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1. 发明授权

US06800533B1 Integrated vertical spiral inductor on semiconductor material 有权
标题翻译：半导体材料上集成垂直螺旋电感
公开(公告)号：US06800533B1
公开(公告)日：2004-10-05
申请号：US09519427
申请日：2000-03-06
申请人： Kiat Seng Yeo , Hai Peng Tan , Jian Guo Ma , Manh Anh Do , Kok Wai Johnny Chew
发明人： Kiat Seng Yeo , Hai Peng Tan , Jian Guo Ma , Manh Anh Do , Kok Wai Johnny Chew
IPC分类号： H01L2120
CPC分类号： H01L23/645 , H01F17/0013 , H01F41/041 , H01L23/5227 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A new structure is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of spiral design and perpendicular to the plane of the underlying substrate. Conductor line width can be selected as narrow or wide, ferromagnetic material can be used to fill the spaces between the conductors of the spiral inductor. The spiral inductor of the invention can further by used in series or in series with conventional horizontal inductors.
摘要翻译：提供了一种新的结构，用于在硅半导体衬底的表面上产生电感器。电感器具有螺旋设计并且垂直于下面的衬底的平面。导体线宽可以选择为窄或宽，铁磁材料可用于填充螺旋电感器导体之间的空间。本发明的螺旋电感器还可以与传统的水平电感器串联或串联使用。

2. 发明申请

US20070007623A1 Method to fabricate horizontal air columns underneath metal inductor 有权
标题翻译：在金属电感器下制造水平空气柱的方法
公开(公告)号：US20070007623A1
公开(公告)日：2007-01-11
申请号：US11519103
申请日：2006-09-11
申请人： Lap Chan , Kok Wai Johnny Chew , Cher Liang Cha , Chee Tee Chua
发明人： Lap Chan , Kok Wai Johnny Chew , Cher Liang Cha , Chee Tee Chua
IPC分类号： H01L29/00
CPC分类号： H01L21/76834 , H01F3/14 , H01F17/0006 , H01F27/34 , H01F41/041 , H01F41/045 , H01L21/764 , H01L21/7682 , H01L23/5227 , H01L23/53295 , H01L27/08 , H01L28/10 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A new method is provided for creating an inductor on the surface of a silicon substrate. The invention provides overlying layers of oxide fins beneath a metal inductor. The oxide fins provide the stability support for the overlying metal inductor while also allowing horizontal air columns to simultaneously exist underneath the inductor. Overlying layers of air cavities that are spatially inserted between the created overlying layers of oxide fins can be created under the invention by repetitive application of the mask used. The presence of the air wells on the surface of the substrate significantly reduces parasitic capacitances and series resistance of the inductor associated with the substrate.
摘要翻译：提供了一种在硅衬底的表面上形成电感器的新方法。本发明提供金属电感器下面的氧化物鳍片的覆盖层。氧化物鳍片为上覆的金属电感器提供了稳定的支持，同时也允许水平空气柱同时存在于电感器下面。通过重复施用所使用的掩模，可以在本发明的基础上产生空间上插入在所产生的氧化物翅片的覆盖层之间的空腔的覆盖层。衬底表面上的空穴的存在显着降低了与衬底相关联的电感器的寄生电容和串联电阻。

