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1. 发明授权

US5650650A High speed semiconductor device with a metallic substrate 失效
标题翻译：具有金属基底的高速半导体器件
公开(公告)号：US5650650A
公开(公告)日：1997-07-22
申请号：US454324
申请日：1995-08-10
申请人： Tadahiro Ohmi , Hisayuki Shimada , Masaki Hirayama
发明人： Tadahiro Ohmi , Hisayuki Shimada , Masaki Hirayama
IPC分类号： H01L29/78 , H01L21/28 , H01L21/316 , H01L21/336 , H01L23/14 , H01L27/06 , H01L27/092 , H01L27/12 , H01L29/49 , H01L29/51 , H01L29/786 , H01L27/01
CPC分类号： H01L29/513 , H01L21/28229 , H01L21/316 , H01L23/142 , H01L27/0688 , H01L27/092 , H01L27/1203 , H01L29/4908 , H01L29/517 , H01L29/66772 , H01L29/78618 , H01L29/78639 , H01L2924/0002 , H01L2924/13091
摘要： The semiconductor device has a large capacity of power driving, and can operate at a high speed. A first semiconductor region of a first conductivity type is formed on a metal substrate through a first insulating film. In the first semiconductor region, first source and drain regions of a second conductivity type are formed. Further, on the region which isolates the first source and drain regions, a first metallic gate electrode is formed through a second insulating film.
摘要翻译： PCT No.PCT / JP93 / 01850 Sec。 371日期：1995年8月10日 102（e）日期1995年8月10日PCT 1993年12月21日PCT PCT。公开号WO94 / 15366 日期1994年7月7日半导体器件具有大容量的电力驱动，可以高速运行。通过第一绝缘膜在金属基板上形成第一导电类型的第一半导体区域。在第一半导体区域中，形成第二导电类型的第一源区和漏区。此外，在隔离第一源区和漏区的区域上，通过第二绝缘膜形成第一金属栅电极。

2. 发明授权

US6146135A Oxide film forming method 失效
公开(公告)号：US6146135A
公开(公告)日：2000-11-14
申请号：US680519
申请日：1996-07-09
申请人： Jinzo Watanabe , Takeo Yamashita , Masakazu Nakamura , Shintaro Aoyama , Hidetoshi Wakamatsu , Tadashi Shibata , Tadahiro Ohmi , Nobuhiro Konishi , Mizuho Morita , Hisayuki Shimada , Takashi Imaoka
发明人： Jinzo Watanabe , Takeo Yamashita , Masakazu Nakamura , Shintaro Aoyama , Hidetoshi Wakamatsu , Tadashi Shibata , Tadahiro Ohmi , Nobuhiro Konishi , Mizuho Morita , Hisayuki Shimada , Takashi Imaoka
IPC分类号： B01J19/08 , C23C8/10 , C23C8/36 , C23C14/02 , C23C14/48 , C23C16/02 , C23C16/44 , C30B23/02 , C30B25/02 , G01N23/00 , H01L21/66 , F26B21/00 , F26B3/00 , F26B19/00
CPC分类号： C30B23/02 , C23C14/022 , C23C14/48 , C23C16/02 , C23C16/4401 , C23C8/10 , C23C8/36 , C30B25/02 , C30B29/16 , Y10S438/903
摘要： Vacuum processing equipment capable of preventing particles from sticking to objects to be processed in vacuum vessels. The vacuum equipment comprises a series of vacuum vessels separated by doors, and the pressure in the vessels are reducible respectively. The vessels are so configured that objects to be processed are movable among them, and there is provided light projection means for projecting ultra rays on gases introduced to at least of the vessels.

