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1. 发明申请

US20120274367A1 Front-End Transceiver 有权
标题翻译：前端收发器
公开(公告)号：US20120274367A1
公开(公告)日：2012-11-01
申请号：US13391893
申请日：2010-08-24
申请人： Kiat Seng Yeo , Jian Guo Ma
发明人： Kiat Seng Yeo , Jian Guo Ma
IPC分类号： H03B19/00
CPC分类号： H04B1/28 , H03D7/163 , H03D7/166 , H04B15/04 , H04B2215/064
摘要： In an embodiment, a front-end transceiver may be provided. The front-end transceiver may include a receiver path, including a first receiver frequency converter configured to convert a received signal with a receiver frequency into a first receiver intermediate signal with a first receiver intermediate frequency; and a receiver direct conversion stage coupled to the first receiver frequency converter so as to receive the first receiver intermediate signal. The front-end transceiver may further include an oscillator signal generator respectively coupled to the first receiver frequency converter and to the receiver direct conversion stage so as to provide a first oscillator signal with a first oscillator frequency to the first receiver frequency converter and a first stabilizing signal with a first stabilizing frequency to the receiver direct conversion stage; wherein the oscillator signal generator may be configured so that the first oscillator frequency of the first oscillator signal may be selected such that any integer multiple of the first oscillator frequency of the first oscillator signal may be different from any integer multiple of the receiver frequency of the received signal. The front-end transceiver may also include a transmitter path.
摘要翻译：在一个实施例中，可以提供前端收发器。前端收发器可以包括接收器路径，包括被配置为将具有接收机频率的接收信号转换为具有第一接收机中频的第一接收机中间信号的第一接收机频率转换器; 以及接收器直接转换级，其耦合到所述第一接收机频率转换器，以便接收所述第一接收机中间信号。前端收发器还可以包括分别耦合到第一接收机频率转换器和接收机直接转换级的振荡器信号发生器，以便向第一接收机频率转换器提供具有第一振荡器频率的第一振荡器信号和第一稳定信号具有第一稳定频率到接收机直接转换级; 其中振荡器信号发生器可以被配置为使得可以选择第一振荡器信号的第一振荡器频率，使得第一振荡器信号的第一振荡器频率的任何整数倍可以不同于第一振荡器信号的接收机频率的任何整数倍接收信号。前端收发器还可以包括发射机路径。

2. 发明授权

US06800533B1 Integrated vertical spiral inductor on semiconductor material 有权
标题翻译：半导体材料上集成垂直螺旋电感
公开(公告)号：US06800533B1
公开(公告)日：2004-10-05
申请号：US09519427
申请日：2000-03-06
申请人： Kiat Seng Yeo , Hai Peng Tan , Jian Guo Ma , Manh Anh Do , Kok Wai Johnny Chew
发明人： Kiat Seng Yeo , Hai Peng Tan , Jian Guo Ma , Manh Anh Do , Kok Wai Johnny Chew
IPC分类号： H01L2120
CPC分类号： H01L23/645 , H01F17/0013 , H01F41/041 , H01L23/5227 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A new structure is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of spiral design and perpendicular to the plane of the underlying substrate. Conductor line width can be selected as narrow or wide, ferromagnetic material can be used to fill the spaces between the conductors of the spiral inductor. The spiral inductor of the invention can further by used in series or in series with conventional horizontal inductors.
摘要翻译：提供了一种新的结构，用于在硅半导体衬底的表面上产生电感器。电感器具有螺旋设计并且垂直于下面的衬底的平面。导体线宽可以选择为窄或宽，铁磁材料可用于填充螺旋电感器导体之间的空间。本发明的螺旋电感器还可以与传统的水平电感器串联或串联使用。

