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1. 发明申请

WO2004112126A1 A METHOD OF PREPARATION OF AN EPITAXIAL SUBSTRATE 审中-公开
标题翻译：一种外源基质的制备方法
公开(公告)号：WO2004112126A1
公开(公告)日：2004-12-23
申请号：PCT/EP2004/005439
申请日：2004-05-19
申请人： S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES S.A. , FAURE, Bruce
发明人： FAURE, Bruce
IPC分类号： H01L21/78
CPC分类号： C30B25/183 , H01L21/76254 , Y10S117/915
摘要： The invention relates to a method of preparation of an epitaxial substrate, in particular a GaN, a SiGe, AIN or InN epitaxial substrate. It is the object of the present invention to provide a process of preparation of an epitaxial substrate which further reduces the influence of the substrate while being at the same time economically viable. The object is solved by providing a base substrate, implanting atomic species in the base substrate to create a weak layer like zone, providing an epitaxial stiffening layer on a surface of a base substrate at a first temperature and isolating the stiffening layer at a second higher temperature, in particular together with a sub-layer of the base substrate, from the remainder of the base substrate, whereby the isolated material creates a pseudo substrate on which a homo- or heteroepitaxial layer is provided.
摘要翻译：本发明涉及外延衬底，特别是GaN，SiGe，AlN或InN外延衬底的制备方法。本发明的目的是提供一种外延衬底的制备方法，其进一步降低了衬底的影响，同时在经济上是可行的。该目的通过提供一种基底衬底来解决，在基底衬底中注入原子物质以产生类似薄层的区域，在第一温度下在基底衬底的表面上提供外延加强层，并在第二高度隔离加强层温度，特别是与基底衬底的子层一起，与基底衬底的其余部分相结合，从而隔离材料产生伪衬底，在其上提供均一或异质外延层。

2. 发明申请

WO2010015301A8 PASSIVATION OF ETCHED SEMICONDUCTOR STRUCTURES 审中-公开
公开(公告)号：WO2010015301A8
公开(公告)日：2010-02-11
申请号：PCT/EP2009/004791
申请日：2009-07-02
申请人： S.O.I. TEC SILICON ON ISULATOR TECHNOLOGIES , FAURE, Bruce , GUENARD, Pascal
发明人： FAURE, Bruce , GUENARD, Pascal
IPC分类号： H01L21/762 , H01L21/324 , H01L21/20
摘要： The present invention relates to a method for passivation of a semiconductor structure, comprising the steps providing at least one first material layer; forming at least one second material layer that is to be patterned above the first material layer; forming a diffusion barrier layer between the at least one second material layer and the at least one first material layer thereby forming a multilayer stack and patterning, in particular, etching, the at least one second material layer down to but not completely through the diffusion barrier layer and without exposing portions of the at least one first material layer such that diffusion of material of the at least one first material layer through the diffusion barrier layer during a subsequent heat treatment of the multilayer stack is substantially prevented. The invention also relates to a method for passivation of a semiconductor structure, comprising the steps providing a multilayer stack comprising at least one buried layer formed below a second material layer; patterning, in particular, etching, the surface of the multilayer stack through the second material layer thereby exposing portions of the at least one buried layer and depositing a diffusion barrier layer at least on the exposed portions of the at least one buried layer such that diffusion of material of the at least one buried layer through the diffusion barrier layer during a subsequent heat treatment of the multilayer stack is substantially prevented.

3. 发明申请

WO2006000691A1 SUPPORT D'EPITAXIE HYBRIDE ET SON PROCEDE DE FABRICATION 审中-公开
标题翻译：混合外延支持及其制作方法
公开(公告)号：WO2006000691A1
公开(公告)日：2006-01-05
申请号：PCT/FR2005/001353
申请日：2005-06-02
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , FAURE, Bruce , LAHRECHE, Hacene
发明人： FAURE, Bruce , LAHRECHE, Hacene
IPC分类号： H01L21/762
CPC分类号： C30B33/00 , C30B29/36 , C30B29/403 , C30B29/406 , H01L21/76254 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： Procédé de réalisation d'un support d'épitaxie, comportant la formation, dans un premier substrat (2) de carbure de silicium (SiC) ou de nitrure de gallium (GaN) monocristallin conducteur, d'une couche (14) de carbure de silicium monocristallin isolant ou de nitrure de gallium monocristallin isolant. Le procédé comprend en outre le report de cette couche de carbure de silicium ou de nitrure de gallium monocristallin sur un deuxième substrat (4) en matériau céramique polycristallin ayant une conductivité thermique supérieure ou égale à 1,5 W.cm -1 .K -1 . Ce procédé permet de réaliser des composants électroniques économiques et performants, notamment pour des applications haute-fréquences de puissance.
摘要翻译：本发明涉及一种用于制造外延支撑件的方法，包括在第一单晶导电碳化硅（SiC）或单晶氮化镓（GaN）衬底，绝缘单晶碳化硅或绝缘单晶氮化镓层中形成。该方法还包括将所述单晶碳化硅或氮化镓层转移到由多晶陶瓷材料制成的第二衬底（4）上，所述多晶陶瓷材料具有不小于1.5W / cm 2的热导率。 -1 。该方法能够制造经济和有效的电子部件，特别是用于电力高频应用。

