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    • 3. 发明授权
    • Integrated helix coil inductor on silicon
    • 在硅上集成螺旋线圈电感
    • US06803848B2
    • 2004-10-12
    • US10271006
    • 2002-10-15
    • Kiat Seng YeoHai Peng TanJian Guo MaManh Anh DoKok Wai Johnny Chew
    • Kiat Seng YeoHai Peng TanJian Guo MaManh Anh DoKok Wai Johnny Chew
    • H01F500
    • H01L28/10H01L27/08
    • A new structure and method is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of a helix coil design having upper level and lower level conductors further having an axis whereby the axis of the helix coil of the inductor is parallel to the plane of the underlying substrate. Under the first embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is uniform. Under the second embodiment of the invention the height of the helix coil of the inductor of the invention is uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil. Under the third embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is non-uniform. Under the fourth embodiment of the invention the height of the helix coil of the inductor of the invention is non-uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil.
    • 提供了一种新的结构和方法,用于在硅半导体衬底的表面上形成电感器。 电感器具有螺旋线圈设计,其具有上层和下层导体,其还具有轴线,由此电感器的螺旋线圈的轴线平行于下层衬底的平面。 在本发明的第一实施例中,在硅衬底的表面上产生的螺旋线圈的高度是均匀的。 在本发明的第二实施例中,本发明的电感器的螺旋线圈的高度是均匀的,而铁磁芯插入在螺旋线圈的上层和下层导体之间。 在本发明的第三实施例中,在硅衬底的表面上产生的螺旋线圈的高度是不均匀的。 在本发明的第四实施例中,本发明的电感器的螺旋线圈的高度是不均匀的,而铁磁芯被插入螺旋线圈的上层和下层导体之间。
    • 8. 发明授权
    • Integrated transformer and method of fabrication thereof
    • 集成变压器及其制造方法
    • US07570144B2
    • 2009-08-04
    • US11750341
    • 2007-05-18
    • Chee Chong LimKok Wai ChewKiat Seng YeoSuh Fei LimManh Anh DoLap Chan
    • Chee Chong LimKok Wai ChewKiat Seng YeoSuh Fei LimManh Anh DoLap Chan
    • H01F5/00
    • H01F17/0006H01F17/0013H01F19/08H01F27/2804H01F41/041H01L23/5227H01L2924/0002H01L2924/3011Y10T29/4902H01L2924/00
    • An integrated transformer structure includes a first coil element associated with a transverse axis, the first coil element having at least one turn. The first coil element includes a first portion provided on a first lateral level, and a second portion provided on a second lateral level. The first and second lateral levels being mutually spaced apart along said transverse axis. The first and second portions being displaced laterally from said axis by different respective distances. At least one crossover portion of the first coil element, in which the first coil element being configured to provide a conducting path through at least a portion of the first portion of the first coil element to the crossover portion, through the crossover portion and subsequently through at least a portion of the second portion of the first coil element, in which any change of flow direction along said path is less than 90° in a lateral direction.
    • 集成变压器结构包括与横向轴线相关联的第一线圈元件,第一线圈元件具有至少一匝。 第一线圈元件包括设置在第一横向水平面上的第一部分和设置在第二横向水平面上的第二部分。 第一和第二横向水平面沿着所述横向轴线相互间隔开。 第一和第二部分从所述轴线横向移位不同的相应距离。 所述第一线圈元件的至少一个交叉部分,其中所述第一线圈元件被配置为提供通过所述交叉部分穿过所述交叉部分的所述第一线圈元件的所述第一部分的至少一部分的导电路径,并且随后通过 第一线圈元件的第二部分的至少一部分,其中沿着所述路径的流动方向的任何变化在横向方向上小于90°。