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1. 发明授权

US06611188B2 Integrated vertical spiral inductor on semiconductor material 有权
标题翻译：半导体材料上集成垂直螺旋电感
公开(公告)号：US06611188B2
公开(公告)日：2003-08-26
申请号：US10233771
申请日：2002-09-03
申请人： Kiat Seng Yeo , Hai Yeng Tan , Jiang Guo Ma , Manh Anh Do , Kok Wai Johnny Chew
发明人： Kiat Seng Yeo , Hai Yeng Tan , Jiang Guo Ma , Manh Anh Do , Kok Wai Johnny Chew
IPC分类号： H01F2729
CPC分类号： H01L23/645 , H01F17/0013 , H01F41/041 , H01L23/5227 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A new structure is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of spiral design and perpendicular to the plane of the underlying substrate. Conductor line width can be selected as narrow or wide, ferromagnetic material can be used to fill the spaces between the conductors of the spiral inductor. The spiral inductor of the invention can further by used in series or in series with conventional horizontal inductors.
摘要翻译：提供了一种新的结构，用于在硅半导体衬底的表面上产生电感器。电感器具有螺旋设计并且垂直于下面的衬底的平面。导体线宽可以选择为窄或宽，铁磁材料可用于填充螺旋电感器导体之间的空间。本发明的螺旋电感器还可以与传统的水平电感器串联或串联使用。

2. 发明授权

US06292060B1 Technique to generate negative conductance in CMOS tuned cascode RF amplifiers 失效
标题翻译：在CMOS调谐共源共RF放大器中产生负电导的技术
公开(公告)号：US06292060B1
公开(公告)日：2001-09-18
申请号：US09395288
申请日：1999-09-13
申请人： Kiat-Seng Yeo , Kok Lim Chan , Manh Anh Do , Jian Guo Ma , Johnny Kok Wai Chew
发明人： Kiat-Seng Yeo , Kok Lim Chan , Manh Anh Do , Jian Guo Ma , Johnny Kok Wai Chew
IPC分类号： H03F3191
CPC分类号： H03F1/56 , H03F1/223 , H03F2200/294 , H03F2200/369 , H03F2200/372
摘要： In this invention a single additional capacitor is added to a tuned cascode LNA which boosts the circuit Q and the gain of the amplifier. The added capacitor creates a negative real part of the impedance which when combined with the impedance of the LC tank circuit improves both the Q and the gain of the amplifier. The capacitor does not dissipate any power, and being a passive device the capacitor does not add additional noise to the circuit. With an improved gain there is a much improved signal to noise ratio. The higher Q allows the amplifier to provide some additional bandpass and reduce image reduction requirements in subsequent amplifier stages.
摘要翻译：在本发明中，将单个附加电容器添加到调谐共源共栅LNA，其升高电路Q和放大器的增益。增加的电容产生阻抗的负实部，当与LC谐振电路的阻抗相结合时，可以提高放大器的Q和增益。电容器不会耗散任何电源，而作为无源器件，电容器不会对电路增加额外的噪声。随着改进的增益，信噪比有了很大改善。较高的Q允许放大器提供一些额外的带通，并降低后续放大器级中的图像降低要求。

3. 发明授权

US08237531B2 Tunable high quality factor inductor 有权
标题翻译：可调高品质因数电感
公开(公告)号：US08237531B2
公开(公告)日：2012-08-07
申请号：US11967270
申请日：2007-12-31
申请人： Ping Qiu , Chirn Chye Boon , Johnny Kok Wai Chew , Kiat Seng Yeo , Manh Anh Do , Lap Chan , Suh Fei Lim
发明人： Ping Qiu , Chirn Chye Boon , Johnny Kok Wai Chew , Kiat Seng Yeo , Manh Anh Do , Lap Chan , Suh Fei Lim
IPC分类号： H01F5/00 , H01F27/28 , H03J3/00
CPC分类号： H03J3/20 , H01F17/0006 , H01F2017/0073 , H03H11/48
摘要： An inductor circuit with high quality (Q) factor includes a primary inductor and a compensation sub-circuit. The compensation sub-circuit is electrically isolated from the primary inductor. The compensation sub-circuit is magnetically coupled with the primary inductor to compensate the loss in the primary inductor.
摘要翻译：具有高质量（Q）因子的电感器电路包括初级电感器和补偿子电路。补偿子电路与主电感器电隔离。补偿子电路与初级电感器磁耦合，以补偿初级电感器的损耗。