4. 发明申请

WO2010036622A1 METHODS OF FORMING RELAXED LAYERS OF SEMICONDUCTOR MATERIALS, SEMICONDUCTOR STRUCTURES, DEVICES AND ENGINEERED SUBSTRATES INCLUDING SAME 审中-公开
标题翻译：形成半导体材料的松散层的方法，半导体结构，器件和包括其中的工程衬底
公开(公告)号：WO2010036622A1
公开(公告)日：2010-04-01
申请号：PCT/US2009/057734
申请日：2009-09-21
申请人： S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES , PHILIPS LUMILEDS LIGHTING COMPANY, LLC , KONINKLIJKE PHILIPS ELECTRONICS N.V. , LETERTRE, Fabrice , FAURE, Bruce , KRAMES, Michael, R. , GARDNER, Nathan, F.
发明人： LETERTRE, Fabrice , FAURE, Bruce , KRAMES, Michael, R. , GARDNER, Nathan, F.
IPC分类号： H01L21/02
CPC分类号： H01L21/02639 , H01L21/02367 , H01L21/02389 , H01L21/02458 , H01L21/0254
摘要： Methods of fabricating relaxed layers of semiconductor materials include forming structures of a semiconductor material overlying a layer of a compliant material, and subsequently altering a viscosity of the compliant material to reduce strain within the semiconductor material. The compliant material may be reflowed during deposition of a second layer of semiconductor material. The compliant material may be selected so that, as the second layer of semiconductor material is deposited, a viscosity of the compliant material is altered imparting relaxation of the structures. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Methods of fabricating semiconductor structures and devices are also disclosed. Novel intermediate structures are formed during such methods. Engineered substrates include a plurality of structures comprising a semiconductor material disposed on a layer of material exhibiting a changeable viscosity.
摘要翻译：制造半导体材料的松弛层的方法包括形成覆盖柔性材料层的半导体材料的结构，随后改变柔性材料的粘度以减小半导体材料内的应变。在沉积第二层半导体材料期间，柔性材料可以回流。可以选择柔性材料，使得当沉积第二层半导体材料时，改变柔性材料的粘度赋予结构松弛性。在一些实施例中，半导体材料层可以包括III-V型半导体材料，例如氮化铟镓。还公开了制造半导体结构和器件的方法。在这种方法中形成了新的中间结构。工程衬底包括多个结构，其包括设置在表现出可变粘度的材料层上的半导体材料。

5. 发明申请

WO2007110515A2 PROCEDE DE DETACHEMENT D'UN FILM MINCE PAR FUSION DE PRECIPITES 审中-公开
标题翻译：通过熔化沉淀法分离薄膜的方法
公开(公告)号：WO2007110515A2
公开(公告)日：2007-10-04
申请号：PCT/FR2007/000534
申请日：2007-03-28
申请人： COMMISARIAT A L'ENERGIE ATOMIQUE (CEA) , S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , TAUZIN, Aurélie , FAURE, Bruce , GARNIER, Arnaud
发明人： TAUZIN, Aurélie , FAURE, Bruce , GARNIER, Arnaud
CPC分类号： H01L21/76254
摘要： Un procédé de fabrication d'un film mince à partir d'un substrat comporte les étapes suivantes : (1) implantation dans le substrat par exemple en silicium, d'ions d'une espèce non gazeuse, par exemple du gallium, cette espèce et les conditions d'implantation étant choisies, en fonction du matériau du substrat, en sorte de permettre la formation de précipités confinés en profondeur, répartis au sein d'une couche, ces précipités étant en une phase solide ayant une température de fusion inférieure à celle du substrat; (2) éventuelle mise en contact intime de cette face du substrat avec un raidisseur ; et (3) détachement d'un film mince par rupture du substrat au niveau de la couche de précipités par l'application d'une sollicitation de détachement, mécanique et/ou chimique, dans des conditions où les précipités sont en phase liquide.
摘要翻译：从衬底制造薄膜的方法包括以下步骤：（1）将诸如非气态物质的离子（例如镓）注入例如由硅制成的衬底中，注入条件并选择该物质根据基材的材料，使得形成一定范围的析出物，分布在一层内，这些沉淀物由熔点低于基底的固相制成; （2）衬底的该表面与加强件的任意的紧密接触; 和（3）通过在沉淀物处于液相的条件下施加机械和/或化学分解应力，通过在沉淀层处破碎基底来分离薄膜。

