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1. 发明申请

US20100183827A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20100183827A1
公开(公告)日：2010-07-22
申请号：US12663764
申请日：2008-06-11
申请人： Masaki Hirayama , Tadahiro Ohmi , Takahiro Horiguchi
发明人： Masaki Hirayama , Tadahiro Ohmi , Takahiro Horiguchi
IPC分类号： H05H1/46 , C23C16/511
CPC分类号： C23C16/511 , B05C13/00 , H01J37/32192 , H01J37/32266 , H05H1/46
摘要： A plasma processing apparatus capable of reducing the use amount of a dielectric member is provided. The plasma processing apparatus 1 includes a metal processing chamber 4 configured to accommodate therein a substrate G to be plasma-processed; an electromagnetic wave source 34 that supplies an electromagnetic wave necessary to excite plasma in the processing chamber 4; one or more dielectric members 25 provided on a bottom surface of a cover 3 of the processing chamber 4 and configured to transmit the electromagnetic wave supplied from the electromagnetic wave source 34 into the inside of the processing chamber 4, a portion of each dielectric member 25 being exposed to the inside of the processing chamber 4; and a surface wave propagating section 51 installed adjacent to the dielectric member 25 and configured to propagate the electromagnetic wave along a metal surface exposed to the inside of the processing chamber 4.
摘要翻译：提供能够减少电介质部件的使用量的等离子体处理装置。等离子体处理装置1包括金属处理室4，其配置为在其中容纳待等离子体处理的基板G; 提供在处理室4中激发等离子体所需的电磁波的电磁波源34; 设置在处理室4的盖3的底面上的一个或多个电介质构件25，用于将从电磁波源34提供的电磁波传送到处理室4的内部，每个电介质构件25的一部分暴露于处理室4的内部; 以及表面波传播部分51，其安装在电介质部件25附近，并被构造成沿着暴露于处理室4的内部的金属表面传播电磁波。

2. 发明申请

US20070054064A1 Microwave plasma processing method, microwave plasma processing apparatus, and its plasma head 审中-公开
标题翻译：微波等离子体处理方法，微波等离子体处理装置及其等离子体头
公开(公告)号：US20070054064A1
公开(公告)日：2007-03-08
申请号：US10566241
申请日：2004-12-24
申请人： Tadahiro Ohmi , Masaki Hirayama , Takahiro Horiguchi , Akihiko Hiroe , Masayuki Kitamura
发明人： Tadahiro Ohmi , Masaki Hirayama , Takahiro Horiguchi , Akihiko Hiroe , Masayuki Kitamura
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： H01L21/306 , H05H1/46 , H05H2001/4622 , H05H2001/463
摘要： A microwave plasma processing method and, in which a linear plasma is produced by means of a microwave, and an object to be processed is subjected to processing under atmospheric pressure or under a pressure near atmospheric pressure when the object is moved, while a surface of the object is maintained at a horizontal position with respect to the linear plasma. A plasma head has an H-plane slot antenna, and slots are arranged alternately on both sides of a centerline of a waveguide at a pitch of λg/2 (λg: wavelength of the microwave with the waveguide). A uniforming line having a distance of n·λg/2 from the slots to an emission end of the plasma head is provided (n: an integral number).
摘要翻译：微波等离子体处理方法，其中通过微波产生线性等离子体和待处理物体在大气压力下或当物体移动时在大气压附近的压力下进行处理，同时物体相对于线性等离子体保持在水平位置。等离子体头具有H平面缝隙天线，并且以波兰的间距（lambdag：具有波导的微波的波长）交替地布置在波导的中心线的两侧。提供了从槽到发射端等离子体头的距离为n.lambdag / 2的均匀线（n：整数）。