3. 发明授权

US07023315B2 High performance RF inductors and transformers using bonding technique 失效
公开(公告)号：US07023315B2
公开(公告)日：2006-04-04
申请号：US10448882
申请日：2003-05-29
申请人： Kiat Seng Yeo , Hai Peng Tan , Jianguo Ma , Manh Anh Do , Kok Wai Johnny Chew
发明人： Kiat Seng Yeo , Hai Peng Tan , Jianguo Ma , Manh Anh Do , Kok Wai Johnny Chew
IPC分类号： H01F5/00
CPC分类号： H01L24/48 , H01F17/0006 , H01F17/0033 , H01F41/041 , H01L23/5227 , H01L23/645 , H01L24/45 , H01L24/49 , H01L2223/6611 , H01L2224/05554 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48472 , H01L2224/48599 , H01L2224/4911 , H01L2224/49175 , H01L2224/49176 , H01L2224/49431 , H01L2224/85207 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01079 , H01L2924/10329 , H01L2924/14 , H01L2924/1423 , H01L2924/15787 , H01L2924/19041 , H01L2924/19042 , H01L2924/19104 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2224/85399 , H01L2224/05599
摘要： A method of fabricating an inductor using bonding techniques in the manufacture of integrated circuits is described. Bonding pads are provided over a semiconductor substrate. Input/output connections are made to at least two of the bonding pads. A plurality of wire bond loops are made between each two of the bonding pads wherein the plurality of wire bond loops forms the inductor.

4. 发明授权

US06535098B1 Integrated helix coil inductor on silicon 有权
公开(公告)号：US06535098B1
公开(公告)日：2003-03-18
申请号：US09519866
申请日：2000-03-06
申请人： Kiat Seng Yeo , Hai Peng Tan , Jian Guo Ma , Manh Anh Do , Kok Wai Johnny Chew
发明人： Kiat Seng Yeo , Hai Peng Tan , Jian Guo Ma , Manh Anh Do , Kok Wai Johnny Chew
IPC分类号： H01F500
CPC分类号： H01L28/10 , H01L27/08
摘要： A new structure and method is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of a helix coil design having upper level and lower level conductors further having an axis whereby the axis of the helix coil of the inductor is parallel to the plane of the underlying substrate. Under the first embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is uniform. Under the second embodiment of the invention the height of the helix coil of the inductor of the invention is uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil. Under the third embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is non-uniform. Under the fourth embodiment of the invention the height of the helix coil of the inductor of the invention is non-uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil.

5. 发明授权

US6140197A Method of making spiral-type RF inductors having a high quality factor (Q) 有权
标题翻译：制造具有高品质因数（Q）的螺旋型RF电感器的方法
公开(公告)号：US6140197A
公开(公告)日：2000-10-31
申请号：US385525
申请日：1999-08-30
申请人： Shau-Fu Sanford Chu , Kok Wai Johnny Chew , Chee Tee Chua , Cher Liang Cha
发明人： Shau-Fu Sanford Chu , Kok Wai Johnny Chew , Chee Tee Chua , Cher Liang Cha
IPC分类号： H01L21/02 , H01L27/08 , H01L21/20
CPC分类号： H01L28/10 , H01L27/08
摘要： A new method of fabricating an inductor utilizing air as an underlying barrier in the manufacture of integrated circuits is described. A metal line is provided overlying a dielectric layer on a semiconductor substrate. An intermetal dielectric layer is deposited overlying the metal line and the dielectric layer. The intermetal dielectric layer is patterned whereby a plurality of openings are made through the intermetal dielectric layer to the semiconductor substrate. Thereafter, an oxide layer is deposited overlying the intermetal dielectric layer and capping the plurality of openings thereby forming air gaps within the intermetal dielectric layer. A metal plug is formed through the oxide layer and the intermetal dielectric layer to the metal line. A metal layer is deposited overlying the oxide layer and patterned to form an inductor wherein a portion of the inductor contacts the metal line through the metal plug to complete formation of an inductor utilizing air as an underlying barrier in the fabrication of an integrated circuit.
摘要翻译：描述了在制造集成电路中制造利用空气作为下层屏障的电感器的新方法。提供了覆盖半导体衬底上的电介质层的金属线。覆盖在金属线和电介质层上的金属间电介质层。金属间电介质层被图案化，由此通过金属间电介质层制造多个开口到半导体衬底。此后，将氧化物层沉积在金属间电介质层上并覆盖多个开口，从而在金属间电介质层内形成气隙。通过氧化物层和金属间电介质层形成金属插塞到金属线。将金属层沉积在氧化物层上并被图案化以形成电感器，其中电感器的一部分通过金属插塞接触金属线，以在集成电路的制造中利用空气作为潜在的阻挡层来形成电感器。