6. 发明申请

WO2007071771A1 METHOD FOR MAKING A COMPOSITE SUBSTRATE AND COMPOSITE SUBSTRATE ACCORDING TO SAID METHOD 审中-公开
标题翻译：用于制作复合基板和复合基板的方法
公开(公告)号：WO2007071771A1
公开(公告)日：2007-06-28
申请号：PCT/EP2006/070107
申请日：2006-12-21
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , BOUSSAGOL, Alice , DUPONT, Frédéric , FAURE, Bruce
发明人： BOUSSAGOL, Alice , DUPONT, Frédéric , FAURE, Bruce
IPC分类号： C30B29/40 , C30B33/00 , C30B25/02 , H01L21/762
CPC分类号： H01L21/76254 , Y10S117/915
摘要： The present invention relates to a method for making a composite substrate including a supporting substrate and a layer in a binary or ternary material, said method comprising the transfer of a so-called useful layer (1) of said binary or ternary material onto a receiving support (5) a so-called supporting substrate, characterized in that said binary or ternary material is non-cubic, semi-polar or non-polar material. Another object of the invention relates to a composite substrate for making electronic components of the like including a supporting substrate, a so-called receiving support (5) and a so-called useful layer (1) in a binary or ternary material, characterized in that said binary or ternary material is a non-cubic, semi-polar or non-polar material.
摘要翻译：本发明涉及一种制造复合衬底的方法，所述复合衬底包括支撑衬底和二元或三元材料中的层，所述方法包括将所述二元或三元材料的所谓有用层（1）转移到接收支撑（5）所谓的支撑衬底，其特征在于，所述二元或三元材料是非立方体，半极性或非极性材料。本发明的另一个目的涉及一种用于制造包括支撑衬底，所谓的接收支撑件（5）和所谓的二元或三元材料的有用层（1）的电子部件的复合衬底，其特征在于所述二元或三元材料是非立方体，半极性或非极性材料。

7. 发明申请

WO2010022814A1 STIFFENING LAYERS FOR THE RELAXATION OF STRAINED LAYERS 审中-公开
标题翻译：强化层的松散层
公开(公告)号：WO2010022814A1
公开(公告)日：2010-03-04
申请号：PCT/EP2009/004790
申请日：2009-07-02
申请人： S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES , FAURE, Bruce
发明人： FAURE, Bruce
IPC分类号： H01L21/84 , H01L21/20
CPC分类号： H01L21/02488 , H01L21/0242 , H01L21/0254 , H01L21/02664 , H01L21/84
摘要： The present invention relates to a method for relaxing a strained material layer, comprising providing a strained material layer and a low-viscosity layer formed on a first face of the strained material layer; forming a stiffening layer on at least one part of a second face of the strained material layer opposite to the first face thereby forming a multilayer stack; and subjecting the multilayer stack to a heat treatment thereby at least partially relaxing the strained material layer.
摘要翻译：本发明涉及一种松弛应变材料层的方法，包括提供在应变材料层的第一面上形成的应变材料层和低粘度层; 在所述应变材料层的与所述第一面相对的第二面的至少一部分上形成加强层，从而形成多层叠层; 并对多层叠层进行热处理，从而至少部分地松弛应变材料层。

8. 发明申请

WO2010015878A2 PROCESS FOR MODIFYING A SUBSTRATE 审中-公开
标题翻译：修改基板的工艺
公开(公告)号：WO2010015878A2
公开(公告)日：2010-02-11
申请号：PCT/IB2008/003101
申请日：2008-09-08
申请人： S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES , PHILIPS LUMILEDS LIGHTING COMPANY LLC , FAURE, Bruce , LETERTRE, Fabrice , WIERER, Jonathan, J., Jr.
发明人： FAURE, Bruce , LETERTRE, Fabrice , WIERER, Jonathan, J., Jr.
IPC分类号： H01L21/20 , H01L33/00 , H01L31/18 , H01L21/58 , H01L21/762 , H01L21/324
CPC分类号： H01L21/76251 , H01L21/6835 , H01L31/1892 , H01L33/0079 , H01L2221/68327 , H01L2221/68363 , H01L2221/68368 , H01L2221/68381 , Y02E10/50
摘要： The invention relates to a process for modifying a substrate (10) comprising: (a) providing an initial substrate (10) having a face (10b) for bonding and an opposing face (10r); (b) providing a support substrate (25); wherein either the bonding face (10b) of the initial substrate (10), and/or a face of the support substrate (25), is provided with an electromagnetic radiation absorbing layer (24), wherein the support substrate (25) is substantially transparent to a wavelength of electromagnetic radiation (c) performing bonding to join the bonding face (10b) of the initial substrate (10) to the support substrate (25) via the electromagnetic radiation absorbing layer (24); (e) carrying out irradiation of the electromagnetic radiation absorbing layer (24) through the substantially transparent support substrate (25) to induce separation of the support substrate (25).
摘要翻译：本发明涉及一种用于修改衬底（10）的方法，包括：（a）提供具有用于结合的面（10b）和相对面（10r）的初始衬底（10）; （b）提供支撑衬底（25）; 其中所述初始衬底（10）的接合面（10b）和/或所述支撑衬底（25）的表面中的任一个设置有电磁辐射吸收层（24），其中所述支撑衬底（25）基本上对电磁辐射的波长透明（c）进行接合以经由电磁辐射吸收层（24）将初始衬底（10）的接合面（10b）连接到支撑衬底（25）; （e）通过所述基本透明的支撑衬底（25）进行所述电磁辐射吸收层（24）的照射以引起所述支撑衬底（25）的分离。

