专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2007046869A2 IN-PLANE MECHANICALLY COUPLED MICROELECTROMECHANICAL TUNING FORK RESONATORS 审中-公开
标题翻译：平面机械耦合微电子机械调谐器谐振器
公开(公告)号：WO2007046869A2
公开(公告)日：2007-04-26
申请号：PCT/US2006/019531
申请日：2006-05-19
申请人： ROBERT BOSCH GMBH , THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY , PAN, Zhiyu , CHANDLER, Rob, Norris , LUTZ, Markus , PARTRIDGE, Aaron , MATERNA, Volker , YAMA, Gary , FREY, Wilhelm
发明人： PAN, Zhiyu , CHANDLER, Rob, Norris , LUTZ, Markus , PARTRIDGE, Aaron , MATERNA, Volker , YAMA, Gary , FREY, Wilhelm
CPC分类号： H03H9/505 , H03H9/0023 , H03H9/02338 , H03H9/2468 , H03H2009/02496
摘要： There are many inventions described and illustrated herein, as well as many aspects and embodiments of those inventions. In one aspect, the present invention is directed to a resonator architecture including a plurality of in-plane vibration microelectromechanical resonators (for example, 2 or 4 resonators) that are mechanically coupled to provide, for example, a differential signal output. In one embodiment, the present invention includes four commonly shaped microelectromechanical tuning fork resonators (for example, tuning fork resonators having two or more rectangular-shaped or square-shaped tines). Each resonator is mechanically coupled to another resonator of the architecture. For example, each resonator of the architecture is mechanically coupled to another one of the resonators on one side or a corner of one of the sides. In this way, all of the resonators, when induced, vibrate at the same frequency.
摘要翻译：这里描述和示出了许多发明，以及这些发明的许多方面和实施例。在一个方面，本发明涉及一种包括机械耦合以提供例如差分信号输出的多个平面内振动微机电谐振器（例如，2或4个谐振器）的谐振器结构。在一个实施例中，本发明包括四个通常形状的微机电音叉谐振器（例如，具有两个或更多个矩形或正方形形状的叉的音叉谐振器）。每个谐振器机械耦合到该架构的另一谐振器。例如，该架构的每个谐振器在其中一个侧面的一侧或拐角上机械耦合到另一个谐振器。以这种方式，所有谐振器在被感应时以相同的频率振动。

2. 发明申请

WO2006115592A1 ANTI-STICTION TECHNIQUE FOR ELECTROMECHANICAL SYSTEMS AND ELECTROMECHANICAL DEVICE EMPLOYING SAME 审中-公开
标题翻译：机电系统的防伪技术及其使用的电化学装置
公开(公告)号：WO2006115592A1
公开(公告)日：2006-11-02
申请号：PCT/US2006/008600
申请日：2006-03-10
申请人： GMBH, Robert, Bosch , ULM, Markus , METZ, Matthias , STARK, Brian , YAMA, Gary , LUTZ, Markus , PARTRIDGE, Aaron , FREY, Wilhelm
发明人： ULM, Markus , METZ, Matthias , STARK, Brian , YAMA, Gary , LUTZ, Markus , PARTRIDGE, Aaron , FREY, Wilhelm
IPC分类号： B81C1/00
CPC分类号： B81C1/0096 , B81B3/0005 , B81C2201/112 , B82Y30/00 , H01L2224/13 , H01L2924/1461 , H01L2924/00
摘要： A mechanical structure is disposed in a chamber, at least a portion of which is defined by the encapsulation structure. A first method provides a channel cap having at least one preform portion disposed over or in at least a portion of an anti-stiction channel to seal the anti-stiction channel, at least in part. A second method provides a channel cap having at least one portion disposed over or in at least a portion of an anti-stiction channel to seal the anti-stiction channel, at least in part. The at least one portion is fabricated apart from the electromechanical device and thereafter affixed to the electromechanical device. A third method provides a channel cap having at least one portion disposed over or in at least a portion of the anti-stiction channel to seal an anti-stiction channel, at least in part. The at least one portion may comprise a wire ball, a stud, metal foil or a solder preform. A device includes a substrate, an encapsulation structure and a mechanical structure. An anti-stiction layer is disposed on at least a portion of the mechanical structure. An anti-stiction channel is formed in at least one of the substrate and the encapsulation structure. A cap has at least one preform portion disposed over or in at least a portion of the anti-stiction channel to seal the anti-stiction channel, at least in part.
摘要翻译：机械结构设置在室中，其至少一部分由封装结构限定。第一种方法提供了通道盖，其具有至少部分地设置在防静电通道的上方或至少一部分中的至少一个预成型件部分，以密封抗静电通道。第二种方法提供了通道盖，其具有至少部分地设置在防静电通道上方或至少一部分中的至少一个部分，以密封抗静电通道。该至少一个部分与机电装置分开制造，然后固定在机电装置上。第三种方法提供了通道盖，其具有至少部分地设置在防静电通道上方或至少一部分中的至少一个部分，以密封抗静脉通道。所述至少一个部分可以包括线球，螺柱，金属箔或焊料预制件。一种器件包括衬底，封装结构和机械结构。抗静电层设置在机械结构的至少一部分上。在基板和封装结构中的至少一个中形成抗静电通道。帽至少部分地具有设置在抗静电通道上方或至少一部分中的至少一个预制件部分，以密封抗静电通道。

