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1. 发明申请

WO2013072819A1 METHOD AND DEVICE FOR PROCESSING WAFER SHAPED ARTICLES 审中-公开
标题翻译：用于处理波形形状的方法和装置
公开(公告)号：WO2013072819A1
公开(公告)日：2013-05-23
申请号：PCT/IB2012/056255
申请日：2012-11-08
申请人： LAM RESEARCH AG , LAM RESEARCH CORPORATION , KINOSHITA, Kei , ENGESSER, Philipp
发明人： KINOSHITA, Kei , ENGESSER, Philipp
IPC分类号： H01L21/465
CPC分类号： H01L21/6838 , B25B5/061 , H01L21/68728 , Y10T29/49998
摘要： A method and device for treating a wafer-shaped article utilizes a novel clamping mechanism, which permits wafer shift to be performed with reduced wear to the chuck pins. A wafer shaped article is rotated on a spin chuck that has a plurality of pins positioned at a periphery of the wafer shaped article. The pins each have a head portion which, in a service position, extends radially inwardly of and above the wafer shaped article. Gas is supplied onto a surface of the wafer shaped article facing the spin chuck at a flow rate sufficient to displace the wafer shaped article upwardly into contact with the head portions of the pins. This serves to clamp the wafer shaped article against the head portions of the pins. However, the pins contact the wafer shaped article only on upwardly oriented wafer surfaces and the wafer shaped article is supported from below solely by the gas flow.
摘要翻译：用于处理晶片状制品的方法和装置利用了一种新颖的夹紧机构，其允许以较低的卡盘销磨损进行晶片移位。在旋转卡盘上旋转晶片成形制品，该旋转卡盘具有定位在晶片成形制品周边的多个销。每个销都具有头部，该头部在使用位置中延伸到晶片成形制品的径向内侧和上方。将气体以足以将晶片成形制品向上移动以与销头部接触的流量供给到面向旋转卡盘的晶片成形制品的表面上。这用于将晶片成形制品夹紧在销的头部上。然而，引脚仅在向上取向的晶片表面上接触晶片成形制品，并且晶片成形制品仅由气流从下方支撑。

2. 发明申请

WO2007054377A1 METHOD FOR DRYING A SURFACE 审中-公开
标题翻译：干燥表面的方法
公开(公告)号：WO2007054377A1
公开(公告)日：2007-05-18
申请号：PCT/EP2006/061522
申请日：2006-04-11
申请人： SEZ AG , KINOSHITA, Kei , ENGESSER, Philipp
发明人： KINOSHITA, Kei , ENGESSER, Philipp
IPC分类号： B08B3/02 , H01L21/687 , H01L21/306
CPC分类号： H01L21/02052 , B08B3/02 , H01L21/67034
摘要： Disclosed is a method for drying a surface of a disc-shaped article comprising covering said surface with a rinsing liquid, whereby a closed liquid layer (L) is formed, and removing said rinsing liquid, wherein said rinsing liquid containing at least 50wt.% water and at least 5wt.% of a substance, wherein the substance lowers the surface energy of water, wherein said removing of the liquid is initiated by blowing gas onto said closed liquid layer, whereby the closed liquid layer is opened at on discrete area (A) .
摘要翻译：公开了一种用于干燥盘形制品的表面的方法，包括用冲洗液覆盖所述表面，由此形成封闭的液体层（L），并除去所述冲洗液体，其中所述漂洗液体含有至少50重量％水和至少5重量％的物质，其中所述物质降低水的表面能，其中通过将气体吹送到所述封闭液体层上而引发液体的除去，由此在离散区域上打开封闭的液体层（一个）。

3. 发明申请

WO2010150135A2 METHOD FOR TREATING A SEMICONDUCTOR WAFER 审中-公开
标题翻译：用于处理半导体波长的方法
公开(公告)号：WO2010150135A2
公开(公告)日：2010-12-29
申请号：PCT/IB2010/052649
申请日：2010-06-14
申请人： LAM RESEARCH AG , LAM RESEARCH CORPORATION , KINOSHITA, Kei
发明人： KINOSHITA, Kei
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L21/31111 , H01L21/02071 , H01L29/513 , H01L29/517
摘要： Disclosed is a method for treating semiconductor wafer comprising: - providing a layer that contains lanthanum oxide or a lanthanide oxide (e.g. Dy 2 O 3 , Pr 2 O 3 , Ce 2 O 3 ) - applying an aqueous solution, wherein the aqueous solution is carbonated water, whereby the layer that contains lanthanum oxide or a lanthanide oxide is removed at specific areas, so that the surface, on which the layer that contains lanthanum oxide or a lanthanide oxide has been deposited, is exposed.
摘要翻译：公开了一种处理半导体晶片的方法，包括： - 提供包含氧化镧或镧系元素氧化物（例如Dy 2 O 3，Pr 2 O 3，Ce 2 O 3） - 施加水溶液的层，其中所述水溶液是碳酸水，由此含有镧的层氧化物或镧系元素氧化物在特定区域被去除，使得其上沉积有包含氧化镧或镧系元素氧化物的层的表面被暴露。

4. 发明申请

WO2010150135A3 METHOD FOR TREATING A SEMICONDUCTOR WAFER 审中-公开
标题翻译：用于处理半导体波长的方法
公开(公告)号：WO2010150135A3
公开(公告)日：2011-05-12
申请号：PCT/IB2010052649
申请日：2010-06-14
申请人： LAM RES AG , LAM RES CORP , KINOSHITA KEI
发明人： KINOSHITA KEI
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L21/31111 , H01L21/02071 , H01L29/513 , H01L29/517
摘要： Disclosed is a method for treating semiconductor wafer comprising: - providing a layer that contains lanthanum oxide or a lanthanide oxide (e.g. Dy2O3, Pr2O3, Ce2O3) - applying an aqueous solution, wherein the aqueous solution is carbonated water, whereby the layer that contains lanthanum oxide or a lanthanide oxide is removed at specific areas, so that the surface, on which the layer that contains lanthanum oxide or a lanthanide oxide has been deposited, is exposed.
摘要翻译：公开了一种处理半导体晶片的方法，包括： - 提供包含氧化镧或镧系元素氧化物（例如Dy 2 O 3，Pr 2 O 3，Ce 2 O 3） - 施加水溶液的层，其中所述水溶液是碳酸水，由此含有镧的层氧化物或镧系元素氧化物在特定区域被去除，使得其上沉积有包含氧化镧或镧系元素氧化物的层的表面被暴露。

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