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1. 发明申请

WO2008068009A1 A UNIVERSAL METHOD FOR SELECTIVE AREA GROWTH OF ORGANIC MOLECULES BY VAPOR DEPOSITION 审中-公开
标题翻译：选择性区域通过蒸气沉积生长有机分子的通用方法
公开(公告)号：WO2008068009A1
公开(公告)日：2008-06-12
申请号：PCT/EP2007/010568
申请日：2007-12-05
申请人： WESTFÄLISCHE WILHELMS-UNIVERSITÄT MÜNSTER , FUCHS, Harald , CHI, Lifeng , WANG, Wengchong , ZHONG, Dingyong
发明人： FUCHS, Harald , CHI, Lifeng , WANG, Wengchong , ZHONG, Dingyong
IPC分类号： C23C14/04 , C23C14/12 , C30B23/04 , C30B29/54
CPC分类号： C23C14/042 , C23C14/12 , C30B23/04 , C30B29/54 , H01L51/0011 , Y02E10/549
摘要： A method for selective growth of organic molecules on a substrate is proposed. The method comprises: creating a pattern of nucleation sites for the organic molecules on the substrate; depositing of organic molecules at the nucleation sites by vapor deposition. An organic material based device obtained by performing the method is also proposed. The method offers an alternative to methods that are known the fields of coating technology or semiconductor fabrication.
摘要翻译：提出了一种在衬底上选择性生长有机分子的方法。该方法包括：为基底上的有机分子产生成核位点图案; 通过气相沉积在成核位置沉积有机分子。还提出了通过执行该方法获得的基于有机材料的装置。该方法提供了已知的涂覆技术或半导体制造领域的方法的替代方案。

2. 发明申请

WO2004039731A3 NANOSTRUCTURES PRODUCED BY PHASE-SEPARATION DURING GROWTH OF (III-V)1-X(IV2)X ALLOYS 审中-公开
标题翻译：（III-V）1-X（IV2）X合金在生长期间通过相分离生产的纳米结构
公开(公告)号：WO2004039731A3
公开(公告)日：2004-06-24
申请号：PCT/US0234861
申请日：2002-10-29
申请人： MIDWEST RESEARCH INST , NORMAN ANDREW G , OLSON JERRY M
发明人： NORMAN ANDREW G , OLSON JERRY M
IPC分类号： C01G20060101 , C23C16/30 , C30B23/04 , C30B25/02 , C30B25/04 , C30B25/14 , C30B25/22 , C30B29/60 , C30B29/62
CPC分类号： B82Y30/00 , C23C16/301 , C30B25/02 , C30B29/60 , C30B29/605
摘要： Nanostructures (18) and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one of the methods may comprise providing a growth surface in a reaction chamber and introducing a first mixture of precursor materials into the reaction chamber to form a buffer layer (12) thereon. A second mixture of precursor materials may be provided into the reaction chamber to form an active region (14) on the buffer layer (12), wherein the nanostructure (18) is embedded in a matrix (16) in the active region (14). Additional steps are also disclosed for preparing the nanostructure (18) product for various applications.
摘要翻译：纳米结构（18）及其在金属有机气相外延（MOVPE）期间通过相分离生产它们的方法。其中一种方法的实施方式可以包括在反应室中提供生长表面并且将前体材料的第一混合物引入到反应室中以在其上形成缓冲层（12）。前体材料的第二混合物可以被提供到反应室中以在缓冲层（12）上形成活性区域（14），其中纳米结构（18）嵌入活性区域（14）中的基体（16）中，。还公开了用于制备用于各种应用的纳米结构（18）产品的附加步骤。

3. 发明申请

WO99001594A1 THERMAL MISMATCH COMPENSATION TO PRODUCE FREE STANDING SUBSTRATES BY EPITAXIAL DEPOSITION 审中-公开
标题翻译：通过外延沉积生产自由定型基板的热补偿补偿
公开(公告)号：WO99001594A1
公开(公告)日：1999-01-14
申请号：PCT/US1998/014002
申请日：1998-07-02
IPC分类号： C30B33/00 , C30B25/02 , C30B25/18 , C30B29/38 , H01L21/205 , H01L33/00 , C30B23/04 , C30B25/04 , C30B29/40
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , C30B29/48 , C30B29/64 , H01L33/007 , H01L33/0075 , H01L33/0079 , Y10S117/913 , Y10S117/915
摘要： A method for producing thick, high quality GaN substrates uses an epitaxially deposited film and is used as a substrate material for further device or epitaxial processing. The film (11) is deposited using an epitaxial technique on a thin substrate called the disposable substrate (10). The deposited film is thick enough so that upon cooling the thermal mismatched strain is relieved through cracking of the lower disposable substrate and not the newly deposited epitaxy. The epitaxial film now becomes a platform for either further epitaxial deposition or device processing.
摘要翻译：用于生产厚的，高质量的GaN衬底的方法使用外延沉积膜，并且用作用于进一步器件或外延处理的衬底材料。使用外延技术将薄膜（11）沉积在称为一次性基板（10）的薄基板上。沉积的膜足够厚，使得在冷却时，热失配应变通过下一次性衬底的破裂而不是新沉积的外延而被释放。外延膜现在成为进一步外延沉积或器件处理的平台。

