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    • 2. 发明申请
    • MICROMECHANICAL RESONATOR ARRAY AND METHOD FOR MANUFACTURING THEREOF
    • 微机电谐振器阵列及其制造方法
    • WO2012020173A1
    • 2012-02-16
    • PCT/FI2011/050711
    • 2011-08-11
    • Teknologian tutkimuskeskus VTTJAAKKOLA, AnttiPENSALA, TuomasKIIHAMÄKI, Jyrki
    • JAAKKOLA, AnttiPENSALA, TuomasKIIHAMÄKI, Jyrki
    • H03H3/007H03H9/24H03H9/02
    • H03H3/0072H03H3/0076H03H9/02448H03H9/2463H03H9/505H03H2009/02385H03H2009/02503H03H2009/2442
    • The invention relates to a microelectromechanical resonator and a method of manufacturing thereof. The resonator comprises at least two resonator elements (10A, 10B) made from semiconductor material, the resonator elements being arranged laterally with respect to each other as an array, at least one transducer element (12) coupled to said resonator elements (10A, 10B) and capable of exciting a resonance mode to the resonator elements (10A,10B). According to the invention, said at least one transducer element (12) is a piezoelectric transducer element arranged laterally with respect to the at least two resonator elements (10A, 10B) between the at least two resonator elements (10A, 10B) and adapted to excite to the resonator elements (10A, 10B) as said resonance mode a resonance mode whose resonance frequency is dependent essentially only on the C44 elastic parameter of the elastic modulus of the material of the resonator elements. By means of the invention, electrostatic actuation and problems associated therewith can be avoided and accurate resonators can be manufactured.
    • 本发明涉及一种微机电谐振器及其制造方法。 谐振器包括由半导体材料制成的至少两个谐振器元件(10A,10B),所述谐振器元件相对于彼此横向地布置为阵列;耦合到所述谐振器元件(10A,10B)的至少一个换能器元件 )并且能够激励谐振元件(10A,10B)的谐振模式。 根据本发明,所述至少一个换能器元件(12)是在所述至少两个谐振器元件(10A,10B)之间相对于所述至少两个谐振器元件(10A,10B)横向布置的压电换能器元件,并适于 作为谐振模式将谐振模式激励到谐振器元件(10A,10B),谐振模式的谐振频率基本上仅取决于谐振器元件的材料的弹性模量的C44弹性参数。 通过本发明,可以避免静电致动和与之相关的问题,并且可以制造精确的谐振器。
    • 6. 发明申请
    • TEMPERATURE COMPENSATED BEAM RESONATOR
    • 温度补偿光束谐振器
    • WO2016051022A1
    • 2016-04-07
    • PCT/FI2015/050657
    • 2015-10-02
    • TEKNOLOGIAN TUTKIMUSKESKUS VTT OY
    • JAAKKOLA, AnttiPEKKO, PanuPRUNNILA, MikaPENSALA, Tuomas
    • H03H9/24H03H9/02
    • H03H9/02448H03H3/0076H03H9/2405H03H9/2447H03H2009/241
    • The invention provides a microelectromechanical resonator device comprising a support structure and a resonator manufactured on a (100) or (110) semiconductor wafer, wherein the resonator is suspended to the support structure and comprises at least one beam being doped to a doping concentration of 1.1*10 20 cm -3 or more with an n-type doping agent and is being capable of resonating in a length-extensional, flexural resonance or torsional mode upon suitable actuation. In particular, the doping concentration and angle of the beam are chosen so as to simultaneously produce zero or close to zero second order TCF, and even more preferably zero or close to zero first and second order TCFs, for the resonator in said resonance mode, thus providing a temperature stable resonator.
