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1. 发明申请

WO9104573A3 EXCIMER LASER ABLATION METHOD AND APPARATUS FOR MICROCIRCUIT DEVICE FABRICATION 审中-公开
标题翻译：用于微循环设备制造的激光消融方法和设备
公开(公告)号：WO9104573A3
公开(公告)日：1991-05-02
申请号：PCT/US9004899
申请日：1990-08-29
申请人： HUGHES AIRCRAFT CO
发明人： BREWER PETER D , ZINCK JENNIFER J
IPC分类号： B23K26/00 , B23K26/06 , H01L21/302 , H01L21/36 , H01L21/428 , H01L21/461 , H01L21/465
CPC分类号： H01L21/461 , H01L21/428
摘要： A pulsed beam (14) from an excimer laser (10) is used for precision ablation of cadmium telluride (CdTe) and other material (16) to fabricate and delineate devices in electronic microcircuit structures. The fluence of the beam may be adjusted to selectively remove one constituent of the material (16), such as cadmium vs. tellurium, at a higher rate than the other constituent, while maintaining the integrity of the material surface. The beam may selectively remove an epitaxial layer of CdTe, CdZnTe, or HgCdTe from a GaAs substrate. The beam may be directed through a projection mask (32) and optical system (40) onto a material (34) to form an image for patterned ablation. The optical system (40) may focus an image of the mask on the material to form vertical sidewall patterns, or slightly defocus the image to form curved sidewall patterns and/or concave and convex lens structures for optical arrays.
摘要翻译：来自准分子激光器（10）的脉冲束（14）被用于精确烧蚀碲化镉（CdTe）和其他材料（16）以制造和描绘电子微电路结构中的器件。可以调节束的能量密度以在保持材料表面的完整性的同时，以比其他组分更高的速率选择性地去除材料（16）的一个组分，例如镉对碲。该束可以选择性地从GaAs衬底去除CdTe，CdZnTe或HgCdTe的外延层。该束可以通过投影掩模（32）和光学系统（40）被引导到材料（34）上以形成图案化消融的图像。光学系统（40）可以将掩模的图像聚焦在材料上以形成垂直侧壁图案，或者稍微散焦图像以形成用于光学阵列的弯曲侧壁图案和/或凹和凸透镜结构。

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