4. 发明授权

US07570144B2 Integrated transformer and method of fabrication thereof 有权
标题翻译：集成变压器及其制造方法
公开(公告)号：US07570144B2
公开(公告)日：2009-08-04
申请号：US11750341
申请日：2007-05-18
申请人： Chee Chong Lim , Kok Wai Chew , Kiat Seng Yeo , Suh Fei Lim , Manh Anh Do , Lap Chan
发明人： Chee Chong Lim , Kok Wai Chew , Kiat Seng Yeo , Suh Fei Lim , Manh Anh Do , Lap Chan
IPC分类号： H01F5/00
CPC分类号： H01F17/0006 , H01F17/0013 , H01F19/08 , H01F27/2804 , H01F41/041 , H01L23/5227 , H01L2924/0002 , H01L2924/3011 , Y10T29/4902 , H01L2924/00
摘要： An integrated transformer structure includes a first coil element associated with a transverse axis, the first coil element having at least one turn. The first coil element includes a first portion provided on a first lateral level, and a second portion provided on a second lateral level. The first and second lateral levels being mutually spaced apart along said transverse axis. The first and second portions being displaced laterally from said axis by different respective distances. At least one crossover portion of the first coil element, in which the first coil element being configured to provide a conducting path through at least a portion of the first portion of the first coil element to the crossover portion, through the crossover portion and subsequently through at least a portion of the second portion of the first coil element, in which any change of flow direction along said path is less than 90° in a lateral direction.
摘要翻译：集成变压器结构包括与横向轴线相关联的第一线圈元件，第一线圈元件具有至少一匝。第一线圈元件包括设置在第一横向水平面上的第一部分和设置在第二横向水平面上的第二部分。第一和第二横向水平面沿着所述横向轴线相互间隔开。第一和第二部分从所述轴线横向移位不同的相应距离。所述第一线圈元件的至少一个交叉部分，其中所述第一线圈元件被配置为提供通过所述交叉部分穿过所述交叉部分的所述第一线圈元件的所述第一部分的至少一部分的导电路径，并且随后通过第一线圈元件的第二部分的至少一部分，其中沿着所述路径的流动方向的任何变化在横向方向上小于90°。

5. 发明申请

US20080284553A1 TRANSFORMER WITH EFFECTIVE HIGH TURN RATIO 有权
标题翻译：具有高有效转换比的变压器
公开(公告)号：US20080284553A1
公开(公告)日：2008-11-20
申请号：US11779892
申请日：2007-07-19
申请人： Chee Chong LIM , Kok Wai CHEW , Kiat Seng YEO , Suh Fei LIM , Manh Anh DO , Lap CHAN
发明人： Chee Chong LIM , Kok Wai CHEW , Kiat Seng YEO , Suh Fei LIM , Manh Anh DO , Lap CHAN
IPC分类号： H01F5/00 , H01F27/28 , H01F41/02
CPC分类号： H01F27/2804 , H01F17/0013 , H01F27/006 , H01F2017/0073 , H01L2924/3011 , Y10T29/4902
摘要： Embodiments of the invention provide a transformer comprising: a first coil element having a transverse axis along a transverse direction, the first coil element having p turns where p is greater than or equal to 1; and a second coil element having a transverse axis generally parallel to the transverse axis of the first coil element, the second coil element having n turns, where n is greater than or equal to 5 p; wherein the first and second coil elements are arranged to provide electromagnetic coupling between the coil elements along a portion of a length of the second coil element in both a transverse direction parallel to the transverse axes and a lateral direction, wherein the lateral direction is a direction normal to the transverse axes.
摘要翻译：本发明的实施例提供了一种变压器，包括：第一线圈元件，其沿着横向具有横向轴线，所述第一线圈元件具有p匝，其中p大于或等于1; 以及第二线圈元件，其具有大致平行于所述第一线圈元件的横向轴线的横轴，所述第二线圈元件具有n圈，其中n大于或等于5p; 其中所述第一和第二线圈元件布置成沿平行于横向轴线的横向方向和横向方向沿着所述第二线圈元件的长度的一部分在所述线圈元件之间提供电磁耦合，其中所述横向方向是垂直于横轴。