    • 本发明提供一种微机电谐振器装置,其包括在(100)或(110)半导体晶片上制造的支撑结构和谐振器,其中所述谐振器悬挂于所述支撑结构,并且包括掺杂至掺杂浓度为1.1 * 1020cm-3以上的n型掺杂剂,并且在适当的致动下能够以长度拉伸的弯曲共振或扭转模式共振。 特别地,选择光束的掺杂浓度和角度,以便在所述共振模式中为谐振器同时产生零或接近零二阶TCF,甚至更优选为零或接近零的一阶和二阶TCF, 从而提供温度稳定的谐振器。
    • 8. 发明申请
    • MICROMECHANICAL RESONATOR
    • 微机械谐振器
    • WO2018002439A1
    • 2018-01-04
    • PCT/FI2017/050486
    • 2017-06-29
    • TEKNOLOGIAN TUTKIMUSKESKUS VTT OY
    • JAAKKOLA, AnttiPEKKO, Panu
    • H03H9/24H03H9/02
    • The present disclosure describes a micromechanical resonator comprising a resonator element (40) having a length ( l 1 ) and a width ( w 1 ) that is perpendicular to the length. The resonator element has a length-to-width aspect ratio in a range of 1,8 to 2,2. The resonator element is suspended to a support structure with two or more anchors (41, 43). Each of the two or more anchors is attached to a first location or a second location. The first location is at a shorter side (42) of the resonator element. The first location divides the width ( w 1 ) of the resonator element into a larger portion ( w 3 ) and a smaller portion ( w 2 ) such that a ratio between said smaller portion ( w 2 ) and the whole width ( w 1 ) is in a range of 0,10 to 0,28. The second location is at a longer side (44). The second location divides the length ( l 1 ) of the resonator element into a larger portion ( l 3 ) and a smaller portion ( l 2 ) such that a ratio between said smaller portion ( l 2 ) and the whole length ( l 1 ) is in a range of 0,36 to 0,48.
    • 本公开描述了一种微机械谐振器,该微机械谐振器包括具有长度(1/1) i> )和与长度垂直的宽度(< i> 1 )。 谐振器元件具有在1,8至2,2范围内的长宽比。 谐振器元件利用两个或更多个锚(41,43)悬挂到支撑结构。 两个或更多个锚中的每一个都连接到第一位置或第二位置。 第一位置在谐振器元件的较短侧(42)处。 第一个位置将谐振器元件的宽度(i = 1/2)分成一个较大的部分( (例如,小于3分之一)和小部分(小于2分之一) 这样,所述较小部分(w2)与所述较小部分(w2) / i>)和整个宽度(w 1 )在0,10到0的范围内 28。 第二个位置在较长的一侧(44)。 第二位置将谐振器元件的长度(l 1 / l)分成较大的部分( 1 (小于3分之一)和较小部分(小于1分之一)的情况下, 使得所述较小部分(1≤i≤2)与所述较小部分(1≤i≤2)之间的比值小于所述较小部分 / i>)和整个长度(i 1 )在0.36到0的范围内 ,48。
    • 10. 发明申请
    • TEMPERATURE COMPENSATED PLATE RESONATOR
    • 温度补偿板谐振器
    • WO2016051025A1
    • 2016-04-07
    • PCT/FI2015/050661
    • 2015-10-02
    • TEKNOLOGIAN TUTKIMUSKESKUS VTT OY
    • JAAKKOLA, AnttiPEKKO, PanuPRUNNILA, MikaPENSALA, Tuomas
    • H03H9/02H03H9/24
    • H03H9/17H01L41/18H03H9/02448H03H9/2436H03H2009/02503H03H2009/02527H03H2009/2442
    • The invention relates to a microelectromechanical resonator device comprising a support structure and a semiconductor resonator plate doped to a doping concentration with an n-type doping agent and being capable of resonating in a width-extensional resonance mode In addition, there is at least one anchor suspending the resonator plate to the support structure and an actuator for exciting the width-extensional resonance mode into the resonator plate. According to the invention, the resonator plate is doped to a doping concentration of 1.2*10 20 cm -3 or more and has a shape which, in combination with said doping concentration and in said width-extensional resonance mode, provides the second order temperature coefficient of frequency (TCF 2 ) to be 12 ppb/C 2 or less at least at one temperature. Several practical implementations are presented.
    • 本发明涉及一种微机电谐振器装置,其包括支撑结构和掺杂到具有n型掺杂剂的掺杂浓度并且能够以宽 - 拉伸共振模式谐振的半导体谐振器板。此外,存在至少一个锚 将谐振器板悬挂到支撑结构上,以及致动器,用于将宽 - 拉伸谐振模式激励到谐振器板中。 根据本发明,谐振器板被掺杂到1.2×10 20 cm -3以上的掺杂浓度,并且具有与所述掺杂浓度结合并且在所述宽度 - 拉伸共振模式下提供二阶温度系数的形状 的频率(TCF2)至少在一个温度下为12ppb / C2或更小。 介绍了几个实际的实现。