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1. 发明申请

WO2011141342A1 MICROELECTROMECHANICAL RESONATOR AND A METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：微电子谐振器及其制造方法
公开(公告)号：WO2011141342A1
公开(公告)日：2011-11-17
申请号：PCT/EP2011/057178
申请日：2011-05-05
申请人： TEKNOLOGIAN TUTKIMUSKESKUS VTT , PENSALA, Tuomas , JAAKKOLA, Antti
发明人： PENSALA, Tuomas , JAAKKOLA, Antti
IPC分类号： H03H3/007 , H03H9/24
CPC分类号： H03H3/0076 , H03H9/1057 , H03H9/2436 , H03H2009/02503 , H03H2009/2442
摘要： The invention relates to temperature compensated microelectro-mechanical (MEMS) resonators (300) preferably made of silicon Prior art MEMS resonators have a significant temperature coefficient of resonance frequency, whereby it is difficult to achieve a sufficiently good frequency stability. The inventive MEMS resonator has a resonance plate (310) which resonates in Lamé mode. The resonance plate is p+ doped material, such as silicon doped with boron, and the concentrationof the p+ doping is such that the plate has a temperature coefficient of resonance frequency near to zero. The tensile stress and the second order temperature coefficient can further be reduced by doping the plate with germanium.
摘要翻译：本发明涉及优选由硅制成的温度补偿微电机械（MEMS）谐振器（300）。现有技术的MEMS谐振器具有显着的谐振频率温度系数，从而难以实现足够好的频率稳定性。本发明的MEMS谐振器具有以Lamé模式谐振的谐振板（310）。共振板是p +掺杂材料，例如掺杂硼的硅，并且p +掺杂的浓度使得该板具有接近于零的共振频率的温度系数。通过用锗掺杂板可以进一步降低拉伸应力和二次温度系数。

2. 发明申请

WO2012110708A1 NOVEL MICROMECHANICAL DEVICES 审中-公开
标题翻译：新型微生物装置
公开(公告)号：WO2012110708A1
公开(公告)日：2012-08-23
申请号：PCT/FI2012/050157
申请日：2012-02-17
申请人： TEKNOLOGIAN TUTKIMUSKESKUS VTT , PENSALA, Tuomas , JAAKKOLA, Antti , GANCHENKOVA, Maria , PRUNNILA, Mika , KIIHAMÄKI, Jyrki
发明人： PENSALA, Tuomas , JAAKKOLA, Antti , GANCHENKOVA, Maria , PRUNNILA, Mika , KIIHAMÄKI, Jyrki
IPC分类号： H03H9/02 , H03H3/007 , B81B3/00
CPC分类号： H03H9/02448 , B81B3/0078 , B81B2201/0271 , H01L41/18 , H03H3/0072 , H03H3/0076 , H03H9/2405 , H03H9/2447 , H03H2009/02503 , H03H2009/02519 , H03H2009/241 , H03H2009/2442 , Y10T29/42
摘要： The invention concerns a micromechanical device and method of manufacturing thereof. The device comprises an oscillating or deflecting element (16) made of semiconductor material comprising n-type doping agent and excitation or sensing means (10, 14) functionally connected to said oscillating or deflecting element (16). According to the invention, the oscillating or deflecting element (16) is essentially homogeneously doped with said n-type doping agent. The invention allows for designing a variety of practical resonators having a low temperature drift.
摘要翻译：本发明涉及一种微机械装置及其制造方法。该装置包括由半导体材料制成的振荡或偏转元件（16），其包括n型掺杂剂和功能性地连接到所述振荡或偏转元件（16）的激励或感测装置（10,14）。根据本发明，振荡或偏转元件（16）基本均匀地掺杂有所述n型掺杂剂。本发明允许设计具有低温度漂移的各种实用谐振器。