6. 发明授权

US06998953B2 High performance RF inductors and transformers using bonding technique 失效
公开(公告)号：US06998953B2
公开(公告)日：2006-02-14
申请号：US11095268
申请日：2005-03-31
申请人： Kiat Seng Yeo , Hai Peng Ian , Jiangud Ma , Manh Anh Do , Johnny Kok Wai Chew
发明人： Kiat Seng Yeo , Hai Peng Ian , Jiangud Ma , Manh Anh Do , Johnny Kok Wai Chew
IPC分类号： H01F5/00
CPC分类号： H01L24/48 , H01F17/0006 , H01F17/0033 , H01F41/041 , H01L23/5227 , H01L23/645 , H01L24/45 , H01L24/49 , H01L2223/6611 , H01L2224/05554 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48472 , H01L2224/48599 , H01L2224/4911 , H01L2224/49175 , H01L2224/49176 , H01L2224/49431 , H01L2224/85207 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01079 , H01L2924/10329 , H01L2924/14 , H01L2924/1423 , H01L2924/15787 , H01L2924/19041 , H01L2924/19042 , H01L2924/19104 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2224/85399 , H01L2224/05599
摘要： A method of fabricating an inductor using bonding techniques in the manufacture of integrated circuits is described. Bonding pads are provided over a semiconductor substrate. Input/output connections are made to at least two of the bonding pads. A plurality of wire bond loops are made between each two of the bonding pads wherein the plurality of wire bond loops forms the inductor.

7. 发明授权

US06521939B1 High performance integrated varactor on silicon 有权
标题翻译：硅片上高性能集成变容二极管
公开(公告)号：US06521939B1
公开(公告)日：2003-02-18
申请号：US09672764
申请日：2000-09-29
申请人： Kiat-Seng Yeo , Chun Qi Geng , Kok-Wai Chew , Manh-Anh Do , Jian Guo Ma
发明人： Kiat-Seng Yeo , Chun Qi Geng , Kok-Wai Chew , Manh-Anh Do , Jian Guo Ma
IPC分类号： H01L27108
CPC分类号： H01L29/94 , H01L27/0808 , H01L29/66181
摘要： A new MOS varactor device is described. A bottom electrode comprises a plurality of diffusion junctions in a semiconductor substrate. The semiconductor substrate may be n-type or p-type. The diffusion junctions are arranged in a two-dimensional array. The diffusion junction may be either n-type or p-type. The diffusion junctions may be contained in a p-well or an n-well. A dielectric layer overlies the semiconductor substrate. A top electrode overlies the dielectric layer. The top electrode comprises a single polygon containing a two-dimensional array of openings therein that exposes the diffusion junctions. The top electrode preferably comprises polysilicon. An interlevel dielectric layer overlies the top electrode and the diffusion junction. The interlevel dielectric layer has a two-dimensional array of contact openings that expose the underlying diffusion junctions. A patterned metal layer overlies the interlevel dielectric layer and contacts the diffusion junctions through the contact openings.
摘要翻译：描述了一种新的MOS变容二极管装置。底部电极在半导体衬底中包括多个扩散结。半导体衬底可以是n型或p型。扩散结被排列成二维阵列。扩散结可以是n型或p型。扩散结可以包含在p阱或n阱中。电介质层覆盖在半导体衬底上。顶部电极覆盖在电介质层上。顶部电极包括单个多边形，其中包含其中的开口的二维阵列，其暴露扩散结。顶部电极优选包括多晶硅。层间电介质层覆盖上电极和扩散结。层间电介质层具有暴露下面的扩散结的接触开口的二维阵列。图案化金属层覆盖层间电介质层，并通过接触开口接触扩散接头。