4. 发明申请

WO2018142061A1 PROCEDE DE FABRICATION D'UN FILM BIDIMENSIONNEL DE STRUCTURE CRISTALLINE HEXAGONALE 审中-公开
公开(公告)号：WO2018142061A1
公开(公告)日：2018-08-09
申请号：PCT/FR2018/050217
申请日：2018-01-31
申请人： SOITEC
发明人： GHYSELEN, Bruno , BETHOUX, Jean-Marc
IPC分类号： C30B23/02 , C30B23/04 , C30B25/18 , C30B29/02 , H01L21/683 , C30B33/06
摘要： L'invention concerne un procédé de fabrication d'un film bidimensionnel d'un matériau du groupe IV présentant une structure cristalline hexagonale, notamment de graphène, comprenant : - la formation d'un substrat de croissance (100), comprenant le transfert d'un film métallique (1) monocristallin adapté pour la croissance dudit film bidimensionnel sur un substrat support (2), et - la croissance par épitaxie du film (3) bidimensionnel sur le film métallique dudit substrat (100).

5. 发明申请

WO2004012227A3 METHOD FOR PRODUCING BY VAPOUR-PHASE EPITAXY A GALLIUM NITRIDE FILM WITH LOW DEFECT DENSITY 审中-公开
标题翻译：低缺陷密度的氮化镓薄膜的气相生长方法
公开(公告)号：WO2004012227A3
公开(公告)日：2004-04-29
申请号：PCT/FR0302340
申请日：2003-07-24
申请人： LUMILOG , BEAUMONT BERNARD , GIBART PIERRE , FAURIE JEAN-PIERRE
发明人： BEAUMONT BERNARD , GIBART PIERRE , FAURIE JEAN-PIERRE
IPC分类号： C30B23/04 , C30B25/02 , C30B29/38 , C30B30/02 , C30B30/04 , H01L21/20 , H01L21/205 , H01L33/00 , H01S5/323
CPC分类号： C30B25/02 , C30B29/406 , H01L21/02389 , H01L21/0242 , H01L21/0254 , H01L21/02642 , H01L33/007
摘要： The invention concerns a method for preparing gallium nitride films by vapour-phase epitaxy with low defect densities. The invention concerns a method for producing a gallium nitride (GaN) film from a substrate by vapour-phase epitaxy deposition of gallium nitride. The invention is characterized in that the gallium nitride deposition comprises at least one step of vapour-phase epitaxial lateral overgrowth, in that at least one of said epitaxial lateral overgrowth steps is preceded by etching openings either in a dielectric mask previously deposited, or directly into the substrate, and in that it consists in introducing a dissymmetry in the environment of dislocations during one of the epitaxial lateral overgrowth steps so as to produce a maximum number of curves in the dislocations, the curved dislocations not emerging at the surface of the resulting gallium nitride layer. The invention also concerns the optoelectronic and electronic components produced from said gallium nitride films..
摘要翻译：本发明涉及通过低缺陷密度的气相外延制备氮化镓膜的方法。本发明涉及一种通过氮化镓的气相外延沉积从衬底制造氮化镓（GaN）膜的方法。本发明的特征在于，氮化镓沉积包括至少一个气相外延横向过生长的步骤，其中至少一个所述外延横向过生长步骤之前是蚀刻先前沉积的介电掩模中的开口或直接蚀刻并且在于其在外延横向过生长步骤之一的位错环境中引入不对称性，以便在位错中产生最大数量的曲线，弯曲位错不会在所得镓的表面处出现氮化物层。本发明还涉及由所述氮化镓膜生产的光电子和电子部件。

