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1. 发明申请

WO2010004482A1 EXTREME UV RADIATION REFLECTING ELEMENT COMPRISING A SPUTTER-RESISTANT MATERIAL 审中-公开
标题翻译：超耐紫外线辐射反射元件，包含防溅材料
公开(公告)号：WO2010004482A1
公开(公告)日：2010-01-14
申请号：PCT/IB2009/052855
申请日：2009-07-01
申请人： PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH , KONINKLIJKE PHILIPS ELECTRONICS N. V. , METZMACHER, Christof
发明人： METZMACHER, Christof
IPC分类号： G21K1/06
CPC分类号： G02B5/283 , B82Y10/00 , G21K1/062 , G21K2201/061 , G21K2201/067
摘要： The invention relates to an improved EUV reflecting element comprising a) a first layer essentially made out of a highly reflective material b) a second layer having a thickness of ≤5 nm and essentially made out of a material with a sputter resistance of ≤10nm per 10 8 shots and whereby the second layer is provided in the path of the incident and/or reflected EUV light.
摘要翻译：本发明涉及一种改进的EUV反射元件，其包括：a）基本由高反射材料制成的第一层; b）第二层，其厚度= 5nm，基本上由溅射电阻= 10nm的材料制成 108次射击，由此第二层设置在入射和/或反射的EUV光的路径中。

2. 发明申请

WO2009044312A1 HIGH VOLTAGE ELECTRICAL CONNECTION LINE 审中-公开
标题翻译：高压电气连接线
公开(公告)号：WO2009044312A1
公开(公告)日：2009-04-09
申请号：PCT/IB2008/053896
申请日：2008-09-25
申请人： PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH , KONINKLIJKE PHILIPS ELECTRONICS N.V. , FRAUNHOFER GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V. , VAUDREVANGE, Dominik, M. , NEFF, Jakob, W. , METZMACHER, Christof
发明人： VAUDREVANGE, Dominik, M. , NEFF, Jakob, W. , METZMACHER, Christof
IPC分类号： H05G2/00
CPC分类号： H05B41/245
摘要： The present invention relates to a high voltage electrical connection line (11), in particular for electrically connecting a gas discharge source (10) to a high voltage power source (9). The connection line is formed of a stack of two electrically conductive plates (2) separated by an electrically isolating layer (1). An electrically conductive layer (8) of a material having a higher electrical resistivity than the material of the conductive plates (2) is arranged between said isolating layer (1) and said conductive plates (2). The proposed connection line provides a higher life time when used for connecting a high voltage power source and a pulsed discharge lamp.
摘要翻译：本发明涉及高压电连接线（11），特别是用于将气体放电源（10）电连接到高压电源（9）。连接线由两层由电绝缘层（1）分开的导电板（2）形成。具有比导电板（2）的材料更高的电阻率的材料的导电层（8）被布置在所述隔离层（1）和所述导电板（2）之间。所提出的连接线在连接高压电源和脉冲放电灯时提供更长的使用寿命。

3. 发明申请

WO2005034345A1 RESONATOR STRUCTURE AND METHOD OF PRODUCING IT 审中-公开
标题翻译：谐振器结构及其生产方法
公开(公告)号：WO2005034345A1
公开(公告)日：2005-04-14
申请号：PCT/IB2004/051867
申请日：2004-09-27
申请人： PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH , KONINKLIJKE PHILIPS ELECTRONICS N. V. , LOEBL, Hans Peter , MILSOM, Robert Frederick , METZMACHER, Christof
发明人： LOEBL, Hans Peter , MILSOM, Robert Frederick , METZMACHER, Christof
IPC分类号： H03H9/02
CPC分类号： H03H9/175 , H03H3/04 , H03H9/564 , H03H2003/0428 , Y10T29/42
摘要： In order to provide a resonator structure (100) in particular a bulk-acoustic-wave (BAW) resonator, such as a film BAW resonator (FBAR) or a solidly-mounted BAW resonator (SBAR), comprising at least one substrate (10); at least one reflector layer (20) applied or deposited on the substrate (10); at least one bottom electrode layer (30), in particular bottom electrode, applied or deposited on the reflector layer (20); at least one piezoelectric layer (40), in particular C-axis normal piezoelectric layer, applied or deposited on the bottom electrode layer (30); at least one top electrode layer (50), in particular top electrode, applied or deposited on the bottom electrode layer (30) and/or on the piezoelectric layer (40) such that the piezoelectric layer (40) is in between the bottom electrode layer (30) and the top electrode layer (50), it is proposed that at least one dielectric layer (63, 65) applied or deposited in and/or on at least one space in at least one region of non-overlap between the bottom electrode layer (30) and the top electrode layer (50). The invention is also concerned with a method of making such resonator structure a its use.
摘要翻译：为了提供特别是诸如膜BAW谐振器（FBAR）或固体安装的BAW谐振器（SBAR）的体声波（BAW）谐振器的谐振器结构（100），包括至少一个衬底（10 ）; 施加或沉积在所述衬底（10）上的至少一个反射器层（20）; 至少一个底部电极层（特别是底部电极）施加或沉积在反射器层（20）上; 施加或沉积在底部电极层（30）上的至少一个压电层（40），特别是C轴正常压电层; 至少一个顶部电极层（50），特别是顶部电极，施加或沉积在底部电极层（30）上和/或压电层（40）上，使得压电层（40）位于底部电极层（30）和顶部电极层（50），提出在至少一个空间中的至少一个空间中施加或沉积至少一个不重叠的区域中的至少一个电介质层（63,65）底部电极层（30）和顶部电极层（50）。本发明还涉及使其使用这种谐振器结构的方法。