3. 发明授权

US06803848B2 Integrated helix coil inductor on silicon 有权
标题翻译：在硅上集成螺旋线圈电感
公开(公告)号：US06803848B2
公开(公告)日：2004-10-12
申请号：US10271006
申请日：2002-10-15
申请人： Kiat Seng Yeo , Hai Peng Tan , Jian Guo Ma , Manh Anh Do , Kok Wai Johnny Chew
发明人： Kiat Seng Yeo , Hai Peng Tan , Jian Guo Ma , Manh Anh Do , Kok Wai Johnny Chew
IPC分类号： H01F500
CPC分类号： H01L28/10 , H01L27/08
摘要： A new structure and method is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of a helix coil design having upper level and lower level conductors further having an axis whereby the axis of the helix coil of the inductor is parallel to the plane of the underlying substrate. Under the first embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is uniform. Under the second embodiment of the invention the height of the helix coil of the inductor of the invention is uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil. Under the third embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is non-uniform. Under the fourth embodiment of the invention the height of the helix coil of the inductor of the invention is non-uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil.
摘要翻译：提供了一种新的结构和方法，用于在硅半导体衬底的表面上形成电感器。电感器具有螺旋线圈设计，其具有上层和下层导体，其还具有轴线，由此电感器的螺旋线圈的轴线平行于下层衬底的平面。在本发明的第一实施例中，在硅衬底的表面上产生的螺旋线圈的高度是均匀的。在本发明的第二实施例中，本发明的电感器的螺旋线圈的高度是均匀的，而铁磁芯插入在螺旋线圈的上层和下层导体之间。在本发明的第三实施例中，在硅衬底的表面上产生的螺旋线圈的高度是不均匀的。在本发明的第四实施例中，本发明的电感器的螺旋线圈的高度是不均匀的，而铁磁芯被插入螺旋线圈的上层和下层导体之间。

4. 发明授权

US06292060B1 Technique to generate negative conductance in CMOS tuned cascode RF amplifiers 失效
标题翻译：在CMOS调谐共源共RF放大器中产生负电导的技术
公开(公告)号：US06292060B1
公开(公告)日：2001-09-18
申请号：US09395288
申请日：1999-09-13
申请人： Kiat-Seng Yeo , Kok Lim Chan , Manh Anh Do , Jian Guo Ma , Johnny Kok Wai Chew
发明人： Kiat-Seng Yeo , Kok Lim Chan , Manh Anh Do , Jian Guo Ma , Johnny Kok Wai Chew
IPC分类号： H03F3191
CPC分类号： H03F1/56 , H03F1/223 , H03F2200/294 , H03F2200/369 , H03F2200/372
摘要： In this invention a single additional capacitor is added to a tuned cascode LNA which boosts the circuit Q and the gain of the amplifier. The added capacitor creates a negative real part of the impedance which when combined with the impedance of the LC tank circuit improves both the Q and the gain of the amplifier. The capacitor does not dissipate any power, and being a passive device the capacitor does not add additional noise to the circuit. With an improved gain there is a much improved signal to noise ratio. The higher Q allows the amplifier to provide some additional bandpass and reduce image reduction requirements in subsequent amplifier stages.
摘要翻译：在本发明中，将单个附加电容器添加到调谐共源共栅LNA，其升高电路Q和放大器的增益。增加的电容产生阻抗的负实部，当与LC谐振电路的阻抗相结合时，可以提高放大器的Q和增益。电容器不会耗散任何电源，而作为无源器件，电容器不会对电路增加额外的噪声。随着改进的增益，信噪比有了很大改善。较高的Q允许放大器提供一些额外的带通，并降低后续放大器级中的图像降低要求。

5. 发明授权

US09083437B2 Front-end transceiver 有权
标题翻译：前端收发器
公开(公告)号：US09083437B2
公开(公告)日：2015-07-14
申请号：US13391893
申请日：2010-08-24
申请人： Kiat Seng Yeo , Jian Guo Ma
发明人： Kiat Seng Yeo , Jian Guo Ma
IPC分类号： H04B1/38 , H04B1/28 , H03D7/16 , H04B15/04
CPC分类号： H04B1/28 , H03D7/163 , H03D7/166 , H04B15/04 , H04B2215/064
摘要： In an embodiment, a front-end transceiver may be provided. The front-end transceiver may include a receiver path, including a first receiver frequency converter configured to convert a received signal with a receiver frequency into a first receiver intermediate signal with a first receiver intermediate frequency; and a receiver direct conversion stage coupled to the first receiver frequency converter so as to receive the first receiver intermediate signal. The front-end transceiver may further include an oscillator signal generator respectively coupled to the first receiver frequency converter and to the receiver direct conversion stage so as to provide a first oscillator signal with a first oscillator frequency to the first receiver frequency converter and a first stabilizing signal with a first stabilizing frequency to the receiver direct conversion stage; wherein the oscillator signal generator may be configured so that the first oscillator frequency of the first oscillator signal may be selected such that any integer multiple of the first oscillator frequency of the first oscillator signal may be different from any integer multiple of the receiver frequency of the received signal. The front-end transceiver may also include a transmitter path.
摘要翻译：在一个实施例中，可以提供前端收发器。前端收发器可以包括接收器路径，包括被配置为将具有接收机频率的接收信号转换为具有第一接收机中频的第一接收机中间信号的第一接收机频率转换器; 以及接收器直接转换级，其耦合到所述第一接收机频率转换器，以便接收所述第一接收机中间信号。前端收发器还可以包括分别耦合到第一接收机频率转换器和接收机直接转换级的振荡器信号发生器，以便向第一接收机频率转换器提供具有第一振荡器频率的第一振荡器信号和第一稳定信号具有第一稳定频率到接收机直接转换级; 其中振荡器信号发生器可以被配置为使得可以选择第一振荡器信号的第一振荡器频率，使得第一振荡器信号的第一振荡器频率的任何整数倍可以不同于第一振荡器信号的接收机频率的任何整数倍接收信号。前端收发器还可以包括发射机路径。

