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1. 发明申请

WO2021034365A1 THICKNESS MODE RESONATOR 审中-公开
公开(公告)号：WO2021034365A1
公开(公告)日：2021-02-25
申请号：PCT/US2020/034615
申请日：2020-05-27
申请人： MURATA MANUFACTURING CO., LTD. , KAAJAKARI, Ville
发明人： KAAJAKARI, Ville
IPC分类号： H03H3/04 , H03H9/02 , H03H9/17 , H03H9/15 , B06B1/06 , G10K11/02 , G10K11/04
摘要： A resonator that includes a substrate with a cavity that extends in a principal surface thereof and a vibrating resonator above the principal surface of the substrate and including bottom and top electrodes with a piezoelectric layer disposed therebetween. Moreover, a silicon dioxide layer is provided above the substrate and below the vibrating resonator to cover the cavity of the substrate, and a silicon layer is provided between the silicon dioxide layer and the vibrating resonator. The bottom electrode, the top electrode and the piezoelectric layer of the vibrating resonator each have a thickness configured to accommodate substantially a half wavelength λ/2 of the resonator, and the silicon layer has a thickness that accommodates substantially multiple of the half wavelength λ/2 of the resonator.

2. 发明申请

WO2020259661A1 一种高频声表面波谐振器及其制备方法审中-公开
公开(公告)号：WO2020259661A1
公开(公告)日：2020-12-30
申请号：PCT/CN2020/098391
申请日：2020-06-28
申请人：中国科学院上海微系统与信息技术研究所
发明人：欧欣 , 张师斌 , 周鸿燕 , 王成立 , 郑鹏程 , 黄凯
IPC分类号： H03H9/02 , H03H3/02 , H03H3/04
摘要：本发明提供一种高频声表面波谐振器及其制备方法，所述高频声表面波谐振器包括：高波速支撑衬底，位于所述高波速支撑衬底上表面的压电膜，及位于所述压电膜上表面的顶电极；其中，所述高波速支撑衬底中传播的体波波速大于所述压电膜中传播的目标弹性波波速。通过本发明提供的高频声表面波谐振器及其制备方法，解决了现有声表面波谐振器的工作频率较低的问题。

3. 发明申请

WO2018182626A1 DEVICE TO ELIMINATE SPURIOUS MODES IN SOLIDLY MOUNTED ACOUSTIC RESONATORS 审中-公开
公开(公告)号：WO2018182626A1
公开(公告)日：2018-10-04
申请号：PCT/US2017/025057
申请日：2017-03-30
申请人： INTEL CORPORATION
发明人： MOHAMMED, Edris , JUN, Kimin , LIN, Kevin
IPC分类号： H03H9/02 , H03H3/04 , H03H9/56
CPC分类号： H03H9/175 , H03H3/02 , H03H9/02118 , H03H2003/025
摘要： A solidly mounted acoustic resonator, including a first metal region on a substrate, a piezoelectric region over the first metal region, and a second metal region over the piezoelectric region. The second metal region includes an outer frame portion, a middle portion, and a metal-mesh portion between the outer frame portion and the middle portion.

4. 发明申请

WO2018038915A1 SINGLE-CHIP MULTI-FREQUENCY FILM BULK ACOUSTIC-WAVE RESONATORS 审中-公开
标题翻译：单片多频片大容量声波谐振器
公开(公告)号：WO2018038915A1
公开(公告)日：2018-03-01
申请号：PCT/US2017/045982
申请日：2017-08-08
申请人： QUALCOMM INCORPORATED
发明人： YUN, Changhan Hobie , LAN, Je-Hsiung , ZUO, Chengjie , BERDY, David , KIM, Jonghae , VELEZ, Mario , MUDAKATTE, Niranjan Sunil , GU, Shiqun
IPC分类号： H03H3/04 , H03H9/17
CPC分类号： H03H9/205 , H01L41/332 , H03H3/04 , H03H9/173 , H03H9/54 , H03H2003/021 , H03H2003/0435 , H03H2003/0442 , H03H2003/0471
摘要： A single-die multi-FBAR (film bulk acoustic resonator) device (200) includes multiple FBARs (202, 204, 206) having different resonant frequencies formed over a single substrate (220). The FBARs include piezoelectric layers (212, 214, 216) having different thicknesses but with upper electrodes (218) formed at a same height over the substrate, lower electrodes (210) at different heights over the substrate, and different sized air gaps (224, 226, 228) separating the lower electrodes from the substrate.
摘要翻译：单芯片多FBAR（薄膜体声波谐振器）装置（200）包括在单个衬底（220）上形成的具有不同谐振频率的多个FBAR（202,204,206）。 FBAR包括具有不同厚度的压电层（212,214,216），但是具有在衬底上方以相同高度形成的上电极（218），在衬底上的不同高度处的下电极（210）以及不同尺寸的气隙（224 ，226,228）将下电极与衬底分开。

