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1. 发明申请

US20130335147A1 Power Amplifier and Linearization Techniques Using Active and Passive Devices 有权
标题翻译：使用主动和被动设备的功率放大器和线性化技术
公开(公告)号：US20130335147A1
公开(公告)日：2013-12-19
申请号：US13880550
申请日：2011-10-20
申请人： Kai Xue Ma , Jiangmin Gu , Yang Lu , Kiat Seng Yeo
发明人： Kai Xue Ma , Jiangmin Gu , Yang Lu , Kiat Seng Yeo
IPC分类号： H03F3/21
CPC分类号： H03F3/21 , H03F1/0261 , H03F1/32 , H03F1/3211 , H03F1/56 , H03F3/191 , H03F3/195 , H03F3/245 , H03F3/60 , H03F2200/18 , H03F2200/222 , H03F2200/387
摘要： Designs and techniques for improving the linearity of the power amplifiers, especially of the non-linear types, operated in microwave and millimeter-wave frequency using method through purposely designed active transistors or passive devices or both, are disclosed. The techniques use the manipulation of transistors' cut-off frequencies (fT) design, attached loaded linearization stub and characteristics of space attenuation of microwave signals individually or in combination of them. The disclosed techniques provide the advantages to compromise the performance among linearity, gain and power consumption in a wide range of power amplifier types, such as Class- AB, B, C, D, E and F in the different application scenarios.
摘要翻译：公开了通过专门设计的有源晶体管或无源器件或两者在微波和毫米波频率使用方法中操作的功率放大器，特别是非线性型功率放大器的线性度的设计和技术。这些技术使用晶体管的截止频率（fT）设计，附加的负载线性化短截线和微波信号的空间衰减特性单独或组合的操作。所公开的技术提供了在各种功率放大器类型（例如不同应用场合中的类AB，B，C，D，E和F）中的线性度，增益和功率消耗之间的性能损害的优点。

2. 发明授权

US08242872B2 Transformer with effective high turn ratio 有权
标题翻译：变压器有效高匝数比
公开(公告)号：US08242872B2
公开(公告)日：2012-08-14
申请号：US11779892
申请日：2007-07-19
申请人： Chee Chong Lim , Kok Wai Chew , Kiat Seng Yeo , Suh Fei Lim , Manh Anh Do , Lap Chan
发明人： Chee Chong Lim , Kok Wai Chew , Kiat Seng Yeo , Suh Fei Lim , Manh Anh Do , Lap Chan
IPC分类号： H01F5/00 , H01F27/28
CPC分类号： H01F27/2804 , H01F17/0013 , H01F27/006 , H01F2017/0073 , H01L2924/3011 , Y10T29/4902
摘要： Embodiments of the invention provide a transformer comprising: a first coil element having a transverse axis along a transverse direction, the first coil element having p turns where p is greater than or equal to 1; and a second coil element having a transverse axis generally parallel to the transverse axis of the first coil element, the second coil element having n turns, where n is greater than or equal to 5p; wherein the first and second coil elements are arranged to provide electromagnetic coupling between the coil elements along a portion of a length of the second coil element in both a transverse direction parallel to the transverse axes and a lateral direction, wherein the lateral direction is a direction normal to the transverse axes.
摘要翻译：本发明的实施例提供了一种变压器，包括：第一线圈元件，其沿着横向具有横向轴线，所述第一线圈元件具有p匝，其中p大于或等于1; 以及第二线圈元件，其具有大致平行于所述第一线圈元件的横向轴线的横轴，所述第二线圈元件具有n匝，其中n大于或等于5p; 其中所述第一和第二线圈元件布置成沿平行于横向轴线的横向方向和横向方向沿着所述第二线圈元件的长度的一部分在所述线圈元件之间提供电磁耦合，其中所述横向方向是垂直于横轴。