4. 发明申请

WO2010004481A1 EXTREME UV RADIATION GENERATING DEVICE COMPRISING A CORROSION-RESISTANT MATERIAL 审中-公开
标题翻译：包含耐腐蚀材料的极紫外辐射发生装置
公开(公告)号：WO2010004481A1
公开(公告)日：2010-01-14
申请号：PCT/IB2009/052853
申请日：2009-07-01
申请人： PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH , KONINKLIJKE PHILIPS ELECTRONICS N. V. , METZMACHER, Christof , WEBER, Achim
发明人： METZMACHER, Christof , WEBER, Achim
IPC分类号： H05G2/00
CPC分类号： H01J35/20 , H05G2/003 , H05G2/005
摘要： The invention relates to an improved EUV generating device having coated supply pipes for the liquid tin, in order to provide an extreme UV radiation generating device which is capable of providing a less contaminated flow of tin to and from a plasma generating part.
摘要翻译：本发明涉及一种改进的EUV产生装置，其具有用于液体锡的涂覆的供应管，以便提供极端的UV辐射产生装置，其能够提供较少的污染的来自等离子体产生部分的锡的流动。

5. 发明申请

WO2006136967A3 METHOD OF CLEANING OPTICAL SURFACES OF AN IRRADIATION UNIT IN A TWO-STEP PROCESS 审中-公开
标题翻译：在两步过程中清洁辐照单元的光学表面的方法
公开(公告)号：WO2006136967A3
公开(公告)日：2007-08-09
申请号：PCT/IB2006051814
申请日：2006-06-07
申请人： PHILIPS INTELLECTUAL PROPERTY , KONINKL PHILIPS ELECTRONICS NV , DERRA GUENTHER HANS , KRUECKEN THOMAS , METZMACHER CHRISTOF , WEBER ACHIM , ZINK PETER
发明人： DERRA GUENTHER HANS , KRUECKEN THOMAS , METZMACHER CHRISTOF , WEBER ACHIM , ZINK PETER
IPC分类号： G03F7/20
CPC分类号： B82Y10/00 , G03F7/70166 , G03F7/70916 , G03F7/70925
摘要： The present invention provides a method of cleaning optical surfaces in an irradiation unit in order to remove contaminations deposited on said optical surfaces. The method includes a cleaning step in which a first gas or gas mixture is brought into contact with said optical surfaces thereby forming a volatile compound with a first portion of said contaminations. In an operation pause of the irradiation unit prior to the cleaning step, a pretreatment step is performed, in which a second gas or gas mixture is brought into contact with said optical surfaces. Said second gas or gas mixture is selected to react with a second portion of said contaminations different from said first portion to form a reaction product, which is able to form a volatile compound with said first gas or gas mixture.
摘要翻译：本发明提供一种清洗照射单元中的光学表面以消除沉积在所述光学表面上的污染物的方法。该方法包括清洗步骤，其中第一气体或气体混合物与所述光学表面接触，从而形成具有所述污染物的第一部分的挥发性化合物。在清洁步骤之前的照射单元的操作暂停中，执行预处理步骤，其中第二气体或气体混合物与所述光学表面接触。选择所述第二气体或气体混合物与不同于所述第一部分的所述污染物的第二部分反应以形成能够与所述第一气体或气体混合物形成挥发性化合物的反应产物。