3. 发明申请

US20050206018A1 Oxide film forming method 审中-公开
标题翻译：氧化膜成型方法
公开(公告)号：US20050206018A1
公开(公告)日：2005-09-22
申请号：US11129710
申请日：2005-05-13
申请人： Tadahiro Ohmi , Takashi Imaoka , Hisayuki Shimada , Nobuhiro Konishi , Mizuho Morita , Takeo Yamashita , Tadashi Shibata , Hidetoshi Wakamatsu , Jinzo Watanabe , Shintaro Aoyama , Masakazu Nakamura
发明人： Tadahiro Ohmi , Takashi Imaoka , Hisayuki Shimada , Nobuhiro Konishi , Mizuho Morita , Takeo Yamashita , Tadashi Shibata , Hidetoshi Wakamatsu , Jinzo Watanabe , Shintaro Aoyama , Masakazu Nakamura
IPC分类号： B01J19/08 , C23C8/10 , C23C8/36 , C23C14/02 , C23C14/48 , C23C16/02 , C23C16/44 , C30B23/02 , C30B25/02 , G01N23/00 , H01L21/66
CPC分类号： C30B23/02 , C23C8/10 , C23C8/36 , C23C14/022 , C23C14/48 , C23C16/02 , C23C16/4401 , C30B25/02 , C30B29/16 , Y10S438/903
摘要： Vacuum processing equipment capable of preventing particles from sticking to objects to be processed in vacuum vessels. The vacuum equipment comprises a series of vacuum vessels separated by doors, and the pressure in the vessels are reducible respectively. The vessels are so configured that objects to be processed are moveable among them and there is provided light projection means for projecting ultra rays on gases introduced to at least of the vessels.
摘要翻译：真空处理设备能够防止颗粒粘附在真空容器中被处理物体。真空设备包括一系列由门隔开的真空容器，容器中的压力分别可减少。容器被配置成使待处理的物体在它们之间是可移动的，并且设置有用于将超光线投射到至少导入到容器中的气体的光投射装置。

4. 发明授权

US6007970A Lithographic developer containing surfactant 失效
标题翻译：含有表面活性剂的平版印刷版
公开(公告)号：US6007970A
公开(公告)日：1999-12-28
申请号：US395182
申请日：1995-02-27
申请人： Tadahiro Ohmi , Hisayuki Shimada , Shigeki Shimomura
发明人： Tadahiro Ohmi , Hisayuki Shimada , Shigeki Shimomura
IPC分类号： G03F7/32 , G03C5/00
CPC分类号： G03F7/322
摘要： Provided is a lithographic developer used to develop a resist pattern having regions with different sizes and shapes, by dissolving and removing a resist region of a resist layer formed in the resist pattern, wherein the developer comprises a surfactant capable of increasing the dissolution of a resist in the resist region to be dissolved and removed, having a smaller dissolving-and-removing area on the surface of the resist layer.
摘要翻译：提供了通过溶解和除去形成在抗蚀剂图案中的抗蚀剂层的抗蚀剂区域来开发具有不同尺寸和形状的区域的抗蚀剂图案的平版印刷显影剂，其中显影剂包括能够增加抗蚀剂溶解度的表面活性剂在要溶解和去除的抗蚀剂区域中，在抗蚀剂层的表面上具有较小的溶解和去除区域。

5. 发明授权

US06949478B2 Oxide film forming method 失效
标题翻译：氧化膜成型方法
公开(公告)号：US06949478B2
公开(公告)日：2005-09-27
申请号：US10120628
申请日：2002-04-11
申请人： Tadahiro Ohmi , Takashi Imaoka , Hisayuki Shimada , Nobuhiro Konishi , Mizuho Morita , Takeo Yamashita , Tadashi Shibata , Hidetoshi Wakamatsu , Jinzo Watanabe , Shintaro Aoyama , Masakazu Nakamura
发明人： Tadahiro Ohmi , Takashi Imaoka , Hisayuki Shimada , Nobuhiro Konishi , Mizuho Morita , Takeo Yamashita , Tadashi Shibata , Hidetoshi Wakamatsu , Jinzo Watanabe , Shintaro Aoyama , Masakazu Nakamura
IPC分类号： B01J19/08 , C23C8/10 , C23C8/36 , C23C14/02 , C23C14/48 , C23C16/02 , C23C16/44 , C30B23/02 , C30B25/02 , G01N23/00 , H01L21/66 , H01L21/31
CPC分类号： C30B23/02 , C23C8/10 , C23C8/36 , C23C14/022 , C23C14/48 , C23C16/02 , C23C16/4401 , C30B25/02 , C30B29/16 , Y10S438/903
摘要： A method of forming an oxide film having high insularity capability is performed within an ultra clean environment, using charged particles.
摘要翻译：使用带电粒子在超清洁环境下进行形成具有高绝缘性的氧化膜的方法。