3. 发明申请

WO2012156585A1 MICROMECHANICAL DEVICE AND METHOD OF DESIGNING THEREOF 审中-公开
标题翻译：微机电设备及其设计方法
公开(公告)号：WO2012156585A1
公开(公告)日：2012-11-22
申请号：PCT/FI2012/050456
申请日：2012-05-11
申请人： TEKNOLOGIAN TUTKIMUSKESKUS VTT , PRUNNILA, Mika , JAAKKOLA, Antti , PENSALA, Tuomas
发明人： PRUNNILA, Mika , JAAKKOLA, Antti , PENSALA, Tuomas
IPC分类号： H03H9/02 , H03H9/24 , B81B3/00
CPC分类号： B81B3/0072 , B81B2201/0235 , B81B2201/0242 , B81B2201/0271 , B81C2201/0164 , B81C2201/0167 , B81C2201/0177 , G06F17/5045 , H03H9/02448 , H03H9/2447 , H03H2009/2442
摘要： The invention relates to a micromechanical device comprising a semiconductor element capable of deflecting or resonating and comprising at least two regions having different material properties and drive or sense means functionally coupled to said semiconductor element. According to the invention, at least one of said regions comprises one or more n-type doping agents, and the relative volumes, doping concentrations, doping agents and/or crystal orientations of the regions being configured so that the temperature sensitivities of the generalized stiffness are opposite in sign at least at one temperature for the regions, and the overall temperature drift of the generalized stiffness of the semiconductor element is 50 ppm or less on a temperature range of 100°C. The device can be a resonator. Also a method of designing the device is disclosed.
摘要翻译：本发明涉及一种微机械装置，其包括能够偏转或谐振并且包括具有不同材料特性的至少两个区域的半导体元件和功能性耦合到所述半导体元件的驱动或感测装置。根据本发明，所述区域中的至少一个包括一种或多种n型掺杂剂，并且所述区域的相对体积，掺杂浓度，掺杂剂和/或晶体取向被构造成使得广义刚度的温度敏感度至少在区域的一个温度下符号相反，半导体元件的整体刚度的总体温度漂移在100℃的温度范围内为50ppm以下。该器件可以是谐振器。还公开了一种设计该设备的方法。

4. 发明申请

WO2012020173A1 MICROMECHANICAL RESONATOR ARRAY AND METHOD FOR MANUFACTURING THEREOF 审中-公开
标题翻译：微机电谐振器阵列及其制造方法
公开(公告)号：WO2012020173A1
公开(公告)日：2012-02-16
申请号：PCT/FI2011/050711
申请日：2011-08-11
申请人： Teknologian tutkimuskeskus VTT , JAAKKOLA, Antti , PENSALA, Tuomas , KIIHAMÄKI, Jyrki
发明人： JAAKKOLA, Antti , PENSALA, Tuomas , KIIHAMÄKI, Jyrki
IPC分类号： H03H3/007 , H03H9/24 , H03H9/02
CPC分类号： H03H3/0072 , H03H3/0076 , H03H9/02448 , H03H9/2463 , H03H9/505 , H03H2009/02385 , H03H2009/02503 , H03H2009/2442
摘要： The invention relates to a microelectromechanical resonator and a method of manufacturing thereof. The resonator comprises at least two resonator elements (10A, 10B) made from semiconductor material, the resonator elements being arranged laterally with respect to each other as an array, at least one transducer element (12) coupled to said resonator elements (10A, 10B) and capable of exciting a resonance mode to the resonator elements (10A,10B). According to the invention, said at least one transducer element (12) is a piezoelectric transducer element arranged laterally with respect to the at least two resonator elements (10A, 10B) between the at least two resonator elements (10A, 10B) and adapted to excite to the resonator elements (10A, 10B) as said resonance mode a resonance mode whose resonance frequency is dependent essentially only on the C44 elastic parameter of the elastic modulus of the material of the resonator elements. By means of the invention, electrostatic actuation and problems associated therewith can be avoided and accurate resonators can be manufactured.
摘要翻译：本发明涉及一种微机电谐振器及其制造方法。谐振器包括由半导体材料制成的至少两个谐振器元件（10A，10B），所述谐振器元件相对于彼此横向地布置为阵列;耦合到所述谐振器元件（10A，10B）的至少一个换能器元件）并且能够激励谐振元件（10A，10B）的谐振模式。根据本发明，所述至少一个换能器元件（12）是在所述至少两个谐振器元件（10A，10B）之间相对于所述至少两个谐振器元件（10A，10B）横向布置的压电换能器元件，并适于作为谐振模式将谐振模式激励到谐振器元件（10A，10B），谐振模式的谐振频率基本上仅取决于谐振器元件的材料的弹性模量的C44弹性参数。通过本发明，可以避免静电致动和与之相关的问题，并且可以制造精确的谐振器。