3. 发明申请

WO2008067097A2 MICROELECTROMECHANICAL DEVICES AND FABRICATION METHODS 审中-公开
标题翻译：微电子机械装置和制造方法
公开(公告)号：WO2008067097A2
公开(公告)日：2008-06-05
申请号：PCT/US2007/082882
申请日：2007-10-29
申请人： ROBERT BOSCH GMBH , METZ, Matthias , PAN, Zhiyu , STARK, Brian , ULM, Markus , YAMA, Gary
发明人： METZ, Matthias , PAN, Zhiyu , STARK, Brian , ULM, Markus , YAMA, Gary
IPC分类号： B81C1/00
CPC分类号： B81C1/00301 , B81B2207/015 , B81B2207/097 , B81C2203/0136 , B81C2203/0145 , H01L21/56 , H01L2924/0002 , H01L2924/00
摘要： There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. An embodiment further includes location of a piezoelectric material as part of a semiconductor sensing structure. The semiconductor sensing structure, in conjunction with the piezoelectric material, can be used as a sensing device to provide an output signal associated with a sensed event.
摘要翻译：这里描述和说明了许多发明。在一个方面，本发明涉及MEMS器件以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在室中的机械结构。一个实施例还包括作为半导体感测结构的一部分的压电材料的位置。结合压电材料的半导体感测结构可以用作感测装置以提供与感测到的事件相关联的输出信号。

4. 发明申请

WO2008021534A1 DUAL-AXIS YAW RATE SENSING UNIT HAVING A TUNING FORK GYROSCOPE ARRANGEMENT 审中-公开
标题翻译：具有调音台陀螺仪布置的双轴感应传感器
公开(公告)号：WO2008021534A1
公开(公告)日：2008-02-21
申请号：PCT/US2007/018337
申请日：2007-08-16
申请人： ROBERT BOSCH GMBH , PAN, Zhiyu , LANG, Christoph , YAMA, Gary
发明人： PAN, Zhiyu , LANG, Christoph , YAMA, Gary
IPC分类号： G01P9/04 , H01L41/08
CPC分类号： G01C19/5607
摘要： A dual-axis tuning fork gyroscope includes four open-ended tuning forks arranged coplanarly in two opposite pairs, a first pair of open-ended tuning forks being arranged opposite one another along a first axis, a second pair of open-ended tuning forks being arranged opposite one another along a second axis, the first axis and the second axis being perpendicular to one another. The four open-ended tuning forks are mechanically coupled together so that all four tuning forks vibrate in the same manner in terms of frequency and phase.
摘要翻译：双轴音叉陀螺仪包括四个以两对相对共面布置的开放式调谐叉，第一对开放式调谐叉沿着第一轴线彼此相对布置，第二对开放式调音叉为沿着第二轴线彼此相对布置，第一轴线和第二轴线彼此垂直。四个开放式调谐叉机械耦合在一起，使得所有四个调谐叉在频率和相位方面以相同的方式振动。