6. 发明申请

WO00026948A1 SEMICONDUCTOR WAFER AND VAPOR GROWTH APPARATUS 审中-公开
标题翻译：半导体波形和蒸汽增长装置
公开(公告)号：WO00026948A1
公开(公告)日：2000-05-11
申请号：PCT/JP1999/005968
申请日：1999-10-28
IPC分类号： C23C16/44 , C23C16/455 , C30B25/02 , C30B25/14 , H01L21/205 , C30B23/02 , C30B23/04 , C30B23/06 , C30B23/08 , H01L21/22
CPC分类号： C23C16/45563 , C23C16/45561 , C23C16/45574 , C30B25/14 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/02579 , H01L21/0262 , Y10T428/12528 , Y10T428/21 , Y10T428/31
摘要： A semiconductor wafer comprising a semiconductor monocrystalline substrate having a relatively low dopant concentration and a large diameter of 300 mm or more and a semiconductor thin film formed on a major surface of the substrate and having a uniform resistivity and including substantially no slip, and a vapor growth apparatus for producing such a semiconductor wafer. Dopant gases supplied through a common gas pipe (22a) serving as a main dopant gas pipe are introduced into a reaction vessel (10) from all the six inlet ports (18a, 18b, ..., 18f) provided in the direction of the width of the reaction vessel (10). Dopant gases supplied through first and second auxiliary pipes (22b, 22c) are additionally fed into the reaction vessel (10) from the inner inlet ports (18a, 18b) and the middle inlet ports (18c, 18d) serving as specific inlet ports.
摘要翻译：一种半导体晶片，包括具有相对低的掺杂剂浓度和300mm以上的大直径的半导体单晶衬底和形成在衬底的主表面上并且具有均匀电阻率且基本上不包含滑移的半导体薄膜，以及蒸汽用于制造这种半导体晶片的生长装置。通过用作主要掺杂剂气体管道的公共气体管道（22a）供应的掺杂气体从设置在主要掺杂剂气体管道的方向的所有六个入口端口（18a，18b，...，18f）引入反应容器（10）反应容器（10）的宽度。从作为特定入口的内部入口（18a，18b）和中间入口（18c，18d）另外将通过第一和第二辅助管道（22b，22c）供应的掺杂气体进料到反应容器（10）中。

7. 发明申请

WO99019546A1 METHODS FOR GROWING DEFECT-FREE HETEROEPITAXIAL LAYERS 审中-公开
标题翻译：用于生长无缺陷的异相层的方法
公开(公告)号：WO99019546A1
公开(公告)日：1999-04-22
申请号：PCT/US1998/020484
申请日：1998-10-06
IPC分类号： C30B23/02 , C30B25/02 , C30B25/18 , C30B23/04 , C30B25/04 , C30B25/14 , C30B29/40
CPC分类号： C30B23/02 , C30B25/02 , C30B25/18
摘要： New methods for growing threading dislocation free heteroepitaxy are proposed and investigated theoretically. The first method contains four key steps: Stranski-Krastanov island (14) formation, strain relaxation by defect nucleation, in-situ defect removal, and island coalescence. The central idea is that the defects (16) are utilized to relax the lattice strain, and as soon as the strain is relaxed, the dislocation segments are removed that will propagate to the surface of the film. As a result, the heteroepitaxial film or layer is expected to be relaxed but be free of harmful threading dislocations regardless of the degree of lattice mismatch. In the second method, single crystal islands or patches are grown initially which are a few hundred nanometers or less in diameter. The patches serve as nucleation sites for growth of single crystal heteroepitaxial layers. Because of the very small patch size, the stress (normal stress and shear stress) due to lattice mismatch will be reduced significantly. As the growth proceeds, the size of nucleation islands increases in both vertical and lateral directions and the discrete islands soon coalesce to form a continuous thin film. If all coalescing islands have the same or nearly the same crystal orientation, then the net stress will be close to zero, and a smooth, defect-free heteroepitaxial layer can be grown to any thickness.
摘要翻译：理论上提出和研究了用于生长穿透无位错异质外延的新方法。第一种方法包括四个关键步骤：Stranski-Krastanov岛（14）形成，通过缺陷成核的应变弛豫，原位缺陷去除和岛聚结。中心思想是利用缺陷（16）来松弛晶格应变，并且一旦应变松弛，就去除位错段，其将传播到膜的表面。结果，不管晶格失配的程度如何，预期异质外延膜或层被放宽，但是没有有害的穿透位错。在第二种方法中，初始生长直径为几百纳米或更小的单晶岛或斑块。该贴片用作单晶异质外延层生长的成核位点。由于贴片尺寸非常小，由于晶格失配引起的应力（正应力和剪切应力）将显着降低。随着生长的进行，成核岛的大小在垂直和横向两个方向都增加，并且离散的岛很快聚结以形成连续的薄膜。如果所有聚结岛具有相同或几乎相同的晶体取向，则净应力将接近零，并且可以生长平滑无缺陷的异质外延层至任何厚度。