6. 发明授权

US06611188B2 Integrated vertical spiral inductor on semiconductor material 有权
标题翻译：半导体材料上集成垂直螺旋电感
公开(公告)号：US06611188B2
公开(公告)日：2003-08-26
申请号：US10233771
申请日：2002-09-03
申请人： Kiat Seng Yeo , Hai Yeng Tan , Jiang Guo Ma , Manh Anh Do , Kok Wai Johnny Chew
发明人： Kiat Seng Yeo , Hai Yeng Tan , Jiang Guo Ma , Manh Anh Do , Kok Wai Johnny Chew
IPC分类号： H01F2729
CPC分类号： H01L23/645 , H01F17/0013 , H01F41/041 , H01L23/5227 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A new structure is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of spiral design and perpendicular to the plane of the underlying substrate. Conductor line width can be selected as narrow or wide, ferromagnetic material can be used to fill the spaces between the conductors of the spiral inductor. The spiral inductor of the invention can further by used in series or in series with conventional horizontal inductors.
摘要翻译：提供了一种新的结构，用于在硅半导体衬底的表面上产生电感器。电感器具有螺旋设计并且垂直于下面的衬底的平面。导体线宽可以选择为窄或宽，铁磁材料可用于填充螺旋电感器导体之间的空间。本发明的螺旋电感器还可以与传统的水平电感器串联或串联使用。

7. 发明授权

US07573081B2 Method to fabricate horizontal air columns underneath metal inductor 有权
标题翻译：在金属电感器下制造水平空气柱的方法
公开(公告)号：US07573081B2
公开(公告)日：2009-08-11
申请号：US11519103
申请日：2006-09-11
申请人： Lap Chan , Kok Wai Johnny Chew , Cher Liang Cha , Chee Tee Chua
发明人： Lap Chan , Kok Wai Johnny Chew , Cher Liang Cha , Chee Tee Chua
IPC分类号： H01L29/78
CPC分类号： H01L21/76834 , H01F3/14 , H01F17/0006 , H01F27/34 , H01F41/041 , H01F41/045 , H01L21/764 , H01L21/7682 , H01L23/5227 , H01L23/53295 , H01L27/08 , H01L28/10 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A new method is provided for creating an inductor on the surface of a silicon substrate. The invention provides overlying layers of oxide fins beneath a metal inductor. The oxide fins provide the stability support for the overlying metal inductor while also allowing horizontal air columns to simultaneously exist underneath the inductor. Overlying layers of air cavities that are spatially inserted between the created overlying layers of oxide fins can be created under the invention by repetitive application of the mask used. The presence of the air wells on the surface of the substrate significantly reduces parasitic capacitances and series resistance of the inductor associated with the substrate.
摘要翻译：提供了一种在硅衬底的表面上形成电感器的新方法。本发明提供金属电感器下面的氧化物鳍片的覆盖层。氧化物鳍片为上覆的金属电感器提供了稳定的支持，同时也允许水平空气柱同时存在于电感器下面。通过重复施用所使用的掩模，可以在本发明的基础上产生空间上插入在所产生的氧化物翅片的覆盖层之间的空腔的覆盖层。衬底表面上的空穴的存在显着降低了与衬底相关联的电感器的寄生电容和串联电阻。

8. 发明授权

US07105420B1 Method to fabricate horizontal air columns underneath metal inductor 有权
公开(公告)号：US07105420B1
公开(公告)日：2006-09-12
申请号：US09413177
申请日：1999-10-07
申请人： Lap Chan , Kok Wai Johnny Chew , Cher Liang Cha , Chee Tee Chua
发明人： Lap Chan , Kok Wai Johnny Chew , Cher Liang Cha , Chee Tee Chua
IPC分类号： H01L21/76
CPC分类号： H01L21/76834 , H01F3/14 , H01F17/0006 , H01F27/34 , H01F41/041 , H01F41/045 , H01L21/764 , H01L21/7682 , H01L23/5227 , H01L23/53295 , H01L27/08 , H01L28/10 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A new method is provided for creating an inductor on the surface of a silicon substrate. The invention provides overlying layers of oxide fins beneath a metal inductor. The oxide fins provide the stability support for the overlying metal inductor while also allowing horizontal air columns to simultaneously exist underneath the inductor. Overlying layers of air cavities that are spatially inserted between the created overlying layers of oxide fins can be created under the invention by repetitive application of the mask used. The presence of the air wells on the surface of the substrate significantly reduces parasitic capacitances and series resistance of the inductor associated with the substrate.

