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    • 4. 发明申请
    • PHYSICAL VAPOR DEPOSITION (PVD) AND COLD ANODIZATION METAL COLORING
    • 物理蒸气沉积(PVD)和冷沉淀金属色彩
    • WO2011063310A2
    • 2011-05-26
    • PCT/US2010057537
    • 2010-11-20
    • LAIRD TECHNOLOGIES INCZHAO RUINIEDERKORN REED JOHNZHENG KANWANG JUNLIU XIANQIU
    • ZHAO RUINIEDERKORN REED JOHNZHENG KANWANG JUNLIU XIANQIU
    • C25D11/26C23C14/14C25D11/22
    • C25D11/26C23C14/0015C23C14/028C23C14/16C23C14/5846
    • Exemplary embodiments of the present disclosure include colored metallic articles, which may include cold anodized, niobium-coated metallic substrates. Also disclosed herein are exemplary embodiments of methods relating to and/or for providing colored metallic articles, which may include cold anodized, niobium-coated metallic substrates. In an example embodiment, an article generally includes an anodized, niobium-coated metallic substrate having a hardness equal to or greater than about 350 HV (the Vickers Diamond Pyramid Hardness Number). An exemplary embodiment of a method generally includes anodizing a niobium-coated metallic substrate, such as to a hardness equal to or greater than about 350 HV (Vickers Diamond Pyramid Hardness Number) and/or at a temperature within a temperature range from about 0 degrees Celsius to about 5 degrees Celsius and with an electrical current within an electrical current range not exceeding about 1.5 Amps.
    • 本公开的示例性实施例包括着色金属制品,其可以包括冷阳极化,铌涂覆的金属基底。 本文还公开了涉及和/或用于提供着色金属制品的方法的示例性实施方案,其可以包括冷阳极化,铌涂覆的金属基材。 在一个示例性实施例中,制品通常包括具有等于或大于约350HV(维氏钻石金字塔硬度值)的硬度的阳极氧化的铌涂覆的金属基底。 方法的示例性实施方案通常包括阳极氧化铌涂覆的金属基底,例如达到等于或大于约350HV(维氏金刚石金字塔硬度值)的硬度和/或在约0度的温度范围内的温度 摄氏度至约5摄氏度,电流范围不超过约1.5安培。
    • 8. 发明申请
    • HIGH TEMPERATURE RESISTANT SOLID STATE PRESSURE SENSOR
    • 耐高温固体压力传感器
    • WO2008036701A2
    • 2008-03-27
    • PCT/US2007078831
    • 2007-09-19
    • ROSEMOUNT AEROSPACE INCGUO SHUWENERIKSEN ODD HARALD STEENPOTASEK DAVID P
    • GUO SHUWENERIKSEN ODD HARALD STEENPOTASEK DAVID P
    • C23C14/021C23C14/022C23C14/025C23C14/0682C23C14/5806C23C14/5846C23C14/5873G01L9/0042G01L19/0061G01L19/0609G01L19/147H01L2224/48472
    • A harsh environment transducer including a substrate having a first surface and a second surface, wherein the second surface is in communication with the environment. The transducer includes a device layer sensor means located on the substrate for measuring a parameter associated with the environment. The sensor means including a single crystal semiconductor material having a thickness of less than about 0.5 microns. The transducer further includes an output contact located on the substrate and in electrical communication with the sensor means. The transducer includes a package having an internal package space and a port for communication with the environment. The package receives the substrate in the internal package space such that the first surface of the substrate is substantially isolated from the environment and the second surface of the substrate is substantially exposed to the environment through the port. The transducer further includes a connecting component coupled to the package and a wire electrically connecting the connecting component and the output contact such that an output of the sensor means can be communicated. An external surface of the wire is substantially platinum, and an external surface of at least one of the output contact and the connecting component is substantially platinum.
    • 一种恶劣环境换能器,包括具有第一表面和第二表面的基底,其中第二表面与环境连通。 换能器包括位于基板上的用于测量与环境有关的参数的装置层传感器装置。 传感器装置包括厚度小于约0.5微米的单晶半导体材料。 换能器还包括位于基板上并与传感器装置电连通的输出触点。 换能器包括具有内部封装空间和用于与环境通信的端口的封装。 该封装件在内部封装空间中容纳衬底,使得衬底的第一表面基本上与环境隔离,并且衬底的第二表面基本上通过端口暴露于环境中。 换能器还包括耦合到封装件的连接部件和将连接部件和输出触头电连接的导线,使得可以传送传感器装置的输出。 导线的外表面基本上是铂,并且输出触点和连接部件中的至少一个的外表面基本上是铂。
    • 9. 发明申请
    • INTEGRATED CIRCUIT DEVICE AND FABRICATION USING METAL-DOPED CHALCOGENIDE MATERIALS
    • 集成电路设备和使用金属聚合材料的制造
    • WO2003020998A2
    • 2003-03-13
    • PCT/US2002/027526
    • 2002-08-30
    • MICRON TECHNOLOGY, INC.
    • LI, JiutaoMCTEER, Allen
    • C23C14/18
    • C23C14/5846C23C14/0623C23C14/544H01L27/2409H01L45/085H01L45/1233H01L45/141H01L45/143H01L45/1658
    • Methods of forming metal-doped chalcogenide layers and devices containing such doped chalcogenide layers include using a plasma to induce diffusion of metal into a chalcogenide layer concurrently with metal deposition. The plasma contains at least one noble gas of low atomic weight, such as neon or helium. The plasma has a sputter yield sufficient to sputter a metal target and a UV component of its emitted spectrum sufficient to induce diffusion of the sputtered metal into the chalcogenide layer. Using such methods, a conductive layer can be formed on the doped chalcogenide layer (in situ. )In integrated circuit devices, such as non-volatile chalcogenide memory devices, doping of the chalcogenide layer concurrently with metal deposition and formation of a conductive layer (in situ )with the doping of the chalcogenide layer reduces contamination concerns and physical damage resulting from moving the device substrate from tool to tool, thus facilitating improved device reliability.a
    • 形成掺杂金属的硫族化物层的方法和包含这种掺杂的硫族化物层的器件包括使用等离子体来诱导金属与金属沉积同时扩散到硫族化物层中。 等离子体包含至少一种低原子量的惰性气体,例如氖或氦。 等离子体具有足以溅射金属靶的溅射产率和其发射光谱的UV分量足以引起溅射金属扩散到硫族化物层中。 使用这种方法,可以在掺杂的硫族化物层(原位)上形成导电层。在诸如非挥发性硫族化物存储器件的集成电路器件中,与金属沉积和形成导电层同时掺杂硫族化物层( 原位)随着硫族化物层的掺杂而减少了由于将器件基板从工具移动到工具而导致的污染问题和物理损坏,从而有助于提高器件的可靠性。