8. 发明授权

US07023315B2 High performance RF inductors and transformers using bonding technique 失效
公开(公告)号：US07023315B2
公开(公告)日：2006-04-04
申请号：US10448882
申请日：2003-05-29
申请人： Kiat Seng Yeo , Hai Peng Tan , Jianguo Ma , Manh Anh Do , Kok Wai Johnny Chew
发明人： Kiat Seng Yeo , Hai Peng Tan , Jianguo Ma , Manh Anh Do , Kok Wai Johnny Chew
IPC分类号： H01F5/00
CPC分类号： H01L24/48 , H01F17/0006 , H01F17/0033 , H01F41/041 , H01L23/5227 , H01L23/645 , H01L24/45 , H01L24/49 , H01L2223/6611 , H01L2224/05554 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48472 , H01L2224/48599 , H01L2224/4911 , H01L2224/49175 , H01L2224/49176 , H01L2224/49431 , H01L2224/85207 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01079 , H01L2924/10329 , H01L2924/14 , H01L2924/1423 , H01L2924/15787 , H01L2924/19041 , H01L2924/19042 , H01L2924/19104 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2224/85399 , H01L2224/05599
摘要： A method of fabricating an inductor using bonding techniques in the manufacture of integrated circuits is described. Bonding pads are provided over a semiconductor substrate. Input/output connections are made to at least two of the bonding pads. A plurality of wire bond loops are made between each two of the bonding pads wherein the plurality of wire bond loops forms the inductor.

9. 发明授权

US06535098B1 Integrated helix coil inductor on silicon 有权
公开(公告)号：US06535098B1
公开(公告)日：2003-03-18
申请号：US09519866
申请日：2000-03-06
申请人： Kiat Seng Yeo , Hai Peng Tan , Jian Guo Ma , Manh Anh Do , Kok Wai Johnny Chew
发明人： Kiat Seng Yeo , Hai Peng Tan , Jian Guo Ma , Manh Anh Do , Kok Wai Johnny Chew
IPC分类号： H01F500
CPC分类号： H01L28/10 , H01L27/08
摘要： A new structure and method is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of a helix coil design having upper level and lower level conductors further having an axis whereby the axis of the helix coil of the inductor is parallel to the plane of the underlying substrate. Under the first embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is uniform. Under the second embodiment of the invention the height of the helix coil of the inductor of the invention is uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil. Under the third embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is non-uniform. Under the fourth embodiment of the invention the height of the helix coil of the inductor of the invention is non-uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil.

10. 发明授权

US08242872B2 Transformer with effective high turn ratio 有权
标题翻译：变压器有效高匝数比
公开(公告)号：US08242872B2
公开(公告)日：2012-08-14
申请号：US11779892
申请日：2007-07-19
申请人： Chee Chong Lim , Kok Wai Chew , Kiat Seng Yeo , Suh Fei Lim , Manh Anh Do , Lap Chan
发明人： Chee Chong Lim , Kok Wai Chew , Kiat Seng Yeo , Suh Fei Lim , Manh Anh Do , Lap Chan
IPC分类号： H01F5/00 , H01F27/28
CPC分类号： H01F27/2804 , H01F17/0013 , H01F27/006 , H01F2017/0073 , H01L2924/3011 , Y10T29/4902
摘要： Embodiments of the invention provide a transformer comprising: a first coil element having a transverse axis along a transverse direction, the first coil element having p turns where p is greater than or equal to 1; and a second coil element having a transverse axis generally parallel to the transverse axis of the first coil element, the second coil element having n turns, where n is greater than or equal to 5p; wherein the first and second coil elements are arranged to provide electromagnetic coupling between the coil elements along a portion of a length of the second coil element in both a transverse direction parallel to the transverse axes and a lateral direction, wherein the lateral direction is a direction normal to the transverse axes.
摘要翻译：本发明的实施例提供了一种变压器，包括：第一线圈元件，其沿着横向具有横向轴线，所述第一线圈元件具有p匝，其中p大于或等于1; 以及第二线圈元件，其具有大致平行于所述第一线圈元件的横向轴线的横轴，所述第二线圈元件具有n匝，其中n大于或等于5p; 其中所述第一和第二线圈元件布置成沿平行于横向轴线的横向方向和横向方向沿着所述第二线圈元件的长度的一部分在所述线圈元件之间提供电磁耦合，其中所述横向方向是垂直于横轴。

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