3. 发明申请

US20070102403A1 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US20070102403A1
公开(公告)日：2007-05-10
申请号：US11592253
申请日：2006-11-03
申请人： Tadahiro Ohmi , Masaki Hirayama , Takahiro Horiguchi
发明人： Tadahiro Ohmi , Masaki Hirayama , Takahiro Horiguchi
IPC分类号： B23K9/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32229
摘要： The purpose of the present invention is to provide homogeneous plasma in longitudinal direction of a plasma processing apparatus applicable to multiple processes. A microwave waveguide 10 with a plurality of variable couplers 12 is placed in a vacuum chamber 21. The microwave generated in a microwave generator 23 is introduced into the microwave waveguide 10 via a waveguide 24. And a plasma 22 in the chamber 21 is generated by the microwave 25. Intensity distribution of the microwave 25 in the microwave waveguide 10 can be varied by moving a plurality of variable couplers 12 individually upward or downward as shown by two-way arrow.
摘要翻译：本发明的目的是提供适用于多个工艺的等离子体处理装置的纵向均匀等离子体。具有多个可变耦合器12的微波波导10被放置在真空室21中。在微波发生器23中产生的微波通过波导24被引入到微波波导10中。并且通过微波25产生室21中的等离子体22。如微波波导10中的微波25的强度分布可以通过单独向上或向下移动多个可变耦合器12来改变，如双向箭头所示。

4. 发明授权

US07723637B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US07723637B2
公开(公告)日：2010-05-25
申请号：US11592253
申请日：2006-11-03
申请人： Tadahiro Ohmi , Masaki Hirayama , Takahiro Horiguchi
发明人： Tadahiro Ohmi , Masaki Hirayama , Takahiro Horiguchi
IPC分类号： B23K10/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32229
摘要： The purpose of the present invention is to provide homogeneous plasma in longitudinal direction of a plasma processing apparatus applicable to multiple processes. A microwave waveguide 10 with a plurality of variable couplers 12 is placed in a vacuum chamber 21. The microwave generated in a microwave generator 23 is introduced into the microwave waveguide 10 via a waveguide 24. And a plasma 22 in the chamber 21 is generated by the microwave 25. Intensity distribution of the microwave 25 in the microwave waveguide 10 can be varied by moving a plurality of variable couplers 12 individually upward or downward as shown by two-way arrow.
摘要翻译：本发明的目的是提供适用于多个工艺的等离子体处理装置的纵向均匀等离子体。具有多个可变耦合器12的微波波导10被放置在真空室21中。在微波发生器23中产生的微波通过波导管24被引入微波波导10中。室21中的等离子体22由微波25.微波25中的微波25的强度分布可以通过单独向上或向下移动多个可变耦合器12来改变，如双向箭头所示。

5. 发明授权

US07432468B2 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US07432468B2
公开(公告)日：2008-10-07
申请号：US11694102
申请日：2007-03-30
申请人： Shinsuke Oka , Takahiro Horiguchi , Kazuaki Nishimura , Masayuki Kitamura , Tadahiro Ohmi , Masaki Hirayama
发明人： Shinsuke Oka , Takahiro Horiguchi , Kazuaki Nishimura , Masayuki Kitamura , Tadahiro Ohmi , Masaki Hirayama
IPC分类号： B23K10/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32238
摘要： A microwave plasma processing apparatus 100 allows microwaves, passed through a plurality of slots 37, to be transmitted through a plurality of dielectric parts 31 supported by beams 26, raises a gas to plasma with the transmitted microwaves and processes a substrate G with the plasma. The beams 26 are made to project out toward the substrate so as to ensure that the plasma electron density Ne around the ends of the beams 26 is equal to or greater than a cutoff plasma electron density Nc. The projecting beams 26 inhibits interference attributable to surface waves generated with the electrical field energy of microwaves transmitted through adjacent dielectric parts 31 and interference attributable to electrons and ions propagated through the plasma generated under a given dielectric part 31 to reach the plasma generated under an adjacent dielectric part as the plasma generated under the individual dielectric parts 31 is diffused.
摘要翻译：微波等离子体处理装置100允许通过多个狭槽37的微波透过由梁26支撑的多个电介质部分31，并使透射的微波将气体升高到等离子体并用等离子体处理衬底G. 使梁26朝向基板突出，以确保梁26的端部周围的等离子体电子密度Ne等于或大于截止等离子体电子密度Nc。投影光束26抑制归因于通过相邻电介质部件31传播的微波的电场能产生的表面波的干扰，以及由在给定电介质部分31下产生的等离子体传播的电子和离子产生的干扰，以达到在相邻电介质部分31之下产生的等离子体作为在各个电介质部31下产生的等离子体的介质部分扩散。

