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    • 6. 发明授权
    • Lithography process
    • 平版印刷工艺
    • US6107007A
    • 2000-08-22
    • US15437
    • 1993-02-09
    • Tadahiro OhmiHisayuki ShimadaShigeki ShimomuraAkiyoshi SuzukiMamoru MiyawakiMiyoko Noguchi
    • Tadahiro OhmiHisayuki ShimadaShigeki ShimomuraAkiyoshi SuzukiMamoru MiyawakiMiyoko Noguchi
    • G03F7/20G03F7/32G03C5/00
    • G03F7/701G03F7/322
    • A lithography process for forming a pattern having different sizes or different shapes of pattern components, comprises steps of exposing a resist to a predetermined light pattern by modified illumination, and removing, at least one step of forming the resist pattern, a region of the resist by employing a lithography-developing solution containing a surfactant, the surfactant being capable of promoting dissolution of a smaller pattern component to be removed of the resist.The surfactant is represented by the general formula below:HO(CH.sub.2 CH.sub.2 O).sub.a (CH(CH.sub.3)CH.sub.2 O).sub.b (CH.sub.2 CH.sub.2 O).sub.c Hwhere a, b, and c are respectively an integer.The surfactant satisfies the relation:(A+C)/(A+B+C).ltoreq.0.3where A represents the molecular weight of HO(CH.sub.2 CH.sub.2 O).sub.a, B represents the molecular weight of (CH(CH.sub.3)CH.sub.2 O).sub.b, and C represents the molecular weight of (CH.sub.2 CH.sub.2 O).sub.c H.
    • 用于形成具有不同尺寸或不同形状的图案部件的图案的光刻工艺包括以下步骤:通过改进的照明将抗蚀剂暴露于预定的光图案,以及去除形成抗蚀剂图案的至少一个步骤, 通过使用含有表面活性剂的光刻显影液,表面活性剂能够促进较小的图案成分的溶解,以除去抗蚀剂。 表面活性剂由以下通式表示:HO(CH 2 CH 2 O)a(CH(CH 3)CH 2 O)b(CH 2 CH 2 O)c H其中a,b和c分别为整数。 表面活性剂满足下列关系:(A + C)/(A + B + C)≤0.3其中A表示HO(CH 2 CH 2 O)a的分子量,B表示(CH(CH 3)CH 2 O)b的分子量 ,C表示(CH 2 CH 2 O)c H的分子量。