3. 发明授权

US07721414B2 Method of manufacturing 3-D spiral stacked inductor on semiconductor material 有权
标题翻译：在半导体材料上制造三维螺旋堆叠电感器的方法
公开(公告)号：US07721414B2
公开(公告)日：2010-05-25
申请号：US10962007
申请日：2004-10-08
申请人： Choon-Beng Sia , Kiat Seng Yeo , Shao-fu Sanford Chu , Cheng Yeow Ng , Kok Wai Chew , Wang Ling Goh
发明人： Choon-Beng Sia , Kiat Seng Yeo , Shao-fu Sanford Chu , Cheng Yeow Ng , Kok Wai Chew , Wang Ling Goh
IPC分类号： H01F7/06 , H01F3/00
CPC分类号： H01L28/10 , H01L27/08 , Y10T29/4902 , Y10T29/4906 , Y10T29/49073 , Y10T29/49165
摘要： A method of manufacturing a 3-D spiral stacked inductor is provided having a substrate with a plurality of turns in a plurality of levels wherein the number of levels increases from an inner turn to the outer turn of the inductor. First and second connecting portions are respectively connected to an inner turn and an outermost turn, and a dielectric material contains the first and second connecting portions and the plurality of turns over the substrate.
摘要翻译：提供了一种制造3-D螺旋堆叠电感器的方法，其具有多个电平的多个匝数的基板，其中电平的数量从电感器的内部匝数增加到外部匝数。第一连接部分和第二连接部分分别连接到内匝和最外匝，电介质材料包含基片上的第一和第二连接部分和多个匝。

4. 发明申请

US20080284552A1 INTEGRATED TRANSFORMER AND METHOD OF FABRICATION THEREOF 有权
标题翻译：一体化变压器及其制造方法
公开(公告)号：US20080284552A1
公开(公告)日：2008-11-20
申请号：US11750341
申请日：2007-05-18
申请人： Chee Chong Lim , Kok Wai Chew , Kiat Seng Yeo , Suh Fei Lim , Manh Anh Do , Lap Chan
发明人： Chee Chong Lim , Kok Wai Chew , Kiat Seng Yeo , Suh Fei Lim , Manh Anh Do , Lap Chan
IPC分类号： H01F5/00
CPC分类号： H01F17/0006 , H01F17/0013 , H01F19/08 , H01F27/2804 , H01F41/041 , H01L23/5227 , H01L2924/0002 , H01L2924/3011 , Y10T29/4902 , H01L2924/00
摘要： An integrated transformer structure includes a first coil element associated with a transverse axis, the first coil element having at least one turn. The first coil element includes a first portion provided on a first lateral level, and a second portion provided on a second lateral level. The first and second lateral levels being mutually spaced apart along said transverse axis. The first and second portions being displaced laterally from said axis by different respective distances. At least one crossover portion of the first coil element, in which the first coil element being configured to provide a conducting path through at least a portion of the first portion of the first coil element to the crossover portion, through the crossover portion and subsequently through at least a portion of the second portion of the first coil element, in which any change of flow direction along said path is less than 90° in a lateral direction.
摘要翻译：集成变压器结构包括与横向轴线相关联的第一线圈元件，第一线圈元件具有至少一匝。第一线圈元件包括设置在第一横向水平面上的第一部分和设置在第二横向水平面上的第二部分。第一和第二横向水平面沿着所述横向轴线相互间隔开。第一和第二部分从所述轴线横向移位不同的相应距离。所述第一线圈元件的至少一个交叉部分，其中所述第一线圈元件被配置为提供通过所述交叉部分穿过所述交叉部分的所述第一线圈元件的所述第一部分的至少一部分的导电路径，并且随后通过第一线圈元件的第二部分的至少一部分，其中沿着所述路径的流动方向的任何变化在横向方向上小于90°。

5. 发明授权

US06803848B2 Integrated helix coil inductor on silicon 有权
标题翻译：在硅上集成螺旋线圈电感
公开(公告)号：US06803848B2
公开(公告)日：2004-10-12
申请号：US10271006
申请日：2002-10-15
申请人： Kiat Seng Yeo , Hai Peng Tan , Jian Guo Ma , Manh Anh Do , Kok Wai Johnny Chew
发明人： Kiat Seng Yeo , Hai Peng Tan , Jian Guo Ma , Manh Anh Do , Kok Wai Johnny Chew
IPC分类号： H01F500
CPC分类号： H01L28/10 , H01L27/08
摘要： A new structure and method is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of a helix coil design having upper level and lower level conductors further having an axis whereby the axis of the helix coil of the inductor is parallel to the plane of the underlying substrate. Under the first embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is uniform. Under the second embodiment of the invention the height of the helix coil of the inductor of the invention is uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil. Under the third embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is non-uniform. Under the fourth embodiment of the invention the height of the helix coil of the inductor of the invention is non-uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil.
摘要翻译：提供了一种新的结构和方法，用于在硅半导体衬底的表面上形成电感器。电感器具有螺旋线圈设计，其具有上层和下层导体，其还具有轴线，由此电感器的螺旋线圈的轴线平行于下层衬底的平面。在本发明的第一实施例中，在硅衬底的表面上产生的螺旋线圈的高度是均匀的。在本发明的第二实施例中，本发明的电感器的螺旋线圈的高度是均匀的，而铁磁芯插入在螺旋线圈的上层和下层导体之间。在本发明的第三实施例中，在硅衬底的表面上产生的螺旋线圈的高度是不均匀的。在本发明的第四实施例中，本发明的电感器的螺旋线圈的高度是不均匀的，而铁磁芯被插入螺旋线圈的上层和下层导体之间。