6. 发明申请

US20070235425A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 失效
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20070235425A1
公开(公告)日：2007-10-11
申请号：US11694102
申请日：2007-03-30
申请人： Shinsuke Oka , Takahiro Horiguchi , Kazuaki Nishimura , Masayuki Kitamura , Tadahiro Ohmi , Masaki Hirayama
发明人： Shinsuke Oka , Takahiro Horiguchi , Kazuaki Nishimura , Masayuki Kitamura , Tadahiro Ohmi , Masaki Hirayama
IPC分类号： B23K9/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32238
摘要： A microwave plasma processing apparatus 100 allows microwaves, passed through a plurality of slots 37, to be transmitted through a plurality of dielectric parts 31 supported by beams 26, raises a gas to plasma with the transmitted microwaves and processes a substrate G with the plasma. The beams 26 are made to project out toward the substrate so as to ensure that the plasma electron density Ne around the ends of the beams 26 is equal to or greater than a cutoff plasma electron density Nc. The projecting beams 26 inhibits interference attributable to surface waves generated with the electrical field energy of microwaves transmitted through adjacent dielectric parts 31 and interference attributable to electrons and ions propagated through the plasma generated under a given dielectric part 31 to reach the plasma generated under an adjacent dielectric part as the plasma generated under the individual dielectric parts 31 is diffused.
摘要翻译：微波等离子体处理装置100允许通过多个狭槽37的微波透过由梁26支撑的多个电介质部分31，并使透射的微波将气体升高到等离子体并用等离子体处理衬底G. 使梁26朝向基板突出，以确保梁26的端部周围的等离子体电子密度Ne等于或大于截止等离子体电子密度Nc。投影光束26抑制归因于通过相邻电介质部件31传播的微波的电场能产生的表面波的干扰，以及由在给定电介质部分31下产生的等离子体传播的电子和离子产生的干扰，以达到在相邻电介质部分31之下产生的等离子体作为在各个电介质部31下产生的等离子体的介质部分扩散。

7. 发明申请

US20070181531A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20070181531A1
公开(公告)日：2007-08-09
申请号：US11671787
申请日：2007-02-06
申请人： Takahiro Horiguchi , Tadahiro Ohmi , Masaki Hirayama
发明人： Takahiro Horiguchi , Tadahiro Ohmi , Masaki Hirayama
IPC分类号： C23F1/00 , H01L21/306 , H01L21/302 , H01L21/461 , B44C1/22
CPC分类号： C23C16/24 , C23C16/45568 , C23C16/511 , H01J37/32192 , H01J37/32238 , H01J37/3244
摘要： A microwave plasma processing apparatus 100 includes a plurality of dielectric parts 31, through which microwaves are transmitted via a slot, and gas nozzles 27 disposed at positions lower than the dielectric parts 31. The dielectric parts 31 and the gas nozzles 27 are each constituted with a porous portion and a dense portion. A first gas supply unit supplies argon gas into a processing chamber through porous portions 31P at the individual dielectric parts 31. A second gas supply unit supplies silane gas and hydrogen gas into the processing chamber through porous portions 27P at the gas nozzles 27. The gases decelerate as they travel through the porous portions and, as a result, excessive agitation in the gases can be inhibited. Consequently, uniform plasma is generated and a high quality amorphous silicon film can be formed with the plasma.
摘要翻译：微波等离子体处理装置100包括多个电介质部31，微波经由狭槽传播，并且设置在低于介质部31的位置的气体喷嘴27。电介质部31和气体喷嘴27分别由多孔部和致密部构成。第一气体供给单元通过各个电介质部31的多孔部31 P将氩气供给到处理室。第二气体供给单元通过气体喷嘴27处的多孔部分27 P向处理室供给硅烷气体和氢气。气体在穿过多孔部分时减速，结果可以抑制气体中的过度搅动。因此，产生均匀的等离子体，并且可以用等离子体形成高品质的非晶硅膜。

