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    • 2. 发明申请
    • RESONATOR STRUCTURE AND METHOD OF PRODUCING IT
    • 谐振器结构及其生产方法
    • WO2005034345A8
    • 2006-07-20
    • PCT/IB2004051867
    • 2004-09-27
    • PHILIPS INTELLECTUAL PROPERTYKONINKL PHILIPS ELECTRONICS NVLOEBL HANS PETERMILSOM ROBERT FREDERICKMETZMACHER CHRISTOF
    • LOEBL HANS PETERMILSOM ROBERT FREDERICKMETZMACHER CHRISTOF
    • H03H9/02H03H3/04H03H9/17H03H9/56
    • H03H9/175H03H3/04H03H9/564H03H2003/0428Y10T29/42
    • In order to provide a resonator structure (100) in particular a bulk-acoustic-wave (BAW) resonator, such as a film BAW resonator (FBAR) or a solidly-mounted BAW resonator (SBAR), comprising at least one substrate (10); at least one reflector layer (20) applied or deposited on the substrate (10); at least one bottom electrode layer (30), in particular bottom electrode, applied or deposited on the reflector layer (20); at least one piezoelectric layer (40), in particular C-axis normal piezoelectric layer, applied or deposited on the bottom electrode layer (30); at least one top electrode layer (50), in particular top electrode, applied or deposited on the bottom electrode layer (30) and/or on the piezoelectric layer (40) such that the piezoelectric layer (40) is in between the bottom electrode layer (30) and the top electrode layer (50), it is proposed that at least one dielectric layer (63, 65) applied or deposited in and/or on at least one space in at least one region of non-overlap between the bottom electrode layer (30) and the top electrode layer (50). The invention is also concerned with a method of making such resonator structure a its use.
    • 为了提供特别是诸如膜BAW谐振器(FBAR)或固体安装的BAW谐振器(SBAR)的体声波(BAW)谐振器的谐振器结构(100),包括至少一个衬底(10 ); 施加或沉积在所述衬底(10)上的至少一个反射器层(20); 至少一个底部电极层(特别是底部电极)施加或沉积在反射器层(20)上; 施加或沉积在底部电极层(30)上的至少一个压电层(40),特别是C轴正常压电层; 至少一个顶部电极层(50),特别是顶部电极,施加或沉积在底部电极层(30)上和/或压电层(40)上,使得压电层(40)位于底部电极 层(30)和顶部电极层(50),提出在至少一个空间中的至少一个空间中施加或沉积至少一个不重叠的区域中的至少一个电介质层(63,65) 底部电极层(30)和顶部电极层(50)。 本发明还涉及使其使用这种谐振器结构的方法。
    • 3. 发明申请
    • TIME-DOMAIN CIRCUIT MODELLER
    • 时域电路模型
    • WO9916158A3
    • 1999-06-17
    • PCT/IB9801376
    • 1998-09-03
    • KONINKL PHILIPS ELECTRONICS NVPHILIPS SVENSKA AB
    • MILSOM ROBERT FREDERICK
    • G01R31/28G06F17/50G06F19/00H01L29/00
    • G06F17/5036
    • A method of, and apparatus for, obtaining a representation of an electrical circuit (400) suitable for time-domain simulation. The electrical circuit comprises a physical structure (102), which is modelled using electromagnetic field analysis, and also comprises a remainder circuit (104) of circuit components which are interconnected with the physical structure. The electromagnetic field analysis is capable of generating at least a high-frequency equivalent circuit which is representative of the physical structure (102) and is valid at the operating frequency of the circuit but not at DC. The method comprises including a set of DC sources (E1 to Ek) to ensure that, in a time-domain simulation, improved DC bias conditions are provided for any non-linear components in the remainder circuit. The DC sources may be voltage sources in each interconnection, current sources between each interconnection and a zero voltage reference interconnection, or a combination of the two.
    • 一种用于获得适合于时域仿真的电路(400)的表示的方法和装置。 电路包括使用电磁场分析建模的物理结构(102),并且还包括与物理结构互连的电路组件的剩余电路(104)。 电磁场分析能够产生至少代表物理结构(102)的高频等效电路并且在电路的工作频率但在DC上不是有效的。 该方法包括包括一组DC源(E1至Ek)以确保在时域仿真中为剩余电路中的任何非线性组件提供改进的DC偏置条件。 DC源可以是每个互连中的电压源,每个互连与零电压参考互连之间的电流源,或者两者的组合。