6. 发明授权

US06650220B2 Parallel spiral stacked inductor on semiconductor material 有权
标题翻译：半导体材料上的平行螺旋堆叠电感
公开(公告)号：US06650220B2
公开(公告)日：2003-11-18
申请号：US10131334
申请日：2002-04-23
申请人： Choon-Beng Sia , Kiat Seng Yeo , Toe Naing Swe , Cheng Yeow Ng , Alex See
发明人： Choon-Beng Sia , Kiat Seng Yeo , Toe Naing Swe , Cheng Yeow Ng , Alex See
IPC分类号： H01F500
CPC分类号： H01L28/10 , H01F17/0013 , H01L23/5227 , H01L27/08 , H01L2924/0002 , Y10T29/4902 , H01L2924/00
摘要： A parallel spiral stacked inductor and manufacturing method therefore is provided. A substrate has a plurality of turns in a plurality of levels, the plurality of turns having a center proximate and a center distal ends. A first plurality of vias connecting the center proximate ends of the plurality of turns and a second plurality of vias connecting the center distal ends of the plurality of turns. A first connecting portion connects to the center proximate ends of the plurality of turns and a second connecting portion connecting to the center distal end of the plurality of turns. A dielectric material contains the inductor.
摘要翻译：因此，提供了一种并联螺旋堆叠电感器及其制造方法。衬底具有多个级的多个匝，多个匝具有中心邻近和中心远端。连接多个匝的中心近端的第一多个通孔和连接多个匝的中心远端的第二多个通孔。第一连接部分连接到多个匝的中心近端，以及连接到多个匝的中心远端的第二连接部分。电介质材料包含电感器。

7. 发明授权

US06586309B1 High performance RF inductors and transformers using bonding technique 有权
公开(公告)号：US06586309B1
公开(公告)日：2003-07-01
申请号：US09556423
申请日：2000-04-24
申请人： Kiat Seng Yeo , Hai Peng Tan , Jianguo Ma , Manh Anh Do , Kok Wai Johnny Chew
发明人： Kiat Seng Yeo , Hai Peng Tan , Jianguo Ma , Manh Anh Do , Kok Wai Johnny Chew
IPC分类号： H01L2120
CPC分类号： H01L24/48 , H01F17/0006 , H01F17/0033 , H01F41/041 , H01L23/5227 , H01L23/645 , H01L24/45 , H01L24/49 , H01L2223/6611 , H01L2224/05554 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48472 , H01L2224/48599 , H01L2224/4911 , H01L2224/49175 , H01L2224/49176 , H01L2224/49431 , H01L2224/85207 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01079 , H01L2924/10329 , H01L2924/14 , H01L2924/1423 , H01L2924/15787 , H01L2924/19041 , H01L2924/19042 , H01L2924/19104 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2224/85399 , H01L2224/05599
摘要： A method of fabricating an inductor using bonding techniques in the manufacture of integrated circuits is described. Bonding pads are provided over a semiconductor substrate. Input/output connections are made to at least two of the bonding pads. A plurality of wire bond loops are made between each two of the bonding pads wherein the plurality of wire bond loops forms the inductor.