8. 发明申请

WO2023048150A1 結晶膜の製造方法および結晶膜审中-公开
公开(公告)号：WO2023048150A1
公开(公告)日：2023-03-30
申请号：PCT/JP2022/035038
申请日：2022-09-20
申请人：株式会社ＦＬＯＳＦＩＡ , 国立研究開発法人物質・材料研究機構
发明人：大島　祐一 , 四戸　孝
IPC分类号： C30B29/16 , C23C16/04 , C23C16/40 , C30B23/04 , H01L21/365
摘要：半導体装置等に有用な、転位が低減された高品質な結晶膜の製造方法および結晶品質に優れた結晶膜を提供する。結晶基板の結晶成長面上に、直接または他の層を介して、凹部または凸部からなる凹凸部を形成し、ついで、結晶膜を成膜する結晶膜の製造方法であって、　前記結晶成長面が、ｃ面から９０度未満の角度で傾いた面であり、前記凹凸部が、前記結晶成長面とｃ面との交線と平行な方向に沿って配置されている結晶膜の製造方法。

9. 发明申请

WO2022240477A1 IN SITU DAMAGE FREE ETCHING OF Ga 2O3 USING Ga FLUX FOR FABRICATING HIGH ASPECT RATIO 3D STRUCTURES 审中-公开
公开(公告)号：WO2022240477A1
公开(公告)日：2022-11-17
申请号：PCT/US2022/020143
申请日：2022-03-14
申请人： OHIO STATE INNOVATION FOUNDATION
发明人： KALARICKAL, Nidhin Kurian , FIEDLER, Andreas , RAJAN, Siddharth
IPC分类号： H01L21/02 , C23C16/40 , C23F1/12 , C30B23/04 , C30B23/06 , H01L21/033 , H01L21/465 , H01L29/66227
摘要： A method for using gallium beam flux in an ultra-low vacuum environment to etch Ga2O3 epilayer surfaces is provided. An Ga2O3 epilayer surface (105) is patterned by applying a SiO2 mask (107) that corresponds to a desired structure (810). The patterned surface is then placed in an ultra-low vacuum environment (130) and is heated to a very high temperature (820; 830). At the same time, a gallium flux is supplied to the patterned surface in the ultra-low vacuum environment (840). The gallium flux causes etching in the patterned surface that is not covered by the SiO2 mask. Using this method, sub-micron (~100 nm) three-dimensional (3D) structures like fins, trenches, and nano-pillars can be fabricated with vertical sidewalls.

10. 发明申请

WO0240417A2 METHODS OF OBTAINING PHOTOACTIVE COATINGS AND/OR ANATASE CRYSTALLINE PHASE OF TITANIUM OXIDES AND ARTICLES MADE THEREBY 审中-公开
标题翻译：获得氧化钛和其制品的光泽涂料和/或分解晶体相的方法
公开(公告)号：WO0240417A2
公开(公告)日：2002-05-23
申请号：PCT/US0127355
申请日：2001-08-31
申请人： PPG IND OHIO INC
发明人： FINLEY JAMES J
IPC分类号： B01J21/06 , B01J35/02 , B01J37/02 , C03C17/34 , C23C14/02 , C23C14/08 , C23C14/18 , C23C14/58 , C30B23/04 , C30B29/16 , C03C17/00
CPC分类号： C23C14/5806 , C03C17/3417 , C03C2217/71 , C23C14/024 , C23C14/083 , C23C14/185 , C23C14/5853 , Y02T50/67
摘要： Hydrophilic and/or rutile and anatase titanium oxide are obtained by sputter depositing titanium metal oxide on a film of zirconium oxide in the cubic phase. Another technique is to deposit a titanium metal on a film of zinc oxide in the cubic phase and heating the coating in an oxidizing atmosphere to provide an anatase and/or rutile phase(s) of titanium oxide.
摘要翻译：通过在立方相中的氧化锆膜上溅射沉积钛金属氧化物来获得亲水和/或金红石和锐钛矿氧化钛。另一种技术是将钛金属沉积在立方相中的氧化锌膜上，并在氧化气氛中加热涂层以提供氧化钛的锐钛矿和/或金红石相。

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