5. 发明申请

WO2016094693A1 RESISTIVE SWITCHING FOR MEMS DEVICES 审中-公开
标题翻译： MEMS器件的电阻开关
公开(公告)号：WO2016094693A1
公开(公告)日：2016-06-16
申请号：PCT/US2015/065050
申请日：2015-12-10
申请人： ROBERT BOSCH GMBH , SAMARAO, Ashwin, K. , O'BRIEN, Gary , FEYH, Ando , PURKL, Fabian , YAMA, Gary
发明人： SAMARAO, Ashwin, K. , O'BRIEN, Gary , FEYH, Ando , PURKL, Fabian , YAMA, Gary
IPC分类号： G01J5/20 , H01L31/101
CPC分类号： G01J5/20 , G01J5/024 , G01J5/0853 , G01J2005/202 , H01L27/14669 , H01L27/2472 , H01L31/02019 , H01L31/0224 , H01L31/11 , H01L45/1616
摘要： A MEMS device includes a bolometer attached to a silicon wafer by a base portion of at least one anchor structure. The base portion comprises a layer stack having a metal- insulator-metal (MIM) configuration such that the base portion acts as a resistive switch such that, when the first DC voltage is applied to the patterned conductive layer, the base portion transitions from a high resistive state to a low resistive state, and, when the second DC voltage is applied to the patterned conductive layer, the base portion transitions from a high resistive state to a low resistive state.
摘要翻译： MEMS装置包括通过至少一个锚结构的基部附接到硅晶片的测辐射热计。基底部分包括具有金属 - 绝缘体 - 金属（MIM）构造的层堆叠，使得基底部分起电阻性开关的作用，使得当第一DC电压施加到图案化的导电层时，基底部分从高电阻状态变为低电阻状态，并且当将第二DC电压施加到图案化导电层时，基极部分从高电阻状态转变为低电阻状态。

6. 发明申请

WO2014150091A1 EPI-POLY ETCH STOP FOR OUT OF PLANE SPACER DEFINED ELECTRODE 审中-公开
标题翻译： EPI-POLY ETCH STOP FOR PLANE SPACER定义电极
公开(公告)号：WO2014150091A1
公开(公告)日：2014-09-25
申请号：PCT/US2014/022186
申请日：2014-03-08
申请人： ROBERT BOSCH GMBH , GRAHAM, Andrew , YAMA, Gary , O'BRIEN, Gary
发明人： GRAHAM, Andrew , YAMA, Gary , O'BRIEN, Gary
IPC分类号： H01L21/28
CPC分类号： B81B3/0021 , B81B2201/0271 , B81B2203/04 , B81B2203/053 , B81C1/00095 , B81C1/00166 , B81C2201/0132 , B81C2201/014 , B81C2201/0177 , B81C2203/0136
摘要： In one embodiment, a method of forming an out-of-plane electrode includes forming an oxide layer above an upper surface of a device layer, etching an etch stop perimeter defining trench extending through the oxide layer, forming a first cap layer portion on an upper surface of the oxide layer and within the etch stop perimeter defining trench, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the deposited first material portion, and vapor releasing a portion of the oxide layer with the etch stop portion providing a lateral etch stop.
摘要翻译：在一个实施例中，形成平面外电极的方法包括在器件层的上表面上形成氧化物层，蚀刻限定延伸穿过氧化物层的沟槽的蚀刻停止周界，在第一帽层部分上形成氧化物层的上表面，并且在蚀刻停止周界内限定沟槽，蚀刻延伸穿过第一盖层部分并停止在氧化物层处的第一电极周界，限定沟槽，在第一电极周界限定沟槽内沉积第一材料部分，沉积在沉积的第一材料部分上方的第二盖层部分，以及用蚀刻停止部分提供横向蚀刻停止物来释放一部分氧化物层的蒸气。

7. 发明申请

WO2014100611A1 METHOD OF MANUFACTURING A SENSOR DEVICE HAVING A POROUS THIN-FILM METAL ELECTRODE 审中-公开
标题翻译：制造具有多孔薄膜金属电极的传感器器件的方法
公开(公告)号：WO2014100611A1
公开(公告)日：2014-06-26
申请号：PCT/US2013/076976
申请日：2013-12-20
申请人： ROBERT BOSCH GMBH , FEYH, Ando , O'BRIEN, Gary , PURKL, Fabian , YAMA, Gary , SAMARAO, Ashwin
发明人： FEYH, Ando , O'BRIEN, Gary , PURKL, Fabian , YAMA, Gary , SAMARAO, Ashwin
IPC分类号： G01N27/414
CPC分类号： H01L21/28008 , G01N27/4146 , H01L29/4238
摘要： A method of fabricating a semiconductor sensor device includes providing a substrate, supporting a source region and a drain region with the substrate, forming an insulator layer above the source region and the drain region, and forming a porous metallic gate region above the insulator layer using plasma enhanced atomic layer deposition (PEALD).
摘要翻译：一种半导体传感器装置的制造方法，其特征在于，包括：在所述基板上设置支撑源极区域和漏极区域的基板，在所述源极区域和所述漏极区域的上方形成绝缘体层，在所述绝缘体层的上方形成多孔金属栅极区域，使用等离子体增强原子层沉积（PEALD）。