6. 发明申请

WO2006064414A1 THIN FILM ACOUSTIC REFLECTOR STACK 审中-公开
标题翻译：薄膜反声器叠层
公开(公告)号：WO2006064414A1
公开(公告)日：2006-06-22
申请号：PCT/IB2005/054097
申请日：2005-12-07
申请人： PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH , KONINKLIJKE PHILIPS ELECTRONICS N. V. , LÖBL, Hans-Peter , RITZ, Arnd , METZMACHER, Christof
发明人： LÖBL, Hans-Peter , RITZ, Arnd , METZMACHER, Christof
IPC分类号： H03H3/02 , C23C14/00
CPC分类号： C23C14/0078 , H03H3/02 , H03H2003/025
摘要： The invention refers to a method for the fabrication of a thin film acoustic reflector stack with alternating layers of a first and a second material having different acoustic characteristic impedances, wherein the layers are deposited alternately by a reactive pulsed dc magnetron sputtering process. The invention further comprises an acoustic reflector stack fabricated thereby and an arrangement for performing the method.
摘要翻译：本发明涉及一种用于制造具有不同声学特性阻抗的第一和第二材料的交替层的薄膜声反射器叠层的方法，其中通过反应式脉冲直流磁控溅射工艺交替沉积这些层。本发明还包括由其制造的声反射器叠层和用于执行该方法的装置。

7. 发明申请

WO2006018788A1 NARROW BAND BULK ACOUSTIC WAVE FILTER 审中-公开
标题翻译：窄带波纹声波滤波器
公开(公告)号：WO2006018788A1
公开(公告)日：2006-02-23
申请号：PCT/IB2005/052636
申请日：2005-08-09
申请人： PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH , KONINKLIJKE PHILIPS ELECTRONICS N. V. , LÖBL, Hans-Peter , METZMACHER, Christof , MILSOM, Robert Frederick , LOBEEK, Jan-Willem
发明人： LÖBL, Hans-Peter , METZMACHER, Christof , MILSOM, Robert Frederick , LOBEEK, Jan-Willem
IPC分类号： H03H3/04 , H03H9/02 , H03H9/17 , H03H9/58
CPC分类号： H03H9/175 , H03H9/0095 , H03H9/02102
摘要： Thin-film bulk acoustic wave filters based on piezoelectric resonators operating in the thickness extensionally mode achieve relative band-widths in the order of to 4 % at a center frequency of 2 GHz. According to an exemplary embodiment of the present invention, a filter is provided, comprising a plurality of low coupling coefficient bulk acoustic wave resonators forming a mixture of lattice- and laddersections. Advantageously, this may result in a low filter band-width of 6 MHz for a center frequency of 1 GHz and a high out-of-band rejection of more than 40 dB. Thus, a filter according to the present invention may be used in a TV up-conversion tuner.
摘要翻译：基于在厚度延伸模式下工作的压电谐振器的薄膜体声波滤波器在2GHz的中心频率下达到4％的相对带宽。根据本发明的示例性实施例，提供了一种滤波器，其包括形成格子和上层的混合的多个低耦合系数体声波谐振器。有利的是，对于1GHz的中心频率和高于40dB的高带外抑制，这可能导致6MHz的低滤波器带宽。因此，根据本发明的滤波器可以用在TV上变频调谐器中。

8. 发明申请

WO2004025832A8 BULK ACOUSTIC WAVE RESONATOR WITH MEANS FOR SUPPRESSION OF PASS-BAND RIPPLE IN BULK ACOUSTIC WAVE FILTERS 审中-公开
标题翻译：用于抑制大块声波滤波器中通带纹波的手段的大容量声波谐波器
公开(公告)号：WO2004025832A8
公开(公告)日：2005-03-10
申请号：PCT/IB0303993
申请日：2003-09-01
申请人： PHILIPS INTELLECTUAL PROPERTY , KONINKL PHILIPS ELECTRONICS NV , LOEBL HANS PETER , MILSOM ROBERT FREDERICK , METZMACHER CHRISTOF , BRAND HANS-WOLFGANG , KLEE MAREIKE KATHARINE , KIEWITT RAINER
发明人： LOEBL HANS PETER , MILSOM ROBERT FREDERICK , METZMACHER CHRISTOF , BRAND HANS-WOLFGANG , KLEE MAREIKE KATHARINE , KIEWITT RAINER
IPC分类号： H03H3/02 , H03H9/02 , H03H9/17 , H03H9/58
CPC分类号： H03H9/54 , H03H3/02 , H03H9/02055 , H03H9/0211 , H03H9/175
摘要： A bulk acoustic wave resonator comprising a substrate (5), a Bragg reflector (4), a top (1) and a bottom (3) electrode and a piezoelectric layer (2) with means for suppression of the pass-band ripples in a bulk acoustic wave filter. The means for absorbing or scattering the spurious modes are a roughened rear side of the substrate (6), an absorbing layer (5) disposed on the rear side of the substrate (6) and/or an absorbing layer (5) disposed on the front side of the substrate.
摘要翻译：一种体声波谐振器，包括基板（5），布拉格反射器（4），顶部（1）和底部（3）电极和压电层（2），具有用于抑制通带波纹的装置体声波滤波器。用于吸收或散射杂散模式的装置是基底（6）的粗糙化后侧，设置在衬底（6）的后侧上的吸收层（5）和/或设置在衬底衬底的正面。