8. 发明申请

US20120274367A1 Front-End Transceiver 有权
标题翻译：前端收发器
公开(公告)号：US20120274367A1
公开(公告)日：2012-11-01
申请号：US13391893
申请日：2010-08-24
申请人： Kiat Seng Yeo , Jian Guo Ma
发明人： Kiat Seng Yeo , Jian Guo Ma
IPC分类号： H03B19/00
CPC分类号： H04B1/28 , H03D7/163 , H03D7/166 , H04B15/04 , H04B2215/064
摘要： In an embodiment, a front-end transceiver may be provided. The front-end transceiver may include a receiver path, including a first receiver frequency converter configured to convert a received signal with a receiver frequency into a first receiver intermediate signal with a first receiver intermediate frequency; and a receiver direct conversion stage coupled to the first receiver frequency converter so as to receive the first receiver intermediate signal. The front-end transceiver may further include an oscillator signal generator respectively coupled to the first receiver frequency converter and to the receiver direct conversion stage so as to provide a first oscillator signal with a first oscillator frequency to the first receiver frequency converter and a first stabilizing signal with a first stabilizing frequency to the receiver direct conversion stage; wherein the oscillator signal generator may be configured so that the first oscillator frequency of the first oscillator signal may be selected such that any integer multiple of the first oscillator frequency of the first oscillator signal may be different from any integer multiple of the receiver frequency of the received signal. The front-end transceiver may also include a transmitter path.
摘要翻译：在一个实施例中，可以提供前端收发器。前端收发器可以包括接收器路径，包括被配置为将具有接收机频率的接收信号转换为具有第一接收机中频的第一接收机中间信号的第一接收机频率转换器; 以及接收器直接转换级，其耦合到所述第一接收机频率转换器，以便接收所述第一接收机中间信号。前端收发器还可以包括分别耦合到第一接收机频率转换器和接收机直接转换级的振荡器信号发生器，以便向第一接收机频率转换器提供具有第一振荡器频率的第一振荡器信号和第一稳定信号具有第一稳定频率到接收机直接转换级; 其中振荡器信号发生器可以被配置为使得可以选择第一振荡器信号的第一振荡器频率，使得第一振荡器信号的第一振荡器频率的任何整数倍可以不同于第一振荡器信号的接收机频率的任何整数倍接收信号。前端收发器还可以包括发射机路径。

9. 发明申请

US20090167466A1 TUNABLE HIGH QUALITY FACTOR INDUCTOR 有权
标题翻译：可靠的高品质因子电感
公开(公告)号：US20090167466A1
公开(公告)日：2009-07-02
申请号：US11967270
申请日：2007-12-31
申请人： Ping QIU , Chirn Chye BOON , Johnny Kok Wai CHEW , Kiat Seng YEO , Manh Anh DO , Lap CHAN , Suh Fei LIM
发明人： Ping QIU , Chirn Chye BOON , Johnny Kok Wai CHEW , Kiat Seng YEO , Manh Anh DO , Lap CHAN , Suh Fei LIM
IPC分类号： H03J3/00 , H01F27/06
CPC分类号： H03J3/20 , H01F17/0006 , H01F2017/0073 , H03H11/48
摘要： An inductor circuit with high quality (Q) factor includes a primary inductor and a compensation sub-circuit. The compensation sub-circuit is electrically isolated from the primary inductor. The compensation sub-circuit is magnetically coupled with the primary inductor to compensate the loss in the primary inductor.
摘要翻译：具有高质量（Q）因子的电感器电路包括初级电感器和补偿子电路。补偿子电路与主电感器电隔离。补偿子电路与初级电感器磁耦合，以补偿初级电感器的损耗。

10. 发明授权

US06800533B1 Integrated vertical spiral inductor on semiconductor material 有权
标题翻译：半导体材料上集成垂直螺旋电感
公开(公告)号：US06800533B1
公开(公告)日：2004-10-05
申请号：US09519427
申请日：2000-03-06
申请人： Kiat Seng Yeo , Hai Peng Tan , Jian Guo Ma , Manh Anh Do , Kok Wai Johnny Chew
发明人： Kiat Seng Yeo , Hai Peng Tan , Jian Guo Ma , Manh Anh Do , Kok Wai Johnny Chew
IPC分类号： H01L2120
CPC分类号： H01L23/645 , H01F17/0013 , H01F41/041 , H01L23/5227 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A new structure is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of spiral design and perpendicular to the plane of the underlying substrate. Conductor line width can be selected as narrow or wide, ferromagnetic material can be used to fill the spaces between the conductors of the spiral inductor. The spiral inductor of the invention can further by used in series or in series with conventional horizontal inductors.
摘要翻译：提供了一种新的结构，用于在硅半导体衬底的表面上产生电感器。电感器具有螺旋设计并且垂直于下面的衬底的平面。导体线宽可以选择为窄或宽，铁磁材料可用于填充螺旋电感器导体之间的空间。本发明的螺旋电感器还可以与传统的水平电感器串联或串联使用。

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