5. 发明申请

WO2012020172A1 MICROMECHANICAL RESONATOR AND METHOD FOR MANUFACTURING THEREOF 审中-公开
标题翻译：微机电谐振器及其制造方法
公开(公告)号：WO2012020172A1
公开(公告)日：2012-02-16
申请号：PCT/FI2011/050710
申请日：2011-08-11
申请人： Teknologian tutkimuskeskus VTT , JAAKKOLA, Antti , PENSALA, Tuomas
发明人： JAAKKOLA, Antti , PENSALA, Tuomas
IPC分类号： H03H3/013 , H03H9/02 , H03H9/24 , B81B3/00
CPC分类号： H03H9/19 , H03H3/013 , H03H9/02448 , H03H2009/02496 , H03H2009/02511 , H03H2009/02519 , H03H2009/2442 , Y10T29/41
摘要： The invention relates to a temperature compensated micromechanical resonator and method of manufacturing thereof. The resonator comprises a resonator element comprising a semiconductor crystal structure, which is doped so as to reduce its temperature coefficient of frequency, transducer means for exciting to the resonator element a vibrational mode. According to the invention the crystal orientation and shape of the resonator element are chosen to allow for a shear mode having a saddle point to be excited to the resonator element, and said transducer means are adapted to excite said shear mode to the resonator element. Accurate micromechanical resonators with low temperature drift can be achieved by means of the invention.
摘要翻译：本发明涉及一种温度补偿微机械谐振器及其制造方法。谐振器包括谐振元件，其包括被掺杂以便降低其频率的温度系数的半导体晶体结构，用于激励谐振器元件的振动模式的振动器装置。根据本发明，谐振器元件的晶体取向和形状被选择为允许具有鞍点的剪切模式被激发到谐振器元件，并且所述换能器装置适于将谐振器元件的所述剪切模式激发。通过本发明可以实现具有低温度漂移的精确的微机械谐振器。

6. 发明申请

WO2012049374A1 BALANCED-UNBALANCED FILTER BASED ON LATERALLY COUPLED BAW THIN FILMS 审中-公开
标题翻译：基于横向耦合薄膜的平衡不平衡滤波器
公开(公告)号：WO2012049374A1
公开(公告)日：2012-04-19
申请号：PCT/FI2011/050895
申请日：2011-10-14
申请人： TEKNOLOGIAN TUTKIMUSKESKUS VTT , MELTAUS, Johanna , PENSALA, Tuomas , YLILAMMI, Markku
发明人： MELTAUS, Johanna , PENSALA, Tuomas , YLILAMMI, Markku
IPC分类号： H03H3/02 , H03H9/56
CPC分类号： H03H9/0095 , H03H3/04 , H03H9/562 , H03H9/564
摘要： The invention describes an acoustic balanced-unbalanced (balun) or balanced-balanced thin-film BAW filter based on lateral acoustic coupling. In laterally acoustically coupled thin- film BAW filters (LBAW) one can realize transformation from unbalanced to balanced electric signal if the electrodes of the balanced port are placed on the opposite sides of the piezoelectric film. The manufacturing process is simpler than in the corresponding component based on vertical acoustical coupling. The device can also realize impedance transformation.
摘要翻译：本发明描述了基于横向声耦合的声平衡不平衡（balun）或平衡平衡薄膜BAW滤波器。在横向声耦合薄膜BAW滤波器（LBAW）中，如果平衡端口的电极放置在压电薄膜的相对两侧，则可以实现从不平衡到平衡电信号的转换。制造过程比基于垂直声耦合的相应部件更简单。该器件还可实现阻抗变换。

7. 发明申请

WO2012049373A1 CHANGING OPERATION FREQUENCY IN A LBAW FILTER 审中-公开
标题翻译：更改LBAW过滤器中的操作频率
公开(公告)号：WO2012049373A1
公开(公告)日：2012-04-19
申请号：PCT/FI2011/050893
申请日：2011-10-14
申请人： TEKNOLOGIAN TUTKIMUSKESKUS VTT , MELTAUS, Johanna , PENSALA, Tuomas , YLILAMMI, Markku
发明人： MELTAUS, Johanna , PENSALA, Tuomas , YLILAMMI, Markku
IPC分类号： H03H3/04 , H03H9/02 , H03H9/54 , H01L41/22
CPC分类号： H03H9/564 , H03H3/04
摘要： In laterally coupled BAW (LBAW) filters, the center frequency is generally determined by the thin film stack thickness. However, it is possible to affect the operation frequency with the lateral dimensions of electrodes (13), e.g., electrode width (12). Therefore, it is possible to manufacture LBAW components on a single wafer having a general thickness with electrodes (13) of a different width (12). When the different electode widths (12) are based on the specific local thickness of each element and/or the desired center frequency it is possible to manufacture components on a single wafer with accurate and optionally predetermined different center frequencies.
摘要翻译：在横向耦合的BAW（LBAW）滤波器中，中心频率通常由薄膜叠层厚度决定。然而，可以用电极（13）的横向尺寸（例如电极宽度（12））来影响操作频率。因此，可以在具有不同宽度（12）的电极（13）的具有一般厚度的单个晶片上制造LBAW部件。当不同的电极宽度（12）基于每个元件的特定局部厚度和/或期望的中心频率时，可以在单个晶片上制造具有精确且可选地预定的不同中心频率的部件。