5. 发明申请

WO2006107961A2 ELECTRICALLY RESPONSIVE DEVICE 审中-公开
标题翻译：电动响应装置
公开(公告)号：WO2006107961A2
公开(公告)日：2006-10-12
申请号：PCT/US2006012491
申请日：2006-04-05
申请人： BIOSCALE INC , MASTERS BRETT P , MILLER MICHAEL F
发明人： MASTERS BRETT P , MILLER MICHAEL F
IPC分类号： H03H3/00 , H03H3/04 , H03H3/10 , H03H9/02
CPC分类号： G01N29/036 , G01N9/002 , G01N2291/0256
摘要： Electrically responsive devices and methods for fabricating electrically responsive devices involves applying an electrically responsive material (e.g., an electroactive material) over at least a portion of a surface of a substrate material and applying an electrode material over at least a portion of a surface of the electrically responsive material. At least one region of the electrode material is selectively removed exposing the electrically responsive material. At least some of the electrically responsive material is selectively removed in a region corresponding to the at least one region of the electrode material.
摘要翻译：用于制造电响应装置的电响应装置和方法包括在基底材料的表面的至少一部分上施加电响应材料（例如，电活性材料），并将电极材料施加到至少一部分表面上电响应材料。选择性地去除电极材料的至少一个区域，暴露出电响应材料。在对应于电极材料的至少一个区域的区域中选择性地去除至少一些电响应材料。

6. 发明申请

WO2005034345A8 RESONATOR STRUCTURE AND METHOD OF PRODUCING IT 审中-公开
标题翻译：谐振器结构及其生产方法
公开(公告)号：WO2005034345A8
公开(公告)日：2006-07-20
申请号：PCT/IB2004051867
申请日：2004-09-27
申请人： PHILIPS INTELLECTUAL PROPERTY , KONINKL PHILIPS ELECTRONICS NV , LOEBL HANS PETER , MILSOM ROBERT FREDERICK , METZMACHER CHRISTOF
发明人： LOEBL HANS PETER , MILSOM ROBERT FREDERICK , METZMACHER CHRISTOF
IPC分类号： H03H9/02 , H03H3/04 , H03H9/17 , H03H9/56
CPC分类号： H03H9/175 , H03H3/04 , H03H9/564 , H03H2003/0428 , Y10T29/42
摘要： In order to provide a resonator structure (100) in particular a bulk-acoustic-wave (BAW) resonator, such as a film BAW resonator (FBAR) or a solidly-mounted BAW resonator (SBAR), comprising at least one substrate (10); at least one reflector layer (20) applied or deposited on the substrate (10); at least one bottom electrode layer (30), in particular bottom electrode, applied or deposited on the reflector layer (20); at least one piezoelectric layer (40), in particular C-axis normal piezoelectric layer, applied or deposited on the bottom electrode layer (30); at least one top electrode layer (50), in particular top electrode, applied or deposited on the bottom electrode layer (30) and/or on the piezoelectric layer (40) such that the piezoelectric layer (40) is in between the bottom electrode layer (30) and the top electrode layer (50), it is proposed that at least one dielectric layer (63, 65) applied or deposited in and/or on at least one space in at least one region of non-overlap between the bottom electrode layer (30) and the top electrode layer (50). The invention is also concerned with a method of making such resonator structure a its use.
摘要翻译：为了提供特别是诸如膜BAW谐振器（FBAR）或固体安装的BAW谐振器（SBAR）的体声波（BAW）谐振器的谐振器结构（100），包括至少一个衬底（10 ）; 施加或沉积在所述衬底（10）上的至少一个反射器层（20）; 至少一个底部电极层（特别是底部电极）施加或沉积在反射器层（20）上; 施加或沉积在底部电极层（30）上的至少一个压电层（40），特别是C轴正常压电层; 至少一个顶部电极层（50），特别是顶部电极，施加或沉积在底部电极层（30）上和/或压电层（40）上，使得压电层（40）位于底部电极层（30）和顶部电极层（50），提出在至少一个空间中的至少一个空间中施加或沉积至少一个不重叠的区域中的至少一个电介质层（63,65）底部电极层（30）和顶部电极层（50）。本发明还涉及使其使用这种谐振器结构的方法。