6. 发明授权

US6107007A Lithography process 失效
标题翻译：平版印刷工艺
公开(公告)号：US6107007A
公开(公告)日：2000-08-22
申请号：US15437
申请日：1993-02-09
申请人： Tadahiro Ohmi , Hisayuki Shimada , Shigeki Shimomura , Akiyoshi Suzuki , Mamoru Miyawaki , Miyoko Noguchi
发明人： Tadahiro Ohmi , Hisayuki Shimada , Shigeki Shimomura , Akiyoshi Suzuki , Mamoru Miyawaki , Miyoko Noguchi
IPC分类号： G03F7/20 , G03F7/32 , G03C5/00
CPC分类号： G03F7/701 , G03F7/322
摘要： A lithography process for forming a pattern having different sizes or different shapes of pattern components, comprises steps of exposing a resist to a predetermined light pattern by modified illumination, and removing, at least one step of forming the resist pattern, a region of the resist by employing a lithography-developing solution containing a surfactant, the surfactant being capable of promoting dissolution of a smaller pattern component to be removed of the resist.The surfactant is represented by the general formula below:HO(CH.sub.2 CH.sub.2 O).sub.a (CH(CH.sub.3)CH.sub.2 O).sub.b (CH.sub.2 CH.sub.2 O).sub.c Hwhere a, b, and c are respectively an integer.The surfactant satisfies the relation:(A+C)/(A+B+C).ltoreq.0.3where A represents the molecular weight of HO(CH.sub.2 CH.sub.2 O).sub.a, B represents the molecular weight of (CH(CH.sub.3)CH.sub.2 O).sub.b, and C represents the molecular weight of (CH.sub.2 CH.sub.2 O).sub.c H.
摘要翻译：用于形成具有不同尺寸或不同形状的图案部件的图案的光刻工艺包括以下步骤：通过改进的照明将抗蚀剂暴露于预定的光图案，以及去除形成抗蚀剂图案的至少一个步骤，通过使用含有表面活性剂的光刻显影液，表面活性剂能够促进较小的图案成分的溶解，以除去抗蚀剂。表面活性剂由以下通式表示：HO（CH 2 CH 2 O）a（CH（CH 3）CH 2 O）b（CH 2 CH 2 O）c H其中a，b和c分别为整数。表面活性剂满足下列关系：（A + C）/（A + B + C）≤0.3其中A表示HO（CH 2 CH 2 O）a的分子量，B表示（CH（CH 3）CH 2 O）b的分子量，C表示（CH 2 CH 2 O）c H的分子量。

7. 发明申请

US20070117303A1 Semiconductor memory device (as amended) 有权
标题翻译：半导体存储器件（经修改）
公开(公告)号：US20070117303A1
公开(公告)日：2007-05-24
申请号：US11656438
申请日：2007-01-23
申请人： Hideki Komori , Hisayuki Shimada , Yu Sun , Hiroyuki Kinoshita
发明人： Hideki Komori , Hisayuki Shimada , Yu Sun , Hiroyuki Kinoshita
IPC分类号： H01L21/8238
CPC分类号： H01L27/11521 , H01L21/823425 , H01L21/823468 , H01L27/115 , H01L27/11568 , Y10S257/90
摘要： A drain (7) includes a lightly-doped shallow impurity region (7a) aligned with a control gate (5), and a heavily-doped deep impurity region (7b) aligned with a sidewall film (8) and doped with impurities at a concentration higher than that of the lightly-doped shallow impurity region (7a). The lightly-doped shallow impurity region (7a) leads to improvement of the short-channel effect and programming efficiency. A drain contact hole forming portion (70) is provided to the heavily-doped impurity region (7b) to reduce the contact resistance at the drain (7).
摘要翻译：漏极（7）包括与控制栅极（5）对准的轻掺杂浅杂质区域（7a）和与侧壁膜（8）对准并掺杂杂质的重掺杂深杂质区域（7b）其浓度高于轻掺杂浅杂质区（7a）的浓度。轻掺杂的浅杂质区（7a）导致短沟道效应和编程效率的提高。漏极接触孔形成部分（70）设置到重掺杂杂质区域（7b）以降低漏极（7）处的接触电阻。