9. 发明申请

WO2004025832A1 BULK ACOUSTIC WAVE RESONATOR WITH MEANS FOR SUPPRESSION OF PASS-BAND RIPPLE IN BULK ACOUSTIC WAVE FILTERS 审中-公开
标题翻译：具有用于抑制大容量波形滤波器中通带纹波的手段的大容量声波谐振器
公开(公告)号：WO2004025832A1
公开(公告)日：2004-03-25
申请号：PCT/IB2003/003993
申请日：2003-09-01
申请人： PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH , KONINKLIJKE PHILIPS ELECTRONICS N.V. , LÖBL, Hans, Peter , MILSOM, Robert, Frederick , METZMACHER, Christof , BRAND, Hans-Wolfgang , KLEE, Mareike, Katharine , KIEWITT, Rainer
发明人： LÖBL, Hans, Peter , MILSOM, Robert, Frederick , METZMACHER, Christof , BRAND, Hans-Wolfgang , KLEE, Mareike, Katharine , KIEWITT, Rainer
IPC分类号： H03H9/17
CPC分类号： H03H9/54 , H03H3/02 , H03H9/02055 , H03H9/0211 , H03H9/175
摘要： A bulk acoustic wave resonator comprising a substrate (5), a Bragg reflector (4), a top (1) and a bottom (3) electrode and a piezoelectric layer (2) with means for suppression of the pass-band ripples in a bulk acoustic wave filter. The means for absorbing or scattering the spurious modes are a roughened rear side of the substrate (6), an absorbing layer (5) disposed on the rear side of the substrate (6) and/or an absorbing layer (5) disposed on the front side of the substrate.
摘要翻译：一种体声波谐振器，包括基板（5），布拉格反射器（4），顶部（1）和底部（3）电极和压电层（2），具有用于抑制通带波纹的装置体声波滤波器。用于吸收或散射杂散模式的装置是基底（6）的粗糙化后侧，设置在衬底（6）的后侧上的吸收层（5）和/或设置在衬底衬底的正面。

10. 发明申请

WO2003098801A1 BULK WAVE RESONATOR AND BULK WAVE FILTER 审中-公开
标题翻译：大容量波形谐振器和大容量波形滤波器
公开(公告)号：WO2003098801A1
公开(公告)日：2003-11-27
申请号：PCT/IB2003/001883
申请日：2003-05-15
申请人： PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH , KONINKLIJKE PHILIPS ELECTRONICS N.V. , LÖBL, Hans, Peter , MILSOM, Robert, Frederick , KLEE, Mareike, Katharine , KIEWITT, Rainer , METZMACHER, Christof
发明人： LÖBL, Hans, Peter , MILSOM, Robert, Frederick , KLEE, Mareike, Katharine , KIEWITT, Rainer , METZMACHER, Christof
IPC分类号： H03H9/05
CPC分类号： H03H9/564 , H03H9/568
摘要： A bulk wave resonator comprising: a substrate (1); a layer (3) of piezoelectric material deposited on the substrate; a first electrode (2) and a second electrode (4) which are arranged on opposite surfaces of the layer (3) of piezoelectric material, the overlapping area of the first electrode (2) and second electrode (4) defining the resonance range of the bulk wave resonator, characterized in that the overlapping area in an intersecting plane parallel to at least one of the electrodes (2, 4) has an aspect ratio in the range from 1 (b/a) 100, where a is the length and b the width of the bulk wave resonator. The invention also relates to a bulk wave filter comprising such bulk wave resonators.
摘要翻译：一种体波谐振器，包括：基板（1）; 沉积在基板上的压电材料层（3）; 布置在压电材料层（3）的相对表面上的第一电极（2）和第二电极（4），第一电极（2）和第二电极（4）的重叠区域限定谐振范围所述体波谐振器的特征在于，与所述电极（2,4）中的至少一个平行的交叉平面中的重叠区域具有在1（b / a）100范围内的纵横比，其中a是所述长度和 b是体波谐振器的宽度。本发明还涉及包括这种体波谐振器的体波滤波器。

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