8. 发明申请

WO2014036250A2 SERPENTINE IR SENSOR 审中-公开
标题翻译： SERPENTINE红外传感器
公开(公告)号：WO2014036250A2
公开(公告)日：2014-03-06
申请号：PCT/US2013/057280
申请日：2013-08-29
申请人： ROBERT BOSCH GMBH , PURKLY, Fabian , YAMA, Gary , FEYH, Ando , O'BRIEN, Gary
发明人： PURKLY, Fabian , YAMA, Gary , FEYH, Ando , O'BRIEN, Gary
IPC分类号： G01J5/04 , G01J5/02 , G01J5/06 , G01J5/20 , G01J5/08
CPC分类号： H01L31/0232 , G01J5/0225 , G01J5/023 , G01J5/024 , G01J5/045 , G01J5/046 , G01J5/06 , G01J5/0809 , G01J5/0853 , G01J5/20 , H01L31/09
摘要： In one embodiment, a MEMS sensor includes a mirror and an absorber spaced apart from the mirror, the absorber including a plurality of spaced apart conductive legs defining a tortuous path across an area directly above the mirror.
摘要翻译：在一个实施例中，MEMS传感器包括反射镜和与反射镜隔开的吸收器，吸收器包括多个间隔开的导电腿，所述导电腿限定穿过反射镜正上方区域的曲折路径。 / p>

9. 发明申请

WO2010083158A1 METHOD OF FORMING A DEVICE WITH A PIEZORESISTOR AND ACCELEROMETER 审中-公开
标题翻译：用PIEZORESISTOR和加速度计形成装置的方法
公开(公告)号：WO2010083158A1
公开(公告)日：2010-07-22
申请号：PCT/US2010/020750
申请日：2010-01-12
申请人： ROBERT BOSCH GMBH , YAMA, Gary , PRUITT, Beth , BARLIAN, Arnoldus, Alvin
发明人： YAMA, Gary , PRUITT, Beth , BARLIAN, Arnoldus, Alvin
IPC分类号： G01P15/12 , G01C19/56 , H01L21/762 , H01L27/12
CPC分类号： G01C19/56 , G01P15/0802 , G01P15/123 , G01P2015/0817
摘要： A method of forming a device with a piezoresistor is disclosed herein. In one embodiment, the method includes providing a substrate, etching a trench in the substrate to form a vertical wall, growing a piezoresistor layer epitaxially on the vertical wall, and separating the vertical wall from an underlying layer of the substrate that extends along a horizontal plane such that the piezoresistor layer is movable with respect to the underlying layer within the horizontal plane.
摘要翻译：本文公开了一种用压电电阻器形成器件的方法。在一个实施例中，该方法包括提供衬底，蚀刻衬底中的沟槽以形成垂直壁，在垂直壁上外延生长压敏电阻层，以及将垂直壁与沿着水平延伸的衬底的下层分离使得压电电阻层相对于水平面内的下层是可移动的。

10. 发明申请

WO2007021396A2 MICROELECTROMECHANICAL DEVICES AND FABRICATION METHODS 审中-公开
标题翻译：微电子机械装置和制造方法
公开(公告)号：WO2007021396A2
公开(公告)日：2007-02-22
申请号：PCT/US2006/026531
申请日：2006-07-07
申请人： ROBERT BOSCH GMBH , YAMA, Gary
发明人： YAMA, Gary
IPC分类号： B81C5/00
CPC分类号： B81C1/00333
摘要： There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. An embodiment further includes a buried polysilicon layer and a "protective layer" deposited over the buried polysilicon layer to prevent possible erosion of, or damage to the buried polysilicon layer during processing steps. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.
摘要翻译：这里描述和说明了许多发明。在一个方面，本发明涉及MEMS器件以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在室中的机械结构。一个实施例还包括埋入式多晶硅层和“保护层” 沉积在掩埋的多晶硅层上方以防止在处理步骤期间可能侵蚀或损害掩埋的多晶硅层。当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖率，在进行后续处理时保持其完整性，不会显着和/或不利地影响机械结构的性能特性腔室中的机械结构（如果在沉积期间涂覆有材料），和/或促进与高性能集成电路的集成。在一个实施例中，封装机械结构的材料例如是硅（多晶硅，非晶硅或多孔硅，无论是掺杂的还是未掺杂的），碳化硅，硅 - 锗，锗或砷化镓。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式