6. 发明授权

US06535098B1 Integrated helix coil inductor on silicon 有权
公开(公告)号：US06535098B1
公开(公告)日：2003-03-18
申请号：US09519866
申请日：2000-03-06
申请人： Kiat Seng Yeo , Hai Peng Tan , Jian Guo Ma , Manh Anh Do , Kok Wai Johnny Chew
发明人： Kiat Seng Yeo , Hai Peng Tan , Jian Guo Ma , Manh Anh Do , Kok Wai Johnny Chew
IPC分类号： H01F500
CPC分类号： H01L28/10 , H01L27/08
摘要： A new structure and method is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of a helix coil design having upper level and lower level conductors further having an axis whereby the axis of the helix coil of the inductor is parallel to the plane of the underlying substrate. Under the first embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is uniform. Under the second embodiment of the invention the height of the helix coil of the inductor of the invention is uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil. Under the third embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is non-uniform. Under the fourth embodiment of the invention the height of the helix coil of the inductor of the invention is non-uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil.

7. 发明授权

US09373876B2 Multiple-mode filter for radio frequency integrated circuits 有权
标题翻译：射频集成电路用多模滤波器
公开(公告)号：US09373876B2
公开(公告)日：2016-06-21
申请号：US13881573
申请日：2011-10-27
申请人： Kai Xue Ma , Kok Meng Lim , Kiat Seng Yeo , Jian-guo Ma
发明人： Kai Xue Ma , Kok Meng Lim , Kiat Seng Yeo , Jian-guo Ma
IPC分类号： H01P1/205 , H01P1/203 , H04B3/21
CPC分类号： H01P1/203 , H01P1/20327 , H01P1/20336 , H01P1/20363 , H04B3/21
摘要： A fully integrated silicon-based bandpass filter which lends itself to applications in the gigahertz region is disclosed. The bandpass filter is fabricated on an integrated circuit and operates as a microwave/millimeter-wave filtering circuit. In accordance with one aspect, the bandpass filter includes a first set and a second set of filter coupled elements, a three-port “T” transmission line junction and a perturbing element. The three-port “T” transmission line junction has a first port coupled to a first end of a first one of the first set of filter coupled elements and a second port coupled to a first end of a first one of the second set of filter coupled elements. The perturbing element is coupled to a third port of the three-port “T” transmission line junction. A second one of the first set of filter coupled elements includes an input transmission line and has a first end thereof coupled to an input port and an opposite end thereof having an open end. A second one of the second set of filter coupled elements includes an output transmission line and has a first end thereof coupled to an output port and an opposite end thereof having an open end.
摘要翻译：公开了一种完全集成的硅基带通滤波器，适用于千兆赫兹区域的应用。带通滤波器在集成电路上制造，并作为微波/毫米波滤波电路工作。根据一个方面，带通滤波器包括第一组和第二组滤波器耦合元件，三端口“T”传输线结和扰动元件。三端口“T”传输线路连接点具有耦合到第一组滤波器耦合元件中的第一端的第一端的第一端口和耦合到第二组滤波器的第一端的第一端的第二端口耦合元素。扰动元件耦合到三端口“T”传输线路结的第三端口。第一组滤波器耦合元件中的第二组件包括输入传输线，并且其第一端耦合到具有开口端的输入端口和相对端。第二组滤波器耦合元件中的第二组件包括输出传输线，并且其第一端耦合到输出端口，并且其相对端具有开口端。