9. 发明申请

WO2010015302A2 RELAXATION AND TRANSFER OF STRAINED LAYERS 审中-公开
标题翻译：应变层的松弛和转移
公开(公告)号：WO2010015302A2
公开(公告)日：2010-02-11
申请号：PCT/EP2009/004792
申请日：2009-07-02
申请人： S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES , LETERTRE, Fabrice , FAURE, Bruce , GUENARD, Pascal , KRAMES, Mike , MCLAURIN, Nelson , GARDNER, Nate
发明人： LETERTRE, Fabrice , FAURE, Bruce , GUENARD, Pascal , KRAMES, Mike , MCLAURIN, Nelson , GARDNER, Nate
IPC分类号： H01L21/20 , H01L33/00 , H01L31/18 , H01L21/58 , H01L21/762
CPC分类号： H01L33/0079 , H01L21/6835 , H01L31/1848 , H01L31/1852 , H01L31/1892 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L2221/68359 , Y02E10/544 , Y02P70/521
摘要： The present invention relates a method for the formation of at least partially relaxed strained material on a target substrate, comprising the subsequently performed steps of forming islands from a strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment and transferring the at least partially relaxed strained material islands to the target substrate.
摘要翻译：本发明涉及一种用于在目标基底上形成至少部分松弛的应变材料的方法，包括随后执行的步骤：从中间基底上的应变材料层形成岛，至少部分地通过第一热处理并将至少部分松弛的应变材料岛转移到目标衬底。

10. 发明申请

WO2004061943A1 RECYCLING BY MECHANICAL MEANS OF A WAFER COMPRISING A TAKING-OFF STRUCTURE AFTER TAKING-OFF A THIN LAYER THEREOF 审中-公开
标题翻译：通过机械手段回收包括取消结构在内的一个薄膜结构的机械手段
公开(公告)号：WO2004061943A1
公开(公告)日：2004-07-22
申请号：PCT/IB2004/000285
申请日：2004-01-07
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , GHYSELEN, Bruno , AULNETTE, Cécile , OSTERNAUD, Bénédicte , AKATSU, Takeshi , FAURE, Bruce
发明人： GHYSELEN, Bruno , AULNETTE, Cécile , OSTERNAUD, Bénédicte , AKATSU, Takeshi , FAURE, Bruce
IPC分类号： H01L21/762
CPC分类号： H01L21/02032 , H01L21/76254
摘要： Method of recycling a donor wafer (10) after having taken off a useful layer comprising a material chosen from semiconductor materials. The donor wafer (10) comprising successively a substrate (1) and a taking-off structure (I), the taking-off structure (I) before taking-off comprising the useful layer to take off; The method comprising removal of substance on the side where the taking-off took place, characterized in that the removal of substance comprises employing mechanical means so that, after removal of substance, at least a part of the taking-off structure (I’) remains, this at least part of the taking-off structure (I’) including at least one other useful layer that can be taken off after recycling, without a supplementary step of reforming a useful layer. The present document likewise relates to: -methods of taking-off a thin layer from a donor wafer (10) which may be recycled according to the invention; -donor wafer (10) which may be recycled according to the invention.
摘要翻译：在取下包含选自半导体材料的材料的有用层之后再循环供体晶片（10）的方法。施主晶片（10）连续地包括基板（1）和起飞结构（I），起飞结构（I）在起飞前包括有用层起飞; 所述方法包括在所述起飞的一侧移除物质，其特征在于，物质的去除包括采用机械装置，使得在除去物质之后，至少一部分起飞结构（I'）剩余物，该至少部分的起飞结构（I'）包括至少一个可再循环之后可以取出的其它有用层，而不需要改造有用层的辅助步骤。本文件同样涉及： - 可以从根据本发明再循环的供体晶片（10）中取出薄层的方法; （10），其可以根据本发明再循环。

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