8. 发明申请

US20090152243A1 PLASMA PROCESSING APPARATUS AND METHOD THEREOF 审中-公开
标题翻译：等离子体处理装置及其方法
公开(公告)号：US20090152243A1
公开(公告)日：2009-06-18
申请号：US12088440
申请日：2006-09-27
申请人： Takahiro Horiguchi , Shinsuke Oka , Masaki Hirayama
发明人： Takahiro Horiguchi , Shinsuke Oka , Masaki Hirayama
IPC分类号： C23F1/00 , C23C16/513 , C23F1/08 , C23C16/511
CPC分类号： H05H1/46 , H01J37/32192
摘要： [Problem] To provide a plasma processing apparatus and a method thereof, which is capable of generating plasma evenly on the lower surface of a dielectric.[Means for Solving] A plasma processing apparatus 1, in which microwave is propagated into a dielectric 32 provided on an upper surface of a processing chamber 4 via plural slots 70 formed on a lower surface of a waveguide 35 and a processing gas supplied in the processing chamber 4 is made into plasma using electric field energy of an electromagnetic field formed on the surface of the dielectric to perform plasma processing on a substrate G. The plasma processing apparatus 1, concave portions 80a to 80g having different depth are formed on a lower surface of dielectric 32. Further, the depths of the respective concave portions 80a to 80g are made different to control a plasma generation on the lower surface of the dielectric 32.
摘要翻译：本发明提供能够在电介质的下表面上均匀地产生等离子体的等离子体处理装置及其方法。 [解决方案]等离子体处理装置1，其中微波通过形成在波导35的下表面上的多个槽70和提供在波导35的下表面上的处理气体传播到设置在处理室4的上表面上的电介质32中使用形成在电介质的表面上的电磁场的电场能将处理室4制成等离子体，以在基板G上进行等离子体处理。等离子体处理装置1，具有不同深度的凹部80a至80g形成在下部另外，各凹部80a〜80g的深度不同，能够控制电介质32的下表面的等离子体产生。

9. 发明授权

US07934468B2 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US07934468B2
公开(公告)日：2011-05-03
申请号：US11762472
申请日：2007-06-13
申请人： Takahiro Horiguchi
发明人： Takahiro Horiguchi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/511 , C23C16/45565 , H01J37/32192 , H01J37/32229
摘要： Microwaves propagated through the waveguide 30, a plurality of slots 31 and the dielectric members 33 in this order are supplied into the processing chamber U where they are used to excite a gas to plasma to be used to process a substrate G. Alumina 50 fills an area inside the waveguide 30 near an end surface C thereof, and the remaining area inside the waveguide is filled with Teflon 35. Since the alumina 50 has a smaller guide wavelength λg compared to the Teflon 35, the mechanical length measured from the end surface C of the waveguide 30 to the center of the closest slot is reduced compared to the mechanical length of a waveguide filled only with Teflon 35 while maintaining the physical characteristic length from the end surface C to the closest slot center at λg/4.
摘要翻译：通过波导30传播的微波，多个狭缝31和电介质构件33依次被提供到处理室U中，在那里它们被用于激发用于处理衬底G的等离子体的气体。氧化铝50填充波导管30的靠近其端面C的区域内，波导内的其余区域填充有特氟龙35.由于氧化铝50与特氟龙35相比具有较小的导向波长λg，所以从端面C测量的机械长度相对于仅用特氟隆35填充的波导的机械长度，相对于最接近的槽的中心减小，同时保持从端面C到最接近的槽中心的物理特性长度为λg/ 4。

10. 发明授权

US06660097B2 Single-substrate-processing apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的单衬底处理设备
公开(公告)号：US06660097B2
公开(公告)日：2003-12-09
申请号：US09884985
申请日：2001-06-21
申请人： Takahiro Horiguchi
发明人： Takahiro Horiguchi
IPC分类号： C23C1600
CPC分类号： H01L21/67011 , C23C16/4581 , C23C16/4586
摘要： A single-substrate-processing apparatus includes an airtight process chamber in which a ceramic worktable is supported by a ceramic pedestal. The bottom of the pedestal is provided with a flange, which is attached to the bottom of the process chamber by a flange holder. The flange holder has upper and lower frames sandwiching the flange therebetween. The flange holder is detachably fixed by fixing bolts to the bottom of the process chamber from outside the process chamber.
摘要翻译：单基板处理装置包括气密处理室，其中陶瓷工作台由陶瓷基座支撑。基座的底部设有凸缘，凸缘通过凸缘保持器附接到处理室的底部。凸缘保持器具有夹在其间的凸缘的上框架和下框架。法兰座通过从处理室外部固定螺栓可拆卸地固定在处理室的底部。

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