9. 发明授权

US06803848B2 Integrated helix coil inductor on silicon 有权
标题翻译：在硅上集成螺旋线圈电感
公开(公告)号：US06803848B2
公开(公告)日：2004-10-12
申请号：US10271006
申请日：2002-10-15
申请人： Kiat Seng Yeo , Hai Peng Tan , Jian Guo Ma , Manh Anh Do , Kok Wai Johnny Chew
发明人： Kiat Seng Yeo , Hai Peng Tan , Jian Guo Ma , Manh Anh Do , Kok Wai Johnny Chew
IPC分类号： H01F500
CPC分类号： H01L28/10 , H01L27/08
摘要： A new structure and method is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of a helix coil design having upper level and lower level conductors further having an axis whereby the axis of the helix coil of the inductor is parallel to the plane of the underlying substrate. Under the first embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is uniform. Under the second embodiment of the invention the height of the helix coil of the inductor of the invention is uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil. Under the third embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is non-uniform. Under the fourth embodiment of the invention the height of the helix coil of the inductor of the invention is non-uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil.
摘要翻译：提供了一种新的结构和方法，用于在硅半导体衬底的表面上形成电感器。电感器具有螺旋线圈设计，其具有上层和下层导体，其还具有轴线，由此电感器的螺旋线圈的轴线平行于下层衬底的平面。在本发明的第一实施例中，在硅衬底的表面上产生的螺旋线圈的高度是均匀的。在本发明的第二实施例中，本发明的电感器的螺旋线圈的高度是均匀的，而铁磁芯插入在螺旋线圈的上层和下层导体之间。在本发明的第三实施例中，在硅衬底的表面上产生的螺旋线圈的高度是不均匀的。在本发明的第四实施例中，本发明的电感器的螺旋线圈的高度是不均匀的，而铁磁芯被插入螺旋线圈的上层和下层导体之间。

10. 发明授权

US06586309B1 High performance RF inductors and transformers using bonding technique 有权
公开(公告)号：US06586309B1
公开(公告)日：2003-07-01
申请号：US09556423
申请日：2000-04-24
申请人： Kiat Seng Yeo , Hai Peng Tan , Jianguo Ma , Manh Anh Do , Kok Wai Johnny Chew
发明人： Kiat Seng Yeo , Hai Peng Tan , Jianguo Ma , Manh Anh Do , Kok Wai Johnny Chew
IPC分类号： H01L2120
CPC分类号： H01L24/48 , H01F17/0006 , H01F17/0033 , H01F41/041 , H01L23/5227 , H01L23/645 , H01L24/45 , H01L24/49 , H01L2223/6611 , H01L2224/05554 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48472 , H01L2224/48599 , H01L2224/4911 , H01L2224/49175 , H01L2224/49176 , H01L2224/49431 , H01L2224/85207 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01079 , H01L2924/10329 , H01L2924/14 , H01L2924/1423 , H01L2924/15787 , H01L2924/19041 , H01L2924/19042 , H01L2924/19104 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2224/85399 , H01L2224/05599
摘要： A method of fabricating an inductor using bonding techniques in the manufacture of integrated circuits is described. Bonding pads are provided over a semiconductor substrate. Input/output connections are made to at least two of the bonding pads. A plurality of wire bond loops are made between each two of the bonding pads wherein the plurality of wire bond loops forms the inductor.

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