8. 发明授权

US06272046B1 Individual source line to decrease column leakage 有权
标题翻译：单个源线减少柱泄漏
公开(公告)号：US06272046B1
公开(公告)日：2001-08-07
申请号：US09562748
申请日：2000-05-02
申请人： Hisayuki Shimada
发明人： Hisayuki Shimada
IPC分类号： G11C1604
CPC分类号： G11C16/26
摘要： A flash memory device and a method to read the flash memory device to decrease leakage current during read. The flash memory device has a source line control circuit connected to the sources of memory cells in a row and during read the source line control circuit connects the sources of the memory cells in a row to ground.
摘要翻译：闪速存储器件和读取闪存器件以减少读取期间的漏电流的方法。闪存器件具有连接到行中的存储器单元的源的源极线控制电路，并且在读取期间，源极线控制电路将存储器单元的源极连接到地。

9. 发明授权

US07202540B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US07202540B2
公开(公告)日：2007-04-10
申请号：US11066567
申请日：2005-02-28
申请人： Hideki Komori , Hisayuki Shimada , Yu Sun , Hiroyuki Kinoshita
发明人： Hideki Komori , Hisayuki Shimada , Yu Sun , Hiroyuki Kinoshita
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/11521 , H01L21/823425 , H01L21/823468 , H01L27/115 , H01L27/11568 , Y10S257/90
摘要： A drain (7) includes a lightly-doped shallow impurity region (7a) aligned with a control gate (5), and a heavily-doped deep impurity region (7b) aligned with a sidewall film (8) and doped with impurities at a concentration higher than that of the lightly-doped shallow impurity region (7a). The lightly-doped shallow impurity region (7a) leads to improvement of the short-channel effect and programming efficiency. A drain contact hole forming portion (70) is provided to the heavily-doped impurity region (7b) to reduce the contact resistance at the drain (7).
摘要翻译：漏极（7）包括与控制栅极（5）对准的轻掺杂浅杂质区域（7a）和与侧壁膜（8）对准并掺杂杂质的重掺杂深杂质区域（7b）其浓度高于轻掺杂浅杂质区（7a）的浓度。轻掺杂的浅杂质区域（7a）导致短沟道效应和编程效率的改善。漏极接触孔形成部分（70）设置到重掺杂杂质区域（7b）以降低漏极（7）处的接触电阻。

10. 发明申请

US20070114617A1 Semiconductor memory device 有权
公开(公告)号：US20070114617A1
公开(公告)日：2007-05-24
申请号：US11656437
申请日：2007-01-23
申请人： Hideki Komori , Hisayuki Shimada , Yu Sun , Hiroyuki Kinoshita
发明人： Hideki Komori , Hisayuki Shimada , Yu Sun , Hiroyuki Kinoshita
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L27/11521 , H01L21/823425 , H01L21/823468 , H01L27/115 , H01L27/11568 , Y10S257/90
摘要： A drain (7) includes a lightly-doped shallow impurity region (7a) aligned with a control gate (5), and a heavily-doped deep impurity region (7b) aligned with a sidewall film (8) and doped with impurities at a concentration higher than that of the lightly-doped shallow impurity region (7a). The lightly-doped shallow impurity region (7a) leads to improvement of the short-channel effect and programming efficiency. A drain contact hole forming portion (70) is provided to the heavily-doped impurity region (7b) to reduce the contact resistance at the drain (7).

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