8. 发明申请

US20140035703A1 Multiple-Mode Filter for Radio Frequency Integrated Circuits 有权
标题翻译：射频集成电路多模滤波器
公开(公告)号：US20140035703A1
公开(公告)日：2014-02-06
申请号：US13881573
申请日：2011-10-27
申请人： Kai Xue Ma , Kok Meng Lim , Kiat Seng Yeo , Jian-guo Ma
发明人： Kai Xue Ma , Kok Meng Lim , Kiat Seng Yeo , Jian-guo Ma
IPC分类号： H01P1/203
CPC分类号： H01P1/203 , H01P1/20327 , H01P1/20336 , H01P1/20363 , H04B3/21
摘要： A fully integrated silicon-based bandpass filter which lends itself to applications in the gigahertz region is disclosed. The bandpass filter is fabricated on an integrated circuit and operates as a microwave/millimeter-wave filtering circuit. In accordance with one aspect, the bandpass filter includes a first set and a second set of filter coupled elements, a three-port “T” transmission line junction and a perturbing element. The three-port “T” transmission line junction has a first port coupled to a first end of a first one of the first set of filter coupled elements and a second port coupled to a first end of a first one of the second set of filter coupled elements. The perturbing element is coupled to a third port of the three-port “T” transmission line junction. A second one of the first set of filter coupled elements includes an input transmission line and has a first end thereof coupled to an input port and an opposite end thereof having an open end. A second one of the second set of filter coupled elements includes an output transmission line and has a first end thereof coupled to an output port and an opposite end thereof having an open end.
摘要翻译：公开了一种完全集成的硅基带通滤波器，适用于千兆赫兹区域的应用。带通滤波器在集成电路上制造，并作为微波/毫米波滤波电路工作。根据一个方面，带通滤波器包括第一组和第二组滤波器耦合元件，三端口“T”传输线结和扰动元件。三端口“T”传输线路连接点具有耦合到第一组滤波器耦合元件中的第一端的第一端的第一端口和耦合到第二组滤波器的第一端的第一端的第二端口耦合元素。扰动元件耦合到三端口“T”传输线路结的第三端口。第一组滤波器耦合元件中的第二组件包括输入传输线，并且其第一端耦合到具有开口端的输入端口和相对端。第二组滤波器耦合元件中的第二组件包括输出传输线，并且其第一端耦合到输出端口，并且其相对端具有开口端。

9. 发明授权

US06521939B1 High performance integrated varactor on silicon 有权
标题翻译：硅片上高性能集成变容二极管
公开(公告)号：US06521939B1
公开(公告)日：2003-02-18
申请号：US09672764
申请日：2000-09-29
申请人： Kiat-Seng Yeo , Chun Qi Geng , Kok-Wai Chew , Manh-Anh Do , Jian Guo Ma
发明人： Kiat-Seng Yeo , Chun Qi Geng , Kok-Wai Chew , Manh-Anh Do , Jian Guo Ma
IPC分类号： H01L27108
CPC分类号： H01L29/94 , H01L27/0808 , H01L29/66181
摘要： A new MOS varactor device is described. A bottom electrode comprises a plurality of diffusion junctions in a semiconductor substrate. The semiconductor substrate may be n-type or p-type. The diffusion junctions are arranged in a two-dimensional array. The diffusion junction may be either n-type or p-type. The diffusion junctions may be contained in a p-well or an n-well. A dielectric layer overlies the semiconductor substrate. A top electrode overlies the dielectric layer. The top electrode comprises a single polygon containing a two-dimensional array of openings therein that exposes the diffusion junctions. The top electrode preferably comprises polysilicon. An interlevel dielectric layer overlies the top electrode and the diffusion junction. The interlevel dielectric layer has a two-dimensional array of contact openings that expose the underlying diffusion junctions. A patterned metal layer overlies the interlevel dielectric layer and contacts the diffusion junctions through the contact openings.
摘要翻译：描述了一种新的MOS变容二极管装置。底部电极在半导体衬底中包括多个扩散结。半导体衬底可以是n型或p型。扩散结被排列成二维阵列。扩散结可以是n型或p型。扩散结可以包含在p阱或n阱中。电介质层覆盖在半导体衬底上。顶部电极覆盖在电介质层上。顶部电极包括单个多边形，其中包含其中的开口的二维阵列，其暴露扩散结。顶部电极优选包括多晶硅。层间电介质层覆盖上电极和扩散结。层间电介质层具有暴露下面的扩散结的接触开口的二维阵列。图案化金属层覆盖层间电介质层，并通过接触开口接触扩散接头。

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