8. 发明申请

WO2012049372A1 WIDE-BAND ACOUSTICALLY COUPLED THIN-FILM BAW FILTER 审中-公开
标题翻译：宽带超声波耦合薄膜滤波器
公开(公告)号：WO2012049372A1
公开(公告)日：2012-04-19
申请号：PCT/FI2011/050891
申请日：2011-10-14
申请人： Teknologian tutkimuskeskus VTT , MELTAUS, Johanna , PENSALA, Tuomas
发明人： MELTAUS, Johanna , PENSALA, Tuomas
IPC分类号： H03H9/56 , H03H3/02
CPC分类号： H03H9/547 , H03H9/564 , H03H9/568
摘要： The invention relates to an acoustically coupled thin-film BAW filter, comprising a piezoelectric layer (1), an input-port (2) on the piezoelectric layer(1) changing electrical signal into an acoustic wave (SAW, BAW), and an output-port (3) on the piezoelectric layer(1) changing acoustic signal into electrical signal. In accordance with the invention the ports (2, 3) include electrodes (5, 6) positioned close to each other, and the filter is designed to operate in first order thickness-extensional TE1 mode.
摘要翻译：本发明涉及一种声耦合薄膜BAW滤波器，包括压电层（1），压电层（1）上的输入端口（2），将电信号改变成声波（SAW，BAW），以及压电层（1）上的输出端口（3）将声信号改变为电信号。根据本发明，端口（2,3）包括彼此靠近定位的电极（5,6），并且滤波器被设计成以一级厚度 - 延伸TE1模式操作。

9. 发明申请

WO2011131844A1 WIDE-BAND ACOUSTICALLY COUPLED THIN-FILM BAW FILTER 审中-公开
标题翻译：宽带超声波耦合薄膜滤波器
公开(公告)号：WO2011131844A1
公开(公告)日：2011-10-27
申请号：PCT/FI2011/050368
申请日：2011-04-21
申请人： TEKNOLOGIAN TUTKIMUSKESKUS VTT , MELTAUS, Johanna , PENSALA, Tuomas
发明人： MELTAUS, Johanna , PENSALA, Tuomas
IPC分类号： H03H9/02 , H03H9/205 , H03H9/56 , H03H9/58
CPC分类号： H03H9/02228 , H03H9/0095 , H03H9/02007 , H03H9/02125 , H03H9/175 , H03H9/177 , H03H9/205 , H03H9/564 , H03H9/584 , H03H2003/0414 , Y10T29/42
摘要： In a bulk acoustic wave (BAW) filter based on laterally acoustically coupled resonators on piezoelectric thin films, one can utilize two distinct acoustic plate wave modes of different nature, for example the thickness extensional (longitudinal) TE1 and the second harmonic thickness shear (TS2) mode to form a bandpass response. The invention is based on the excitation of at least two lateral standing wave resonances belonging to different plate wave modes that facilitate the transmission of signal. The passband is designed by tailoring the wave propagation characteristics in the device such that the resonances are excited at suitable frequencies to form a passband of a desired shape. The bandwidth of the filter described herein may therefore be more than twice that of the existing state-of-the-art microacoustic filters. Consequently, it has significant commercial and technological value.
摘要翻译：在基于压电薄膜上的横向声耦合谐振器的体声波（BAW）滤波器中，可以利用不同性质的两种不同的声板波模，例如厚度延伸（纵向）TE1和二次谐波厚度剪切（TS2 ）模式以形成带通响应。本发明基于属于促进信号传输的不同平板波模式的至少两个横向驻波共振的激发。该通带是通过调整装置中的波传播特性来设计的，使得谐振在合适的频率被激发以形成所需形状的通带。因此，这里描述的滤波器的带宽可以是现有的最先进的微声滤波器的两倍以上。因此，具有重要的商业和技术价值。

10. 发明申请

WO2022096790A1 PIEZOELECTRIC ULTRASONIC TRANSDUCER AND SYSTEM 审中-公开
公开(公告)号：WO2022096790A1
公开(公告)日：2022-05-12
申请号：PCT/FI2021/050755
申请日：2021-11-08
申请人： TEKNOLOGIAN TUTKIMUSKESKUS VTT OY
发明人： KARUTHEDATH, Cyril , THANNIYIL, Abhilash , SILLANPÄÄ, Teuvo , PENSALA, Tuomas
IPC分类号： B06B1/06 , H01L41/09
摘要： There is provided an ultrasonic transducer (100) configured to provide passive temperature compensation for a stable operation over a wide bandwidth. The ultrasonic transducer comprises a cavity (102) for communications of ultrasonic waves and a membrane (104) supported movable between walls (103) of the cavity (102). The membrane (104) comprises a structural layer (106) on a side of the membrane (104) towards the cavity (102) and a piezoelectric layer (108)attached to the structural layer (106) on an opposite side of the membrane (104)with respect to the cavity (102). Temperature coefficients of Young's modulus of the structural layer (106) and the piezoelectric layer (108) have opposite signs or passive temperature compensation of operating frequency of the piezoelectric ultrasonic transducer (100).

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