7. 发明申请

WO2005071832A1 圧電共振部品の周波数調整方法及び圧電共振部品审中-公开
标题翻译：压电谐振器频率调整方法和压电谐振器
公开(公告)号：WO2005071832A1
公开(公告)日：2005-08-04
申请号：PCT/JP2004/016043
申请日：2004-10-28
申请人：株式会社村田製作所 , 池田功
发明人：池田功
IPC分类号： H03H3/04
CPC分类号： H03H9/0514 , H03H3/04 , H03H9/02086 , H03H9/0547 , H03H9/58
摘要：　上方からエネルギー線を照射して電極をエッチングするようにして周波数調整を行った場合に、絶縁抵抗の低下、短絡不良及び電極間マイグレーションなどが生じ難い、圧電共振部品の周波数調整方法を提供する。　側面１４ａ，１４ｂ及び上面を有する圧電体１４と、圧電体１４の上面に設けられた電極１５とを有し、側面１４ａ，１４ｂが、上端に比べて下方部分が圧電体１４の中心側に位置するように傾斜面とされている圧電共振部品の上面に開口部２２ａを有するマスク２２を配置し、上方からイオンビームを照射することにより圧電共振部品の周波数を調整する周波数調整方法。
摘要翻译：提供了一种压电谐振器频率调节方法，用于通过从上方施加能量射线来进行用于蚀刻电极的频率调节时，抑制绝缘电阻，短路缺陷和电极间迁移的降低。压电谐振器包括：具有侧表面（14a，14b）和上表面的压电体（14）; 以及布置在所述压电体（14）的上表面上的电极（15）。侧面（14a，14b）倾斜，使得下部与上端相比朝向压电体（14）的中心移动。具有开口（22a）的掩模（22）布置在压电谐振器的上表面上，从而从上方施加离子束以调节压电谐振器的频率。

8. 发明申请

WO2003028211A3 BULK RESONATOR 审中-公开
公开(公告)号：WO2003028211A3
公开(公告)日：2003-04-03
申请号：PCT/US2002/027681
申请日：2002-08-29
申请人： HONEYWELL INTERNATIONAL INC.
发明人： PECZALSKI, Andrzej
IPC分类号： H03H3/04
摘要： A resonator having temperature and electronic compensation. The resonator has several layers on a substrate having opposite thermal coefficients of the sound velocity for temperature compensation. Also, the frequency of the resonator is adjusted in accordance with an external time reference. The resonator has a high quality factor and a very small size.

9. 发明申请

WO02039537A1 THIN FILM RESONATOR AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：薄膜共振器及其制造方法
公开(公告)号：WO02039537A1
公开(公告)日：2002-05-16
申请号：PCT/KR2001/001894
申请日：2001-11-07
IPC分类号： H03H9/00 , H03H3/02 , H03H3/04 , H03H9/05 , H03H9/10 , H03H9/13 , H03H9/17 , H01P7/00
CPC分类号： H03H9/172 , H03H3/04 , H03H9/02133 , H03H9/0542 , H03H2003/027 , H03H2009/241
摘要： A thin film resonator having enhanced performance and a manufacturing method thereof are disclosed. The thin film resonator includes a supporting means, a first electrode, a dielectric layer and a second electrode. The supporting means has several posts and a supporting layer formed on the posts. The first electrode, the dielectric layer and the second electrode are successively formed on the supporting layer. The thin film resonator is exceptionally small and can be highly integrated, and the thickness of the dielectric layer of the resonator can be adjusted to achieve the integration of multiple bands including radio, intermediate and low frequencies. Also, the thin film resonator can minimize interference and has ideal dimensions because of its compact substrate, making the thin film resonator exceptionally small, yet comprising a three-dimensional, floating construction.
摘要翻译：公开了一种具有增强性能的薄膜谐振器及其制造方法。薄膜谐振器包括支撑装置，第一电极，电介质层和第二电极。支撑装置具有多个柱和形成在柱上的支撑层。第一电极，电介质层和第二电极依次形成在支撑层上。薄膜谐振器非常小，可以高度集成，并且可以调节谐振器的介电层的厚度，以实现包括无线电，中频和低频的多个频带的集成。此外，薄膜谐振器由于其紧凑的基板而使干扰最小化并且具有理想的尺寸，使得薄膜谐振器非常小，而且包括三维浮动结构。

10. 发明申请

WO2021219050A1 谐振器组件及其制造方法、半导体器件、电子设备审中-公开
公开(公告)号：WO2021219050A1
公开(公告)日：2021-11-04
申请号：PCT/CN2021/090818
申请日：2021-04-29
申请人：诺思（天津）微系统有限责任公司
发明人：杨清瑞 , 庞慰 , 张孟伦
IPC分类号： H03H3/007 , H03H3/10 , H03H9/15 , H03H2003/0071 , H03H2003/023 , H03H2003/025 , H03H2003/0442 , H03H2003/0471 , H03H3/02 , H03H3/04 , H03H9/205 , H03H9/25
摘要：一种谐振器组件及其制造方法，以及一种具有该谐振器组件的滤波器和一种具有该滤波器或谐振器组件的电子设备。该谐振器组件包括体声波谐振器和声表面波谐振器，其中：所述两个谐振器的电极结构位于一个基底（100）的同一侧。

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